Three-dimensional memory devices and methods for forming the same

ABSTRACT

In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes an array of memory cells and a first semiconductor layer in contact with sources of the array of NAND memory strings. The second semiconductor structure includes a second semiconductor layer, a first peripheral circuit of the array of memory cells including a first transistor in contact with a first side of the second semiconductor layer, and a second peripheral circuit of the array of NAND memory strings including a second transistor in contact with a second side of the second semiconductor layer opposite to the first side.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is continuation of International Application No.PCT/CN2021/103697, filed on Jun. 30, 2021, entitled “THREE-DIMENSIONALMEMORY DEVICES AND METHODS FOR FORMING THE SAME,” which is herebyincorporated by reference in its entirety. This application is alsorelated to co-pending U.S. application Ser. No. ______, AttorneyDocketing No.: 10018-01-0255-US, filed on even date, entitled“THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME,”co-pending U.S. application Ser. No. ______, Attorney Docketing No.:10018-01-0258-US, filed on even date, entitled “THREE-DIMENSIONAL MEMORYDEVICES AND METHODS FOR FORMING THE SAME,” co-pending U.S. applicationSer. No. ______, Attorney Docketing No.: 10018-01-0259-US, filed on evendate, entitled “THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMINGTHE SAME,” co-pending U.S. Application Ser. No. ______ AttorneyDocketing No.: 10018-01-0260-US, filed on even date, entitled“THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME,”co-pending U.S. application Ser. No. ______, Attorney Docketing No.:10018-01-0264-US, filed on even date, entitled “THREE-DIMENSIONAL MEMORYDEVICES AND METHODS FOR FORMING THE SAME,” co-pending U.S. applicationSer. No. ______, Attorney Docketing No.: 10018-01-0266-US, filed on evendate, entitled “THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMINGTHE SAME,” co-pending U.S. Application Ser. No. ______ AttorneyDocketing No.: 10018-01-0267-US, filed on even date, entitled“THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME,”co-pending U.S. application Ser. No. ______, Attorney Docketing No.:10018-01-0268-US, filed on even date, entitled “THREE-DIMENSIONAL MEMORYDEVICES AND METHODS FOR FORMING THE SAME,” all of which are herebyincorporated by reference in their entireties.

BACKGROUND

The present disclosure relates to memory devices and fabrication methodsthereof.

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit design, programming algorithm, and fabricationprocess. However, as feature sizes of the memory cells approach a lowerlimit, planar process and fabrication techniques become challenging andcostly. As a result, memory density for planar memory cells approachesan upper limit.

A three-dimensional (3D) memory architecture can address the densitylimitation in planar memory cells. The 3D memory architecture includes amemory array and peripheral circuits for facilitating operations of thememory array.

SUMMARY

In one aspect, a 3D memory device includes a first semiconductorstructure, a second semiconductor structure, and a bonding interfacebetween the first semiconductor structure and the second semiconductorstructure. The first semiconductor structure includes an array of memorycells and a first semiconductor layer in contact with sources of thearray of NAND memory strings. The second semiconductor structureincludes a second semiconductor layer, a first peripheral circuit of thearray of memory cells including a first transistor in contact with afirst side of the second semiconductor layer, and a second peripheralcircuit of the array of NAND memory strings including a secondtransistor in contact with a second side of the second semiconductorlayer opposite to the first side.

In another aspect, a system includes a memory device configured to storedata. The memory device includes a first semiconductor structure, asecond semiconductor structure, and a bonding interface between thefirst semiconductor structure and the second semiconductor structure.The first semiconductor structure includes an array of memory cells anda first semiconductor layer in contact with sources of the array of NANDmemory strings. The second semiconductor structure includes a secondsemiconductor layer, a first peripheral circuit of the array of memorycells including a first transistor in contact with a first side of thesecond semiconductor layer, and a second peripheral circuit of the arrayof NAND memory strings including a second transistor in contact with asecond side of the second semiconductor layer opposite to the firstside. The system also includes a memory controller coupled to the memorydevice and configured to control the array of memory cells through thefirst peripheral circuit and the second peripheral circuit.

In still another aspect, a method for forming a 3D memory device isdisclosed. An array of NAND memory strings is formed on a firstsubstrate. A first transistor is formed on a first side of a secondsubstrate. The first substrate and second substrate are bonded. A secondtransistor is formed on a second side of the second substrate oppositeto the first side.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate aspects of the present disclosure and,together with the description, further serve to explain the principlesof the present disclosure and to enable a person skilled in thepertinent art to make and use the present disclosure.

FIG. 1A illustrates a schematic view of a cross-section of a 3D memorydevice, according to some aspects of the present disclosure.

FIG. 1B illustrates a schematic view of a cross-section of another 3Dmemory device, according to some aspects of the present disclosure.

FIG. 1C illustrates a schematic view of a cross-section of still another3D memory device, according to some aspects of the present disclosure.

FIG. 1D illustrates a schematic view of a cross-section of yet another3D memory device, according to some aspects of the present disclosure.

FIG. 2 illustrates a schematic circuit diagram of a memory deviceincluding peripheral circuits, according to some aspects of the presentdisclosure.

FIG. 3 illustrates a block diagram of a memory device including a memorycell array and peripheral circuits, according to some aspects of thepresent disclosure.

FIG. 4A illustrates a block diagram of peripheral circuits provided withvarious voltages, according to some aspects of the present disclosure.

FIG. 4B illustrates a schematic diagram of peripheral circuits providedwith various voltages arranged in separate semiconductor structures,according to some aspects of the present disclosure.

FIGS. 5A and 5B illustrate a perspective view and a side view,respectively, of a planar transistor, according to some aspects of thepresent disclosure.

FIGS. 6A and 6B illustrate a perspective view and a side view,respectively, of a 3D transistor, according to some aspects of thepresent disclosure.

FIG. 7 illustrates a circuit diagram of a word line driver and a pagebuffer, according to some aspects of the present disclosure.

FIGS. 8A-8C illustrate side views of various NAND memory strings in 3Dmemory devices, according to various aspects of the present disclosure.

FIGS. 9A and 9B illustrate schematic views of cross-sections of 3Dmemory devices having three stacked semiconductor structures, accordingto various aspects of the present disclosure.

FIGS. 10A and 10B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 9A and 9B, according to various aspects of thepresent disclosure.

FIGS. 11A-11C illustrate side views of various examples of the 3D memorydevices in FIGS. 10A and 10B, according to various aspects of thepresent disclosure.

FIGS. 12A-12H illustrate a fabrication process for forming the 3D memorydevices in FIGS. 10A and 10B, according to some aspects of the presentdisclosure.

FIGS. 13A-13H illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 10A and 10B, according to some aspects of thepresent disclosure.

FIG. 14 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 10A and 10B, according to some aspects of the presentdisclosure.

FIG. 15 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 10A and 10B, according to some aspects of the presentdisclosure.

FIGS. 16A and 16B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 9A and 9B, according to various aspects of thepresent disclosure.

FIGS. 17A-17C illustrate side views of various examples of the 3D memorydevices in FIGS. 16A and 16B, according to various aspects of thepresent disclosure.

FIGS. 18A-18F illustrate a fabrication process for forming the 3D memorydevices in FIGS. 16A and 16B, according to some aspects of the presentdisclosure.

FIGS. 19A-19F illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 16A and 16B, according to some aspects of thepresent disclosure.

FIG. 20 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 16A and 16B, according to some aspects of the presentdisclosure.

FIG. 21 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 16A and 16B, according to some aspects of the presentdisclosure.

FIGS. 22A and 22B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 9A and 9B, according to various aspects of thepresent disclosure.

FIGS. 23A-23C illustrate side views of various examples of the 3D memorydevices in FIGS. 16A and 16B, according to various aspects of thepresent disclosure.

FIGS. 24A-24F illustrate a fabrication process for forming the 3D memorydevices in FIGS. 22A and 22B, according to some aspects of the presentdisclosure.

FIGS. 25A-25F illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 22A and 22B, according to some aspects of thepresent disclosure.

FIG. 26 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 22A and 22B, according to some aspects of the presentdisclosure.

FIG. 27 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 22A and 22B, according to some aspects of the presentdisclosure.

FIGS. 28A and 28B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 9A and 9B, according to various aspects of thepresent disclosure.

FIGS. 29A and 29B illustrate side views of various examples of the 3Dmemory devices in FIGS. 28A and 28B, according to various aspects of thepresent disclosure.

FIGS. 30A-30F illustrate a fabrication process for forming the 3D memorydevices in FIGS. 28A and 28B, according to some aspects of the presentdisclosure.

FIGS. 31A-31F illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 28A and 28B, according to some aspects of thepresent disclosure.

FIG. 32 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 28A and 28B, according to some aspects of the presentdisclosure.

FIG. 33 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 28A and 28B, according to some aspects of the presentdisclosure.

FIGS. 34A and 34B illustrate schematic views of cross-sections of 3Dmemory devices having three stacked semiconductor structures, accordingto various aspects of the present disclosure.

FIGS. 35A and 35B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 34A and 34B, according to some aspects of thepresent disclosure.

FIGS. 36A and 36B illustrate side views of various examples of the 3Dmemory devices in FIGS. 35A and 35B, according to various aspects of thepresent disclosure.

FIGS. 37A-37G illustrate a fabrication process for forming the 3D memorydevice in FIGS. 35A and 35B, according to some aspects of the presentdisclosure.

FIG. 38 illustrates a flowchart of a method for forming the 3D memorydevice in FIGS. 35A and 35B, according to some aspects of the presentdisclosure.

FIGS. 39A and 39B illustrate schematic views of cross-sections of 3Dmemory devices having two stacked semiconductor structures, according tovarious aspects of the present disclosure.

FIGS. 40A and 40B illustrate side views of various examples of the 3Dmemory devices in FIGS. 39A and 39B, according to various aspects of thepresent disclosure.

FIGS. 41A-41E illustrate a fabrication process for forming the 3D memorydevices in FIGS. 39A and 39B, according to some aspects of the presentdisclosure.

FIGS. 42A-421 illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 39A and 39B, according to some aspects of thepresent disclosure.

FIG. 43 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 39A and 39B, according to some aspects of the presentdisclosure.

FIGS. 44A and 44B illustrate schematic views of cross-sections of 3Dmemory devices having two stacked semiconductor structures, according tosome aspects of the present disclosure.

FIGS. 45A and 45B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 44A and 44B, according to some various of thepresent disclosure.

FIGS. 46A-46G illustrate a fabrication process for forming the 3D memorydevices in FIGS. 44A and 44B, according to some aspects of the presentdisclosure.

FIG. 47 illustrates a flowchart of a method for forming the 3D memorydevices in FIGS. 44A and 44B, according to some aspects of the presentdisclosure.

FIGS. 48A-48D illustrate a fabrication process of transfer bonding,according to some aspects of the present disclosure.

FIGS. 49A-49D illustrate another fabrication process of transferbonding, according to some aspects of the present disclosure.

FIG. 50 illustrates a block diagram of an exemplary system having amemory device, according to some aspects of the present disclosure.

FIG. 51A illustrates a diagram of an exemplary memory card having amemory device, according to some aspects of the present disclosure.

FIG. 51B illustrates a diagram of an exemplary solid-state drive (SSD)having a memory device, according to some aspects of the presentdisclosure.

The present disclosure will be described with reference to theaccompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only.As such, other configurations and arrangements can be used withoutdeparting from the scope of the present disclosure. Also, the presentdisclosure can also be employed in a variety of other applications.Functional and structural features as described in the presentdisclosures can be combined, adjusted, and modified with one another andin ways not specifically depicted in the drawings, such that thesecombinations, adjustments, and modifications are within the scope of thepresent disclosure.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures, or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations), and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layers thereupon,thereabove, and/or therebelow. A layer can include multiple layers. Forexample, an interconnect layer can include one or more conductors andcontact layers (in which interconnect lines and/or vertical interconnectaccess (via) contacts are formed) and one or more dielectric layers.

With the development of 3D memory devices, such as 3D NAND Flash memorydevices, the more stacked layers (e.g., more word lines and theresulting more memory cells) require more peripheral circuits (and thecomponents, e.g., transistors, forming the peripheral circuits) foroperating the 3D memory devices. For example, the number and/or size ofpage buffers needs to increase to match the increased number of memorycells. In another example, the number of string drivers in the word linedriver is proportional to the number of word lines in the 3D NAND Flashmemory. Thus, the continuous increase of the word lines also increasesthe area occupied by the word line driver, as well as the complexity ofmetal routings, sometimes even the number of metal layers. Moreover, insome 3D memory devices in which the memory cell array and peripheralcircuits are fabricated on different substrates and bonded together, thecontinuous increase of peripheral circuits' areas makes it thebottleneck for reducing the total chip size since the memory cell arraycan be scaled up vertically by increasing the number of levels insteadof increasing the planar size.

Thus, it is desirable to reduce the planar areas occupied by theperipheral circuits of the 3D memory devices with the increased numbersof peripheral circuits and the transistors thereof. However, scalingdown the transistor size of the peripheral circuits following theadvanced complementary metal-oxide-semiconductor (CMOS) technology nodetrend used for the logic devices would cause a significant cost increaseand higher leakage current, which are undesirable for memory devices.Moreover, because the 3D NAND Flash memory devices require a relativelyhigh voltage (e.g., above 5 V) in certain memory operations, such asprogram and erase, unlike logic devices, which can reduce its workingvoltage as the CMOS technology node advances, the voltage provided tothe memory peripheral circuits cannot be reduced. As a result, scalingdown the memory peripheral circuit sizes by following the trend foradvancing the CMOS technology nodes, like the normal logic devices,becomes infeasible.

To address one or more of the aforementioned issues, the presentdisclosure introduces various solutions in which the peripheral circuitsof a memory device are disposed in different planes (levels, tiers) inthe vertical direction, i.e., stacked over one another, to reduce theplanar chip size of the peripheral circuits, as well as the total chipsize of the memory device. In some implementations, the memory cellarray (e.g., NAND memory strings), the memory peripheral circuitsprovided with a relatively high voltage (e.g., above 5 V), and thememory peripheral circuits provided with a relatively low voltage (e.g.,below 1.3 V) are disposed in different planes in the vertical direction,i.e., stacked over one another, to further reduce the chip size. The 3Dmemory device architectures and fabrication processes disclosed in thepresent disclosure can be easily scaled up vertically to stack moreperipheral circuits in different planes to further reduce the chip size.

The peripheral circuits can be separated into different planes in thevertical direction based on different performance requirements, forexample, the voltages applied to the transistors thereof, which affectthe dimensions of the transistors (e.g., gate dielectric thickness),dimensions of the substrates in which the transistors are formed (e.g.,substrate thickness), and thermal budgets (e.g., the interconnectmaterial). Thus, peripheral circuits with different dimensionrequirements (e.g., gate dielectric thickness and substrate thickness)and thermal budgets can be fabricated in different processes to reducethe design and process constraints from each other, thereby improvingthe device performance and fabrication complexity.

According to some aspects of the present disclosure, the memory cellarray and various peripheral circuits with different performance anddimension requirements can be fabricated in parallel on differentsubstrates and then stacked over one another using various joiningtechnologies, such as hybrid bonding, transfer bonding, etc. As aresult, the fabrication cycle of the memory device can be furtherreduced. Moreover, since the thermal budgets of the different devicesbecome independent to each other, interconnect materials with desirableelectric performance but low thermal budget, such as copper, can be usedin interconnecting the memory cells and transistors of the peripheralcircuits, thereby further improving the device performance. Bondingtechnologies can introduce additional benefits as well. In someimplementations, hybrid bonding in a face-to-face manner achievesmillions of parallel short interconnects between the bondedsemiconductor structures to increase the throughput and input/output(I/O) speed of the memory devices. In some implementations, transferbonding re-uses a single wafer to transfer thin semiconductor layersthereof onto different memory devices for forming transistors thereon,which can reduce the cost of the memory devices.

The 3D memory device architectures and fabrication processes disclosedin the present disclosure have the flexibility to allow varioussubstrate materials suitable for different memory cell array designs,such as NAND memory strings suitable for gate-induced drain leakage(GIDL) erase operations or P-type bulk erase operations. In someimplementations, single crystalline silicon (a.k.a. single-crystalsilicon or monocrystalline silicon) with superior carrier electronicproperties—the lack of grain boundaries allows better charge carrierflow and prevents electron recombination—is used as the substratematerial of the NAND memory string array to achieve faster memoryoperations. In some implementations, polysilicon (a.k.a. polycrystallinesilicon) is used as the substrate material of the NAND memory stringarray for GIDL erase operations.

The 3D memory device architectures and fabrication processes disclosedin the present disclosure also have the flexibility to allow variousdevice pad-out schemes to meet different needs and different designs ofthe memory cell array. In some implementations, the pad-out interconnectlayer is formed from the side of the semiconductor structure that hasthe peripheral circuits to shorten the interconnect distance between thepad-out interconnect layer and the transistors of the peripheralcircuits to reduce the parasitic capacitance from the interconnects andimprove the electric performance. In some implementations, the pad-outinterconnect layer is formed on a thinned substrate in which the memorycell array is formed to enable inter-layer vias (LLVs, e.g.,submicron-level) for pad-out interconnects with high I/O throughput andlow fabrication complicity.

FIG. 1A illustrates a schematic view of a cross-section of a 3D memorydevice 100, according to some aspects of the present disclosure. 3Dmemory device 100 represents an example of a bonded chip. In someimplementations, at least some of the components of 3D memory device 100(e.g., memory cell array and peripheral circuits) are formed separatelyon different substrates in parallel and then jointed to form a bondedchip (a process referred to herein as a “parallel process”). In someimplementations, at least one semiconductor layer is attached ontoanother semiconductor structure using transferring bonding, then some ofthe components of 3D memory device 100 (e.g., memory cell array andperipheral circuits) are formed on the attached semiconductor layer (aprocess referred to herein as a “series process”). It is understood thatin some examples, the components of 3D memory device 100 (e.g., memorycell array and peripheral circuits) may be formed by a hybrid processthat combines the parallel process and the series process.

It is noted that x- and y-axes are added in FIG. 1A to furtherillustrate the spatial relationships of the components of asemiconductor device. A substrate of a semiconductor device, e.g., 3Dmemory device 100, includes two lateral surfaces (e.g., a top surfaceand a bottom surface) extending laterally in the x-direction (thelateral direction or width direction). As used herein, whether onecomponent (e.g., a layer or a device) is “on,” “above,” or “below”another component (e.g., a layer or a device) of a semiconductor deviceis determined relative to the substrate of the semiconductor device inthe y-direction (the vertical direction or thickness direction) when thesubstrate is positioned in the lowest plane of the semiconductor devicein they-direction. The same notion for describing the spatialrelationships is applied throughout the present disclosure.

3D memory device 100 can include a first semiconductor structure 102including an array of memory cells (also referred to herein as a “memorycell array”). In some implementations, the memory cell array includes anarray of NAND Flash memory cells. For ease of description, a NAND Flashmemory cell array may be used as an example for describing the memorycell array in the present disclosure. But it is understood that thememory cell array is not limited to NAND Flash memory cell array and mayinclude any other suitable types of memory cell arrays, such as NORFlash memory cell array, phase change memory (PCM) cell array, resistivememory cell array, magnetic memory cell array, spin transfer torque(STT) memory cell array, to name a few.

First semiconductor structure 102 can be a NAND Flash memory device inwhich memory cells are provided in the form of an array of 3D NANDmemory strings and/or an array of two-dimensional (2D) NAND memorycells. NAND memory cells can be organized into pages or fingers, whichare then organized into blocks in which each NAND memory cell is coupledto a separate line called a bit line (BL). All cells with the samevertical position in the NAND memory cell can be coupled through thecontrol gates by a word line (WL). In some implementations, a memoryplane contains a certain number of blocks that are coupled through thesame bit line. First semiconductor structure 102 can include one or morememory planes, and the peripheral circuits that are needed to performall the read/program (write)/erase operations can be included in asecond semiconductor structure 104 and a third semiconductor structure106.

In some implementations, the array of NAND memory cells is an array of2D NAND memory cells, each of which includes a floating-gate transistor.The array of 2D NAND memory cells includes a plurality of 2D NAND memorystrings, each of which includes a plurality of memory cells connected inseries (resembling a NAND gate) and two select transistors, according tosome implementations. Each 2D NAND memory string is arranged in the sameplane (i.e., referring to herein a flat, two-dimensional (2D) surface,different from the term “memory plane” in the present discourse) on thesubstrate, according to some implementations. In some implementations,the array of NAND memory cells is an array of 3D NAND memory strings,each of which extends vertically above the substrate (in 3D) through astack structure, e.g., a memory stack. Depending on the 3D NANDtechnology (e.g., the number of layers/tiers in the memory stack), a 3DNAND memory string typically includes a certain number of NAND memorycells, each of which includes a floating-gate transistor or acharge-trap transistor.

As shown in FIG. 1A, 3D memory device 100 can also include a secondsemiconductor structure 104 and a third semiconductor structure 106 eachincluding some of the peripheral circuits of the memory cell array infirst semiconductor structure 102. That is, the peripheral circuits ofthe memory cell array can be separated into at least two othersemiconductor structures (e.g., 104 and 106 in FIG. 1A). The peripheralcircuits (a.k.a. control and sensing circuits) can include any suitabledigital, analog, and/or mixed-signal circuits used for facilitating theoperations of the memory cell array. For example, the peripheralcircuits can include one or more of a page buffer, a decoder (e.g., arow decoder and a column decoder), a sense amplifier, a driver (e.g., aword line driver), an I/O circuit, a charge pump, a voltage source orgenerator, a current or voltage reference, any portions (e.g., asub-circuit) of the functional circuits mentioned above, or any activeor passive components of the circuit (e.g., transistors, diodes,resistors, or capacitors). The peripheral circuits in second and thirdsemiconductor structures 104 and 106 can use CMOS technology, e.g.,which can be implemented with logic processes in any suitable technologynodes.

As shown in FIG. 1A, first, second, and third semiconductor structures102, 104, and 106 are stacked over one another in different planes,according to some implementations. As a result, the memory cell array infirst semiconductor structure 102, the peripheral circuits in secondsemiconductor structure 104, and the peripheral circuits in thirdsemiconductor structure 106 can be stacked over one another in differentplanes to reduce the planar size of 3D memory device 100, compared withmemory devices in which all the peripheral circuits are disposed in thesame plane.

As shown in FIG. 1A, 3D memory device 100 further includes a firstbonding interface 103 vertically between first semiconductor structure102 and second semiconductor structure 104, as well as a second bondinginterface 105 vertically between second semiconductor structure 104 andthird semiconductor structure 106. First and second bonding interface103 or 105 can be an interface between two semiconductor structuresformed by any suitable bonding technologies as described below indetail, such as hybrid bonding, anodic bonding, fusion bonding, transferbonding, adhesive bonding, eutectic bonding, to name a few. In someimplementations as shown in FIG. 1A, second semiconductor structure 104is bonded to other two semiconductor structures 102 and 106 on oppositesides thereof. That is, second semiconductor structure 104 can bevertically between first and third semiconductor structures 102 and 106.

In some implementations, each of second and third semiconductorstructures 104 and 106 does not include any memory cell. In other words,each of second and third semiconductor structures 104 and 106 onlyincludes peripheral circuits, but not the memory cell array, accordingto some implementations. As a result, the memory cell array can be onlyincluded in first semiconductor structure 102, but not second or thirdsemiconductor structure 104 or 106. Further, the number of semiconductorstructures including peripheral circuits can be different from thenumber of semiconductor structures including memory cell array. In someimplementations, the number of semiconductor structures includingperipheral circuits is larger than the number of semiconductorstructures including memory cell array. For example, as shown in FIG.1A, the number of semiconductor structures including peripheral circuitsis 2 (i.e., 104 and 106), while the number of semiconductor structuresincluding memory cell array is 1 (i.e., 102).

It is understood that the relative positions of stacked first, second,and third semiconductor structures 102, 104, and 106 are not limited andmay vary in different examples. FIG. 1B illustrates a schematic view ofa cross-section of another exemplary 3D memory device 101, according tosome implementations. Different from 3D memory device 100 in FIG. 1A inwhich second semiconductor structure 104 including some of theperipheral circuits is vertically between first semiconductor structure102 including the memory cell array and third semiconductor structure106 including some of the peripheral circuits, in 3D memory device 101in FIG. 1B, first semiconductor structure 102 including the memory cellarray is between second and third semiconductor structures 104 and 106each including some of the peripheral circuits. Nevertheless, firstbonding interface 103 can still be formed vertically between first andsecond semiconductor structures 102 and 104 in 3D memory device 101.Instead of having a second bonding interface 105 vertically betweensecond and third semiconductor structures 104 and 106, 3D memory device100 can include a third bonding interface 107 vertically between firstand third semiconductor structures 102 and 106. Similar to first andsecond bonding interfaces 103 and 105, third bonding interface 107 canbe an interface between two semiconductor structures formed by anysuitable bonding technologies as described below in detail, such ashybrid bonding, anodic bonding, fusion bonding, transfer bonding,adhesive bonding, eutectic bonding, to name a few. In someimplementations as shown in FIG. 1B, first semiconductor structure 102is bonded to other two semiconductor structures 104 and 106 on oppositesides thereof.

As described below in detail, some or all of first, second, and thirdsemiconductor structures 102, 104, and 106 can be fabricated separately(and in parallel in some implementations) by the parallel process, suchthat the thermal budget of fabricating one of first, second, and thirdsemiconductor structures 102, 104, and 106 does not limit the processesof fabricating another one of first, second, and third semiconductorstructures 102, 104, and 106. Moreover, a large number of interconnects(e.g., bonding contacts and/or inter-layer vias (ILVs)/through substratevias (TSVs)) can be formed across bonding interfaces 103, 105, and 107to make direct, short-distance (e.g., micron- or submicron-level)electrical connections between adjacent semiconductor structures 102,104, and 106, as opposed to the long-distance (e.g., millimeter orcentimeter-level) chip-to-chip data bus on the circuit board, such asprinted circuit board (PCB), thereby eliminating chip interface delayand achieving high-speed I/O throughput with reduced power consumption.Data transfer among the memory cell array and the different peripheralcircuits in different semiconductor structures 102, 104, and 106 can beperformed through the interconnects (e.g., bonding contacts and/orILVs/TSVs) across bonding interfaces 103, 105, and 107. By verticallyintegrating first, second, and third semiconductor structures 102, 104,and 106, the chip size can be reduced, and the memory cell density canbe increased.

It is also understood that the number of bonding interfaces in a 3Dmemory device is not limited and may vary in different examples. FIG. 1Cillustrates a schematic view of a cross-section of still anotherexemplary 3D memory device 120, according to some implementations.Similar to 3D memory devices 100 and 101, the memory cell array and atleast two portions of the peripheral circuits can be stacked over oneanother in different planes in 3D memory device 120. However, differentfrom 3D memory devices 100 and 101 that include two bonding interfaces103 and 105 or 103 and 107, 3D memory device 120 includes a singlebonding interface 109 vertically between first semiconductor structure102 in which the memory array is disposed and a fourth semiconductorstructure 108 in which the two separate portions of the peripheralcircuits are disposed, according to some implementations. That is, thetwo vertically separated portions of the peripheral circuits are notseparated by bonding interface(s) as a result of a bonding process, butinstead, are disposed on opposite sides of a same semiconductor layer112 (e.g., a thinned silicon substrate) in fourth semiconductorstructure 108. Depending on the thickness of semiconductor layer 112,interconnects (e.g., ILVs in the submicron-level or TSVs in the micron-or tens micron-level) can be formed through semiconductor layer 112 tomake direct, short-distance (e.g., submicron- to tens micron-levels)electrical connections between the different portions of the peripheralcircuits on opposite sides of semiconductor layer 112 in fourthsemiconductor structure 108.

It is further understood that the types of devices disposed on oppositesides of semiconductor layer 112 are not limited and may vary indifferent examples. FIG. 1D illustrates a schematic view of across-section of yet another exemplary 3D memory device 121, accordingto some implementations. Similar to 3D memory devices 100, 101, and 120,the memory cell array and at least two portions of the peripheralcircuits can be stacked over one another in different planes in 3Dmemory device 121. Different from 3D memory device 120 in FIG. 1C inwhich both peripheral circuits are formed on opposite sides ofsemiconductor layer 112, in 3D memory device 121, the memory cell arrayand some of the peripheral circuits are formed on opposite sides ofsemiconductor layer 112 in a fifth semiconductor structure 110. That is,3D memory device 121 can include a single bonding interface 111vertically between second semiconductor structure 104 (or thirdsemiconductor structure 106) having some of the peripheral circuits andfifth semiconductor structure 110 in which the memory cell array andsome of the peripheral circuits are disposed, according to someimplementations. Similar to 3D memory device 120, depending on thethickness of semiconductor layer 112, interconnects (e.g., ILVs in thesubmicron-level or TSVs in the micron- or tens micron-level) can beformed through semiconductor layer 112 to make direct, short-distance(e.g., submicron- to tens micron-levels) electrical connections betweensome of the peripheral circuits and the memory cell array on oppositesides of semiconductor layer 112 in fifth semiconductor structure 110.It is understood that the numbers of stacked semiconductor structures in3D memory devices 100, 101, 120, and 121 are not limited by the examplesshown in FIGS. 1A-1D, and additional semiconductor structure(s) may befurther stacked above, below, or between semiconductor structures shownin FIGS. 1A-1D in the vertical direction.

FIG. 2 illustrates a schematic circuit diagram of a memory device 200including peripheral circuits, according to some aspects of the presentdisclosure. Memory device 200 can include a memory cell array 201 andperipheral circuits 202 coupled to memory cell array 201. 3D memorydevices 100, 101, 120, and 121 may be examples of memory device 200 inwhich memory cell array 201 and at least two portions of peripheralcircuits 202 may be included in various stacked semiconductor structures102, 104, 106, 108, and 110. Memory cell array 201 can be a NAND Flashmemory cell array in which memory cells 206 are provided in the form ofan array of NAND memory strings 208 each extending vertically above asubstrate (not shown). In some implementations, each NAND memory string208 includes a plurality of memory cells 206 coupled in series andstacked vertically. Each memory cell 206 can hold a continuous, analogvalue, such as an electrical voltage or charge, that depends on thenumber of electrons trapped within a region of memory cell 206. Eachmemory cell 206 can be either a floating gate type of memory cellincluding a floating-gate transistor or a charge trap type of memorycell including a charge-trap transistor.

In some implementations, each memory cell 206 is a single-level cell(SLC) that has two possible memory states and thus, can store one bit ofdata. For example, the first memory state “0” can correspond to a firstrange of voltages, and the second memory state “1” can correspond to asecond range of voltages. In some implementations, each memory cell 206is a multi-level cell (MLC) that is capable of storing more than asingle bit of data in more than four memory states. For example, the MLCcan store two bits per cell, three bits per cell (also known astriple-level cell (TLC)), or four bits per cell (also known as aquad-level cell (QLC)). Each MLC can be programmed to assume a range ofpossible nominal storage values. In one example, if each MLC stores twobits of data, then the MLC can be programmed to assume one of threepossible programming levels from an erased state by writing one of threepossible nominal storage values to the cell. A fourth nominal storagevalue can be used for the erased state.

As shown in FIG. 2 , each NAND memory string 208 can include a sourceselect gate (SSG) transistor 210 at its source end and a drain selectgate (DSG) transistor 212 at its drain end. SSG transistor 210 and DSGtransistor 212 can be configured to activate selected NAND memorystrings 208 (columns of the array) during read and program operations.In some implementations, SSG transistors 210 of NAND memory strings 208in the same block 204 are coupled through a same source line (SL) 214,e.g., a common SL, for example, to the ground. DSG transistor 212 ofeach NAND memory string 208 is coupled to a respective bit line 216 fromwhich data can be read or programmed via an output bus (not shown),according to some implementations. In some implementations, each NANDmemory string 208 is configured to be selected or deselected by applyinga select voltage (e.g., above the threshold voltage of DSG transistor212) or a deselect voltage (e.g., 0 V) to respective DSG transistor 212through one or more DSG lines 213 and/or by applying a select voltage(e.g., above the threshold voltage of SSG transistor 210) or a deselectvoltage (e.g., 0 V) to respective SSG transistor 210 through one or moreSSG lines 215.

As shown in FIG. 2 , NAND memory strings 208 can be organized intomultiple blocks 204, each of which can have a common source line 214. Insome implementations, each block 204 is the basic data unit for eraseoperations, i.e., all memory cells 206 on the same block 204 are erasedat the same time. Memory cells 206 of adjacent NAND memory strings 208can be coupled through word lines 218 that select which row of memorycells 206 is affected by read and program operations. In someimplementations, each word line 218 is coupled to a page 220 of memorycells 206, which is the basic data unit for program and read operations.The size of one page 220 in bits can correspond to the number of NANDmemory strings 208 coupled by word line 218 in one block 204. Each wordline 218 can include a plurality of control gates (gate electrodes) ateach memory cell 206 in respective page 220 and a gate line coupling thecontrol gates.

FIGS. 8A-8C illustrate side views of various NAND memory strings 208 in3D memory devices, according to various aspects of the presentdisclosure. As shown in FIG. 8A, NAND memory string 208 can extendvertically through a memory stack 804 above a substrate 802. Substrate802 can be a semiconductor layer including silicon (e.g., singlecrystalline silicon, c-silicon), silicon germanium (SiGe), galliumarsenide (GaAs), germanium (Ge), silicon on insulator (SOI), germaniumon insulator (GOI), or any other suitable semiconductor materials. Insome implementations, substrate 802 includes single crystalline silicon.

Memory stack 804 can include interleaved gate conductive layers 806 anddielectric layers 808. The number of the pairs of gate conductive layers806 and dielectric layers 808 in memory stack 804 can determine thenumber of memory cells 206 in memory cell array 201. Gate conductivelayer 806 can include conductive materials including, but not limitedto, tungsten (W), cobalt (Co), copper (Cu), aluminum (Al), polysilicon,doped silicon, silicides, or any combination thereof. In someimplementations, each gate conductive layer 806 includes a metal layer,such as a tungsten layer. In some implementations, each gate conductivelayer 806 includes a doped polysilicon layer. Each gate conductive layer806 can include control gates surrounding the memory cells, the gates ofDSG transistors 212, or the gates of SSG transistors 210, and can extendlaterally as DSG line 213 at the top of memory stack 804, SSG line 215at the bottom of memory stack 804, or word line 218 between DSG line 213and SSG line 215.

As shown in FIG. 8A, NAND memory string 208 includes a channel structure812A extending vertically through memory stack 804. In someimplementations, channel structure 812A includes a channel hole filledwith semiconductor material(s) (e.g., as a semiconductor channel 820)and dielectric material(s) (e.g., as a memory film 818). In someimplementations, semiconductor channel 820 includes silicon, such aspolysilicon. In some implementations, memory film 818 is a compositedielectric layer including a tunneling layer 826, a storage layer 824(also known as a “charge trap/storage layer”), and a blocking layer 822.Channel structure 812A can have a cylinder shape (e.g., a pillar shape).Semiconductor channel 820, tunneling layer 826, storage layer 824,blocking layer 822 are arranged radially from the center toward theouter surface of the pillar in this order, according to someimplementations. Tunneling layer 826 can include silicon oxide, siliconoxynitride, or any combination thereof. Storage layer 824 can includesilicon nitride, silicon oxynitride, silicon, or any combinationthereof. Blocking layer 822 can include silicon oxide, siliconoxynitride, high dielectric constant (high-k) dielectrics, or anycombination thereof. In one example, memory film 818 may include acomposite layer of silicon oxide/silicon oxynitride/silicon oxide (ONO).Channel structure 812A can further include a channel plug 816 on thedrain end of NAND memory string 208. Channel plug 816 can includepolysilicon and be in contact with semiconductor channel 820.

As shown in FIG. 8A, NAND memory string 208 can further include asemiconductor plug 814 on the source end thereof, which is in contactwith semiconductor channel 820 of channel structure 812A. Semiconductorplug 814, also known as selective epitaxial growth (SEG), can beselectively grown from substrate 802 and thus, has the same material assubstrate 802, such as single crystalline silicon. Channel structure812A in contact with semiconductor plug 814 on the source end of NANDmemory string 208 (e.g., at the bottom of NAND memory string 208 shownin FIG. 8A, a.k.a. a bottom plug) is referred to herein as a “bottomplug channel structure” 812A.

As shown in FIG. 8A, a slit structure 828A can extend vertically throughmemory stack 804 and be in contact with substrate 802. Slit structure828A can include a source contact 830 having conductive materials, suchas polysilicon, metals, metal compounds (e.g., titanium nitride (TiN),tantalum nitride (TaN), etc.), or silicides, as well as a well 832(e.g., a P-well and/or an N-well) in substrate 802. In someimplementations, source contact 830 and well 832 of slit structure 828A,part of substrate 802 between slit structure 828A and channel structure812A, and semiconductor plug 814 function as parts of source line 214coupled to the source of NAND memory string 208, for example, forapplying an erase voltage to the source of NAND memory string 208 duringerase operations.

Different from bottom plug channel structure 812A in FIG. 8A, as shownin FIG. 8B, NAND memory string 208 includes a sidewall plug channelstructure 812B and is free of semiconductor plug 814 on the source endthereof, according to some implementations. Instead, a sidewallsemiconductor layer 803 vertically between substrate 802 and memorystack 804 can be in contact with the sidewall of semiconductor channel820 of channel structures 812B. Sidewall semiconductor layer 803 caninclude semiconductor materials, such as polysilicon. Also differentfrom slit structure 828A in FIG. 8A, as shown in FIG. 8B, a slitstructure 828B does not include well 832, and source contact 830 of slitstructure 828B is in contact with sidewall semiconductor layer 803,according to some implementations. In some implementations, sourcecontact 830 of slit structure 828B and sidewall semiconductor layer 803collectively function as parts of source line 214 coupled to the sourceof NAND memory string 208, for example, for applying an erase voltage tothe source of NAND memory string 208 during erase operations.

As shown in FIG. 8C, in some implementations, substrate 802 (e.g.,having single crystalline silicon) is replaced with a semiconductorlayer 805 in contact with semiconductor channel 820 of a bottom openchannel structure 812C on the source end of NAND memory string 208.Parts of memory film 818 of channel structure 812C on the source end canbe removed to expose semiconductor channel 820 to contact semiconductorlayer 805. In some implementations, part of semiconductor channel 820 onthe source end of NAND memory string 208 is doped to form a doped region834 that is in contact with semiconductor layer 805. Semiconductor layer805 can include semiconductor materials, such as polysilicon. In someimplementations, semiconductor layer 805 includes N-type dopedpolysilicon to enable GILD erase operations. Also different from slitstructures 828A and 828B in FIGS. 8A and 8B, as shown in FIG. 8C, a slitstructure 828C does not include source contact 830 and thus, does notfunction as part of source line 214, according to some implementations.Instead, source contacts (not shown) may be formed on an opposite sideof semiconductor layer 805 with respect to channel structure 812C, suchthat the source contacts and parts of semiconductor layer 805 mayfunction as parts of source line 214 coupled to the source of NANDmemory string 208, for example, for applying an erase voltage to thesource of NAND memory string 208 during erase operations.

Referring to FIG. 2 , peripheral circuits 202 can be coupled to memorycell array 201 through bit lines 216, word lines 218, source lines 214,SSG lines 215, and DSG lines 213. As described above, peripheralcircuits 202 can include any suitable circuits for facilitating theoperations of memory cell array 201 by applying and sensing voltagesignals and/or current signals through bit lines 216 to and from eachtarget memory cell 206 through word lines 218, source lines 214, SSGlines 215, and DSG lines 213. Peripheral circuits 202 can includevarious types of peripheral circuits formed using CMOS technologies. Forexample, FIG. 3 illustrates some exemplary peripheral circuits 202including a page buffer 304, a column decoder/bit line driver 306, a rowdecoder/word line driver 308, a voltage generator 310, control logic312, registers 314, an interface (UF) 316, and a data bus 318. It isunderstood that in some examples, additional peripheral circuits 202 maybe included as well.

Page buffer 304 can be configured to buffer data read from or programmedto memory cell array 201 according to the control signals of controllogic 312. In one example, page buffer 304 may store one page of programdata (write data) to be programmed into one page 220 of memory cellarray 201. In another example, page buffer 304 also performs programverify operations to ensure that the data has been properly programmedinto memory cells 206 coupled to selected word lines 218.

Row decoder/word line driver 308 can be configured to be controlled bycontrol logic 312 and select block 204 of memory cell array 201 and aword line 218 of selected block 204. Row decoder/word line driver 308can be further configured to drive memory cell array 201. For example,row decoder/word line driver 308 may drive memory cells 206 coupled tothe selected word line 218 using a word line voltage generated fromvoltage generator 310.

Column decoder/bit line driver 306 can be configured to be controlled bycontrol logic 312 and select one or more 3D NAND memory strings 208 byapplying bit line voltages generated from voltage generator 310. Forexample, column decoder/bit line driver 306 may apply column signals forselecting a set of N bits of data from page buffer 304 to be outputtedin a read operation.

Control logic 312 can be coupled to each peripheral circuit 202 andconfigured to control operations of peripheral circuits 202. Registers314 can be coupled to control logic 312 and include status registers,command registers, and address registers for storing status information,command operation codes (OP codes), and command addresses forcontrolling the operations of each peripheral circuit 202.

Interface 316 can be coupled to control logic 312 and configured tointerface memory cell array 201 with a memory controller (not shown). Insome implementations, interface 316 acts as a control buffer to bufferand relay control commands received from the memory controller and/or ahost (not shown) to control logic 312 and status information receivedfrom control logic 312 to the memory controller and/or the host.Interface 316 can also be coupled to page buffer 304 and columndecoder/bit line driver 306 via data bus 318 and act as an I/O interfaceand a data buffer to buffer and relay the program data received from thememory controller and/or the host to page buffer 304 and the read datafrom page buffer 304 to the memory controller and/or the host. In someimplementations, interface 316 and data bus 318 are parts of an I/Ocircuit of peripheral circuits 202.

Voltage generator 310 can be configured to be controlled by controllogic 312 and generate the word line voltages (e.g., read voltage,program voltage, pass voltage, local voltage, and verification voltage)and the bit line voltages to be supplied to memory cell array 201. Insome implementations, voltage generator 310 is part of a voltage sourcethat provides voltages at various levels of different peripheralcircuits 202 as described below in detail. Consistent with the scope ofthe present disclosure, in some implementations, the voltages providedby voltage generator 310, for example, to row decoder/word line driver308, column decoder/bit line driver 306, and page buffer 304 are abovecertain levels that are sufficient to perform the memory operations. Forexample, the voltages provided to the page buffer circuits in pagebuffer 304 and/or the logic circuits in control logic 312 may be between1.3 V and 5 V, such as 3.3 V, and the voltages provided to the drivingcircuits in row decoder/word line driver 308 and/or column decoder/bitline driver 306 may be between 5 V and 30 V.

Different from logic devices (e.g., microprocessors), memory devices,such as 3D NAND Flash memory, require a wide range of voltages to besupplied to different memory peripheral circuits. For example, FIG. 4Aillustrates a block diagram of peripheral circuits provided with variousvoltages, according to some aspects of the present disclosure. In someimplementations, a memory device (e.g., memory device 200) includes alow low voltage (LLV) source 401, a low voltage (LV) source 403, and ahigh voltage (HV) source 405, each of which is configured to provide avoltage at a respective level (Vdd1, Vdd2, or Vdd3). For example,Vdd3>Vdd2>Vdd1. Each voltage source 401, 403, or 405 can receive avoltage input at a suitable level from an external power source (e.g., abattery). Each voltage source 401, 403, or 405 can also include voltageconverters and/or voltage regulators to convert the external voltageinput to the respective level (Vdd1, Vdd2, or Vdd3) and maintain andoutput the voltage at the respective level (Vdd1, Vdd2, or Vdd3) througha corresponding power rail. In some implementations, voltage generator310 of memory device 200 is part of voltage sources 401, 403, and 405.

In some implementations, LLV source 401 is configured to provide avoltage below 1.3 V, such as between 0.9 V and 1.2 V (e.g., 0.9 V, 0.95V, 1 V, 1.05 V, 1.1 V, 1.15 V, 1.2 V, any range bounded by the lower endby any of these values, or in any range defined by any two of thesevalues). In one example, the voltage is 1.2 V. In some implementations,LV source 403 is configured to provide a voltage between 1.3 V and 3.3 V(e.g., 1.3 V, 0.1.4 V, 1.5 V, 1.6 V, 1.7 V, 1.8 V, 1.9 V, 2 V, 2.1 V,2.2 V, 2.3 V, 2.4 V, 2.5 V, 2.6 V, 2.7 V, 2.8 V, 2.9 V, 3 V, 3.1 V, 3.2V, 3.3 V, any range bounded by the lower end by any of these values, orin any range defined by any two of these values). In one example, thevoltage is 3.3 V. In some implementations, HV source 405 is configuredto provide a voltage greater than 3.3 V, such as between 5 V and 30 V(e.g., 5 V, 6 V, 7 V, 8 V, 9 V, 10 V, 11 V, 12 V, 13 V, 14 V, 15 V, 16V, 17 V, 18 V, 19 V, 20 V, 21 V, 22 V, 23 V, 24 V, 25 V, 26 V, 27 V, 28V, 29 V, 30 V, any range bounded by the lower end by any of thesevalues, or in any range defined by any two of these values). It isunderstood that the voltage ranges described above with respect to HVsource 405, LV source 403, and LLV source 401 are for illustrativepurposes and non-limiting, and any other suitable voltage ranges may beprovided by HV source 405, LV source 403, and LLV source 401.

Based on their suitable voltage levels (Vdd1, Vdd 2, or Vdd3), thememory peripheral circuits (e.g., peripheral circuits 202) can becategories into LLV circuits 402, LV circuits 404, and HV circuits 406,which can be coupled to LLV source 401, LV source 403, and HV source405, respectively. In some implementations, HV circuits 406 includes oneor more driving circuits that are coupled to the memory cell array(e.g., memory cell array 201) through word lines, bit lines, SSG lines,DSG lines, source lines, etc., and configured to drive the memory cellarray by applying a voltage at a suitable level to the word lines, bitlines, SSG lines, DSG lines, source lines, etc., when performing memoryoperations (e.g., read, program, or erase). In one example, HV circuit406 may include word line driving circuits (e.g., in row decoder/wordline driver 308) that are coupled to word lines and apply a programvoltage (Vprog) or a pass voltage (Vpass) in the range of, for example,5 V and 30 V, to the word lines during program operations. In anotherexample, HV circuit 406 may include bit line driving circuits (e.g., incolumn decoder/bit line driver 306) that are coupled to bit lines andapply an erase voltage (Veras) in the range of, for example, 5 V and 30V, to bit lines during erase operations. In some implementations, LVcircuits 404 include page buffer circuits (e.g., in latches of pagebuffer 304) and are configured to buffer the data read from orprogrammed to the memory cell array. For example, the page buffer may beprovided with a voltage of, for example, 3.3 V, by LV source 403. LVcircuits 404 can also include logic circuits (e.g., in control logic312). In some implementations, LLV circuits 402 include an I/O circuit(e.g., in interface 316 and/or data bus 318) configured to interface thememory cell array with a memory controller. For example, the I/O circuitmay be provided with a voltage of, for example, 1.2 V, by LLV source401.

As described above, to reduce the total area occupied by the memoryperipheral circuits, peripheral circuits 202 can be separately formed indifferent planes based on different performance requirements, such asthe applied voltages. For example, FIG. 4B illustrates a schematicdiagram of peripheral circuits provided with various voltages arrangedin separate semiconductor structures, according to some aspects of thepresent disclosure. In some implementations, LLV circuits 402 and HVcircuits 406 are separated, for example, in semiconductor structures 408and 410, respectively, due to their significant difference in voltagesand the resulting difference in device dimensions, such as differentsemiconductor layer (e.g., substrate or thinned substrate) thicknessesand different gate dielectric thicknesses. In one example, the thicknessof the semiconductor layer (e.g., a substrate or a thinned substrate) inwhich HV circuits 406 are formed in semiconductor structure 410 may belarger than the thickness of the semiconductor layer (e.g., a substrateor a thinned substrate) in which LLV circuits 402 are formed insemiconductor structure 408. In another example, the thickness of thegate dielectric of transistors forming HV circuits 406 may be largerthan the thickness of the gate dielectric of transistors forming LLVcircuits 402. For example, the thickness difference may be at least5-fold. It is understood that stacked LLV circuits 402 and HV circuits406 in different planes may be formed in two semiconductor structure 408or 410 separated by bonding interface(s) (e.g., in FIGS. 1A and 1B) oron opposite sides of a semiconductor layer (e.g., in FIGS. 1C and 1D).

LV circuits 404 can be formed in either semiconductor structure 408 or410, or in another semiconductor, i.e., in the same plane as LLVcircuits 402 or HV circuits 406, or a different plane from LLV circuits402 and HV circuits 406. As shown in FIG. 4B, in some implementations,some of LV circuits 404 are formed in semiconductor structure 408, i.e.,in the same plane as LLV circuits 402, while some of LV circuits 404 areformed in semiconductor structure 410, i.e., in the same plane as HVcircuits 406. That is, LV circuits 404 can be separated into differentplanes as well. The thickness of the gate dielectric of transistorsforming LV circuits 404 in semiconductor structure 408 can be the sameas the thickness of the gate dielectric of transistors forming LVcircuits 404 in semiconductor structure 410, for example, when the samevoltage is applied to LV circuits 404 in different semiconductorstructures 408 and 410. In some implementations, the same voltage isapplied to both LV circuits 404 in semiconductor structure 408 and theLV circuits 404 in semiconductor structure 410, such that the voltageapplied to HV circuits 406 in semiconductor structure 410 is higher thanthe voltage applied to LV circuits 404 in semiconductor structure 408 or410, which is in turn higher than the voltage applied to LLV circuits402 in semiconductor structure 408. Moreover, since the voltage appliedto LV circuits 404 is between the voltages applied to HV circuits 406and LLV circuits 402, the thickness of the gate dielectric oftransistors forming LV circuits 404 is between the thickness of the gatedielectric of transistors forming HV circuits 406 and the thickness ofthe gate dielectric of transistors forming LLV circuits 402, accordingto some implementations. For example, the gate dielectric thickness oftransistors forming LV circuits 404 may be larger than the gatedielectric thickness of transistors forming LLV circuits 402, butsmaller than the gate dielectric thickness of transistors forming HVcircuits 406.

Based on the different performance requirements (e.g., associated withdifferent applied voltages), peripheral circuits 202 can be separatedinto at least two stacked semiconductor structures 408 and 410 indifferent planes. In some implementations, the I/O circuits in interface316 and/or data bus 318 (as LLV circuits 402) and logic circuits incontrol logic 312 (as part of LV circuits) are disposed in semiconductorstructure 408, while the page buffer circuits in page buffer 304 anddriving circuits in row decoder/word line driver 308 and columndecoder/bit line driver 306 are disposed in semiconductor structure 410.For example, FIG. 7 illustrates a circuit diagram of word line driver308 and page buffer 304, according to some aspects of the presentdisclosure.

In some implementations, page buffer 304 includes a plurality of pagebuffer circuits 702 each coupled to one NAND memory string 208 via arespective bit line 216. That is, memory device 200 can include bitlines 216 respectively coupled to NAND memory strings 208, and pagebuffer 304 can include page buffer circuits 702 respectively coupled tobit lines 216 and NAND memory strings 208. Each page buffer circuit 702can include one or more latches, switches, supplies, nodes (e.g., datanodes and I/O nodes), current mirrors, verify logic, sense circuits,etc. In some implementations, each page buffer circuit 702 is configuredto store sensing data corresponding to read data, which is received froma respective bit line 216, and output the stored sensing data to at thetime of the read operation; each page buffer circuit 702 is alsoconfigured to store program data and output the stored program data to arespective bit line 216 at the time of the program operation.

In some implementations, word line driver 308 includes a plurality ofstring drivers 704 (a.k.a. driving circuits) respectively coupled toword lines 218. Word line driver 308 can also include a plurality oflocal word lines 706 (LWLs) respectively coupled to string drivers 704.Each string driver 704 can include a gate coupled to a decoder (notshown), a source/drain coupled to a respective local word line 706, andanother source/drain coupled to a respective word line 218. In somememory operations, the decoder can select certain string drivers 704,for example, by applying a voltage signal greater than the thresholdvoltage of string drivers 704, and a voltage (e.g., program voltage,pass voltage, or erase voltage) to each local word line 706, such thatthe voltage is applied by each selected string driver 704 to arespective word line 218. In contrast, the decoder can also deselectcertain string drivers 704, for example, by applying a voltage signalsmaller than the threshold voltage of string drivers 704, such that eachdeselected string driver 704 floats a respective word line 218 duringthe memory operation.

In some implementations, page buffer circuits 702 include parts of LVcircuits 404 disposed in semiconductor structures 408 and/or 410. In oneexample, since the number of page buffer circuits 702 increases as thenumber of bit numbers increases, which may occupy a large area formemory devices with large numbers of memory cells, page buffer circuits702 may be split to semiconductor structures 408 and 410. In someimplementations, string drivers 704 include parts of HV circuits 406disposed in semiconductor structure 410.

Consistent with the scope of the present disclosure. each peripheralcircuit 202 can include a plurality of transistors as the basic buildingunits thereof. The transistors can be metal-oxide-semiconductorfield-effect-transistors (MOSFETs) in 2D (2D transistors, a.k.a. planartransistors) or 3D (3D transistors). For example, FIGS. 5A and 5Billustrate a perspective view and a side view, respectively, of a planartransistor 500, according to some aspects of the present disclosure, andFIGS. 6A and 6B illustrate a perspective view and a side view,respectively, of a 3D transistor 600, according to some aspects of thepresent disclosure. FIG. 5B illustrates the side view of thecross-section of planar transistor 500 in FIG. 5A in the BB plane, andFIG. 6B illustrates the side view of the cross-section of 3D transistor600 in FIG. 6A in the BB plane.

As shown in FIGS. 5A and 5B, planar transistor 500 can be a MOSFET on asubstrate 502, which can include silicon (e.g., single crystallinesilicon, c-Si), SiGe, GaA), Ge, SOI, or any other suitable materials.Trench isolations 503, such as shallow trench isolations (STI), can beformed in substrate 502 and between adjacent planar transistors 500 toreduce current leakage. Trench isolations 503 can include any suitabledielectric materials, such as silicon oxide, silicon nitride, siliconoxynitride, or high dielectric constant (high-k) dielectrics (e.g.,aluminum oxide, hafnium oxide, zirconium oxide, etc.). In someimplementations, high-k dielectric materials include any dielectricshaving a dielectric constant, or k-value, higher than that of siliconnitride (k>7). In some implementations, trench isolation 503 includessilicon oxide.

As shown in FIGS. 5A and 5B, planar transistor 500 can also include agate structure 508 on substrate 502. In some implementations, gatestructure 508 is on the top surface of substrate 502. As shown in FIG.5B, gate structure 508 can include a gate dielectric 507 on substrate502, i.e., above and in contact with the top surface of substrate 502.Gate structure 508 can also include a gate electrode 509 on gatedielectric 507, i.e., above and in contact with gate dielectric 507.Gate dielectric 507 can include any suitable dielectric materials, suchas silicon oxide, silicon nitride, silicon oxynitride, or high-kdielectrics. In some implementations, gate dielectric 507 includessilicon oxide, i.e., a gate oxide. Gate electrode 509 can include anysuitable conductive materials, such as polysilicon, metals (e.g., W, Cu,Al, etc.), metal compounds (e.g., TiN, TaN, etc.), or silicides. In someimplementations, gate electrode 509 includes doped polysilicon, i.e., agate poly.

As shown in FIG. 5A, planar transistor 500 can further include a pair ofa source and a drain 506 in substrate 502. Source and drain 506 can bedoped with any suitable P-type dopants, such as boron (B) or Gallium(Ga), or any suitable N-type dopants, such as phosphorus (P) or arsenic(As). Source and drain 506 can be separated by gate structure 508 in theplan view. In other words, gate structure 508 is formed between sourceand drain 506 in the plan view, according to some implementations. Thechannel of planar transistor 500 in substrate 502 can be formedlaterally between source and drain 506 under gate structure 508 when agate voltage applied to gate electrode 509 of gate structure 508 isabove the threshold voltage of planar transistor 500. As shown in FIGS.5A and 5B, gate structure 508 can be above and in contact with the topsurface of the part of substrate 502 in which the channel can be formed(the active region). That is, gate structure 508 is in contact with onlyone side of the active region, i.e., in the plane of the top surface ofsubstrate 502, according to some implementations. It is understood,although not shown in FIGS. 5A and 5B, planar transistor 500 may includeadditional components, such as wells and spacers.

As shown in FIGS. 6A and 6B, 3D transistor 600 can be a MOSFET on asubstrate 602, which can include silicon (e.g., single crystallinesilicon, c-Si), SiGe, GaAs, Ge, silicon on insulator SOI, or any othersuitable materials. In some implementations, substrate 602 includessingle crystalline silicon. Trench isolations 603, such as STI, can beformed in substrate 602 and between adjacent 3D transistors 600 toreduce current leakage. Trench isolations 603 can include any suitabledielectric materials, such as silicon oxide, silicon nitride, siliconoxynitride, or high-k dielectrics (e.g., aluminum oxide, hafnium oxide,zirconium oxide, etc.). In some implementations, trench isolation 603includes silicon oxide.

As shown in FIGS. 6A and 6B, different from planar transistor 500, 3Dtransistor 600 can further include a 3D semiconductor body 604 abovesubstrate 602. That is, in some implementations, 3D semiconductor body604 at least partially extends above the top surface of substrate 602 toexpose not only the top surface, but also the two side surfaces, of 3Dsemiconductor body 604. As shown in FIGS. 6A and 6B, for example, 3Dsemiconductor body 604 may be in a 3D structure, which is also known asa “fin,” to expose three sides thereof. 3D semiconductor body 604 isformed from substrate 602 and thus, has the same semiconductor materialas substrate 602, according to some implementations. In someimplementations, 3D semiconductor body 604 includes single crystallinesilicon. Since the channels can be formed in 3D semiconductor body 604,as opposed to substrate 602, 3D semiconductor body 604 may be viewed asthe active region for 3D transistor 600.

As shown in FIGS. 6A and 6B, 3D transistor 600 can also include a gatestructure 608 on substrate 602. Different from planar transistors 500 inwhich gate structure 508 is in contact with only one side of the activeregion, i.e., in the plane of the top surface of substrate 502, gatestructure 608 of 3D transistor 600 can be in contact with a plurality ofsides of the active region, i.e., in multiple planes of the top surfaceand side surfaces of the 3D semiconductor body 604. In other words, theactive region of 3D transistor 600, i.e., 3D semiconductor body 604, canbe at least partially surrounded by gate structure 608.

Gate structure 608 can include a gate dielectric 607 over 3Dsemiconductor body 604, e.g., in contact with the top surface and twoside surfaces of 3D semiconductor body 604. Gate structure 608 can alsoinclude a gate electrode 609 over and in contact with gate dielectric607. Gate dielectric 607 can include any suitable dielectric materials,such as silicon oxide, silicon nitride, silicon oxynitride, or high-kdielectrics. In some implementations, gate dielectric 607 includessilicon oxide, i.e., a gate oxide. Gate electrode 609 can include anysuitable conductive materials, such as polysilicon, metals (e.g., W, Cu,Al, etc.), metal compounds (e.g., TiN, TaN, etc.), or silicides. In someimplementations, gate electrode 609 includes doped polysilicon, i.e., agate poly.

As shown in FIG. 6A, 3D transistor 600 can further include a pair of asource and a drain 606 in 3D semiconductor body 604. Source and drain606 can be doped with any suitable P-type dopants, such as B or Ga, orany suitable N-type dopants, such as P or Ar. Source and drain 606 canbe separated by gate structure 608 in the plan view. In other words,gate structure 608 is formed between source and drain 606 in the planview, according to some implementations. As a result, multiple channelsof 3D transistor 600 in 3D semiconductor body 604 can be formedlaterally between source and drain 606 surrounded by gate structure 608when a gate voltage applied to gate electrode 609 of gate structure 608is above the threshold voltage of 3D transistor 600. Different fromplanar transistor 500 in which only a single channel can be formed onthe top surface of substrate 502, multiple channels can be formed on thetop surface and side surfaces of 3D semiconductor body 604 in 3Dtransistor 600. In some implementations, 3D transistor 600 includes amulti-gate transistor. It is understood, although not shown in FIGS. 6A,and 6B, 3D transistor 600 may include additional components, such aswells, spacers, and stressors (a.k.a. strain elements) at source anddrain 606.

It is further understood that FIGS. 6A and 6B illustrate one example of3D transistors that can be used in memory peripheral circuits, and anyother suitable 3D multi-gate transistors may be used in memoryperipheral circuits as well, including, for example, a gate all around(GAA) silicon on nothing (SON) transistor, a multiple independent gateFET (MIGET), a trigate FET, a H-gate FET, and a Ω-FET, a quadruple gateFET, a cylindrical FET, or a multi-bridge/stacked nanowire FET.

Regardless of planar transistor 500 or 3D transistor 600, eachtransistor a memory peripheral circuit can include a gate dielectric(e.g., gate dielectrics 507 and 607) having a thickness T (gatedielectric thickness, e.g., shown in FIGS. 5B and 6B). The gatedielectric thickness T of a transistor can be designed to accommodatethe voltage applied to the transistor. For example, referring to FIGS.4A and 4B, the gate dielectric thickness of transistors in HV circuits406 (e.g., driving circuits such as string drivers 704) may be largerthan the gate dielectric thickness of transistors in LV circuits 404(e.g., page buffer circuits 702 or logic circuits in control logic 312),which may be in turn larger than the gate dielectric thickness oftransistors in LLV circuits 402 (e.g., I/O circuits in interface 316 anddata bus 318). In some implementations, the difference between the gatedielectric thickness of transistors in HV circuits 406 and thedielectric thickness of transistors in LLV circuits 402 is at least5-fold, such as between 5-fold and 50-fold. For example, the gatedielectric thickness of transistors in HV circuits 406 may be at least 5times larger than the gate dielectric thickness of transistors in LLVcircuits 402.

In some implementations, the dielectric thickness of transistors in LLVcircuits 402 is between 2 nm and 4 nm (e.g., 2 nm, 2.1 nm, 2.2 nm, 2.3nm, 2.4 nm, 2.5 nm, 2.6 nm, 2.7 nm, 2.8 nm, 2.9 nm, 3 nm, 3.1 nm, 3.2nm, 3.3 nm, 3.4 nm, 3.5 nm, 3.6 nm, 3.7 nm, 3.8 nm, 3.9 nm, 4 nm, anyrange bounded by the lower end by any of these values, or in any rangedefined by any two of these values). It is understood that the thicknessmay be commensurate with the LLV voltage range applied to LLV circuits402, as described above in detail, such as below 1.3 V (e.g., 1.2 V). Insome implementations, the dielectric thickness of transistors in LVcircuits 404 is between 4 nm and 10 nm (e.g., 4 nm, 4.5 nm, 5 nm, 5.5nm, 6 nm, 6.5 nm, 7 nm, 7.5 nm, 8 nm, 8.5 nm, 9 nm. 9.5 nm, 10 nm, anyrange bounded by the lower end by any of these values, or in any rangedefined by any two of these values). It is understood that the thicknessmay be commensurate with the LV voltage range applied to LV circuits404, as described above in detail, such as between 1.3 V and 3.3 V(e.g., 3.3 V). In some implementations, the dielectric thickness oftransistors in HV circuits 406 is between 20 nm and 100 nm (e.g., 20 nm,21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 31nm, 32 nm, 33 nm, 34 nm, 35 nm, 36 nm, 37 nm, 38 nm, 39 nm, 40 nm, 45nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95nm, 100 nm, any range bounded by the lower end by any of these values,or in any range defined by any two of these values). It is understoodthat the thickness may be commensurate with the HV voltage range appliedto HV circuits 406, as described above in detail, such as greater than3.3 V (e.g., between 5 V and 30 V).

FIGS. 9A and 9B illustrate schematic views of cross-sections of 3Dmemory devices 900 and 901 having three stacked semiconductorstructures, according to various aspects of the present disclosure. 3Dmemory devices 900 and 901 may be examples of 3D memory device 100 inFIG. 1A in which second semiconductor structure 104 including some ofthe peripheral circuits is disposed vertically between firstsemiconductor structure 102 including the memory cell array and thirdsemiconductor structure 106 including some of the peripheral circuits.In other words, as shown in FIGS. 9A and 9B, first semiconductorstructure 102 including the memory cell array of 3D memory devices 900and 901 is disposed on one side of 3D memory devices 900 and 901, thirdsemiconductor structure 106 including some of the peripheral circuits isdisposed on another side of 3D memory devices 900 and 901, and secondsemiconductor structure 104 including some of the peripheral circuits isdisposed in the intermediate of 3D memory devices 900 and 901 (i.e.,between 3D memory devices 900 and 901) in the vertical direction,according to some implementations. Second and third semiconductorstructures 104 and 106 each including peripheral circuits can beimmediately adjacent to one another in three stacked semiconductorstructures 102, 104, and 106.

The above-mentioned arrangement of first, second, and thirdsemiconductor structures 102, 104, and 106, where first semiconductorstructure 102 is on one side of 3D memory devices 900 and 901, aredescribed below in detail with respect to various examples, such as inFIGS. 10A, 10B, 16A, 16B, 22A, 22B, 28A, and 28B. The above-mentionedarrangement of first, second, and third semiconductor structures 102,104, and 106 can simplify the fabrication process by using the substrateof first semiconductor structure 102 on which the memory cell array isformed as the base substrate to provide the support for processes, suchas thinning, bonding, contact formation, etc. applied to secondsemiconductor structure 104 and/or third semiconductor structure 106without the need of introducing another handle substrate (carrierwafer). Moreover, the electrical connections between the memory cellarray and the peripheral circuits in each of second and thirdsemiconductor structures 104 and 106 can be formed without penetratingthe substrate of first semiconductor structure 102 on which the memorycell array is formed, thereby reducing the wiring length and complexity.Furthermore, in some implementations, by arranging the firstsemiconductor structure 102 having the memory cell array on one side of3D memory devices 900 and 901, the substrate (e.g., a silicon substratehaving single crystalline silicon) of first semiconductor structure 102on which the memory cell array is formed is able to be relatively easilyreplaced with a semiconductor layer having a different material (e.g., apolysilicon layer), which is suitable for certain channel structures(e.g., bottom open channel structure 812C) of “charge trap” type of NANDmemory strings or “floating gate” type of NAND memory strings.

Moreover, as shown in FIGS. 9A and 9B, 3D memory device 900 or 901 canfurther include a pad-out interconnect layer 902 for pad-out purposes,i.e., interconnecting with external devices using contact pads on whichbonding wires can be soldered. In one example shown in FIG. 9A, thirdsemiconductor structure 106 including some of the peripheral circuits onone side of 3D memory device 900 may include the pad-out interconnectlayer 902, such that 3D memory device 900 may be pad-out from theperipheral circuit side to reduce the interconnect distance betweencontact pads and the peripheral circuits, thereby decreasing theparasitic capacitance from the interconnects and improving theelectrical performance of 3D memory device 900. In another example shownin FIG. 9B, first semiconductor structure 102 including the memory cellarray on another side of 3D memory device 901 may include pad-outinterconnect layer 902, such that 3D memory device 901 may be pad-outfrom the memory cell array side.

FIGS. 10A and 10B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 9A and 9B, according to various aspects of thepresent disclosure. 3D memory devices 1000 and 1001 may be examples of3D memory devices 900 and 901 in FIGS. 9A and 9B. As shown in FIG. 10A,3D memory device 1000 can include stacked first, second, and thirdsemiconductor structures 102, 104, and 106. In some implementations,first semiconductor structure 102 on one side of 3D memory device 1000includes a semiconductor layer 1002, a bonding layer 1008, and a memorycell array vertically between semiconductor layer 1002 and bonding layer1008. The memory cell array can include an array of NAND memory strings(e.g., NAND memory strings 208 disclosed herein), and the sources of thearray of NAND memory strings can be in contact with semiconductor layer1002 (e.g., as shown in FIGS. 8A-8C). Semiconductor layer 1002 caninclude semiconductor materials, such as single crystalline silicon(e.g., a silicon substrate or a thinned silicon substrate) orpolysilicon (e.g., a deposited layer), for example, depending on thetypes of channel structures of the NAND memory strings (e.g., bottomplug channel structure 812A, sidewall plug channel structure 812B, orbottom open channel structure 812C). Bonding layer 1008 can includeconductive bonding contacts (not shown) and dielectrics electricallyisolating the bonding contacts, which can be used, for example, forhybrid bonding as described below in detail.

In some implementations, second semiconductor structure 104 in theintermediate of 3D memory device 1000 (i.e., between first and thirdsemiconductor structures 102 and 106) includes a semiconductor layer1004, a bonding layer 1010, and some of the peripheral circuits of thememory cell array that are vertically between semiconductor layer 1004and bonding layer 1010. The transistors (e.g., planar transistors 500and 3D transistors 600) of the peripheral circuits can be in contactwith semiconductor layer 1004. Semiconductor layer 1004 can includesemiconductor materials, such as single crystalline silicon (e.g., alayer transferred from a silicon substrate or an SOI substrate). It isunderstood that in some examples, different from semiconductor layer1002 in first semiconductor structure 102, semiconductor layer 1004 onwhich the transistors are formed may include single crystalline silicon,but not polysilicon, due to the superior carrier mobility of singlecrystalline silicon that is desirable for transistors' performance.Similar to bonding layer 1008 in first semiconductor structure 102,bonding layer 1010 can also include conductive bonding contacts (notshown) and dielectrics electrically isolating the bonding contacts.Bonding interface 103 is vertically between and in contact with bondinglayers 1008 and 1010, respectively, according to some implementations.That is, bonding layers 1008 and 1010 can be disposed on opposite sidesof bonding interface 103, and the bonding contacts of bonding layer 1008can be in contact with the bonding contacts of bonding layer 1010 atbonding interface 103. As a result, a large number (e.g., millions) ofbonding contacts across bonding interface 103 can make direct,short-distance (e.g., micron-level) electrical connections betweenadjacent semiconductor structures 102 and 104.

In some implementations, third semiconductor structure 106 on anotherside of 3D memory device 1000 includes a semiconductor layer 1006 andsome of the peripheral circuits of the memory cell array that arevertically between semiconductor layer 1006 and semiconductor layer1006. The transistors (e.g., planar transistors 500 and/or 3Dtransistors 600) of the peripheral circuits can be in contact withsemiconductor layer 1006. Semiconductor layer 1006 can includesemiconductor materials, such as single crystalline silicon (e.g., asilicon substrate or a thinned silicon substrate). It is understood thatin some examples, different from semiconductor layer 1002 in firstsemiconductor structure 102, semiconductor layer 1006 on which thetransistors are formed may include single crystalline silicon, but notpolysilicon, due to the superior carrier mobility of single crystallinesilicon that is desirable for transistors' performance. It is understoodthat different from bonding interface 103 between first and secondsemiconductor structures 102 and 104, which is between bonding layers1008 and 1010 and results from hybrid bonding, bonding interface 105between second and third semiconductor structures 104 and 106 may resultfrom transfer bonding, as described below in detail, and thus, may notbe formed between two bonding layers. That is, third semiconductorstructure 106 of 3D memory device 1000 in FIG. 10A does not include abonding layer with bonding contacts, according to some implementations.As a result, instead of bonding contacts, through contacts (e.g.,ILVs/TSVs) across bonding interface 105 and through semiconductor layer1004 vertically between second and third semiconductor structures 104and 106 can make direct, short-distance (e.g., submicron-level)electrical connections between adjacent semiconductor structures 104 and106.

It is understood that in some examples, second and third semiconductorstructures 104 and 106 may also include bonding layers 1012 and 1014,respectively, disposed on opposite sides of bonding interface 105, asshown in FIG. 10B. In FIG. 10B, second semiconductor structure 104 of a3D memory device 1001 can include two bonding layers 1010 and 1012 ontwo sides thereof, and bonding layer 1012 can be disposed verticallybetween semiconductor layer 1004 and bonding interface 105. Thirdsemiconductor structure 106 of 3D memory device 1001 can include bondinglayer 1014 disposed vertically between bonding interface 105 and theperipheral circuits thereof. Each bonding layer 1012 and 1014 caninclude conductive bonding contacts (not shown) and dielectricselectrically isolating the bonding contacts. The bonding contacts ofbonding layer 1012 can be in contact with the bonding contacts ofbonding layer 1014 at bonding interface 105. As a result, bondingcontacts across bonding interface 105 in conjunction with throughcontacts (e.g., ILVs/TSVs) through semiconductor layer 1004 can makedirect, short-distance (e.g., micron-level) electrical connectionsbetween adjacent semiconductor structures 104 and 106.

As shown in FIGS. 10A and 10B, since third and second semiconductorstructures 106 and 104 are bonded in a face-to-back manner (e.g., eachsemiconductor layer 1006 or 1004 being disposed on the top side ofrespective third or second semiconductor structure 106 or 104 in FIGS.10A and 10B), the transistors in third and second semiconductorstructures 106 and 104 are disposed toward the same direction (e.g., thenegative y-direction in FIG. 10A), according to some implementations. Insome implementations, the transistors of the peripheral circuits inthird semiconductor structure 106 are disposed vertically betweenbonding interface 105 and semiconductor layer 1006, and the transistorsof the peripheral circuits in second semiconductor structure 104 aredisposed vertically between bonding interface 103 and semiconductorlayer 1004. Moreover, since first and second semiconductor structures102 and 104 are bonded in a face-to-face manner (e.g., semiconductorlayer 1002 being disposed on the bottom side of first semiconductorstructure 102, while semiconductor layer 1004 being disposed on the topside of second semiconductor structure 104 in FIGS. 10A and 10B), thetransistors of peripheral circuits in third and second semiconductorstructures 106 and 104 are disposed toward the same direction, facingthe memory cell array in first semiconductor structure 102, according tosome implementations. It is understood that pad-out interconnect layer902 in FIG. 9A or 9B is omitted from 3D memory devices 1000 and 1001 inFIGS. 10A and 10B for ease of illustration and may be included in 3Dmemory devices 1000 and 1001 as described above with respect to FIGS. 9Aand 9B.

As described above, second and third semiconductor structures 104 and106 can have peripheral circuits having transistors with differentapplied voltages. For example, second semiconductor structure 104 may beone example of semiconductor structure 408 including LLV circuits 402(and LV circuits 404 in some examples) in FIG. 4B, and thirdsemiconductor structure 106 may be one example of semiconductorstructure 410 including HV circuits 406 (and LV circuits 404 in someexamples) in FIG. 4B, or vice versa. Thus, in some implementations,semiconductor layers 1006 and 1004 in third and second semiconductorstructures 106 and 104 have different thicknesses to accommodate thetransistors with different applied voltages. In one example, thirdsemiconductor structure 106 may include HV circuits 406 and secondsemiconductor structure 104 may include LLV circuits 402, and thethickness of semiconductor layer 1006 in third semiconductor structure106 may be larger than the thickness of semiconductor layer 1004 insecond semiconductor structure 104. Moreover, in some implementations,the gate dielectrics of the transistors in third and secondsemiconductor structures 106 and 104 have different thicknesses as wellto accommodate the different applied voltages. In one example, thirdsemiconductor structure 106 may include HV circuits 406 and secondsemiconductor structure 104 may include LLV circuits 402, and thethickness of the gate dielectrics of the transistors in thirdsemiconductor structure 106 may be larger (e.g., at least 5-fold) thanthe thickness of the gate dielectrics of the transistors in secondsemiconductor structure 104. The thicker gate dielectric can sustain ahigher working voltage applied to the transistors in third semiconductorstructure 106 than the transistors in second semiconductor structure 104to avoid break down during high voltage operations.

As shown in FIGS. 10A and 10B, the peripheral circuits in secondsemiconductor structure 104 and/or the peripheral circuits in thirdsemiconductor structures 106 can be disposed between bonding interface103 and semiconductor layer 1006 of third semiconductor structure 106.The peripheral circuits in second semiconductor structure 104 and/or theperipheral circuits in third semiconductor structures 106 can also bedisposed between the memory cell array in first semiconductor structure102 and semiconductor layer 1006 of third semiconductor structure 106.

FIGS. 11A-11C illustrate side views of various examples of 3D memorydevices 1000 and 1001 in FIGS. 10A and 10B, according to various aspectsof the present disclosure. As shown in FIG. 11A, as one example of 3Dmemory devices 1000 and 1001 in FIGS. 10A and 10B, 3D memory device 1100is a bonded chip including first semiconductor structure 102, secondsemiconductor structure 104, and third semiconductor structure 106,which are stacked over one another in different planes in the verticaldirection (e.g., they-direction in FIG. 11A), according to someimplementations. First and second semiconductor structures 102 and 104are bonded at bonding interface 103 therebetween, and second and thirdsemiconductor structures 104 and 106 are bonded at bonding interface 105therebetween, according to some implementations.

As shown in FIG. 11A, third semiconductor structure 106 can includesemiconductor layer 1006 having semiconductor materials. In someimplementations, semiconductor layer 1006 is a silicon substrate havingsingle crystalline silicon. Third semiconductor structure 106 can alsoinclude a device layer 1102 above and in contact with semiconductorlayer 1006. In some implementations, device layer 1102 includes a firstperipheral circuit 1104 and a second peripheral circuit 1106. Firstperipheral circuit 1104 can include HV circuits 406, such as drivingcircuits (e.g., string drivers 704 in row decoder/word line driver 308and drivers in column decoder/bit line driver 306), and secondperipheral circuit 1106 can include LV circuits 404, such as page buffercircuits (e.g., page buffer circuits 702 in page buffer 304) and logiccircuits (e.g., in control logic 312). In some implementations, firstperipheral circuit 1104 includes a plurality of transistors 1108 incontact with semiconductor layer 1006, and second peripheral circuit1106 includes a plurality of transistors 1110 in contact withsemiconductor layer 1006. Transistors 1108 and 1110 can include anytransistors disclosed herein, such as planar transistors 500 and 3Dtransistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 1108or 1110 includes a gate dielectric, and the thickness of the gatedielectric of transistor 1108 (e.g., in HV circuit 406) is larger thanthe thickness of the gate dielectric of transistor 1110 (e.g., in LVcircuit 404) due to the higher voltage applied to transistor 1108 thantransistor 1110. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 1108 and 1110) can be formedon or in semiconductor layer 1006 as well.

In some implementations, third semiconductor structure 106 furtherincludes an interconnect layer 1112 above device layer 1102 to transferelectrical signals to and from peripheral circuits 1106 and 1104. Asshown in FIG. 11A, interconnect layer 1112 can be vertically betweenbonding interface 105 and device layer 1102 (including transistors 1108and 1110 of peripheral circuits 1104 and 1106). Interconnect layer 1112can include a plurality of interconnects (also referred to herein as“contacts”), including lateral lines and vias. As used herein, the term“interconnects” can broadly include any suitable types of interconnects,such as middle-end-of-line (MEOL) interconnects and back-end-of-line(BEOL) interconnects. The interconnects in interconnect layer 1112 canbe coupled to transistors 1108 and 1110 of peripheral circuits 1104 and1106 in device layer 1102. Interconnect layer 1112 can further includeone or more interlayer dielectric (ILD) layers (also known as“intermetal dielectric (IMD) layers”) in which the lateral lines andvias can form. That is, interconnect layer 1112 can include laterallines and vias in multiple ILD layers. In some implementations, thedevices in device layer 1102 are coupled to one another through theinterconnects in interconnect layer 1112. For example, peripheralcircuit 1104 may be coupled to peripheral circuit 1106 throughinterconnect layer 1112. The interconnects in interconnect layer 1112can include conductive materials including, but not limited to, W, Co,Cu, Al, silicides, or any combination thereof. The ILD layers ininterconnect layer 1112 can include dielectric materials including, butnot limited to, silicon oxide, silicon nitride, silicon oxynitride, lowdielectric constant (low-k) dielectrics, or any combination thereof. Insome implementations, the interconnects in interconnect layer 1112include W, which has a relatively high thermal budget (compatible withhigh-temperature processes) and good quality (fewer detects, e.g.,voids) among conductive metal materials.

Second semiconductor structure 104 can be bonded on top of thirdsemiconductor structure 106 in a back-to-face manner at bondinginterface 105. Second semiconductor structure 104 can includesemiconductor layer 1004 having semiconductor materials. In someimplementations, semiconductor layer 1004 is a layer of singlecrystalline silicon transferred from a silicon substrate or an SOIsubstrate and attached to the top surface of third semiconductorstructure 106 by transfer bonding. In some implementations, bondinginterface 105 is disposed vertically between interconnect layer 1112 andsemiconductor layer 1004 as a result of transfer bonding, whichtransfers semiconductor layer 1004 from another substrate and bondssemiconductor layer 1004 onto third semiconductor structure 106 asdescribed below in detail. In some implementations, bonding interface105 is the place at which interconnect layer 1112 and semiconductorlayer 1004 are met and bonded. In practice, bonding interface 105 can bea layer with a certain thickness that includes the top surface ofinterconnect layer 1112 of third semiconductor structure 106 and thebottom surface of semiconductor layer 1004 of second semiconductorstructure 104. In some implementations, dielectric layer(s) (e.g.,silicon oxide layer) are formed vertically between bonding interface 105and semiconductor layer 1004 and/or between bonding interface 105 andinterconnect layer 1112 to facilitate the transfer bonding ofsemiconductor layer 1004 onto interconnect layer 1112. Thus, it isunderstood that bonding interface 105 may include the surfaces of thedielectric layer(s) in some examples.

Second semiconductor structure 104 can include a device layer 1114 aboveand in contact with semiconductor layer 1004. In some implementations,device layer 1114 includes a third peripheral circuit 1116 and a fourthperipheral circuit 1118. Third peripheral circuit 1116 can include LLVcircuits 402, such as I/O circuits (e.g., in interface 316 and data bus318), and fourth peripheral circuit 1118 can include LV circuits 404,such as page buffer circuits (e.g., page buffer circuits 702 in pagebuffer 304) and logic circuits (e.g., in control logic 312). In someimplementations, third peripheral circuit 1116 includes a plurality oftransistors 1120, and fourth peripheral circuit 1118 includes aplurality of transistors 1122 as well. Transistors 1120 and 1122 caninclude any transistors disclosed herein, such as planar transistors 500and 3D transistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 1120or 1122 includes a gate dielectric, and the thickness of the gatedielectric of transistor 1120 (e.g., in LLV circuit 402) is smaller thanthe thickness of the gate dielectric of transistor 1122 (e.g., in LVcircuit 404) due to the lower voltage applied to transistor 1120 thantransistor 1122. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 1120 and 1122) can be formedon or in semiconductor layer 1004 as well.

Moreover, the different voltages applied to different transistors 1120,1122, 1108, and 1110 in second and third semiconductor structures 104and 106 can lead to differences of device dimensions between second andthird semiconductor structures 104 and 106. In some implementations, thethickness of the gate dielectric of transistor 1108 (e.g., in HV circuit406) is larger than the thickness of the gate dielectric of transistor1120 (e.g., in LLV circuit 402) due to the higher voltage applied totransistor 1108 than transistor 1120. In some implementations, thethickness of the gate dielectric of transistor 1122 (e.g., in LV circuit404) is the same as the thickness of the gate dielectric of transistor1110 (e.g., in LV circuit 404) due to the same voltage applied totransistor 1122 and transistor 1110. In some implementations, thethickness of semiconductor layer 1006 in which transistor 1108 (e.g., inHV circuit 406) is formed is larger than the thickness of semiconductorlayer 1004 in which transistor 1120 (e.g., in LLV circuit 402) is formeddue to the higher voltage applied to transistor 1108 than transistor1120.

As shown in FIG. 11A, second semiconductor structure 104 can furtherinclude an interconnect layer 1126 above device layer 1114 to transferelectrical signals to and from peripheral circuits 1116 and 1118. Asshown in FIG. 11A, interconnect layer 1126 can be vertically betweenbonding interface 103 and device layer 1114 (including transistors 1120and 1122 of peripheral circuits 1116 and 1118). Interconnect layer 1126can include a plurality of interconnects coupled to transistors 1120 and1122 of peripheral circuits 1116 and 1118 in device layer 1114.Interconnect layer 1126 can further include one or more ILD layers inwhich the interconnects can form. That is, interconnect layer 1126 caninclude lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 1114 are coupled to oneanother through the interconnects in interconnect layer 1126. Forexample, peripheral circuit 1116 may be coupled to peripheral circuit1118 through interconnect layer 1126. The interconnects in interconnectlayer 1126 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 1126 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof.

In some implementations, the interconnects in interconnect layer 1126include Cu, which has a relatively low resistivity (better electricalperformance) among conductive metal materials. As described below withrespect to the fabrication process, although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), since thefabrication of interconnect layer 1126 can occur after thehigh-temperature processes in forming device layers 1114 and 1102 insecond and third semiconductor structures 104 and 106, as well as beingseparated from the high-temperature processes in forming firstsemiconductor structure 102, the interconnects of interconnect layer1126 having Cu can become feasible.

As shown in FIG. 11A, second semiconductor structure 104 can furtherinclude one or more contacts 1124 extending vertically throughsemiconductor layer 1004. Contact 1124 can extend vertically furtherthrough bonding interface 105 to be in contact with the interconnects ininterconnect layer 1112. In some implementations, contact 1124 couplesthe interconnects in interconnect layer 1126 to the interconnects ininterconnect layer 1112 to make an electrical connection across bondinginterface 105 between second and third semiconductor structures 104 and106. Contact 1124 can include conductive materials including, but notlimited to, W, Co, Cu, Al, silicides, or any combination thereof. Insome implementations, contact 1124 includes W. In some implementations,contact 1124 includes a via surrounded by a dielectric spacer (e.g.,having silicon oxide) to electrically separate the via fromsemiconductor layer 1004. Depending on the thickness of semiconductorlayer 1004, contact 1124 can be an ILV having a depth (in the verticaldirection) in the submicron-level (e.g., between 10 nm and 1 μm), or aTSV having a depth (in the vertical direction) in the micron- or tensmicron-level (e.g., between 1 μm and 100 μm).

As shown in FIG. 11A, second semiconductor structure 104 can furtherinclude a bonding layer 1010 at bonding interface 103 and above and incontact with interconnect layer 1126. Bonding layer 1010 can include aplurality of bonding contacts 1011 and dielectrics electricallyisolating bonding contacts 1011. Bonding contacts 1011 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, bondingcontacts 1011 of bonding layer 1010 include Cu. The remaining area ofbonding layer 1010 can be formed with dielectrics including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof. Bonding contacts 1011 andsurrounding dielectrics in bonding layer 1010 can be used for hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal (e.g., Cu-to-Cu) bonding and dielectric-dielectric(e.g., SiO₂-to-SiO₂) bonding simultaneously.

As shown in FIG. 11A, first semiconductor structure 102 can furtherinclude a bonding layer 1008 at bonding interface 103, e.g., on theopposite side of bonding interface 103 with respect to bonding layer1010 in second semiconductor structure 104. Bonding layer 1008 caninclude a plurality of bonding contacts 1009 and dielectricselectrically isolating bonding contacts 1009. Bonding contacts 1009 caninclude conductive materials, such as Cu. The remaining area of bondinglayer 1008 can be formed with dielectric materials, such as siliconoxide. Bonding contacts 1009 and surrounding dielectrics in bondinglayer 1008 can be used for hybrid bonding. In some implementations,bonding interface 103 is the place at which bonding layers 1008 and 1010are met and bonded. In practice, bonding interface 103 can be a layerwith a certain thickness that includes the top surface of bonding layer1010 of second semiconductor structure 104 and the bottom surface ofbonding layer 1008 of first semiconductor structure 102.

Although not shown in FIG. 11A, it is understood that in some examples,similar to bonding interface 103, bonding interface 105 may result fromhybrid bonding and thus, be disposed vertically between two bondinglayers (e.g., bonding layers 1012 and 1014 of 3D memory device 1001 inFIG. 10B) each including bonding contacts in second and thirdsemiconductor structures 104 and 106, respectively.

As shown in FIG. 11A, first semiconductor structure 102 can furtherinclude an interconnect layer 1128 above bonding layer 1008 to transferelectrical signals. Interconnect layer 1128 can include a plurality ofinterconnects, such as MEOL interconnects and BEOL interconnects. Insome implementations, the interconnects in interconnect layer 1128 alsoinclude local interconnects, such as bit line contacts and word linecontacts. Interconnect layer 1128 can further include one or more ILDlayers in which the lateral lines and vias can form. The interconnectsin interconnect layer 1128 can include conductive materials including,but not limited to, W, Co, Cu, Al, silicides, or any combinationthereof. The ILD layers in interconnect layer 1128 can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof.

As shown in FIG. 11A, first semiconductor structure 102 can include amemory cell array, such as an array of NAND memory strings 208 aboveinterconnect layer 1128. In some implementations, interconnect layer1128 is vertically between NAND memory strings 208 and bonding interface103. Each NAND memory string 208 extends vertically through a pluralityof pairs each including a conductive layer and a dielectric layer,according to some implementations. The stacked and interleavedconductive layers and dielectric layers are also referred to herein as astack structure, e.g., a memory stack 1127. Memory stack 1127 may be anexample of memory stack 804 in FIGS. 8A-8C, and the conductive layer anddielectric layer in memory stack 1127 may be examples of gate conductivelayers 806 and dielectric layer 808, respectively, in memory stack 804.The interleaved conductive layers and dielectric layers in memory stack1127 alternate in the vertical direction, according to someimplementations. Each conductive layer can include a gate electrode(gate line) surrounded by an adhesive layer and a gate dielectric layer.The adhesive layer can include conductive materials, such as titaniumnitride (TiN), which can improve the adhesiveness between the gateelectrode and the gate dielectric layer. The gate electrode of theconductive layer can extend laterally as a word line, ending at one ormore staircase structures of memory stack 1127.

In some implementations, each NAND memory string 208 is a “charge trap”type of NAND memory string including any suitable channel structuresdisclosed herein, such as bottom plug channel structure 812A, sidewallplug channel structure 812B, or bottom open channel structure 812C,described above in detail with respect to FIGS. 8A-8C. It is understoodthat NAND memory strings 208 are not limited to the “charge trap” typeof NAND memory strings and may be “floating gate” type of NAND memorystrings in other examples.

As shown in FIG. 11A, first semiconductor structure 102 can furtherinclude a semiconductor layer 1002 disposed above memory stack 1127 andin contact with the sources of NAND memory strings 208. In someimplementations, NAND memory strings 208 are disposed vertically betweenbonding interface 103 and semiconductor layer 1002. Semiconductor layer1002 can include semiconductor materials. In some implementations,semiconductor layer 1002 is a thinned silicon substrate having singlecrystalline silicon on which memory stack 1727 and NAND memory strings208 (e.g., including bottom plug channel structure 812A or sidewall plugchannel structure 812B) are formed. It is understood that in someexamples, trench isolations and doped regions (not shown) may be formedin semiconductor layer 1002 as well.

As shown in FIG. 11A, first semiconductor structure 102 can furtherinclude a pad-out interconnect layer 902 above and in contact withsemiconductor layer 1002. In some implementations, semiconductor layer1002 is disposed vertically between pad-out interconnect layer 902 andNAND memory strings 208. Pad-out interconnect layer 902 can includeinterconnects, e.g., contact pads 1132, in one or more ILD layers.Pad-out interconnect layer 902 and interconnect layer 1128 can be formedon opposite sides of semiconductor layer 1002. In some implementations,the interconnects in pad-out interconnect layer 902 can transferelectrical signals between 3D memory device 1100 and external devices,e.g., for pad-out purposes.

As shown in FIG. 11A, first semiconductor structure 102 can furtherinclude one or more contacts 1130 extending vertically throughsemiconductor layer 1002. In some implementations, contact 1130 couplesthe interconnects in interconnect layer 1128 to contact pads 1132 inpad-out interconnect layer 902 to make an electrical connection throughsemiconductor layer 1002. Contact 1130 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, silicides, or anycombination thereof. In some implementations, contact 1130 includes W.In some implementations, contact 1130 includes a via surrounded by adielectric spacer (e.g., having silicon oxide) to electrically separatethe via from semiconductor layer 1002. Depending on the thickness ofsemiconductor layer 1002, contact 1130 can be an ILV having a depth inthe submicron-level (e.g., between 10 nm and 1 μm), or a TSV having adepth in the micron- or tens micron-level (e.g., between 1 μm and 100μm).

As a result, peripheral circuits 1104, 1106, 1116, and 1118 in third andsecond semiconductor structures 106 and 104 can be coupled to NANDmemory strings 208 in first semiconductor structure 102 through variousinterconnection structures, including interconnect layers 1112, 1126,and 1128, bonding layers 1008 and 1010, as well as contacts 1124.Moreover, peripheral circuits 1104, 1106, 1116, and 1118 and NAND memorystrings 208 in 3D memory device 1100 can be further coupled to externaldevices through contacts 1130 and pad-out interconnect layer 902.

It is understood that the material of semiconductor layer 1002 in firstsemiconductor structure 102 is not limited to single crystalline siliconas described above with respect to FIG. 11A and may be any othersuitable semiconductor materials. For example, as shown in FIG. 11B, a3D memory device 1101 may include semiconductor layer 1002 havingpolysilicon in first semiconductor structure 102. NAND memory strings208 of 3D memory device 1101 in contact with semiconductor layer 1002having polysilicon can include any suitable channel structures disclosedherein that are in contact with a polysilicon layer, such as bottom openchannel structure 812C. In some implementations, NAND memory strings 208of 3D memory device 1101 are “floating gate” type of NAND memorystrings, and semiconductor layer 1002 having polysilicon is in contactwith the “floating gate” type of NAND memory strings as the source platethereof. It is understood that the details of the same components (e.g.,materials, fabrication process, functions, etc.) in both 3D memorydevices 1100 and 1101 are not repeated for ease of description.

It is also understood that the pad-out of 3D memory devices is notlimited to from first semiconductor structure 102 having NAND memorystrings 208 as shown in FIGS. 11A and 11B (corresponding to FIG. 9B) andmay be from third semiconductor structure 106 having peripheral circuit1104 (corresponding to FIG. 9A). For example, as shown in FIG. 11C, a 3Dmemory device 1103 may include pad-out interconnect layer 902 in thirdsemiconductor structure 106. Pad-out interconnect layer 902 can be incontact with semiconductor layer 1006 of third semiconductor structure106 on which transistors 1108 of peripheral circuit 1104 are formed. Insome implementations, third semiconductor structure 106 further includesone or more contacts 1134 extending vertically through semiconductorlayer 1006. In some implementations, contact 1134 couples theinterconnects in interconnect layer 1112 in third semiconductorstructure 106 to contact pads 1132 in pad-out interconnect layer 902 tomake an electrical connection through semiconductor layer 1006. Contact1134 can include conductive materials including, but not limited to, W,Co, Cu, Al, silicides, or any combination thereof. In someimplementations, contact 1134 includes W. In some implementations,contact 1134 includes a via surrounded by a dielectric spacer (e.g.,having silicon oxide) to electrically separate the via fromsemiconductor layer 1006. Depending on the thickness of semiconductorlayer 1006, contact 1134 can be an ILV having a depth in thesubmicron-level (e.g., between 10 nm and 1 μm), or a TSV having a depthin the micron- or tens micron-level (e.g., between 1 μm and 100 μm). Itis understood that the details of the same components (e.g., materials,fabrication process, functions, etc.) in both 3D memory devices 1100 and1103 are not repeated for ease of description.

It is further understood that in some examples, similar to bondinginterface 103, bonding interface 105 may result from hybrid bonding andthus, be disposed vertically between two bonding layers each includingbonding contacts in second and third semiconductor structures 104 and106, respectively. For example, as shown in FIG. 11C, 3D memory device1103 may include bonding layers 1012 and 1014 in second and thirdsemiconductor structures 104 and 106, respectively, at bonding interface105, i.e., on opposite sides of bonding interface 105. Bonding layer1012 or 1014 can include a plurality of bonding contacts 1013 or 1015and dielectrics electrically isolating bonding contacts 1013 or 1015.Bonding contacts 1013 and 1015 can include conductive materials, such asCu. The remaining area of bonding layer 1012 or 1014 can be formed withdielectric materials, such as silicon oxide. Bonding contacts 1013 or1015 and surrounding dielectrics in bonding layer 1012 or 1014 can beused for hybrid bonding. In some implementations, bonding interface 105is the place at which bonding layers 1012 and 1014 are met and bonded.In practice, bonding interface 105 can be a layer with a certainthickness that includes the top surface of bonding layer 1014 of thirdsemiconductor structure 106 and the bottom surface of bonding layer 1012of second semiconductor structure 104. Contact 1124 can be coupled tobonding contacts 1013, and interconnect layer 1112 can be coupled tobonding contacts 1015. FIGS. 12A-12H illustrate a fabrication processfor forming the 3D memory devices in FIGS. 10A and 10B, according tosome aspects of the present disclosure. FIG. 14 illustrates a flowchartof a method 1400 for forming the 3D memory devices in FIGS. 10A and 10B,according to some aspects of the present disclosure. Examples of the 3Dmemory devices depicted in FIGS. 12A-12H and 14 include 3D memorydevices 1100, 1101, and 1103 depicted in FIGS. 11A-11C. FIGS. 12A-12Hand 14 will be described together. It is understood that the operationsshown in method 1400 are not exhaustive and that other operations can beperformed as well before, after, or between any of the illustratedoperations. Further, some of the operations may be performedsimultaneously, or in a different order than shown in FIG. 14 . Forexample, operation 1402 may be performed after operation 1408 or inparallel with operations 1404-1408.

Referring to FIG. 14 , method 1400 starts at operation 1402, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 12D, a stack structure, such as a memory stack1226 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 1224. To form memory stack 1226, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 1224. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, chemical vapor deposition(CVD), physical vapor deposition (PVD), atomic layer deposition (ALD),or any combination thereof. Memory stack 1226 can then be formed by agate replacement process, e.g., replacing the sacrificial layers withthe conductive layers using wet/dry etch of the sacrificial layersselective to the dielectric layers and filling the resulting recesseswith the conductive layers. In some implementations, each conductivelayer includes a metal layer, such as a layer of W. It is understoodthat memory stack 1226 may be formed by alternatingly depositingconductive layers (e.g., doped polysilicon layers) and dielectric layers(e.g., silicon oxide layers) without the gate replacement process insome examples. In some implementations, a pad oxide layer (e.g.,thermally grown local oxidation of silicon (LOCOS)) including siliconoxide is formed between memory stack 1226 and silicon substrate 1224.

As illustrated in FIG. 12D, NAND memory strings 1228 are formed abovesilicon substrate 1224, each of which extends vertically through memorystack 1226 to be in contact with silicon substrate 1224. In someimplementations, fabrication processes to form NAND memory string 1228include forming a channel hole through memory stack 1226 (or thedielectric stack) and into silicon substrate 1224 using dry etching/andor wet etching, such as deep reactive-ion etching (DRIE), followed bysubsequently filling the channel hole with a plurality of layers, suchas a memory film (e.g., a tunneling layer, a storage layer, and ablocking layer) and a semiconductor layer, using thin film depositionprocesses such as ALD, CVD, PVD, or any combination thereof. It isunderstood that the details of fabricating NAND memory strings 1228 mayvary depending on the types of channel structures of NAND memory strings1228 (e.g., bottom plug channel structure 812A, sidewall plug channelstructure 812B, or bottom open channel structure 812C in FIGS. 8A-8C)and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 12D, an interconnect layer 1230 is formedabove memory stack 1226 and NAND memory strings 1228. Interconnect layer1230 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 1228. Insome implementations, interconnect layer 1230 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 1230 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, chemicalmechanical polishing (CMP), wet/dry etch, or any other suitableprocesses. The ILD layers can include dielectric materials deposited byone or more thin film deposition processes including, but not limitedto, CVD, PVD, ALD, or any combination thereof. The ILD layers andinterconnects illustrated in FIG. 12D can be collectively referred to asinterconnect layer 1230.

In some implementations, a first bonding layer is formed aboveinterconnect layer. The first bonding layer can include a plurality offirst bonding contacts. As illustrated in FIG. 12D, a bonding layer 1232is formed above interconnect layer 1230. Bonding layer 1232 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 1230 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1230by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 1400 proceeds to operation 1404, as illustrated in FIG. 14 , inwhich a first transistor is formed on a second substrate. The secondsubstrate can be a silicon substrate having single crystalline silicon.As illustrated in FIG. 12A, a plurality of transistors 1204 and 1206 areformed on a silicon substrate 1202. Transistors 1204 and 1206 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 1202 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 1204 and 1206. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 1202 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 1204 isdifferent from the thickness of gate dielectric of transistor 1206, forexample, by depositing a thicker silicon oxide film in the region oftransistor 1204 than the region of transistor 1206, or by etching backpart of the silicon oxide film deposited in the region of transistor1206. It is understood that the details of fabricating transistors 1204and 1206 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 1208 is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 12A, an interconnect layer 1208 can be formed above transistors1204 and 1206. Interconnect layer 1208 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 1204 and 1206. In some implementations, interconnectlayer 1208 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 1208 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 12A can be collectively referred to as interconnectlayer 1208. In some implementations, the interconnects in interconnectlayer 1208 include W, which has a relatively high thermal budget amongconductive metal materials to sustain later high-temperature processes.

Method 1400 proceeds to operation 1406, as illustrated in FIG. 14 , inwhich a semiconductor layer is formed above the first transistor. Thesemiconductor layer can include single crystalline silicon. In someimplementations, to form the semiconductor layer, another substrate andthe second substrate are bonded in a face-to-face manner, and the othersubstrate is thinned to leave the semiconductor layer. The bonding caninclude transfer bonding. The other substrate can be a silicon substratehaving single crystalline silicon.

As illustrated in FIG. 12B, a semiconductor layer 1210, such as a singlecrystalline silicon layer, is formed above interconnect layer 1208 andtransistors 1204 and 1206. Semiconductor layer 1210 can be attachedabove interconnect layer 1208 to form a bonding interface 1212vertically between semiconductor layer 1210 and interconnect layer 1208.The lateral dimensions (e.g., the dimension in the x-direction) ofsemiconductor layer 1210 are the same as those of silicon substrate 1202or silicon substrate 1224, according to some implementations. In someimplementations, to form semiconductor layer 1210, another siliconsubstrate (not shown in FIG. 12B) and silicon substrate 1202 are bondedin a face-to-face manner (i.e., having the components formed on siliconsubstrate 1202, such as transistors 1204 and 1206, facing toward theother silicon substrate) using transfer bonding, thereby forming bondinginterface 1212. The other silicon substrate can then be thinned usingany suitable processes to leave semiconductor layer 1210 attached aboveinterconnect layer 1208. The same “face-to-face” manner as describedabove is applied throughout the present disclosure in describing otherfigures.

FIGS. 48A-48D illustrate a fabrication process of transfer bonding,according to some aspects of the present disclosure. As illustrated inFIG. 48A, a function layer 4804 can be formed on a base substrate 4802.Function layer 4804 can include device layers, interconnect layers,and/or any suitable layers disclosed herein, such as transistors 1204and 1206 and interconnect layer 1208 in FIG. 12B. A transfer substrate4806, such as a silicon substrate having single crystalline silicon, isprovided. In some implementations, transfer substrate 4806 is a singlecrystalline silicon substrate. As illustrated in FIG. 48B, transfersubstrate 4806 and base substrate 4802 (and function layer 4804 formedthereon) can be bonded in a face-to-face manner using any suitablesubstrate/wafer bonding processes including, for example, anodic bondingand fusion (direct) bonding, thereby forming a bonding interface 4810between transfer substrate 4806 and base substrate 4802. In one example,fusion bonding may be performed between layers of silicon and silicon,silicon and silicon oxide, or silicon oxide and silicon oxide withpressure and heat. In another example, anodic bonding may be performedbetween layers of silicon oxide (in an ionic glass) and silicon withvoltage, pressure, and heat. It is understood that depending on thebonding process, dielectric layers (e.g., silicon oxide layers) may beformed on one or both sides of bonding interface 4810. For example,silicon oxide layers may be formed on the top surfaces of both transfersubstrate 4806 and function layer 4804 to allow SiO₂—SiO₂ bonding usingfusion bonding. Or silicon oxide layer may be formed only on functionlayer 4804 to allow SiO₂—Si bonding using anodic bonding or fusionbonding. In some implementations in which a silicon oxide layer isformed on transfer substrate 4806 (e.g., shown in FIG. 48B), transfersubstrate 4806 can be flipped upside, such that the silicon oxide layeron transfer substrate 4806 faces down toward base substrate 4802 beforethe bonding.

As illustrated in FIG. 48C, a cut layer 4812 can be formed in transfersubstrate 4806, for example, using ion implantation. In someimplementations, light elements, such as hydrogen ions, are implantedinto transfer substrate 4806 to a desired depth, for example, bycontrolling the energy of the ion impanation process, to form cut layer4812. As illustrated in FIG. 48D, transfer substrate 4806 can be thinnedto leave only a semiconductor layer 4814 vertically between cut layer4812 and bonding interface 4810. In some implementations, transfersubstrate 4806 is split at cut layer 4812 by applying a mechanical forceto transfer substrate 4806, i.e., peeling off the remainder of transfersubstrate 4806 from semiconductor layer 4814. It is understood thattransfer substrate 4806 may be split at cut layer 4812 by any suitablemeans, not limited to mechanical force alone, such as thermal means,acoustic means, optical means, etc., or any combination thereof. As aresult, semiconductor layer 4814 can be transferred from transfersubstrate 4806 and bonded onto base substrate 4802 (and function layer4804) using a transfer bonding process. In some implementations, aplanarization process, such as chemical mechanical polishing (CMP), isperformed on semiconductor layer 4812 to polish and smooth the topsurface of semiconductor layer 4812 and adjust the thickness ofsemiconductor layer 4812. Semiconductor layer 4814 thus can have thesame material as transfer substrate 4806, such as single crystallinesilicon. The thickness of semiconductor layer 4814 can be determined bythe depth of cut layer 4812, for example, by adjusting the implantationenergy, and/or by the planarization process. Moreover, the remainder oftransfer substrate 4806 can be re-used in the same manner to formsemiconductor layers bonded onto other base substrates, thereby reducingthe material cost of the transfer bonding process.

FIGS. 49A-49D illustrate another fabrication process of transferbonding, according to some aspects of the present disclosure. Asillustrated in FIG. 49A, function layer 4804 can be formed on basesubstrate 4802. Function layer 4804 can include device layers,interconnect layers, and/or any suitable layers disclosed herein, suchas transistors 1204 and 1206 and interconnect layer 1208 in FIG. 12B. AnSOI substrate 4902, including a base/handle layer 4904, a buried oxidelayer (BOx) 4906, and a device layer 4908, can be flipped upside downfacing toward base substrate 4802. As illustrated in FIG. 49B, SOIsubstrate 4902 and base substrate 4802 (and function layer 4804 formedthereon) can be bonded in a face-to-face manner using any suitablesubstrate/wafer bonding processes including, for example, anodic bondingand fusion (direct) bonding, thereby forming a bonding interface 4912between SOI substrate 4902 and base substrate 4802. In one example,fusion bonding may be performed between layers of silicon and silicon,silicon and silicon oxide, or silicon oxide and silicon oxide withpressure and heat. In another example, anodic bonding may be performedbetween layers of silicon oxide (in an ionic glass) and silicon withvoltage, pressure, and heat. It is understood that depending on thebonding process, dielectric layers (e.g., silicon oxide layers) may beformed on one or both sides of bonding interface 4912. For example,silicon oxide layers may be formed on the top surfaces of both SOIsubstrate 4902 and function layer 4804 to allow SiO₂—SiO₂ bonding usingfusion bonding. Or silicon oxide layer may be formed only on functionlayer 4804 to allow SiO₂—Si bonding using anodic bonding or fusionbonding.

As illustrated in FIGS. 49C and 49D, SOI substrate 4902 (shown in FIG.49B) can be thinned by sequentially removing base/handle layer 4904 andburied oxide layer 4906, for example, using wet/dry etching and/or CMPprocesses, to leave only device layer 4908 (as a semiconductor layer) atbonding interface 4912. As a result, device layer 4908 can betransferred from SOI substrate 4902 and bonded onto base substrate 4802(and function layer 4804) as a semiconductor layer using anothertransfer bonding process. The transferred semiconductor layer thus canhave the same material as device layer 4908, such as single crystallinesilicon. The thickness of the semiconductor layer can be the same as thethickness of device layer 4908. It is understood that in some examples,device layer 4908 may be further thinned using wet/dry etching and/orCMP processes, such that the transferred semiconductor layer may bethinned than device layer 4908.

Referring to FIG. 14 , method 1400 proceeds to operation 1408, in whicha second transistor is formed on the semiconductor layer. As illustratedin FIG. 12C, a plurality of transistors 1214 and 1216 are formed onsemiconductor layer 1210 having single crystalline silicon. Transistors1214 and 1216 can be formed by a plurality of processes including, butnot limited to, photolithography, dry/wet etch, thin film deposition,thermal growth, implantation, CMP, and any other suitable processes. Insome implementations, doped regions are formed in semiconductor layer1210 by ion implantation and/or thermal diffusion, which function, forexample, as wells and source/drain regions of transistors 1214 and 1216.In some implementations, isolation regions (e.g., STIs) are also formedin semiconductor layer 1210 by wet/dry etch and thin film deposition. Insome implementations, the thickness of gate dielectric of transistor1214 is different from the thickness of gate dielectric of transistor1216, for example, by depositing a thicker silicon oxide film in theregion of transistor 1214 than the region of transistor 1216, or byetching back part of the silicon oxide film deposited in the region oftransistor 1216. It is understood that the details of fabricatingtransistors 1214 and 1216 may vary depending on the types of thetransistors (e.g., planar transistors 500 or 3D transistors 600 in FIGS.5A, 5B, 6A, and 6B) and thus, are not elaborated for ease ofdescription.

In some implementations, an interconnect layer 1220 is formed above thetransistor on the semiconductor layer. The interconnect layer caninclude a plurality of interconnects in one or more ILD layers. Asillustrated in FIG. 12C, an interconnect layer 1220 can be formed abovetransistors 1214 and 1216. Interconnect layer 1220 can includeinterconnects of MEOL and/or BEOL in a plurality of ILD layers to makeelectrical connections with transistors 1214 and 1216. In someimplementations, interconnect layer 1220 includes multiple ILD layersand interconnects therein formed in multiple processes. For example, theinterconnects in interconnect layer 1220 can include conductivematerials deposited by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 12C can be collectively referred to as interconnect layer 1220.Different from interconnect layer 1208, in some implementations, theinterconnects in interconnect layer 1220 include Cu, which has arelatively low resistivity among conductive metal materials. It isunderstood that although Cu has a relatively low thermal budget(incompatible with high-temperature processes), using Cu as theconductive materials of the interconnects in interconnect layer 1220 maybecome feasible since there are no more high-temperature processes afterthe fabrication of interconnect layer 1220.

In some implementations, a contact through the semiconductor layer isformed. As illustrated in FIG. 12C, one or more contacts 1218 eachextending vertically through semiconductor layer 1210 is formed.Contacts 1218 can couple the interconnects in interconnect layers 1220and 1208. Contacts 1218 can be formed by first patterning contact holesthrough semiconductor layer 1210 and bonding interface 1212 to be incontact with the interconnects in interconnect layer 1208 usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., W or Cu). In some implementations,filling the contact holes includes depositing a spacer (e.g., a siliconoxide layer) before depositing the conductor.

In some implementations, a second bonding layer is formed above theinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIG. 12D, a bonding layer1222 is formed above interconnect layer 1220. Bonding layer 1222 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 1220 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1220by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor. For example,the adhesion layer may improve the adhesiveness of the conductor toavoid defects, the barrier layer may prevent metal ion (e.g., Cu ions)diffusing from the conductor into other structures to causecontamination, and the seed layer may facilitate the deposition of theconductor (e.g., Cu) in the contact holes to improve the depositionquality and speed.

Method 1400 proceeds to operation 1410, as illustrated in FIG. 14 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner. The first bonding contact in the first bondinglayer can be in contact with the second bonding contact in the secondbonding layer at a bonding interface after bonding the first and secondsubstrates. The bonding can include hybrid bonding.

As illustrated in FIG. 12E, silicon substrate 1224 and components formedthereon (e.g., memory stack 1226 and NAND memory strings 1228 formedtherethrough) are flipped upside down. Bonding layer 1232 facing down isbonded with bonding layer 1222 facing up, i.e., in a face-to-facemanner, thereby forming a bonding interface 1237. That is, siliconsubstrate 1224 and components formed thereon can be bonded with siliconsubstrate 1202 and components formed thereon in a face-to-face manner,such that the bonding contacts in bonding layer 1232 are in contact withthe bonding contacts in bonding layer 1222 at bonding interface 1237. Insome implementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 12E, it is understood that insome examples, silicon substrate 1202 and components formed thereon(e.g., transistors 1204, 1206, 1214, and 1216) can be flipped upsidedown, and bonding layer 1222 facing down can be bonded with bondinglayer 1232 facing up, i.e., in a face-to-face manner, thereby formingbonding interface 1237 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 1237 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 1232 and the bondingcontacts in bonding layer 1222 are aligned and in contact with oneanother, such that memory stack 1226 and NAND memory strings 1228 formedtherethrough can be coupled to transistors 1214, 1216,1204, and 1206through the bonded bonding contacts across bonding interface 1237,according to some implementations.

Method 1400 proceeds to operation 1412, as illustrated in FIG. 14 , inwhich the first substrate or the second substrate is thinned. Asillustrated in FIG. 12F, silicon substrate 1224 (shown in FIG. 12E) isthinned to become a semiconductor layer 1234 having single crystallinesilicon. Silicon substrate 1224 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof. It is understood thatalthough not shown in FIG. 12F, in some examples, silicon substrate 1202may be thinned to become a semiconductor layer having single crystallinesilicon.

Method 1400 proceeds to operation 1414, as illustrated in FIG. 14 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned second substrate or above the arrayof NAND memory strings. As illustrated in FIG. 12F, a pad-outinterconnect layer 1236 is formed on semiconductor layer 1234 (thethinned silicon substrate 1224) above NAND memory strings 1228. Pad-outinterconnect layer 1236 can include interconnects, such as contact pads1238, formed in one or more ILD layers. Contact pads 1238 can includeconductive materials including, but not limited to, W, Co, Cu, Al, dopedsilicon, silicides, or any combination thereof. The ILD layers caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some implementations, after the bonding andthinning, contacts 1235 are formed, extending vertically throughsemiconductor layer 1234, for example, by wet/dry etching followed bydepositing dielectric materials as spacers and conductive materials asconductors. Contacts 1235 can couple contact pads 1238 in pad-outinterconnect layer 1236 to the interconnects in interconnect layer 1230.It is understood that in some examples, contacts 1235 may be formed insilicon substrate 1224 before thinning (the formation of semiconductorlayer 1234) and be exposed from the backside of silicon substrate 1224(where the thinning occurs) after the thinning. It is further understoodthat although not shown in FIG. 12F, in some examples, a pad-outinterconnect layer may be formed on the thinned silicon substrate 1202,and contacts may be formed through the thinned silicon substrate 1202 tocouple the pad-out interconnect layer and interconnect layer 1208 acrossthe thinned silicon substrate 1202.

In some implementations, a semiconductor layer having polysilicon isformed. To form the semiconductor layer, the first substrate is removedand replaced with the semiconductor layer. As illustrated in FIG. 12G,silicon substrate 1224 (shown in FIG. 12F) is removed, for example,using wafer grinding, dry etch, wet etch, CMP, any other suitableprocesses, to expose the channel structures (e.g., bottom open channelstructure 812C in FIG. 8C) of NAND memory strings 1228 from the sourceend. As illustrated in FIG. 12H, a semiconductor layer 1240 havingpolysilicon is formed to be in contact with the sources of NAND memorystrings 1228. Semiconductor layer 1240 can be formed by depositingpolysilicon using one or more thin film deposition processes including,but not limited to, CVD, PVD, ALD, or any combination thereof.Similarly, pad-out interconnect layer 1236 including contact pads 1238can be formed on semiconductor layer 1240. Contacts 1242 can be formedthrough semiconductor layer 1240 having polysilicon after the formationof semiconductor layer 1240.

FIGS. 13A-13H illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 10A and 10B, according to some aspects of thepresent disclosure. FIG. 15 illustrates a flowchart of another method1500 for forming the 3D memory devices in FIGS. 10A and 10B, accordingto some aspects of the present disclosure. Examples of the 3D memorydevices depicted in FIGS. 13A-13H and 15 include 3D memory devices 1100,1101, and 1103 depicted in FIGS. 11A-11C. FIGS. 13A-13H and 15 will bedescribed together. It is understood that the operations shown in method1500 are not exhaustive and that other operations can be performed aswell before, after, or between any of the illustrated operations.Further, some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 15 . For example, operation 1502,1504, and 1506 may be performed in parallel.

Referring to FIG. 15 , method 1500 starts at operation 1502, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 13A, a stack structure, such as a memory stack1304 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 1302. To form memory stack 1304, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 1302. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 1304 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 1304 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 1304 and silicon substrate 1302.

As illustrated in FIG. 13A, NAND memory strings 1306 are formed abovesilicon substrate 1302, each of which extends vertically through memorystack 1304 to be in contact with silicon substrate 1302. In someimplementations, fabrication processes to form NAND memory string 1306include forming a channel hole through memory stack 1304 (or thedielectric stack) and into silicon substrate 1302 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 1306 may vary depending on the typesof channel structures of NAND memory strings 1306 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 13A, an interconnect layer 1308 is formedabove memory stack 1304 and NAND memory strings 1306. Interconnect layer1308 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 1306. Insome implementations, interconnect layer 1308 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 1308 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 13A can be collectively referred to as interconnect layer 1308.

In some implementations, a first bonding layer is formed aboveinterconnect layer. The first bonding layer can include a plurality offirst bonding contacts. As illustrated in FIG. 13A, a bonding layer 1310is formed above interconnect layer 1308. Bonding layer 1310 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 1308 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1308by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 1500 proceeds to operation 1504, as illustrated in FIG. 15 , inwhich a first transistor is formed on a second substrate. The secondsubstrate can be a silicon substrate having single crystalline silicon.As illustrated in FIG. 13B, a plurality of transistors 1314 and 1316 areformed on a silicon substrate 1312. Transistors 1314 and 1316 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 1312 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 1314 and 1316. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 1312 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 1314 isdifferent from the thickness of gate dielectric of transistor 1316, forexample, by depositing a thicker silicon oxide film in the region oftransistor 1314 than the region of transistor 1316, or by etching backpart of the silicon oxide film deposited in the region of transistor1316. It is understood that the details of fabricating transistors 1314and 1316 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 1318 is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 13B, an interconnect layer 1318 can be formed above transistors1314 and 1316. Interconnect layer 1318 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 1314 and 1316. In some implementations, interconnectlayer 1318 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 1318 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 13B can be collectively referred to as interconnectlayer 1318.

In some implementations, a second bonding layer is formed aboveinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIG. 13B, a bonding layer1320 is formed above interconnect layer 1318. Bonding layer 1320 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 1318 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1318by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 1500 proceeds to operation 1506, as illustrated in FIG. 15 , inwhich a second transistor is formed on a third substrate. The thirdsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, any two or all of operations 1502, 1504, and1506 are performed in parallel to reduce process time.

As illustrated in FIG. 13C, a plurality of transistors 1324 and 1326 areformed on a silicon substrate 1322. Transistors 1324 and 1326 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 1322 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 1324 and 1326. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 1322 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 1324 isdifferent from the thickness of gate dielectric of transistor 1326, forexample, by depositing a thicker silicon oxide film in the region oftransistor 1324 than the region of transistor 1326, or by etching backpart of the silicon oxide film deposited in the region of transistor1326. It is understood that the details of fabricating transistors 1324and 1326 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 1328 is formed above thetransistor on the third substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 13C, an interconnect layer 1328 can be formed above transistors1324 and 1326. Interconnect layer 1328 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 1324 and 1326. In some implementations, interconnectlayer 1328 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 1328 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 13C can be collectively referred to as interconnectlayer 1328.

In some implementations, a third bonding layer is formed aboveinterconnect layer. The third bonding layer can include a plurality ofthird bonding contacts. As illustrated in FIG. 13C, a bonding layer 1330is formed above interconnect layer 1328. Bonding layer 1330 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 1328 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1328by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 1500 proceeds to operation 1508, as illustrated in FIG. 15 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner. The first bonding contact in the first bondinglayer can be in contact with the second bonding contact in the secondbonding layer at a first bonding interface after bonding the first andsecond substrates. The bonding can include hybrid bonding.

As illustrated in FIG. 13D, silicon substrate 1302 and components formedthereon (e.g., memory stack 1304 and NAND memory strings 1306 formedtherethrough) are flipped upside down. Bonding layer 1310 facing down isbonded with bonding layer 1320 facing up, i.e., in a face-to-facemanner, thereby forming a bonding interface 1332. That is, siliconsubstrate 1302 and components formed thereon can be bonded with siliconsubstrate 1312 and components formed thereon in a face-to-face manner,such that the bonding contacts in bonding layer 1310 are in contact withthe bonding contacts in bonding layer 1320 at bonding interface 1332. Insome implementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 13D, it is understood that insome examples, silicon substrate 1312 and components formed thereon(e.g., transistors 1314 and 1316) can be flipped upside down, andbonding layer 1320 facing down can be bonded with bonding layer 1310facing up, i.e., in a face-to-face manner, thereby forming bondinginterface 1332 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 1332 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 1310 and the bondingcontacts in bonding layer 1320 are aligned and in contact with oneanother, such that memory stack 1304 and NAND memory strings 1306 formedtherethrough can be coupled to transistors 1314 and 1316 through thebonded bonding contacts across bonding interface 1332, according to someimplementations.

In some implementations, the second substrate is thinned, and a contactthrough the thinned second substrate is formed. As illustrated in FIG.13E, silicon substrate 1312 (shown in FIG. 13D) is thinned to become asemiconductor layer 1334 having single crystalline silicon. Siliconsubstrate 1312 can be thinned by processes including, but not limitedto, wafer grinding, dry etch, wet etch, CMP, any other suitableprocesses, or any combination thereof.

As illustrated in FIG. 13E, one or more contacts 1336 each extendingvertically through semiconductor layer 1334 is formed. Contacts 1336 canbe coupled to the interconnects in interconnect layer 1318. Contacts1336 can be formed by first patterning contact holes throughsemiconductor layer 1334 using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor. It is understood that in some examples,contacts 1336 may be formed in silicon substrate 1312 before thinning(the formation of semiconductor layer 1334, e.g., in FIG. 13B) and beexposed from the backside of silicon substrate 1312 (where the thinningoccurs) after the thinning.

In some implementations, a bonding layer is on the thinned secondsubstrate. The bonding layer can include a plurality of bondingcontacts. As illustrated in FIG. 13E, a bonding layer 1338 is formed onsemiconductor layer 1334, i.e., the backside of silicon substrate 1312(where the thinning occurs) after the thinning. Bonding layer 1338 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the surface ofsemiconductor layer 1334 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with contacts 1336 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing an adhesion (glue) layer, a barrier layer, and/or a seedlayer before depositing the conductor. It is understood that in someexamples, bonding layer 1338 may be a dielectric layer (e.g., a siliconoxide layer) without bonding contacts for fusion bonding, instead ofhybrid bonding. It is further understood that in some examples, bondinglayer 1338 may be omitted to expose the silicon surface of semiconductorlayer 1334 for anodic bonding or fusion bonding, instead of hybridbonding.

Method 1500 proceeds to operation 1510, as illustrated in FIG. 15 , inwhich the third substrate and the second substrate are bonded in aface-to-back manner. The third bonding contact in the third bondinglayer can be in contact with the fourth bonding contact in the fourthbonding layer at a second bonding interface after bonding the third andsecond substrates. The bonding can include hybrid bonding.

As illustrated in FIG. 13F, silicon substrate 1302 and components formedthereon after bonding with silicon substrate 1312 (e.g., memory stack1304, NAND memory strings 1306, and transistors 1314 and 1316) areflipped upside down. Bonding layer 1338 facing down is bonded withbonding layer 1330 facing up, i.e., in a face-to-face manner, therebyforming a bonding interface 1340. That is, silicon substrate 1302 andcomponents formed thereon can be bonded with silicon substrate 1322 andcomponents formed thereon in a face-to-face manner, such that thebonding contacts in bonding layer 1338 are in contact with the bondingcontacts in bonding layer 1330 at bonding interface 1340. In someimplementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 13F, it is understood that insome examples, silicon substrate 1322 and components formed thereon(e.g., transistors 1324 and 1326) can be flipped upside down, andbonding layer 1330 facing down can be bonded with bonding layer 1338facing up, i.e., in a face-to-face manner, thereby forming bondinginterface 1340 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 1340 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 1338 and the bondingcontacts in bonding layer 1330 are aligned and in contact with oneanother, such that memory stack 1304, NAND memory strings 1306, andtransistors 1314 and 1316 can be coupled to transistors 1324 and 1326through contacts 1336 through semiconductor layer 1334 and the bondedbonding contacts across bonding interface 1340, according to someimplementations. It is understood that in some examples, anodic bondingor fusion bonding, instead of hybrid bonding, may be performed to bondsilicon substrates 1302 and 1322 (and components formed thereon) atbonding interface 1340 without bonding contacts in bonding layer 1338.

Method 1500 proceeds to operation 1512, as illustrated in FIG. 15 , inwhich the first substrate or the third substrate is thinned. Asillustrated in FIG. 13G, silicon substrate 1322 (shown in FIG. 13F) isthinned to become a semiconductor layer 1342 having single crystallinesilicon. Silicon substrate 1322 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof.

Method 1500 proceeds to operation 1514, as illustrated in FIG. 15 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned third substrate or above the array ofNAND memory strings. As illustrated in FIG. 13G, a pad-out interconnectlayer 1346 is formed on semiconductor layer 1342 (the thinned siliconsubstrate 1322). Pad-out interconnect layer 1346 can includeinterconnects, such as contact pads 1348, formed in one or more ILDlayers. Contact pads 1348 can include conductive materials including,but not limited to, W, Co, Cu, Al, doped silicon, silicides, or anycombination thereof. The ILD layers can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, low-k dielectrics, or any combination thereof. In someimplementations, after the bonding and thinning, contacts 1344 areformed extending vertically through semiconductor layer 1342, forexample, by wet/dry etching followed by depositing dielectric materialsas spacers and conductive materials as conductors. Contacts 1344 cancouple contact pads 1348 in pad-out interconnect layer 1346 to theinterconnects in interconnect layer 1328. It is understood that in someexamples, contacts 1344 may be formed in silicon substrate 1322 beforethinning (the formation of semiconductor layer 1342, e.g., in FIG. 13C)and be exposed from the backside of silicon substrate 1322 (where thethinning occurs) after the thinning.

In some implementations, the first substrate is thinned, and the pad-outinterconnect layer is formed on the thinned first substrate. Asillustrated in FIG. 13H, silicon substrate 1302 (shown in FIG. 13F) isthinned to become a semiconductor layer 1303 having single crystallinesilicon. Silicon substrate 1302 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof. As illustrated in FIG.13H, pad-out interconnect layer 1346 is formed on semiconductor layer1303 (the thinned silicon substrate 1302). Pad-out interconnect layer1346 can include interconnects, such as contact pads 1348, formed in oneor more ILD layers. In some implementations, after the bonding andthinning, contacts 1335 are formed extending vertically throughsemiconductor layer 1303, for example, by wet/dry etching followed bydepositing dielectric materials as spacers and conductive materials asconductors. Contacts 1335 can couple contact pads 1348 in pad-outinterconnect layer 1346 to the interconnects in interconnect layer 1308.It is understood that in some examples, contacts 1335 may be formed insilicon substrate 1302 before thinning (i.e., before the formation ofsemiconductor layer 1303, e.g., in FIG. 13A) without fully penetratingthrough silicon substrate 1302 and be exposed from the backside ofsilicon substrate 1302 (where the thinning occurs) after the thinning.It is also understood that in some examples, the first substrate (e.g.,silicon substrate 1302 or semiconductor layer 1303 after thinning) maybe removed and replaced with a semiconductor layer having polysilicon ina similar manner as described above with respect to FIGS. 12G and 12H.

FIGS. 16A and 16B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 9A and 9B, according to various aspects of thepresent disclosure. 3D memory devices 1600 and 1601 may be examples of3D memory devices 900 and 901 in FIGS. 9A and 9B. As shown in FIG. 16A,3D memory device 1600 can include stacked first, second, and thirdsemiconductor structures 102, 104, and 106. In some implementations,first semiconductor structure 102 on one side of 3D memory device 1600includes a semiconductor layer 1002, a bonding layer 1008, and a memorycell array vertically between semiconductor layer 1002 and bonding layer1008. The memory cell array can include an array of NAND memory strings(e.g., NAND memory strings 208 disclosed herein), and the sources of thearray of NAND memory strings can be in contact with semiconductor layer1002 (e.g., as shown in FIGS. 8A-8C). Semiconductor layer 1002 caninclude semiconductor materials, such as single crystalline silicon(e.g., a silicon substrate or a thinned silicon substrate) orpolysilicon (e.g., a deposited layer), for example, depending on thetypes of channel structures of the NAND memory strings (e.g., bottomplug channel structure 812A, sidewall plug channel structure 812B, orbottom open channel structure 812C). Bonding layer 1008 can includeconductive bonding contacts (not shown) and dielectrics electricallyisolating the bonding contacts, which can be used, for example, forhybrid bonding as described below in detail.

In some implementations, second semiconductor structure 104 in theintermediate of 3D memory device 1600 includes a semiconductor layer1004, a bonding layer 1010, and some of the peripheral circuits of thememory cell array that are vertically between semiconductor layer 1004and bonding layer 1010. The transistors (e.g., planar transistors 500and 3D transistors 600) of the peripheral circuits can be in contactwith semiconductor layer 1004. Semiconductor layer 1004 can includesemiconductor materials, such as single crystalline silicon (e.g., alayer transferred from a silicon substrate or an SOI substrate). It isunderstood that in some examples, different from semiconductor layer1002 in first semiconductor structure 102, semiconductor layer 1004 onwhich the transistors are formed may include single crystalline silicon,but not polysilicon, due to the superior carrier mobility of singlecrystalline silicon that is desirable for transistors' performance.Similar to bonding layer 1008 in first semiconductor structure 102,bonding layer 1010 can also include conductive bonding contacts (notshown) and dielectrics electrically isolating the bonding contacts.Bonding interface 103 is vertically between and in contact with bondinglayers 1008 and 1010, respectively, according to some implementations.That is, bonding layers 1008 and 1010 can be disposed on opposite sidesof bonding interface 103, and the bonding contacts of bonding layer 1008can be in contact with the bonding contacts of bonding layer 1010 atbonding interface 103. As a result, a large number (e.g., millions) ofbonding contacts across bonding interface 103 can make direct,short-distance (e.g., micron-level) electrical connections betweenadjacent semiconductor structures 102 and 104.

In some implementations, third semiconductor structure 106 on anotherside of 3D memory device 1600 includes a semiconductor layer 1006 andsome of the peripheral circuits of the memory cell array, such thatsemiconductor layer 1006 is disposed vertically between the peripheralcircuits and bonding interface 105. The transistors (e.g., planartransistors 500 and 3D transistors 600) of the peripheral circuits canbe in contact with semiconductor layer 1006. Semiconductor layer 1006can include semiconductor materials, such as single crystalline silicon(e.g., a silicon substrate or a thinned silicon substrate). It isunderstood that in some examples, different from semiconductor layer1002 in first semiconductor structure 102, semiconductor layer 1006 onwhich the transistors are formed may include single crystalline silicon,but not polysilicon, due to the superior carrier mobility of singlecrystalline silicon that is desirable for transistors' performance. Itis understood that different from bonding interface 103 between firstand second semiconductor structures 102 and 104, which is betweenbonding layers 1008 and 1010 and results from hybrid bonding, bondinginterface 105 between second and third semiconductor structures 104 and106 may result from transfer bonding, as described below in detail, andthus, may not be formed between two bonding layers. That is, thirdsemiconductor structure 106 of 3D memory device 1600 in FIG. 16A doesnot include a bonding layer with bonding contacts, according to someimplementations. As a result, instead of bonding contacts, throughcontacts (e.g., ILVs/TSVs) across bonding interface 105 and throughsemiconductor layers 1004 and 1006 vertically between second and thirdsemiconductor structures 104 and 106 can make direct, short-distance(e.g., submicron-level) electrical connections between adjacentsemiconductor structures 104 and 106.

It is understood that in some examples, second and third semiconductorstructures 104 and 106 may also include bonding layers 1012 and 1014,respectively, disposed on opposite sides of bonding interface 105, asshown in FIG. 16B. In FIG. 16B, second semiconductor structure 104 of a3D memory device 1601 can include two bonding layers 1010 and 1012 ontwo sides thereof, and bonding layer 1012 can be disposed verticallybetween semiconductor layer 1004 and bonding interface 105. Thirdsemiconductor structure 106 of 3D memory device 1601 can include bondinglayer 1014 disposed vertically between bonding interface 105 andsemiconductor layer 1006. Each bonding layer 1012 or 1014 can includeconductive bonding contacts (not shown) and dielectrics electricallyisolating the bonding contacts. The bonding contacts of bonding layer1012 can be in contact with the bonding contacts of bonding layer 1014at bonding interface 105. As a result, bonding contacts across bondinginterface 105 in conjunction with through contacts (e.g., ILVs/TSVs)through semiconductor layers 1004 and 1006 can make direct,short-distance (e.g., micron-level) electrical connections betweenadjacent semiconductor structures 104 and 106.

As shown in FIGS. 16A and 16B, since third and second semiconductorstructures 106 and 104 are bonded in a back-to-back manner (e.g.,semiconductor layer 1006 being disposed on the bottom side of thirdsemiconductor structure 106, while semiconductor layer 1004 beingdisposed on the top side of second semiconductor structure 104 in FIGS.16A and 16B), the transistors in third and second semiconductorstructures 106 and 104 are disposed back-to-back, according to someimplementations. In some implementations, semiconductor layer 1006 isdisposed vertically between the transistors of the peripheral circuitsin third semiconductor structure 106 and bonding interface 105, and thetransistors of the peripheral circuits in second semiconductor structure104 are disposed vertically between bonding interface 103 andsemiconductor layer 1004. Moreover, since first and second semiconductorstructures 102 and 104 are bonded in a face-to-face manner (e.g.,semiconductor layer 1002 being disposed on the bottom side of firstsemiconductor structure 102, while semiconductor layer 1004 beingdisposed on the top side of second semiconductor structure 104 in FIGS.16A and 16B), the transistors of peripheral circuits in secondsemiconductor structure 104 and the memory cell array in firstsemiconductor structure 102 are disposed face to face, facing eachother, according to some implementations. It is understood that pad-outinterconnect layer 902 in FIG. 9A or 9B is omitted from 3D memorydevices 1600 and 1601 in FIGS. 16A and 16B for ease of illustration andmay be included in 3D memory devices 1600 and 1601 as described abovewith respect to FIGS. 9A and 9B.

As described above, second and third semiconductor structures 104 and106 can have peripheral circuits having transistors with differentapplied voltages. For example, third semiconductor structure 106 may beone example of semiconductor structure 408 including LLV circuits 402(and LV circuits 404 in some examples) in FIG. 4B, and secondsemiconductor structure 104 may be one example of semiconductorstructure 410 including HV circuits 406 (and LV circuits 404 in someexamples) in FIG. 4B, or vice versa. Thus, in some implementations,semiconductor layers 1006 and 1004 in third and second semiconductorstructures 106 and 104 have different thicknesses to accommodate thetransistors with different applied voltages. In one example, secondsemiconductor structure 104 may include HV circuits 406 and thirdsemiconductor structure 106 may include LLV circuits 402, and thethickness of semiconductor layer 1006 in third semiconductor structure106 may be smaller than the thickness of semiconductor layer 1004 insecond semiconductor structure 104. Moreover, in some implementations,the gate dielectrics of the transistors in third and secondsemiconductor structures 106 and 104 have different thicknesses as wellto accommodate the different applied voltages. In one example, secondsemiconductor structure 104 may include HV circuits 406 and thirdsemiconductor structure 106 may include LLV circuits 402, and thethickness of the gate dielectrics of the transistors in secondsemiconductor structure 104 may be larger (e.g., at least 5-fold) thanthe thickness of the gate dielectrics of the transistors in thirdsemiconductor structure 106.

FIGS. 17A-17C illustrate side views of various examples of 3D memorydevices 1600 and 1601 in FIGS. 16A and 16B, according to various aspectsof the present disclosure. As shown in FIG. 17A, as one example of 3Dmemory devices 1600 and 1601 in FIGS. 16A and 16B, 3D memory device 1700is a bonded chip including first semiconductor structure 102, secondsemiconductor structure 104, and third semiconductor structure 106,which are stacked over one another in different planes in the verticaldirection (e.g., the y-direction in FIG. 17A), according to someimplementations. First and second semiconductor structures 102 and 104are bonded at bonding interface 103 therebetween, and second and thirdsemiconductor structures 104 and 106 are bonded at bonding interface 105therebetween, according to some implementations.

As shown in FIG. 17A, third semiconductor structure 106 can includesemiconductor layer 1006 having semiconductor materials. In someimplementations, semiconductor layer 1006 is a silicon substrate havingsingle crystalline silicon. In some implementations, semiconductor layer1006 is a layer of single crystalline silicon transferred from a siliconsubstrate or an SOI substrate and attached to the backside of secondsemiconductor structure 104 by transfer bonding. Third semiconductorstructure 106 can also include a device layer 1702 above and in contactwith semiconductor layer 1006. In some implementations, device layer1702 includes a first peripheral circuit 1704 and a second peripheralcircuit 1706. First peripheral circuit 1704 can include LLV circuits402, such as I/O circuits (e.g., in interface 316 and data bus 318), andsecond peripheral circuit 1706 can include LV circuits 404, such as pagebuffer circuits (e.g., page buffer circuits 702 in page buffer 304) andlogic circuits (e.g., in control logic 312). In some implementations,first peripheral circuit 1704 includes a plurality of transistors 1708in contact with semiconductor layer 1006, and second peripheral circuit1706 includes a plurality of transistors 1710 in contact withsemiconductor layer 1006. Transistors 1708 and 1710 can include anytransistors disclosed herein, such as planar transistors 500 and 3Dtransistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 1708or 1710 includes a gate dielectric, and the thickness of the gatedielectric of transistor 1708 (e.g., in LLV circuit 402) is smaller thanthe thickness of the gate dielectric of transistor 1710 (e.g., in LVcircuit 404) due to the lower voltage applied to transistor 1708 thantransistor 1710. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 1708 and 1710) can be formedon or in semiconductor layer 1006 as well.

In some implementations, third semiconductor structure 106 furtherincludes an interconnect layer 1712 above device layer 1702 to transferelectrical signals to and from peripheral circuits 1706 and 1704. Asshown in FIG. 17A, device layer 1702 (including transistors 1708 and1710 of peripheral circuits 1704 and 1706) can be disposed verticallybetween bonding interface 105 and interconnect layer 1712. Interconnectlayer 1712 can include a plurality of interconnects. The interconnectsin interconnect layer 1712 can be coupled to transistors 1708 and 1710of peripheral circuits 1704 and 1706 in device layer 1702. Interconnectlayer 1712 can further include one or more ILD layers in which thelateral lines and vias can form. That is, interconnect layer 1712 caninclude lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 1702 are coupled to oneanother through the interconnects in interconnect layer 1712. Forexample, peripheral circuit 1704 may be coupled to peripheral circuit1706 through interconnect layer 1712. The interconnects in interconnectlayer 1712 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 1712 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof.

In some implementations, the interconnects in interconnect layer 1712include Cu, which has a relatively low resistivity (better electricalperformance) among conductive metal materials. As described below withrespect to the fabrication process, although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), since thefabrication of interconnect layer 1712 can occur after thehigh-temperature processes in forming device layers 1714 and 1702 insecond and third semiconductor structures 104 and 106, as well as beingseparated from the high-temperature processes in forming firstsemiconductor structure 102, the interconnects of interconnect layer1712 having Cu can become feasible.

As shown in FIG. 17A, second semiconductor structure 104 can furtherinclude one or more contacts 1723 extending vertically throughsemiconductor layer 1006. In some implementations, contacts 1723 arecoupled to the interconnects in interconnect layer 1712. Contact 1723can include conductive materials including, but not limited to, W, Co,Cu, Al, silicides, or any combination thereof. In some implementations,contact 1723 includes W. In some implementations, contact 1723 includesa via surrounded by a dielectric spacer (e.g., having silicon oxide) toelectrically separate the via from semiconductor layer 1006. Dependingon the thickness of semiconductor layer 1006, contact 1723 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm).

Second semiconductor structure 104 can be bonded with thirdsemiconductor structure 106 in a back-to-back manner at bondinginterface 105. Second semiconductor structure 104 can includesemiconductor layer 1004 having semiconductor materials. In someimplementations, bonding interface 105 is disposed vertically betweeninterconnect layer 1112 and semiconductor layer 1004 as a result oftransfer bonding, which transfers semiconductor layer 1004 from anothersubstrate and bonds semiconductor layer 1004 onto third semiconductorstructure 106 as described below in detail. In some implementations,bonding interface 105 is the place at which interconnect layer 1112 andsemiconductor layer 1004 are met and bonded. In practice, bondinginterface 105 can be a layer with a certain thickness that includes thetop surface of interconnect layer 1112 of third semiconductor structure106 and the bottom surface of semiconductor layer 1004 of secondsemiconductor structure 104. In some implementations, dielectriclayer(s) (e.g., silicon oxide layer) are formed vertically betweenbonding interface 105 and semiconductor layer 1004 and/or betweenbonding interface 105 and interconnect layer 1112 to facilitate thetransfer bonding of semiconductor layer 1004 onto interconnect layer1112. Thus, it is understood that bonding interface 105 may include thesurfaces of the dielectric layer(s) in some examples.

Second semiconductor structure 104 can include a device layer 1714 belowand in contact with semiconductor layer 1004. In some implementations,device layer 1714 includes a third peripheral circuit 1716 and a fourthperipheral circuit 1718. Third peripheral circuit 1716 can include HVcircuits 406, such as driving circuits (e.g., string drivers 704 in rowdecoder/word line driver 308 and drivers in column decoder/bit linedriver 306), and fourth peripheral circuit 1718 can include LV circuits404, such as page buffer circuits (e.g., page buffer circuits 702 inpage buffer 304) and logic circuits (e.g., in control logic 312). Insome implementations, third peripheral circuit 1716 includes a pluralityof transistors 1720, and fourth peripheral circuit 1718 includes aplurality of transistors 1722 as well. Transistors 1720 and 1722 caninclude any transistors disclosed herein, such as planar transistors 500and 3D transistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 1720or 1722 includes a gate dielectric, and the thickness of the gatedielectric of transistor 1720 (e.g., in HV circuit 406) is larger thanthe thickness of the gate dielectric of transistor 1722 (e.g., in LVcircuit 404) due to the higher voltage applied to transistor 1720 thantransistor 1722. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 1720 and 1722) can be formedon or in semiconductor layer 1004 as well.

Moreover, the different voltages applied to different transistors 1720,1722, 1708, and 1710 in second and third semiconductor structures 104and 106 can lead to differences of device dimensions between second andthird semiconductor structures 104 and 106. In some implementations, thethickness of the gate dielectric of transistor 1720 (e.g., in HV circuit406) is larger than the thickness of the gate dielectric of transistor1708 (e.g., in LLV circuit 402) due to the higher voltage applied totransistor 1720 than transistor 1708. In some implementations, thethickness of the gate dielectric of transistor 1722 (e.g., in LV circuit404) is the same as the thickness of the gate dielectric of transistor1710 (e.g., in LV circuit 404) due to the same voltage applied totransistor 1722 and transistor 1710. In some implementations, thethickness of semiconductor layer 1006 in which transistor 1708 (e.g., inLLV circuit 402) is formed is smaller than the thickness ofsemiconductor layer 1004 in which transistor 1720 (e.g., in HV circuit406) is formed due to the lower voltage applied to transistor 1708 thantransistor 1720.

As shown in FIG. 17A, second semiconductor structure 104 can furtherinclude an interconnect layer 1726 below device layer 1714 to transferelectrical signals to and from peripheral circuits 1716 and 1718. Asshown in FIG. 17A, interconnect layer 1726 can be vertically betweenbonding interface 103 and device layer 1714 (including transistors 1720and 1722 of peripheral circuits 1716 and 1718). Interconnect layer 1726can include a plurality of interconnects coupled to transistors 1720 and1722 of peripheral circuits 1716 and 1718 in device layer 1714.Interconnect layer 1726 can further include one or more ILD layers inwhich the interconnects can form. That is, interconnect layer 1126 caninclude lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 1714 are coupled to oneanother through the interconnects in interconnect layer 1726. Forexample, peripheral circuit 1716 may be coupled to peripheral circuit1718 through interconnect layer 1726. The interconnects in interconnectlayer 1726 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 1726 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof. In some implementations,the interconnects in interconnect layer 1726 include W, which has arelatively high thermal budget (compatible with high-temperatureprocesses) and good quality (fewer detects, e.g., voids) amongconductive metal materials.

As shown in FIG. 17A, second semiconductor structure 104 can furtherinclude one or more contacts 1724 extending vertically throughsemiconductor layer 1004. In some implementations, contacts 1724 arecoupled to the interconnects in interconnect layer 1726. In someimplementations, contact 1724 is in contact with contact 1723, such thatcontacts 1723 and 1724 couple the interconnects in interconnect layer1726 to the interconnects in interconnect layer 1712 to make anelectrical connection across bonding interface 105 between second andthird semiconductor structures 104 and 106 and through semiconductorlayers 1004 and 1006. Contact 1724 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, silicides, or anycombination thereof. In some implementations, contact 1724 includes W.In some implementations, contact 1724 includes a via surrounded by adielectric spacer (e.g., having silicon oxide) to electrically separatethe via from semiconductor layer 1004. Depending on the thickness ofsemiconductor layer 1004, contact 1724 can be an ILV having a depth inthe submicron-level (e.g., between 10 nm and 1 μm), or a TSV having adepth in the micron- or tens micron-level (e.g., between 1 μm and 100μm).

As shown in FIG. 17A, second semiconductor structure 104 can furtherinclude a bonding layer 1010 at bonding interface 103 and above and incontact with interconnect layer 1726. Bonding layer 1010 can include aplurality of bonding contacts 1011 and dielectrics electricallyisolating bonding contacts 1011. Bonding contacts 1011 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, bondingcontacts 1011 of bonding layer 1010 include Cu. The remaining area ofbonding layer 1010 can be formed with dielectrics including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof. Bonding contacts 1011 andsurrounding dielectrics in bonding layer 1010 can be used for hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal (e.g., Cu-to-Cu) bonding and dielectric-dielectric(e.g., SiO₂-to-SiO₂) bonding simultaneously.

As shown in FIG. 17A, first semiconductor structure 102 can furtherinclude a bonding layer 1008 at bonding interface 103, e.g., on theopposite side of bonding interface 103 with respect to bonding layer1010 in second semiconductor structure 104. Bonding layer 1008 caninclude a plurality of bonding contacts 1009 and dielectricselectrically isolating bonding contacts 1009. Bonding contacts 1009 caninclude conductive materials, such as Cu. The remaining area of bondinglayer 1008 can be formed with dielectric materials, such as siliconoxide. Bonding contacts 1009 and surrounding dielectrics in bondinglayer 1008 can be used for hybrid bonding. In some implementations,bonding interface 103 is the place at which bonding layers 1008 and 1010are met and bonded. In practice, bonding interface 103 can be a layerwith a certain thickness that includes the top surface of bonding layer1010 of second semiconductor structure 104 and the bottom surface ofbonding layer 1008 of first semiconductor structure 102.

As shown in FIG. 17A, first semiconductor structure 102 can furtherinclude an interconnect layer 1728 below and in contact with bondinglayer 1008 to transfer electrical signals. Interconnect layer 1728 caninclude a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. In some implementations, the interconnects ininterconnect layer 1728 also include local interconnects, such as bitline contacts and word line contacts. Interconnect layer 1728 canfurther include one or more ILD layers in which the lateral lines andvias can form. The interconnects in interconnect layer 1728 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. The ILD layers in interconnectlayer 1728 can include dielectric materials including, but not limitedto, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof.

As shown in FIG. 17A, first semiconductor structure 102 can include amemory cell array, such as an array of NAND memory strings 208 below andin contact with interconnect layer 1728. In some implementations,interconnect layer 1728 is vertically between NAND memory strings 208and bonding interface 103. Each NAND memory string 208 extendsvertically through a plurality of pairs each including a conductivelayer and a dielectric layer, according to some implementations. Thestacked and interleaved conductive layers and dielectric layers are alsoreferred to herein as a stack structure, e.g., a memory stack 1727.Memory stack 1727 may be an example of memory stack 804 in FIGS. 8A-8C,and the conductive layer and dielectric layer in memory stack 1727 maybe examples of gate conductive layers 806 and dielectric layer 808,respectively, in memory stack 804. The interleaved conductive layers anddielectric layers in memory stack 1727 alternate in the verticaldirection, according to some implementations. Each conductive layer caninclude a gate electrode (gate line) surrounded by an adhesive layer anda gate dielectric layer. The gate electrode of the conductive layer canextend laterally as a word line, ending at one or more staircasestructures of memory stack 1727.

In some implementations, each NAND memory string 208 is a “charge trap”type of NAND memory string including any suitable channel structuresdisclosed herein, such as bottom plug channel structure 812A, sidewallplug channel structure 812B, or bottom open channel structure 812C,described above in detail with respect to FIGS. 8A-8C. It is understoodthat NAND memory strings 208 are not limited to the “charge trap” typeof NAND memory strings and may be “floating gate” type of NAND memorystrings in other examples.

As shown in FIG. 17A, first semiconductor structure 102 can furtherinclude semiconductor layer 1002 disposed below memory stack 1727 and incontact with the sources of NAND memory strings 208. In someimplementations, NAND memory strings 208 are disposed vertically betweenbonding interface 103 and semiconductor layer 1002. Semiconductor layer1002 can include semiconductor materials. In some implementations,semiconductor layer 1002 is a thinned silicon substrate having singlecrystalline silicon on which memory stack 1727 and NAND memory strings208 (e.g., including bottom plug channel structure 812A or sidewall plugchannel structure 812B) are formed. It is understood that in someexamples, trench isolations and doped regions (not shown) may be formedin semiconductor layer 1002 as well.

As shown in FIG. 17A, third semiconductor structure 106 can furtherinclude a pad-out interconnect layer 902 above and in contact withinterconnect layer 1712. In some implementations, device layer 1702having transistors 1708 and 1710 is disposed vertically between pad-outinterconnect layer 902 and semiconductor layer 1006. Pad-outinterconnect layer 902 can include interconnects, e.g., contact pads1732, in one or more ILD layers. Pad-out interconnect layer 902 andinterconnect layer 1712 can be formed on the same side of semiconductorlayer 1006. In some implementations, the interconnects in pad-outinterconnect layer 902 can transfer electrical signals between 3D memorydevice 1700 and external devices, e.g., for pad-out purposes.

As a result, peripheral circuits 1704, 1706, 1716, and 1718 in third andsecond semiconductor structures 106 and 104 can be coupled to NANDmemory strings 208 in first semiconductor structure 102 through variousinterconnection structures, including interconnect layers 1712, 1726,and 1728, bonding layers 1008 and 1010, as well as contacts 1723 and1724. Moreover, peripheral circuits 1704, 1706, 1716, and 1718 and NANDmemory strings 208 in 3D memory device 1700 can be further coupled toexternal devices through pad-out interconnect layer 902.

It is understood that in some examples, similar to bonding interface103, bonding interface 105 may result from hybrid bonding and thus, bedisposed vertically between two bonding layers each including bondingcontacts in second and third semiconductor structures 104 and 106,respectively. For example, as shown in FIG. 17B, a 3D memory device 1701may include bonding layers 1012 and 1014 in second and thirdsemiconductor structures 104 and 106, respectively, at bonding interface105, i.e., on opposite sides of bonding interface 105. Bonding layer1012 or 1014 can include a plurality of bonding contacts 1013 or 1015and dielectrics electrically isolating bonding contacts 1013 or 1015.Bonding contacts 1013 and 1015 can include conductive materials, such asCu. The remaining area of bonding layer 1012 or 1014 can be formed withdielectric materials, such as silicon oxide. Bonding contacts 1013 or1015 and surrounding dielectrics in bonding layer 1012 or 1014 can beused for hybrid bonding. In some implementations, bonding interface 105is the place at which bonding layers 1012 and 1014 are met and bonded.In practice, bonding interface 105 can be a layer with a certainthickness that includes the top surface of bonding layer 1014 of thirdsemiconductor structure 106 and the bottom surface of bonding layer 1012of second semiconductor structure 104. Contact 1723 can be coupled tocontact 1724 through bonding contacts 1013 and 1015 of bonding layers1012 and 1014 across bonding interface 105.

It is also understood that the pad-out of 3D memory devices is notlimited to from third semiconductor structure 106 having transistors1708 and 1710 as shown in FIG. 17A (corresponding to FIG. 9A) and may befrom first semiconductor structure 102 having NAND memory strings 208(corresponding to FIG. 9B). For example, as shown in FIG. 17B, 3D memorydevice 1701 may include pad-out interconnect layer 902 in firstsemiconductor structure 102. Pad-out interconnect layer 902 can be incontact with semiconductor layer 1002 of first semiconductor structure102 on which NAND memory strings 208 are formed. In someimplementations, first semiconductor structure 102 further includes oneor more contacts 1730 extending vertically through semiconductor layer1002. In some implementations, contact 1730 couples the interconnects ininterconnect layer 1728 in first semiconductor structure 102 to contactpads 1732 in pad-out interconnect layer 902 to make an electricalconnection through semiconductor layer 1002. Contact 1730 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, contact1730 includes W. In some implementations, contact 1730 includes a viasurrounded by a dielectric spacer (e.g., having silicon oxide) toelectrically separate the via from semiconductor layer 1002. Dependingon the thickness of semiconductor layer 1002, contact 1730 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm). In some implementations, in FIG. 17B, thirdsemiconductor structure 106 of 3D memory device 1701 further includes apassivation layer 1734, replacing pad-out interconnect layer 902 in FIG.17B. Passivation layer 1734 can include dielectric materials, such assilicon nitride and/or silicon oxide. It is understood that the detailsof the same components (e.g., materials, fabrication process, functions,etc.) in both 3D memory devices 1700 and 1701 are not repeated for easeof description.

It is further understood that the material of semiconductor layer 1002in first semiconductor structure 102 is not limited to singlecrystalline silicon as described above with respect to FIGS. 17A and 17Band may be any other suitable semiconductor materials. For example, asshown in FIG. 17C, a 3D memory device 1703 may include semiconductorlayer 1002 having polysilicon in first semiconductor structure 102. NANDmemory strings 208 of 3D memory device 1703 in contact withsemiconductor layer 1002 having polysilicon can include any suitablechannel structures disclosed herein that are in contact with apolysilicon layer, such as bottom open channel structure 812C. In someimplementations, NAND memory strings 208 of 3D memory device 1703 are“floating gate” type of NAND memory strings, and semiconductor layer1002 having polysilicon is in contact with the “floating gate” type ofNAND memory strings as the source plate thereof. It is understood thatthe details of the same components (e.g., materials, fabricationprocess, functions, etc.) in both 3D memory devices 1700 and 1703 arenot repeated for ease of description.

FIGS. 18A-18F illustrate a fabrication process for forming the 3D memorydevices in FIGS. 16A and 16B, according to some aspects of the presentdisclosure. FIG. 20 illustrates a flowchart of a method 2000 for formingthe 3D memory devices in FIGS. 16A and 16B, according to some aspects ofthe present disclosure. Examples of the 3D memory devices depicted inFIGS. 18A-18F and 20 include 3D memory devices 1700, 1701, and 1703depicted in FIGS. 17A-17C. FIGS. 18A-18F and 20 will be describedtogether. It is understood that the operations shown in method 2000 arenot exhaustive and that other operations can be performed as wellbefore, after, or between any of the illustrated operations. Further,some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 20 . In one example, operation 2002may be performed after operation 2008 or in parallel with operations2004-2008. In another example, operation 2010 may be performed beforeoperations 2006 and 2008.

Referring to FIG. 20 , method 2000 starts at operation 2002, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 18D, a stack structure, such as a memory stack1826 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 1824. To form memory stack 1826, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 1824. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 1826 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 1826 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 1826 and silicon substrate 1824.

As illustrated in FIG. 18D, NAND memory strings 1828 are formed abovesilicon substrate 1824, each of which extends vertically through memorystack 1826 to be in contact with silicon substrate 1824. In someimplementations, fabrication processes to form NAND memory string 1828include forming a channel hole through memory stack 1826 (or thedielectric stack) and into silicon substrate 1824 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 1828 may vary depending on the typesof channel structures of NAND memory strings 1828 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 18D, an interconnect layer 1830 is formedabove memory stack 1826 and NAND memory strings 1828. Interconnect layer1830 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 1828. Insome implementations, interconnect layer 1830 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 1830 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, chemicalmechanical polishing (CMP), wet/dry etch, or any other suitableprocesses. The ILD layers can include dielectric materials deposited byone or more thin film deposition processes including, but not limitedto, CVD, PVD, ALD, or any combination thereof. The ILD layers andinterconnects illustrated in FIG. 18D can be collectively referred to asinterconnect layer 1830.

In some implementations, a first bonding layer is formed aboveinterconnect layer. The first bonding layer can include a plurality offirst bonding contacts. As illustrated in FIG. 18D, a bonding layer 1832is formed above interconnect layer 1830. Bonding layer 1832 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 1830 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1830by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 2000 proceeds to operation 2004, as illustrated in FIG. 20 , inwhich a first transistor is formed on a first side (e.g., a firstsurface) of a second substrate. The second substrate can be a siliconsubstrate having single crystalline silicon. The first side can be thefront side on which devices are formed on the second substrate.

As illustrated in FIG. 18A, a plurality of transistors 1804 and 1806 areformed on the front side of a silicon substrate 1802. Transistors 1804and 1806 can be formed by a plurality of processes including, but notlimited to, photolithography, dry/wet etch, thin film deposition,thermal growth, implantation, CMP, and any other suitable processes. Insome implementations, doped regions are formed in silicon substrate 1802by ion implantation and/or thermal diffusion, which function, forexample, as wells and source/drain regions of transistors 1804 and 1806.In some implementations, isolation regions (e.g., STIs) are also formedin silicon substrate 1802 by wet/dry etch and thin film deposition. Insome implementations, the thickness of gate dielectric of transistor1804 is different from the thickness of gate dielectric of transistor1806, for example, by depositing a thicker silicon oxide film in theregion of transistor 1804 than the region of transistor 1806, or byetching back part of the silicon oxide film deposited in the region oftransistor 1806. It is understood that the details of fabricatingtransistors 1804 and 1806 may vary depending on the types of thetransistors (e.g., planar transistors 500 or 3D transistors 600 in FIGS.5A, 5B, 6A, and 6B) and thus, are not elaborated for ease ofdescription.

In some implementations, an interconnect layer 1808 is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 18A, an interconnect layer 1808 can be formed above transistors1804 and 1806. Interconnect layer 1808 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 1804 and 1806. In some implementations, interconnectlayer 1808 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 1808 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 18A can be collectively referred to as interconnectlayer 1808. In some implementations, the interconnects in interconnectlayer 1808 include W, which has a relatively high thermal budget amongconductive metal materials to sustain later high-temperature processes.

In some implementations, a second bonding layer is formed above theinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIG. 18A, a bonding layer1822 is formed above interconnect layer 1808. Bonding layer 1822 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 1808 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1808by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 2000 proceeds to operation 2006, as illustrated in FIG. 20 , inwhich a semiconductor layer is formed on a second side (e.g., a secondsurface) of the second substrate opposite to the first side. Thesemiconductor layer can include single crystalline silicon. The secondside can be the backside of the second substrate. In someimplementations, to form the semiconductor layer, another substrate andthe second substrate are bonded in a face-to-back manner, and the othersubstrate is thinned to leave the semiconductor layer. The bonding caninclude transfer bonding. The other substrate can be a silicon substratehaving single crystalline silicon.

In some implementations, the second substrate is thinned prior toforming the semiconductor layer, such that the semiconductor layer isformed on the second side of the thinned second substrate. Asillustrated in FIG. 18B, silicon substrate 1802 (shown in FIG. 18A) isthinned to become a semiconductor layer 1809 having single crystallinesilicon. Silicon substrate 1802 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof. In some implementations,as shown in FIG. 18BD, a handle substrate 1801 (a.k.a., carrier wafer)is attached to bonding layer 1822, for example, using adhesive bonding,prior to the thinning to allow the subsequent backside processes onsilicon substrate 1802, such as thinning, contact formation, andbonding.

In some implementations, a first contact through the thinned secondsubstrate is formed. As illustrated in FIG. 18B, one or more contacts1817 each extending vertically through semiconductor layer 1809 (i.e.,the thinned silicon substrate 1802) are formed. Contacts 1817 can becoupled to the interconnects in interconnect layer 1808. Contacts 1817can be formed by first patterning contact holes through semiconductorlayer 1809 using patterning process (e.g., photolithography and dry/wetetch of dielectric materials in the dielectric layer). The contact holescan be filled with a conductor (e.g., W or Cu). In some implementations,filling the contact holes includes depositing a spacer (e.g., a siliconoxide layer) before depositing the conductor. It is understood that insome examples, contacts 1817 may be formed in silicon substrate 1802before thinning (the formation of semiconductor layer 1809, e.g., inFIG. 18A) and be exposed from the backside of silicon substrate 1802(where the thinning occurs) after the thinning.

As illustrated in FIG. 18B, a semiconductor layer 1810, such as a singlecrystalline silicon layer, is formed on the backside (the side where thethinning occurs) of semiconductor layer 1809 (i.e., the thinned siliconsubstrate 1802). Semiconductor layer 1810 can be attached to thebackside of semiconductor layer 1810 to form a bonding interface 1812vertically between semiconductor layer 1810 and semiconductor layer1809. In some implementations, to form semiconductor layer 1810, anothersilicon substrate (not shown in FIG. 18B) and semiconductor layer 1809(i.e., the thinned silicon substrate 1802) are bonded in a face-to-backmanner (flipping thinned silicon substrate 1802 upside down and havingthe components formed on silicon substrate 1802, such as transistors1804 and 1806, facing away from the other silicon substrate) usingtransfer bonding, thereby forming bonding interface 1812. The othersilicon substrate can then be thinned using any suitable processes toleave semiconductor layer 1810 attached to the backside of semiconductorlayer 1809 (i.e., the thinned silicon substrate 1802). The details ofvarious transfer bonding processes are described above with respect toFIGS. 48A-48D and FIGS. 49A-49D and thus, are not repeated for ease ofdescription.

Referring to FIG. 20 , method 2000 proceeds to operation 2008, in whicha second transistor is formed on the semiconductor layer. As illustratedin FIG. 18C, a plurality of transistors 1814 and 1816 are formed onsemiconductor layer 1810 having single crystalline silicon. Transistors1814 and 1816 can be formed by a plurality of processes including, butnot limited to, photolithography, dry/wet etch, thin film deposition,thermal growth, implantation, CMP, and any other suitable processes. Insome implementations, doped regions are formed in semiconductor layer1810 by ion implantation and/or thermal diffusion, which function, forexample, as wells and source/drain regions of transistors 1814 and 1816.In some implementations, isolation regions (e.g., STIs) are also formedin semiconductor layer 1810 by wet/dry etch and thin film deposition. Insome implementations, the thickness of gate dielectric of transistor1814 is different from the thickness of gate dielectric of transistor1816, for example, by depositing a thicker silicon oxide film in theregion of transistor 1814 than the region of transistor 1816, or byetching back part of the silicon oxide film deposited in the region oftransistor 1816. It is understood that the details of fabricatingtransistors 1814 and 1816 may vary depending on the types of thetransistors (e.g., planar transistors 500 or 3D transistors 600 in FIGS.5A, 5B, 6A, and 6B) and thus, are not elaborated for ease ofdescription.

In some implementations, an interconnect layer 1820 is formed above thetransistor on the semiconductor layer. The interconnect layer caninclude a plurality of interconnects in one or more ILD layers. Asillustrated in FIG. 18C, an interconnect layer 1820 can be formed abovetransistors 1814 and 1816. Interconnect layer 1820 can includeinterconnects of MEOL and/or BEOL in a plurality of ILD layers to makeelectrical connections with transistors 1814 and 1816. In someimplementations, interconnect layer 1820 includes multiple ILD layersand interconnects therein formed in multiple processes. For example, theinterconnects in interconnect layer 1820 can include conductivematerials deposited by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 18C can be collectively referred to as interconnect layer 1820.Different from interconnect layer 1808, in some implementations, theinterconnects in interconnect layer 1820 include Cu, which has arelatively low resistivity among conductive metal materials. It isunderstood that although Cu has a relatively low thermal budget(incompatible with high-temperature processes), using Cu as theconductive materials of the interconnects in interconnect layer 1820 maybecome feasible since there is no more high temperature processes afterthe fabrication of interconnect layer 1820.

In some implementations, a second contact through the semiconductorlayer and coupled to the first contact is formed. As illustrated in FIG.18C, one or more contacts 1818 each extending vertically throughsemiconductor layer 1810 are formed. Contact 1818 can be aligned to bein contact with contact 1817 at bonding interface 1812. Contacts 1818and 1817 can couple the interconnects in interconnect layers 1820 and1808 across bonding interface 1812 and through semiconductor layers 1810and 1809. Contacts 1818 can be formed by first patterning contact holesthrough semiconductor layer 1810 and aligned with contacts 1817 atbonding interface 1812 using patterning process (e.g., photolithographyand dry/wet etch of dielectric materials in the dielectric layer). Thecontact holes can be filled with a conductor (e.g., W or Cu). In someimplementations, filling the contact holes includes depositing a spacer(e.g., a silicon oxide layer) before depositing the conductor.

Method 2000 proceeds to operation 2010, as illustrated in FIG. 20 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner. The first bonding contact in the first bondinglayer can be in contact with the second bonding contact in the secondbonding layer at a bonding interface after bonding the first and secondsubstrates. The bonding can include hybrid bonding.

As illustrated in FIG. 18E, after removing handle substrate 1801 (e.g.,shown in FIG. 18C) to expose bonding layer 1822, thinned siliconsubstrate 1802 (i.e., semiconductor layer 1809) and components formedthereon (e.g., transistors 1804 and 1806) are flipped upside down.Bonding layer 1822 facing down is bonded with bonding layer 1832 facingup, i.e., in a face-to-face manner, thereby forming a bonding interface1834. That is, thinned silicon substrate 1802 and components formedthereon can be bonded with silicon substrate 1824 and components formedthereon in a face-to-face manner, such that the bonding contacts inbonding layer 1822 are in contact with the bonding contacts in bondinglayer 1832 at bonding interface 1834. Transistors 1806 and 1804 and NANDmemory strings 1828 can face toward each other after the bonding. Insome implementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 18E, it is understood that insome examples, silicon substrate 1824 and components formed thereon(e.g., memory stack 1826 and NAND memory strings 1828) can be flippedupside down, and bonding layer 1832 facing down can be bonded withbonding layer 1822 facing up, i.e., in a face-to-face manner, therebyforming bonding interface 1834 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 1834 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 1832 and the bondingcontacts in bonding layer 1822 are aligned and in contact with oneanother, such that memory stack 1826 and NAND memory strings 1828 formedtherethrough can be coupled to transistors 1814, 1816, 1804, and 1806through the bonded bonding contacts across bonding interface 1834,according to some implementations. It is understood that in someexamples, a bonding layer may be formed above interconnect layer 1820,instead of interconnect layer 1808, and thinned silicon substrate 1802and components formed thereon can be bonded with silicon substrate 1824and components formed thereon in a back-to-face manner, such thattransistors 1816 and 1814 and NAND memory strings 1828 may face towardeach other after the bonding.

It is understood that in some examples, operation 2010 may be performedbefore operations 2006 and 2008. That is, after the formation of thearray of NAND memory strings on the first substrate at operation 2002and the formation of the first transistor on the first side of thesecond substrate at operation 2004 (operations 2002 and 2004 may beperformed in parallel), method 2000 may proceed to operation 2010 tobond the first and second substrates in a face-to-face matter. Method2000 then may proceed to operation 2006 to form the semiconductor layeron the second side of the second substrate and operation 2008 to formthe second transistor on the semiconductor layer. Accordingly, since thebonded first substrate (e.g., silicon substrate 1824 in FIG. 18D) canserve as the base substrate when performing operations 2006 and 2008,the attachment of the handle substrate (e.g., handle substrate 1801 inFIG. 18B) may not be needed to simplify the process.

Method 2000 skips optional operation 2012 and proceeds to operation2014, as illustrated in FIG. 20 , in which a pad-out interconnect layeris formed. The pad-out interconnect layer can be formed above the secondtransistor. As illustrated in FIG. 18F, a pad-out interconnect layer1836 is formed above interconnect layer 1820 and transistors 1814 and1816 on semiconductor layer 1810. Pad-out interconnect layer 1836 caninclude interconnects, such as contact pads 1838, formed in one or moreILD layers. Contact pads 1838 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, doped silicon, silicides,or any combination thereof. The ILD layers can include dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof.

In some implementations, to form a pad-out interconnect layer on thefirst substrate, after operation 2010, method 2000 proceeds to optionaloperation 2012, as illustrated in FIG. 20 , in which the first substrateis thinned. It is understood that although not shown, in some examples,silicon substrate 1824 (shown in FIG. 18E) may be thinned to become asemiconductor layer having single crystalline silicon using processesincluding, but not limited to, wafer grinding, dry etch, wet etch, CMP,any other suitable processes, or any combination thereof. After thethinning, contacts may be formed extending vertically through thethinned silicon substrate 1824, for example, by wet/dry etching followedby depositing dielectric materials as spacers and conductive materialsas conductors. It is understood that in some examples, the contacts maybe formed in silicon substrate 1824 before thinning and be exposed fromthe backside of silicon substrate 1824 (where the thinning occurs) afterthe thinning.

Method 2000 proceeds to operation 2014, as illustrated in FIG. 20 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned first substrate. It is understoodthat although not shown, in some examples, a pad-out interconnect layerhaving contact pads may be formed on the thinned silicon substrate 1824.

FIGS. 19A-19F illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 16A and 16B, according to some aspects of thepresent disclosure. FIG. 21 illustrates a flowchart of another method2100 for forming the 3D memory devices in FIG. 16A and 16B, according tosome aspects of the present disclosure. Examples of the 3D memorydevices depicted in FIGS. 19A-19F and 21 include 3D memory devices 1700,1701, and 1703 depicted in FIGS. 17A-17C. FIGS. 19A-19F and 21 will bedescribed together. It is understood that the operations shown in method2100 are not exhaustive and that other operations can be performed aswell before, after, or between any of the illustrated operations.Further, some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 21 . In one example, operation 2102,2104, and 2106 may be performed in parallel. In another example,operation 2110 may be performed before operation 2108.

Referring to FIG. 21 , method 2100 starts at operation 2102, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 19A, a stack structure, such as a memory stack1904 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 1902. To form memory stack 1904, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 1902. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 1904 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 1904 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 1904 and silicon substrate 1902.

As illustrated in FIG. 19A, NAND memory strings 1906 are formed abovesilicon substrate 1902, each of which extends vertically through memorystack 1904 to be in contact with silicon substrate 1902. In someimplementations, fabrication processes to form NAND memory string 1906include forming a channel hole through memory stack 1904 (or thedielectric stack) and into silicon substrate 1902 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 1906 may vary depending on the typesof channel structures of NAND memory strings 1906 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 19A, an interconnect layer 1908 is formedabove memory stack 1904 and NAND memory strings 1906. Interconnect layer1908 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 1906. Insome implementations, interconnect layer 1908 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 1908 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 19A can be collectively referred to as interconnect layer 1908.

In some implementations, a first bonding layer is formed aboveinterconnect layer. The first bonding layer can include a plurality offirst bonding contacts. As illustrated in FIG. 19A, a bonding layer 1910is formed above interconnect layer 1308. Bonding layer 1910 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 1908 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1908by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 2100 proceeds to operation 2104, as illustrated in FIG. 21 , inwhich a first transistor is formed on a second substrate. The secondsubstrate can be a silicon substrate having single crystalline silicon.As illustrated in FIG. 19B, a plurality of transistors 1914 and 1916 areformed on a silicon substrate 1912. Transistors 1914 and 1916 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 1912 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 1914 and 1916. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 1912 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 1914 isdifferent from the thickness of gate dielectric of transistor 1916, forexample, by depositing a thicker silicon oxide film in the region oftransistor 1914 than the region of transistor 1916, or by etching backpart of the silicon oxide film deposited in the region of transistor1916. It is understood that the details of fabricating transistors 1914and 1916 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 1918 is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 19B, an interconnect layer 1918 can be formed above transistors1914 and 1916. Interconnect layer 1918 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 1914 and 1916. In some implementations, interconnectlayer 1918 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 1918 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 19B can be collectively referred to as interconnectlayer 1918.

In some implementations, a second bonding layer is formed aboveinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIG. 19B, a bonding layer1920 is formed above interconnect layer 1918. Bonding layer 1920 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 1918 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 1918by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 2100 proceeds to operation 2106, as illustrated in FIG. 21 , inwhich a second transistor is formed on a third substrate. The thirdsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, any two or all of operations 2102, 2104, and2106 are performed in parallel to reduce process time.

As illustrated in FIG. 19C, a plurality of transistors 1924 and 1926 areformed on a silicon substrate 1922. Transistors 1924 and 1926 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 1922 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 1924 and 1926. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 1922 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 1924 isdifferent from the thickness of gate dielectric of transistor 1926, forexample, by depositing a thicker silicon oxide film in the region oftransistor 1924 than the region of transistor 1926, or by etching backpart of the silicon oxide film deposited in the region of transistor1926. It is understood that the details of fabricating transistors 1924and 1926 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 1928 is formed above thetransistor on the third substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 19C, an interconnect layer 1928 can be formed above transistors1924 and 1926. Interconnect layer 1928 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 1924 and 1926. In some implementations, interconnectlayer 1928 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 1928 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 19C can be collectively referred to as interconnectlayer 1928.

In some implementations, at least one of the second substrate or thethird substrate is thinned. As illustrated in FIG. 19D, siliconsubstrate 1912 (shown in FIG. 19B) is thinned to become a semiconductorlayer 1935 having single crystalline silicon. Similarly, siliconsubstrate 1922 (shown in FIG. 19C) is thinned to become a semiconductorlayer 1923 having single crystalline silicon. Silicon substrate 1912 or1922 can be thinned by processes including, but not limited to, wafergrinding, dry etch, wet etch, CMP, any other suitable processes, or anycombination thereof. In some implementations, as shown in FIG. 19D, ahandle substrate 1901 is attached to bonding layer 1920, and a handlesubstrate 1903 is attached to interconnect layer 1928, for example,using adhesive bonding, prior to the thinning to allow the subsequentbackside processes on silicon substrates 1912 and 1922, such asthinning, contact formation, and bonding.

In some implementations, a first contact through the thinned secondsubstrate is formed. In some implementations, a second contact throughthe thinned third substrate is formed, such that the second contact iscoupled to the first contact after bonding the thinned third and secondsubstrates. As illustrated in FIG. 19D, one or more contacts 1936 eachextending vertically through semiconductor layer 1935 (i.e., the thinnedsilicon substrate 1912) are formed. Contacts 1936 can be coupled to theinterconnects in interconnect layer 1918. Similarly, one or morecontacts 1937 each extending vertically through semiconductor layer 1923(i.e., the thinned silicon substrate 1922) are formed. Contacts 1937 canbe coupled to the interconnects in interconnect layer 1928. Contact 1937or 1936 can be formed by first patterning contact holes throughsemiconductor layer 1923 or 1935 using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor. It is understood that in some examples,contacts 1936 may be formed in silicon substrate 1912 before thinning(the formation of semiconductor layer 1935, e.g., in FIG. 19B) and beexposed from the backside of silicon substrate 1912 (where the thinningoccurs) after the thinning. Similarly, contacts 1937 may be formed insilicon substrate 1922 before thinning (the formation of semiconductorlayer 1923, e.g., in FIG. 19C) and be exposed from the backside ofsilicon substrate 1922 (where the thinning occurs) after the thinning.

In some implementations, a third bonding layer is formed on a secondside of the thinned second substrate opposite to a first side on whichthe transistor is formed, and a fourth bonding layer is formed on asecond side of the thinned third substrate opposite to a first side onwhich the transistor is formed. The third bonding layer can include aplurality of third bonding contacts, and the fourth bonding layer caninclude a plurality of fourth bonding contacts. As illustrated in FIG.19D, a bonding layer 1939 is formed on the backside of semiconductorlayer 1935 (i.e., the thinned silicon substrate 1912), and a bondinglayer 1941 is formed on the backside of semiconductor layer 1923 (i.e.,the thinned silicon substrate 1922). Bonding layer 1939 or 1941 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the surface ofsemiconductor layer 1935 or 1923 by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The bonding contacts can then be formed through thedielectric layer and in contact with contacts 1936 and 1937 by firstpatterning contact holes through the dielectric layer using patterningprocess (e.g., photolithography and dry/wet etch of dielectric materialsin the dielectric layer). The contact holes can be filled with aconductor (e.g., Cu). In some implementations, filling the contact holesincludes depositing an adhesion (glue) layer, a barrier layer, and/or aseed layer before depositing the conductor.

Method 2100 proceeds to operation 2108, as illustrated in FIG. 21 , inwhich the third substrate and the second substrate are bonded in aback-to-back manner. The third bonding contact in the third bondinglayer can be in contact with the fourth bonding contact in the fourthbonding layer at a first bonding interface after bonding the third andsecond substrates. The bonding can include hybrid bonding.

As illustrated in FIG. 19D, thinned silicon substrate 1922 (i.e.,semiconductor layer 1923) and components formed thereon (e.g.,transistors 1924 and 1926) are flipped upside down. Bonding layer 1941on the backside of thinned silicon substrate 1922 facing up is bondedwith bonding layer 1939 on the backside of thinned silicon substrate1912 facing down, i.e., in a back-to-back manner, thereby forming abonding interface 1940. That is, thinned silicon substrate 1922 andcomponents formed thereon can be bonded with thinned silicon substrate1912 and components formed thereon in a back-to-back manner, such thatthe bonding contacts in bonding layer 1941 are in contact with thebonding contacts in bonding layer 1939 at bonding interface 1940. Insome implementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 13D, it is understood that insome examples, thinned silicon substrate 1912 and components formedthereon (e.g., transistors 1914 and 1916) can be flipped upside down,and bonding layer 1939 facing up can be bonded with bonding layer 1941facing down, i.e., in a back-to-back manner, thereby forming bondinginterface 1940 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 1940 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 1939 and the bondingcontacts in bonding layer 1941 are aligned and in contact with oneanother, such that contacts 1936 can be coupled to contacts 1937, andtransistors 1924 and 1926 can be coupled to transistors 1914 and 1916through the bonded bonding contacts across bonding interface 1940 andcontacts 1936 and 1937, according to some implementations. It isunderstood that in some examples, anodic bonding or fusion bonding,instead of hybrid bonding, may be performed to bond thinned siliconsubstrates 1912 and 1922 (and components formed thereon) at bondinginterface 1940 in a back-to-back manner without bonding contacts inbonding layer 1939 and/or bonding layer 1941.

Method 2100 proceeds to operation 2110, as illustrated in FIG. 21 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner. The first bonding contact in the first bondinglayer can be in contact with the second bonding contact in the secondbonding layer at a first bonding interface after bonding the first andsecond substrates. The bonding can include hybrid bonding.

As illustrated in FIG. 19E, handle substrate 1901 (shown in FIG. 19D)attached to bonding layer 1920 is removed and expose bonding layer 1920,and silicon substrate 1902 and components formed thereon (e.g., memorystack 1904 and NAND memory strings 1906 formed therethrough) are flippedupside down. Bonding layer 1910 facing down is bonded with bonding layer1920 facing up, i.e., in a face-to-face manner, thereby forming abonding interface 1932. That is, silicon substrate 1902 and componentsformed thereon can be bonded with thinned silicon substrate 1912 (i.e.,semiconductor layer 1935) and components formed thereon in aface-to-face manner, such that the bonding contacts in bonding layer1910 are in contact with the bonding contacts in bonding layer 1920 atbonding interface 1932. Transistors 1914 and 1916 and NAND memorystrings 1906 can face toward each other after the bonding. In someimplementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 19E, it is understood that insome examples, thinned silicon substrate 1912 and components formedthereon (e.g., transistors 1914 and 1916) can be flipped upside down,and bonding layer 1920 facing down can be bonded with bonding layer 1910facing up, i.e., in a face-to-face manner, thereby forming bondinginterface 1932 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 1932 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 1910 and the bondingcontacts in bonding layer 1920 are aligned and in contact with oneanother, such that memory stack 1904 and NAND memory strings 1906 formedtherethrough can be coupled to transistors 1914 and 1916 through thebonded bonding contacts across bonding interface 1932, according to someimplementations. It is understood that in some examples, a bonding layermay be formed above interconnect layer 1928, instead of interconnectlayer 1918, and thinned silicon substrate 1922 (i.e., semiconductorlayer 1923) and components formed thereon can be bonded with siliconsubstrate 1902 and components formed thereon in a face-to-face manner,such that transistors 1926 and 1924 and NAND memory strings 1906 mayface toward each other after the bonding.

It is understood that in some examples, operation 2110 may be performedbefore operation 2108. That is, after the formation of the array of NANDmemory strings on the first substrate at operation 2102, the formationof the first transistor on the second substrate at operation 2104, andthe formation of the second transistor on the third substrate atoperation 2106 (operations 2102, 2104, and 2106 may be performed inparallel), method 2100 may perform operation 2110 to bond the first andsecond substrates in a face-to-face matter. Method 2100 then may proceedto operation 2108 to bond the third and second substrates in aback-to-back manner. Accordingly, since the bonded first substrate(e.g., silicon substrate 1902 in FIG. 19A) can serve as the basesubstrate when performing operation 2108, the attachment of the carriersubstrate (e.g., carrier substrate 1901 in FIG. 19D) can be skipped tosimplify the process.

Method 2100 proceeds to optional operation 2112, as illustrated in FIG.21 , in which the first substrate is thinned. As illustrated in FIG.19F, silicon substrate 1902 (shown in FIG. 19E) is thinned to become asemiconductor layer 1934 having single crystalline silicon. Siliconsubstrate 1902 can be thinned by processes including, but not limitedto, wafer grinding, dry etch, wet etch, CMP, any other suitableprocesses, or any combination thereof.

Method 2100 proceeds to operation 2114, as illustrated in FIG. 21 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned first substrate. As illustrated inFIG. 19F, a pad-out interconnect layer 1948 is formed on semiconductorlayer 1934 (the thinned silicon substrate 1902). Pad-out interconnectlayer 1948 can include interconnects, such as contact pads 1938, formedin one or more ILD layers. Contact pads 1938 can include conductivematerials including, but not limited to, W, Co, Cu, Al, doped silicon,silicides, or any combination thereof. The ILD layers can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some implementations, after the bonding andthinning, contacts 1944 are formed extending vertically throughsemiconductor layer 1934, for example, by wet/dry etching followed bydepositing dielectric materials as spacers and conductive materials asconductors. Contacts 1944 can couple contact pads 1938 in pad-outinterconnect layer 1948 to the interconnects in interconnect layer 1908.In some implementations, handle substrate 1903 (e.g., shown in FIG. 19E)attached to interconnect layer 1928 is removed to expose interconnectlayer 1928, and a passivation layer 1942 is then formed on interconnectlayer 1928 by depositing dielectric materials, such as silicon nitride,using one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof. It is understoodthat in some examples, contacts 1944 may be formed in silicon substrate1902 before thinning (the formation of semiconductor layer 1934, e.g.,in FIG. 19A) and be exposed from the backside of silicon substrate 1902(where the thinning occurs) after the thinning.

In some implementations, after operation 2110, optional operation 2112is skipped, and method 2100 proceeds to operation 2114, as illustratedin FIG. 21 , in which a pad-out interconnect layer is formed. Thepad-out interconnect layer can be formed above the second transistor.Although not shown in FIG. 19F, it is understood that in some examples,a pad-out interconnect layer having contact pads may be formed aboveinterconnect layer 1908 and transistors 1926 and 1924 after removinghandle substrate 1903. It is further understood that in some examples,the first substrate (e.g., silicon substrate 1902 or semiconductor layer1934 after thinning) may be removed and replaced with a semiconductorlayer having polysilicon in a similar manner as described above withrespect to FIGS. 12G and 12H.

FIGS. 22A and 22B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 9A and 9B, according to various aspects of thepresent disclosure. 3D memory devices 2200 and 2201 may be examples of3D memory devices 900 and 901 in FIGS. 9A and 9B. As shown in FIG. 22A,3D memory device 2200 can include stacked first, second, and thirdsemiconductor structures 102, 104, and 106. In some implementations,first semiconductor structure 102 on one side of 3D memory device 2200includes semiconductor layer 1002 and a memory cell array verticallybetween semiconductor layer 1002 and bonding interface 103. The memorycell array can include an array of NAND memory strings (e.g., NANDmemory strings 208 disclosed herein), and the sources of the array ofNAND memory strings can be in contact with semiconductor layer 1002(e.g., as shown in FIGS. 8A-8C). Semiconductor layer 1002 can includesemiconductor materials, such as single crystalline silicon (e.g., asilicon substrate or a thinned silicon substrate) or polysilicon (e.g.,a deposited layer), for example, depending on the types of channelstructures of the NAND memory strings (e.g., bottom plug channelstructure 812A, sidewall plug channel structure 812B, or bottom openchannel structure 812C).

In some implementations, second semiconductor structure 104 in theintermediate of 3D memory device 2200 includes a semiconductor layer1004, a bonding layer 1012, and some of the peripheral circuits of thememory cell array that are vertically between semiconductor layer 1004and bonding layer 1012. In some implementations, semiconductor layer1004 is disposed vertically between bonding interface 103 and theperipheral circuits of second semiconductor structure 104. Thetransistors (e.g., planar transistors 500 and 3D transistors 600) of theperipheral circuits can be in contact with semiconductor layer 1004.Semiconductor layer 1004 can include semiconductor materials, such assingle crystalline silicon (e.g., a layer transferred from a siliconsubstrate or an SOI substrate). It is understood that in some examples,different from semiconductor layer 1002 in first semiconductor structure102, semiconductor layer 1004 on which the transistors are formed mayinclude single crystalline silicon, but not polysilicon, due to thesuperior carrier mobility of single crystalline silicon that isdesirable for transistors' performance. Bonding interface 103 betweenfirst and second semiconductor structures 102 and 104 may result fromtransfer bonding. Through contacts (e.g., ILVs/TSVs) across bondinginterface 103 and through semiconductor layer 1004 vertically betweenfirst and second semiconductor structures 102 and 104 can make direct,short-distance (e.g., submicron-level) electrical connections betweenadjacent semiconductor structures 102 and 104. Bonding layer 1012 caninclude conductive bonding contacts (not shown) and dielectricselectrically isolating the bonding contacts, which can be used, forexample, for hybrid bonding.

In some implementations, third semiconductor structure 106 on anotherside of 3D memory device 2200 includes a semiconductor layer 1006, abonding layer 1014, and some of the peripheral circuits of the memorycell array that are vertically between semiconductor layer 1006 andbonding interface 105. The transistors (e.g., planar transistors 500 and3D transistors 600) of the peripheral circuits can be in contact withsemiconductor layer 1006. Semiconductor layer 1006 can includesemiconductor materials, such as single crystalline silicon (e.g., asilicon substrate or a thinned silicon substrate). It is understood thatin some examples, different from semiconductor layer 1002 in firstsemiconductor structure 102, semiconductor layer 1006 on which thetransistors are formed may include single crystalline silicon, but notpolysilicon, due to the superior carrier mobility of single crystallinesilicon that is desirable for transistors' performance. Similar tobonding layer 1012, bonding layer 1014 can also include conductivebonding contacts (not shown) and dielectrics electrically isolating thebonding contacts, which can be used, for example, for hybrid bonding.Bonding interface 105 is vertically between and in contact with bondinglayers 1012 and 1014, respectively, according to some implementations.That is, bonding layers 1012 and 1014 can be disposed on opposite sidesof bonding interface 105, and the bonding contacts of bonding layer 1012can be in contact with the bonding contacts of bonding layer 1014 atbonding interface 105. As a result, a large number (e.g., millions) ofbonding contacts across bonding interface 105 can make direct,short-distance (e.g., micron-level) electrical connections betweenadjacent semiconductor structures 102 and 104.

It is understood that in some examples, first and second semiconductorstructures 102 and 104 may also include bonding layers 1008 and 1010,respectively, disposed on opposite sides of bonding interface 103, asshown in FIG. 22B. In FIG. 22B, second semiconductor structure 104 of a3D memory device 2201 can include two bonding layers 1010 and 1012 ontwo sides thereof, and bonding layer 1010 can be disposed verticallybetween semiconductor layer 1004 and bonding interface 103. Firstsemiconductor structure 102 of 3D memory device 2201 can include bondinglayer 1008 disposed vertically between bonding interface 103 andsemiconductor layer 1002. Each bonding layer 1008 or 1010 can includeconductive bonding contacts (not shown) and dielectrics electricallyisolating the bonding contacts. The bonding contacts of bonding layer1008 can be in contact with the bonding contacts of bonding layer 1010at bonding interface 103. As a result, bonding contacts across bondinginterface 103 in conjunction with through contacts (e.g., ILVs/TSVs)through semiconductor layer 1004 can make direct, short-distance (e.g.,micron-level) electrical connections between adjacent semiconductorstructures 102 and 104.

As shown in FIGS. 22A and 22B, since third and second semiconductorstructures 106 and 104 are bonded in a face-to-face manner (e.g.,semiconductor layer 1006 being disposed on the bottom side of thirdsemiconductor structure 106, while semiconductor layer 1004 beingdisposed on the top side of second semiconductor structure 104 in FIGS.22A and 22B), the transistors in third semiconductor structure 106 andthe transistors in second semiconductor structure 104 face toward eachother, according to some implementations. In some implementations,semiconductor layer 1004 is disposed vertically between the transistorsof the peripheral circuits in second semiconductor structure 104 andbonding interface 103, and the transistors of the peripheral circuits inthird semiconductor structure 106 are disposed vertically betweenbonding interface 105 and semiconductor layer 1006. Moreover, sincefirst and second semiconductor structures 102 and 104 are bonded in aface-to-back manner (e.g., semiconductor layers 1002 and 1004 beingdisposed on the top sides of first and second semiconductor structures102 and 104, respectively, in FIGS. 22A and 22B), the transistors ofperipheral circuits in second semiconductor structure 104 and the memorycell array in first semiconductor structure 102 face toward the samedirection (e.g., the negative y-direction in FIGS. 22A and 22B),according to some implementations. It is understood that pad-outinterconnect layer 902 in FIG. 9A or 9B is omitted from 3D memorydevices 2200 and 2201 in FIGS. 22A and 22B for ease of illustration andmay be included in 3D memory devices 2200 and 2201 as described abovewith respect to FIGS. 9A and 9B.

As described above, second and third semiconductor structures 104 and106 can have peripheral circuits having transistors with differentapplied voltages. For example, second semiconductor structure 104 may beone example of semiconductor structure 408 including LLV circuits 402(and LV circuits 404 in some examples) in FIG. 4B, and thirdsemiconductor structure 106 may be one example of semiconductorstructure 410 including HV circuits 406 (and LV circuits 404 in someexamples) in FIG. 4B, or vice versa. Thus, in some implementations,semiconductor layers 1006 and 1004 in third and second semiconductorstructures 106 and 104 have different thicknesses to accommodate thetransistors with different applied voltages. In one example, thirdsemiconductor structure 106 may include HV circuits 406 and secondsemiconductor structure 104 may include LLV circuits 402, and thethickness of semiconductor layer 1006 in third semiconductor structure106 may be larger than the thickness of semiconductor layer 1004 insecond semiconductor structure 104. Moreover, in some implementations,the gate dielectrics of the transistors in third and secondsemiconductor structures 106 and 104 have different thicknesses as wellto accommodate the different applied voltages. In one example, thirdsemiconductor structure 106 may include HV circuits 406 and secondsemiconductor structure 104 may include LLV circuits 402, and thethickness of the gate dielectrics of the transistors in thirdsemiconductor structure 106 may be larger (e.g., at least 5-fold) thanthe thickness of the gate dielectrics of the transistors in secondsemiconductor structure 104.

FIGS. 23A-23C illustrate side views of various examples of 3D memorydevices 2200 and 2201 in FIGS. 22A and 22B, according to various aspectsof the present disclosure. As shown in FIG. 23A, as one example of 3Dmemory devices 2200 and 2201 in FIGS. 22A and 22B, 3D memory device 2300is a bonded chip including first semiconductor structure 102, secondsemiconductor structure 104, and third semiconductor structure 106,which are stacked over one another in different planes in the verticaldirection (e.g., they-direction in FIG. 23A), according to someimplementations. First and second semiconductor structures 102 and 104are bonded at bonding interface 103 therebetween, and second and thirdsemiconductor structures 104 and 106 are bonded at bonding interface 105therebetween, according to some implementations.

As shown in FIG. 23A, third semiconductor structure 106 can includesemiconductor layer 1006 having semiconductor materials. In someimplementations, semiconductor layer 1006 is a silicon substrate havingsingle crystalline silicon. Third semiconductor structure 106 can alsoinclude a device layer 2302 above and in contact with semiconductorlayer 1006. In some implementations, device layer 2302 includes a firstperipheral circuit 2304 and a second peripheral circuit 1106. Firstperipheral circuit 2304 can include HV circuits 406, such as drivingcircuits (e.g., string drivers 704 in row decoder/word line driver 308and drivers in column decoder/bit line driver 306), and secondperipheral circuit 2306 can include LV circuits 404, such as page buffercircuits (e.g., page buffer circuits 702 in page buffer 304) and logiccircuits (e.g., in control logic 312). In some implementations, firstperipheral circuit 2304 includes a plurality of transistors 2308 incontact with semiconductor layer 1006, and second peripheral circuit2306 includes a plurality of transistors 2310 in contact withsemiconductor layer 1006. Transistors 2308 and 2310 can include anytransistors disclosed herein, such as planar transistors 500 and 3Dtransistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 2308or 2310 includes a gate dielectric, and the thickness of the gatedielectric of transistor 2308 (e.g., in HV circuit 406) is larger thanthe thickness of the gate dielectric of transistor 2310 (e.g., in LVcircuit 404) due to the higher voltage applied to transistor 2308 thantransistor 2310. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 2308 and 2310) can be formedon or in semiconductor layer 1006 as well.

In some implementations, third semiconductor structure 106 furtherincludes an interconnect layer 2312 above device layer 2302 to transferelectrical signals to and from peripheral circuits 2306 and 2304. Asshown in FIG. 23A, interconnect layer 2312 can be vertically betweenbonding interface 105 and device layer 2302 (including transistors 2308and 2310 of peripheral circuits 2304 and 2306). Interconnect layer 2312can include a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. The interconnects in interconnect layer 2312 can becoupled to transistors 2308 and 2310 of peripheral circuits 2304 and2306 in device layer 2302. Interconnect layer 2312 can further includeone or more ILD layers in which the lateral lines and vias can form.That is, interconnect layer 2312 can include lateral lines and vias inmultiple ILD layers. In some implementations, the devices in devicelayer 2302 are coupled to one another through the interconnects ininterconnect layer 2312. For example, peripheral circuit 2304 may becoupled to peripheral circuit 2306 through interconnect layer 2312. Theinterconnects in interconnect layer 2312 can include conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof. The ILD layers in interconnect layer 2312 caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof.

In some implementations, the interconnects in interconnect layer 2312include Cu, which has a relatively low resistivity (better electricalperformance) among conductive metal materials. As described below withrespect to the fabrication process, although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), since thefabrication of interconnect layer 2312 can be separated from thehigh-temperature processes in forming first and second semiconductorstructures 102 and 104, the interconnects of interconnect layer 2312having Cu can become feasible.

As shown in FIG. 23A, third semiconductor structure 106 can furtherinclude a bonding layer 1014 at bonding interface 105 and above and incontact with interconnect layer 2312. Bonding layer 1014 can include aplurality of bonding contacts 1015 and dielectrics electricallyisolating bonding contacts 1015. Bonding contacts 1015 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, bondingcontacts 1015 of bonding layer 1014 include Cu. The remaining area ofbonding layer 1014 can be formed with dielectrics including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof. Bonding contacts 1015 andsurrounding dielectrics in bonding layer 1014 can be used for hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal (e.g., Cu-to-Cu) bonding and dielectric-dielectric(e.g., SiO₂-to-SiO₂) bonding simultaneously.

As shown in FIG. 23A, second semiconductor structure 104 can alsoinclude a bonding layer 1012 at bonding interface 105, e.g., on theopposite side of bonding interface 105 with respect to bonding layer1014 in third semiconductor structure 106. Bonding layer 1012 caninclude a plurality of bonding contacts 1013 and dielectricselectrically isolating bonding contacts 1013. Bonding contacts 1013 caninclude conductive materials, such as Cu. The remaining area of bondinglayer 1012 can be formed with dielectric materials, such as siliconoxide. Bonding contacts 1013 and surrounding dielectrics in bondinglayer 1012 can be used for hybrid bonding. In some implementations,bonding interface 105 is the place at which bonding layers 1014 and 1012are met and bonded. In practice, bonding interface 105 can be a layerwith a certain thickness that includes the top surface of bonding layer1014 of third semiconductor structure 106 and the bottom surface ofbonding layer 1012 of second semiconductor structure 104.

As shown in FIG. 23A, second semiconductor structure 104 furtherincludes an interconnect layer 2326 above and in contact with bondinglayer 1012 to transfer electrical signals. Interconnect layer 2326 caninclude a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. Interconnect layer 2326 can further include one ormore ILD layers in which the lateral lines and vias can form. Theinterconnects in interconnect layer 2326 can include conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof. The ILD layers in interconnect layer 2326 caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof.

In some implementations, the interconnects in interconnect layer 2326include Cu, which has a relatively low resistivity (better electricalperformance) among conductive metal materials. As described below withrespect to the fabrication process, although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), since thefabrication of interconnect layer 2326 can occur after thehigh-temperature processes in forming components (e.g., NAND memorystrings 208) in first semiconductor structure 102 and components in adevice layer 2314 in second semiconductor structure 104, as well asbeing separated from the high-temperature processes in forming thirdsemiconductor structure 106, the interconnects of interconnect layer2326 having Cu can become feasible.

As shown in FIG. 23A, second semiconductor structure 104 can furtherinclude device layer 2314 above and in contact with interconnect layer2326. In some implementations, device layer 2314 includes a thirdperipheral circuit 2316 and a fourth peripheral circuit 2318. In someimplementations, the devices in device layer 2314 are coupled to oneanother through the interconnects in interconnect layer 2326. Forexample, peripheral circuit 2316 may be coupled to peripheral circuit2318 through interconnect layer 2326. Third peripheral circuit 2316 caninclude LLV circuits 402, such as I/O circuits (e.g., in interface 316and data bus 318), and fourth peripheral circuit 2318 can include LVcircuits 404, such as page buffer circuits (e.g., page buffer circuits702 in page buffer 304) and logic circuits (e.g., in control logic 312).In some implementations, third peripheral circuit 2316 includes aplurality of transistors 2320, and fourth peripheral circuit 2318includes a plurality of transistors 2322 as well. Transistors 2320 and2322 can include any transistors disclosed herein, such as planartransistors 500 and 3D transistors 600. As described above in detailwith respect to transistors 500 and 600, in some implementations, eachtransistor 2320 or 2322 includes a gate dielectric, and the thickness ofthe gate dielectric of transistor 2320 (e.g., in LLV circuit 402) issmaller than the thickness of the gate dielectric of transistor 2322(e.g., in LV circuit 404) due to the lower voltage applied to transistor2320 than transistor 2322. Trench isolations (e.g., STIs) and dopedregions (e.g., wells, sources, and drains of transistors 2320 and 2322)can be formed on or in semiconductor layer 1004 as well.

Moreover, the different voltages applied to different transistors 2320,2322, 2308, and 2310 in second and third semiconductor structures 104and 106 can lead to differences of device dimensions between second andthird semiconductor structures 104 and 106. In some implementations, thethickness of the gate dielectric of transistor 2308 (e.g., in HV circuit406) is larger than the thickness of the gate dielectric of transistor2320 (e.g., in LLV circuit 402) due to the higher voltage applied totransistor 2308 than transistor 2320. In some implementations, thethickness of the gate dielectric of transistor 2322 (e.g., in LV circuit404) is the same as the thickness of the gate dielectric of transistor2310 (e.g., in LV circuit 404) due to the same voltage applied totransistor 2322 and transistor 2310. In some implementations, thethickness of semiconductor layer 1006 in which transistor 2308 (e.g., inHV circuit 406) is formed is larger than the thickness of semiconductorlayer 1004 in which transistor 2320 (e.g., in LLV circuit 402) is formeddue to the higher voltage applied to transistor 2308 than transistor2320.

First semiconductor structure 102 can be bonded on top of secondsemiconductor structure 104 in a face-to-back manner at bondinginterface 103. As shown in FIG. 23A, second semiconductor structure 104can include semiconductor layer 1004 having semiconductor materials. Insome implementations, semiconductor layer 1004 is a layer of singlecrystalline silicon transferred from a silicon substrate or an SOIsubstrate and attached to the top surface of first semiconductorstructure 102 by transfer bonding. In some implementations, bondinginterface 103 is disposed vertically between an interconnect layer 2328of first semiconductor structure 102 and semiconductor layer 1004 as aresult of transfer bonding, which transfers semiconductor layer 1004from another substrate and bonds semiconductor layer 1004 onto firstsemiconductor structure 102 as described below in detail. In someimplementations, bonding interface 103 is the place at whichinterconnect layer 2328 and semiconductor layer 1004 are met and bonded.In practice, bonding interface 103 can be a layer with a certainthickness that includes the bottom surface of interconnect layer 2328 offirst semiconductor structure 102 and the top surface of semiconductorlayer 1004 of second semiconductor structure 104. In someimplementations, dielectric layer(s) (e.g., silicon oxide layer) areformed vertically between bonding interface 103 and semiconductor layer1004 and/or between bonding interface 103 and interconnect layer 2328 tofacilitate the transfer bonding of semiconductor layer 1004 ontointerconnect layer 2328. Thus, it is understood that bonding interface103 may include the surfaces of the dielectric layer(s) in someexamples.

As shown in FIG. 23A, second semiconductor structure 104 can furtherinclude one or more contacts 2324 extending vertically throughsemiconductor layer 1004. Contact 2324 can extend vertically furtherthrough bonding interface 103 to be in contact with the interconnects ininterconnect layer 2328. In some implementations, contact 2324 iscoupled to the interconnects in interconnect layer 2326. Contact 2324can include conductive materials including, but not limited to, W, Co,Cu, Al, silicides, or any combination thereof. In some implementations,contact 2324 includes W. In some implementations, contact 2324 includesa via surrounded by a dielectric spacer (e.g., having silicon oxide) toelectrically separate the via from semiconductor layer 1004. Dependingon the thickness of semiconductor layer 1004, contact 2324 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm).

As shown in FIG. 23A, first semiconductor structure 102 can furtherinclude interconnect layer 2328 on the opposite side of bondinginterface 103 with respect to semiconductor layer 1004 to transferelectrical signals. Interconnect layer 2328 can include a plurality ofinterconnects, such as MEOL interconnects and BEOL interconnects. Insome implementations, the interconnects in interconnect layer 2328 alsoinclude local interconnects, such as bit line contacts and word linecontacts. Contacts 2324 through semiconductor layer 1004 can couple theinterconnects in interconnect layer 2328 to the interconnects ininterconnect layer 2326. Interconnect layer 2328 can further include oneor more ILD layers in which the lateral lines and vias can form. Theinterconnects in interconnect layer 2328 can include conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof. The ILD layers in interconnect layer 2328 caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof.

As shown in FIG. 23A, first semiconductor structure 102 can include amemory cell array, such as an array of NAND memory strings 208 above andin contact with interconnect layer 2328. In some implementations,interconnect layer 2328 is vertically between NAND memory strings 208and bonding interface 103. Each NAND memory string 208 extendsvertically through a plurality of pairs each including a conductivelayer and a dielectric layer, according to some implementations. Thestacked and interleaved conductive layers and dielectric layers are alsoreferred to herein as a stack structure, e.g., a memory stack 2327.Memory stack 2327 may be an example of memory stack 804 in FIGS. 8A-8C,and the conductive layer and dielectric layer in memory stack 2327 maybe examples of gate conductive layers 806 and dielectric layer 808,respectively, in memory stack 804. The interleaved conductive layers anddielectric layers in memory stack 2327 alternate in the verticaldirection, according to some implementations. Each conductive layer caninclude a gate electrode (gate line) surrounded by an adhesive layer anda gate dielectric layer. The gate electrode of the conductive layer canextend laterally as a word line, ending at one or more staircasestructures of memory stack 2327.

In some implementations, each NAND memory string 208 is a “charge trap”type of NAND memory string including any suitable channel structuresdisclosed herein, such as bottom plug channel structure 812A, sidewallplug channel structure 812B, or bottom open channel structure 812C,described above in detail with respect to FIGS. 8A-8C. It is understoodthat NAND memory strings 208 are not limited to the “charge trap” typeof NAND memory strings and may be “floating gate” type of NAND memorystrings in other examples.

As shown in FIG. 23A, first semiconductor structure 102 can furtherinclude semiconductor layer 1002 disposed above memory stack 2327 and incontact with the sources of NAND memory strings 208. In someimplementations, NAND memory strings 208 are disposed vertically betweenbonding interface 103 and semiconductor layer 1002. Semiconductor layer1002 can include semiconductor materials. In some implementations,semiconductor layer 1002 is a thinned silicon substrate having singlecrystalline silicon on which memory stack 2327 and NAND memory strings208 (e.g., including bottom plug channel structure 812A or sidewall plugchannel structure 812B) are formed. It is understood that in someexamples, trench isolations and doped regions (not shown) may be formedin semiconductor layer 1002 as well.

As shown in FIG. 23A, first semiconductor structure 102 can furtherinclude a pad-out interconnect layer 902 above and in contact withsemiconductor layer 1002. In some implementations, semiconductor layer1002 is disposed vertically between pad-out interconnect layer 902 andNAND memory strings 208. Pad-out interconnect layer 902 can includeinterconnects, e.g., contact pads 2332, in one or more ILD layers.Pad-out interconnect layer 902 and interconnect layer 2328 can be formedon opposite sides of semiconductor layer 1002. In some implementations,the interconnects in pad-out interconnect layer 902 can transferelectrical signals between 3D memory device 2300 and external devices,e.g., for pad-out purposes.

As shown in FIG. 11A, first semiconductor structure 102 can furtherinclude one or more contacts 2330 extending vertically throughsemiconductor layer 1002. In some implementations, contact 2330 couplesthe interconnects in interconnect layer 2328 to contact pads 2332 inpad-out interconnect layer 902 to make an electrical connection throughsemiconductor layer 1002. Contact 2330 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, silicides, or anycombination thereof. In some implementations, contact 1130 includes W.In some implementations, contact 2330 includes a via surrounded by adielectric spacer (e.g., having silicon oxide) to electrically separatethe via from semiconductor layer 1002. Depending on the thickness ofsemiconductor layer 1002, contact 2330 can be an ILV having a depth inthe submicron-level (e.g., between 10 nm and 1 μm), or a TSV having adepth in the micron- or tens micron-level (e.g., between 1 μm and 100μm).

As a result, peripheral circuits 2304, 2306, 2316, and 2318 in third andsecond semiconductor structures 106 and 104 can be coupled to NANDmemory strings 208 in first semiconductor structure 102 through variousinterconnection structures, including interconnect layers 2312, 2326,and 2328, bonding layers 1014 and 1012, as well as contacts 2324.Moreover, peripheral circuits 2304, 2306, 2316, and 2318 and NAND memorystrings 208 in 3D memory device 2300 can be further coupled to externaldevices through contacts 2330 and pad-out interconnect layer 902.

It is understood that the material of semiconductor layer 1002 in firstsemiconductor structure 102 is not limited to single crystalline siliconas described above with respect to FIG. 23A and may be any othersuitable semiconductor materials. For example, as shown in FIG. 23B, a3D memory device 2301 may include semiconductor layer 1002 havingpolysilicon in first semiconductor structure 102. NAND memory strings208 of 3D memory device 2301 in contact with semiconductor layer 1002having polysilicon can include any suitable channel structures disclosedherein that are in contact with a polysilicon layer, such as bottom openchannel structure 812C. In some implementations, NAND memory strings 208of 3D memory device 2301 are “floating gate” type of NAND memorystrings, and semiconductor layer 1002 having polysilicon is in contactwith the “floating gate” type of NAND memory strings as the source platethereof. It is understood that the details of the same components (e.g.,materials, fabrication process, functions, etc.) in both 3D memorydevices 2300 and 2301 are not repeated for ease of description.

It is also understood that the pad-out of 3D memory devices is notlimited to from first semiconductor structure 102 having NAND memorystrings 208 as shown in FIGS. 23A and 23B (corresponding to FIG. 9B) andmay be from third semiconductor structure 106 having peripheral circuit2304 (corresponding to FIG. 9A). For example, as shown in FIG. 23C, a 3Dmemory device 2303 may include pad-out interconnect layer 902 in thirdsemiconductor structure 106. Pad-out interconnect layer 902 can be incontact with semiconductor layer 1006 of third semiconductor structure106 on which transistors 2308 of peripheral circuit 2304 are formed. Insome implementations, third semiconductor structure 106 further includesone or more contacts 2334 extending vertically through semiconductorlayer 1006. In some implementations, contact 2334 couples theinterconnects in interconnect layer 2312 in third semiconductorstructure 106 to contact pads 2332 in pad-out interconnect layer 902 tomake an electrical connection through semiconductor layer 1006. Contact2334 can include conductive materials including, but not limited to, W,Co, Cu, Al, silicides, or any combination thereof. In someimplementations, contact 2334 includes W. In some implementations,contact 2334 includes a via surrounded by a dielectric spacer (e.g.,having silicon oxide) to electrically separate the via fromsemiconductor layer 1006. Depending on the thickness of semiconductorlayer 1006, contact 2334 can be an ILV having a depth in thesubmicron-level (e.g., between 10 nm and 1 μm), or a TSV having a depthin the micron- or tens micron-level (e.g., between 1 μm and 100 μm). Itis understood that the details of the same components (e.g., materials,fabrication process, functions, etc.) in both 3D memory devices 2300 and2303 are not repeated for ease of description.

It is further understood that in some examples, similar to bondinginterface 105, bonding interface 103 may result from hybrid bonding andthus, be disposed vertically between two bonding layers each includingbonding contacts in second and third semiconductor structures 104 and106, respectively. For example, as shown in FIG. 23C, 3D memory device2303 may include bonding layers 1008 and 1010 in first and secondsemiconductor structures 102 and 104, respectively, at bonding interface103, i.e., on opposite sides of bonding interface 103. Bonding layer1008 or 1010 can include a plurality of bonding contacts 1009 or 1011and dielectrics electrically isolating bonding contacts 1009 or 1011.Bonding contacts 1009 and 1011 can include conductive materials, such asCu. The remaining area of bonding layer 1008 or 1010 can be formed withdielectric materials, such as silicon oxide. Bonding contacts 1009 and1011 and surrounding dielectrics in bonding layer 1008 or 1010 can beused for hybrid bonding. In some implementations, bonding interface 103is the place at which bonding layers 1008 and 1010 are met and bonded.In practice, bonding interface 103 can be a layer with a certainthickness that includes the top surface of bonding layer 1010 of secondsemiconductor structure 104 and the bottom surface of bonding layer 1008of first semiconductor structure 102. Contact 2324 can be coupled tobonding contacts 1011, and interconnect layer 2328 can be coupled tobonding contacts 1009.

FIGS. 24A-24F illustrate a fabrication process for forming the 3D memorydevices in FIGS. 22A and 22B, according to some aspects of the presentdisclosure. FIG. 26 illustrates a flowchart of a method 2600 for formingthe 3D memory devices in FIGS. 22A and 22B, according to some aspects ofthe present disclosure. Examples of the 3D memory devices depicted inFIGS. 24A-24F and 26 include 3D memory devices 2300, 2301, and 2303depicted in FIGS. 23A-23C. FIGS. 24A-24F and 26 will be describedtogether. It is understood that the operations shown in method 2600 arenot exhaustive and that other operations can be performed as wellbefore, after, or between any of the illustrated operations. Further,some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 26 . For example, operation 2602 maybe performed after operation 2608 or in parallel with operations2604-2608.

Referring to FIG. 26 , method 2600 starts at operation 2602, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 24A, a stack structure, such as a memory stack2426 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 2424. To form memory stack 2426, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 2424. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 2426 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 2426 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 2426 and silicon substrate 2424.

As illustrated in FIG. 24A, NAND memory strings 2428 are formed abovesilicon substrate 2424, each of which extends vertically through memorystack 2426 to be in contact with silicon substrate 2424. In someimplementations, fabrication processes to form NAND memory string 2428include forming a channel hole through memory stack 2426 (or thedielectric stack) and into silicon substrate 2424 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 2428 may vary depending on the typesof channel structures of NAND memory strings 2428 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 24A, an interconnect layer 2430 is formedabove memory stack 2426 and NAND memory strings 2428. Interconnect layer2430 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 2428. Insome implementations, interconnect layer 2430 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 2430 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 24A can be collectively referred to as interconnect layer 2430.

Method 2600 proceeds to operation 2604, as illustrated in FIG. 26 , inwhich a semiconductor layer is formed above the array of NAND memorystrings. The semiconductor layer can include single crystalline silicon.In some implementations, to form the semiconductor layer, anothersubstrate and the second substrate are bonded in a face-to-face manner,and the other substrate is thinned to leave the semiconductor layer. Thebonding can include transfer bonding. The other substrate can be asilicon substrate having single crystalline silicon.

As illustrated in FIG. 24B, a semiconductor layer 2410, such as a singlecrystalline silicon layer, is formed above interconnect layer 2430 andNAND memory strings 2428. Semiconductor layer 2410 can be attached aboveinterconnect layer 2430 to form a bonding interface 2412 verticallybetween semiconductor layer 2410 and interconnect layer 2430. In someimplementations, to form semiconductor layer 2410, another siliconsubstrate (not shown in FIG. 24B) and silicon substrate 2424 are bondedin a face-to-face manner (having the components formed on siliconsubstrate 2424, such as NAND memory strings 2428, facing toward theother silicon substrate) using transfer bonding, thereby forming bondinginterface 2412. The other silicon substrate can then be thinned usingany suitable processes to leave semiconductor layer 2410 attached aboveinterconnect layer 2430. The details of various transfer bondingprocesses are described above with respect to FIGS. 48A-48D and FIGS.49A-49D and thus, are not repeated for ease of description.

Referring to FIG. 26 , method 2600 proceeds to operation 2606, in whicha first transistor is formed on the semiconductor layer. As illustratedin FIG. 24C, a plurality of transistors 2414 and 2416 are formed onsemiconductor layer 2410 having single crystalline silicon. Transistors2414 and 2416 can be formed by a plurality of processes including, butnot limited to, photolithography, dry/wet etch, thin film deposition,thermal growth, implantation, CMP, and any other suitable processes. Insome implementations, doped regions are formed in semiconductor layer2410 by ion implantation and/or thermal diffusion, which function, forexample, as wells and source/drain regions of transistors 2414 and 2416.In some implementations, isolation regions (e.g., STIs) are also formedin semiconductor layer 2410 by wet/dry etch and thin film deposition. Insome implementations, the thickness of gate dielectric of transistor2414 is different from the thickness of gate dielectric of transistor2416, for example, by depositing a thicker silicon oxide film in theregion of transistor 2414 than the region of transistor 2416, or byetching back part of the silicon oxide film deposited in the region oftransistor 2416. It is understood that the details of fabricatingtransistors 2414 and 2416 may vary depending on the types of thetransistors (e.g., planar transistors 500 or 3D transistors 600 in FIGS.5A, 5B, 6A, and 6B) and thus, are not elaborated for ease ofdescription.

In some implementations, an interconnect layer 2420 is formed above thetransistor on the semiconductor layer. The interconnect layer caninclude a plurality of interconnects in one or more ILD layers. Asillustrated in FIG. 24C, an interconnect layer 2420 can be formed abovetransistors 2414 and 2416. Interconnect layer 2420 can includeinterconnects of MEOL and/or BEOL in a plurality of ILD layers to makeelectrical connections with transistors 2414 and 2416. In someimplementations, interconnect layer 2420 includes multiple ILD layersand interconnects therein formed in multiple processes. For example, theinterconnects in interconnect layer 2420 can include conductivematerials deposited by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 24C can be collectively referred to as interconnect layer 2420. Insome implementations, the interconnects in interconnect layer 2420include Cu, which has a relatively low resistivity among conductivemetal materials. It is understood that although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), using Cuas the conductive materials of the interconnects in interconnect layer2420 may become feasible since there are no more high-temperatureprocesses after the fabrication of interconnect layer 2420.

In some implementations, a contact through the semiconductor layer isformed. As illustrated in FIG. 24C, one or more contacts 2418 eachextending vertically through semiconductor layer 2410 is formed. Contact2418 can extend vertically further through bonding interface 2412 to bein contact with the interconnects in interconnect layer 2430. Contacts2418 can couple the interconnects in interconnect layers 2420 and 2430.Contacts 2418 can be formed by first patterning contact holes throughsemiconductor layer 2410 using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor.

In some implementations, a first bonding layer is formed above theinterconnect layer. The first bonding layer can include a plurality offirst bonding contacts. As illustrated in FIG. 24C, a bonding layer 2422is formed above interconnect layer 2420. Bonding layer 2422 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 1220 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 2420by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 2600 proceeds to operation 2608, as illustrated in FIG. 26 , inwhich a second transistor is formed on a second substrate. The secondsubstrate can be a silicon substrate having single crystalline silicon.As illustrated in FIG. 24D, a plurality of transistors 2404 and 2406 areformed on a silicon substrate 2402. Transistors 2404 and 2406 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 2402 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 2404 and 2406. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 2402 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 2404 isdifferent from the thickness of gate dielectric of transistor 2406, forexample, by depositing a thicker silicon oxide film in the region oftransistor 2404 than the region of transistor 2406, or by etching backpart of the silicon oxide film deposited in the region of transistor2406. It is understood that the details of fabricating transistors 2404and 2406 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 2408 is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 24D, an interconnect layer 2408 can be formed above transistors2404 and 2406. Interconnect layer 2408 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 2404 and 2406. In some implementations, interconnectlayer 2408 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 2408 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 24D can be collectively referred to as interconnectlayer 2408. In some implementations, the interconnects in interconnectlayer 2408 include Cu, which has a relatively low resistivity amongconductive metal materials. It is understood that although Cu has arelatively low thermal budget (incompatible with high-temperatureprocesses), using Cu as the conductive materials of the interconnects ininterconnect layer 2408 may become feasible since there are no morehigh-temperature processes after the fabrication of interconnect layer2408.

In some implementations, a second bonding layer is formed above theinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIG. 24D, a bonding layer2432 is formed above interconnect layer 2408. Bonding layer 2432 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 2408 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 2408by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 2600 proceeds to operation 2610, as illustrated in FIG. 26 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner. The first bonding contact in the first bondinglayer can be in contact with the second bonding contact in the secondbonding layer at a bonding interface after bonding the first and secondsubstrates. The bonding can include hybrid bonding.

As illustrated in FIG. 24E, silicon substrate 2424 and components formedthereon (e.g., memory stack 2426, NAND memory strings 2428, andtransistors 2416 and 2414) are flipped upside down. Bonding layer 2422facing down is bonded with bonding layer 2432 facing up, i.e., in aface-to-face manner, thereby forming a bonding interface 2412. That is,silicon substrate 2424 and components formed thereon can be bonded withsilicon substrate 2402 and components formed thereon in a face-to-facemanner, such that the bonding contacts in bonding layer 2422 are incontact with the bonding contacts in bonding layer 2432 at bondinginterface 2412. In some implementations, a treatment process, e.g.,plasma treatment, wet treatment and/or thermal treatment, is applied tobonding surfaces prior to bonding. Although not shown in FIG. 24E, it isunderstood that in some examples, silicon substrate 2402 and componentsformed thereon (e.g., transistors 2404 and 2406) can be flipped upsidedown, and bonding layer 2432 facing down can be bonded with bondinglayer 2422 facing up, i.e., in a face-to-face manner, thereby formingbonding interface 2412 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 2412 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 2422 and the bondingcontacts in bonding layer 2432 are aligned and in contact with oneanother, such that memory stack 2426 and NAND memory strings 2428 formedtherethrough and transistors 2416 and 2414 can be coupled to transistors2404 and 2406 through the bonded bonding contacts across bondinginterface 1237, according to some implementations.

Method 2600 proceeds to operation 2612, as illustrated in FIG. 26 , inwhich the first substrate or the second substrate is thinned. Asillustrated in FIG. 24F, silicon substrate 2424 (shown in FIG. 24E) isthinned to become a semiconductor layer 2434 having single crystallinesilicon. Silicon substrate 2424 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof. It is understood thatalthough not shown in FIG. 24F, in some examples, silicon substrate 2402may be thinned to become a semiconductor layer having single crystallinesilicon.

Method 2600 proceeds to operation 2614, as illustrated in FIG. 26 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned second substrate or above the arrayof NAND memory strings. As illustrated in FIG. 24F, a pad-outinterconnect layer 2436 is formed on semiconductor layer 2434 (thethinned silicon substrate 2424) above NAND memory strings 2428. Pad-outinterconnect layer 2436 can include interconnects, such as contact pads2438, formed in one or more ILD layers. Contact pads 2438 can includeconductive materials including, but not limited to, W, Co, Cu, Al, dopedsilicon, silicides, or any combination thereof. The ILD layers caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some implementations, after the bonding andthinning, contacts 2435 are formed, extending vertically throughsemiconductor layer 2434, for example, by wet/dry etching followed bydepositing dielectric materials as spacers and conductive materials asconductors. Contacts 2435 can couple contact pads 2438 in pad-outinterconnect layer 2436 to the interconnects in interconnect layer 2430.It is understood that in some examples, contacts 2435 may be formed insilicon substrate 2424 before thinning (the formation of semiconductorlayer 2434) and be exposed from the backside of silicon substrate 2424(where the thinning occurs) after the thinning. It is also understoodthat although not shown in FIG. 24F, in some examples, a pad-outinterconnect layer may be formed on the thinned silicon substrate 2402,and contacts may be formed through the thinned silicon substrate 2402 tocouple the pad-out interconnect layer and interconnect layer 2408 acrossthe thinned silicon substrate 2402. It is further understood that insome examples, the first substrate (e.g., silicon substrate 2424 orsemiconductor layer 2434 after thinning) may be removed and replacedwith a semiconductor layer having polysilicon in a similar manner asdescribed above with respect to FIGS. 12G and 12H.

FIGS. 25A-25F illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 22A and 22B, according to some aspects of thepresent disclosure. FIG. 27 illustrates a flowchart of another method2700 for forming the 3D memory devices in FIGS. 22A and 22B, accordingto some aspects of the present disclosure. Examples of the 3D memorydevices depicted in FIGS. 25A-25F and 27 include 3D memory devices 2300,2301, and 2303 depicted in FIGS. 23A-23C. FIGS. 25A-25F and 27 will bedescribed together. It is understood that the operations shown in method2700 are not exhaustive and that other operations can be performed aswell before, after, or between any of the illustrated operations.Further, some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 27 . For example, operation 2702,2704, and 2706 may be performed in parallel.

Referring to FIG. 27 , method 2700 starts at operation 2702, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 25A, a stack structure, such as a memory stack2504 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 2502. To form memory stack 2504, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 2502. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 2504 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 2504 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 2504 and silicon substrate 2502.

As illustrated in FIG. 25A, NAND memory strings 2506 are formed abovesilicon substrate 2502, each of which extends vertically through memorystack 2504 to be in contact with silicon substrate 2502. In someimplementations, fabrication processes to form NAND memory string 2506include forming a channel hole through memory stack 2504 (or thedielectric stack) and into silicon substrate 2502 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 2506 may vary depending on the typesof channel structures of NAND memory strings 2506 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 25A, an interconnect layer 2508 is formedabove memory stack 2504 and NAND memory strings 2506. Interconnect layer2508 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 2506. Insome implementations, interconnect layer 2508 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 2508 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 25A can be collectively referred to as interconnect layer 2508.

In some implementations, a first bonding layer is formed above the arrayof NAND memory strings. The first bonding layer can include a pluralityof first bonding contacts. As illustrated in FIG. 25A, a bonding layer2510 is formed above interconnect layer 2508. Bonding layer 2510 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 2508 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer by first patterning contact holes through the dielectric layerusing patterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor. It isunderstood that in some examples, bonding layer 2510 may be a dielectriclayer (e.g., a silicon oxide layer) without bonding contacts for fusionbonding, instead of hybrid bonding.

Method 2700 proceeds to operation 2704, as illustrated in FIG. 27 , inwhich a first transistor is formed on a second substrate. The secondsubstrate can be a silicon substrate having single crystalline silicon.As illustrated in FIG. 25B, a plurality of transistors 2514 and 2516 areformed on a silicon substrate 2512. Transistors 2514 and 2516 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 2512 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 2514 and 2516. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 2512 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 2514 isdifferent from the thickness of gate dielectric of transistor 2516, forexample, by depositing a thicker silicon oxide film in the region oftransistor 2514 than the region of transistor 2516, or by etching backpart of the silicon oxide film deposited in the region of transistor2516. It is understood that the details of fabricating transistors 2514and 2516 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 2518 is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 25B, an interconnect layer 2518 can be formed above transistors2514 and 2516. Interconnect layer 2518 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 2514 and 2516. In some implementations, interconnectlayer 2518 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 2518 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 25B can be collectively referred to as interconnectlayer 2518.

In some implementations, a second bonding layer is formed aboveinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIG. 25B, a bonding layer2520 is formed above interconnect layer 2518. Bonding layer 2520 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 2518 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 2518by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 2700 proceeds to operation 2706, as illustrated in FIG. 27 , inwhich a second transistor is formed on a third substrate. The thirdsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, any two or all of operations 2702, 2704, and2706 are performed in parallel to reduce process time.

As illustrated in FIG. 25C, a plurality of transistors 2524 and 2526 areformed on a silicon substrate 2522. Transistors 2524 and 2526 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 2522 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 2524 and 2526. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 2522 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 2524 isdifferent from the thickness of gate dielectric of transistor 2526, forexample, by depositing a thicker silicon oxide film in the region oftransistor 2524 than the region of transistor 2526, or by etching backpart of the silicon oxide film deposited in the region of transistor2526. It is understood that the details of fabricating transistors 2524and 2526 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 2528 is formed above thetransistor on the third substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 25C, an interconnect layer 2528 can be formed above transistors2524 and 2526. Interconnect layer 2528 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 2524 and 2526. In some implementations, interconnectlayer 2528 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 2528 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 25C can be collectively referred to as interconnectlayer 2528.

In some implementations, a third bonding layer is formed aboveinterconnect layer. The third bonding layer can include a plurality ofthird bonding contacts. As illustrated in FIG. 25C, a bonding layer 2530is formed above interconnect layer 2530. Bonding layer 2530 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 2528 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 2528by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 2700 proceeds to operation 2708, as illustrated in FIG. 27 , inwhich the second substrate and the third substrate are bonded in aface-to-face manner. The second bonding contact in the second bondinglayer can be in contact with the third bonding contact in the thirdbonding layer at a first bonding interface after bonding the first andsecond substrates. The bonding can include hybrid bonding.

As illustrated in FIG. 25D, silicon substrate 2512 and components formedthereon (e.g., transistors 2514 and 2516) are flipped upside down.Bonding layer 2520 facing down is bonded with bonding layer 2530 facingup, i.e., in a face-to-face manner, thereby forming a bonding interface2540. That is, silicon substrate 2512 and components formed thereon canbe bonded with silicon substrate 2522 and components formed thereon in aface-to-face manner, such that the bonding contacts in bonding layer2530 are in contact with the bonding contacts in bonding layer 2520 atbonding interface 2540. In some implementations, a treatment process,e.g., plasma treatment, wet treatment and/or thermal treatment, isapplied to bonding surfaces prior to bonding. Although not shown in FIG.25D, it is understood that in some examples, silicon substrate 2522 andcomponents formed thereon (e.g., transistors 2524 and 2526) can beflipped upside down, and bonding layer 2530 facing down can be bondedwith bonding layer 2520 facing up, i.e., in a face-to-face manner,thereby forming bonding interface 2540 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 2540 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 2520 and the bondingcontacts in bonding layer 2530 are aligned and in contact with oneanother, such that transistors 2524 and 2526 can be coupled totransistors 2514 and 2516 through the bonded bonding contacts acrossbonding interface 2540, according to some implementations.

In some implementations, the second substrate is thinned, and a contactthrough the thinned second substrate is formed. As illustrated in FIG.25E, silicon substrate 2512 (shown in FIG. 25D) is thinned to become asemiconductor layer 2534 having single crystalline silicon. Siliconsubstrate 2512 can be thinned by processes including, but not limitedto, wafer grinding, dry etch, wet etch, CMP, any other suitableprocesses, or any combination thereof.

As illustrated in FIG. 25E, one or more contacts 2536 each extendingvertically through semiconductor layer 2534 is formed. Contacts 2536 canbe coupled to the interconnects in interconnect layer 2518. Contacts2536 can be formed by first patterning contact holes throughsemiconductor layer 2534 using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor. It is understood that in some examples,contacts 2536 may be formed in silicon substrate 2512 before thinning(the formation of semiconductor layer 2534, e.g., in FIG. 25B) and beexposed from the backside of silicon substrate 2512 (where the thinningoccurs) after the thinning.

In some implementations, a fourth bonding layer is formed on the thinnedsecond substrate. The fourth bonding layer can include a plurality offourth bonding contacts. As shown in FIG. 25E, a bonding layer 2511 isformed on semiconductor layer 2534, i.e., the backside of siliconsubstrate 2512 (where the thinning occurs) after the thinning. Bondinglayer 2511 can include a plurality of bonding contacts surrounded bydielectrics. In some implementations, a dielectric layer is deposited onthe surface of semiconductor layer 2534 by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. The bonding contacts can then be formed throughthe dielectric layer and in contact with contacts 2536 by firstpatterning contact holes through the dielectric layer using patterningprocess (e.g., photolithography and dry/wet etch of dielectric materialsin the dielectric layer). The contact holes can be filled with aconductor (e.g., Cu). In some implementations, filling the contact holesincludes depositing an adhesion (glue) layer, a barrier layer, and/or aseed layer before depositing the conductor. It is understood that insome examples, bonding layer 2511 may be a dielectric layer (e.g., asilicon oxide layer) without bonding contacts for fusion bonding,instead of hybrid bonding. It is further understood that in someexamples, the bonding layer may be omitted to expose the silicon surfaceof semiconductor layer 2534 for anodic bonding or fusion bonding,instead of hybrid bonding.

Method 2700 proceeds to operation 2710, as illustrated in FIG. 15 , inwhich the first substrate and the second substrate are bonded in aface-to-back manner. The first bonding contact in the first bondinglayer can be in contact with the fourth bonding contact in the fourthbonding layer at a second bonding interface after bonding the third andsecond substrates. The bonding can include hybrid bonding.

As illustrated in FIG. 25E, silicon substrate 2502 and components formedthereon (e.g., memory stack 2504 and NAND memory strings 2506) areflipped upside down. Bonding layer 2510 on interconnect layer 2508facing down is bonded with bonding layer 2511 on semiconductor layer2534 facing up, i.e., in a face-to-back manner, thereby forming abonding interface 2532. That is, silicon substrate 2502 and componentsformed thereon can be bonded with thinned silicon substrate 2512 (i.e.,semiconductor layer 2534) and components formed thereon after bondingwith silicon 2522 in a face-to-back manner at bonding interface 2532. Insome implementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 25E, it is understood that insome examples, silicon substrate 2512 and components formed thereon(e.g., transistors 2516, 2514, 2524, and 2526) can be flipped upsidedown, and the bonding layer on semiconductor layer 2534 facing down canbe bonded with the bonding layer on interconnect layer 2508 facing up,i.e., in a face-to-face manner, thereby forming bonding interface 2532as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 2532 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 2510 on interconnectlayer 2508 and the bonding contacts in bonding layer 2511 onsemiconductor layer 2534 are aligned and in contact with one another,such that memory stack 2504 and NAND memory strings 2506 can be coupledto transistors 2514, 2516, 2524, and 2526 through contacts 2536 throughsemiconductor layer 2534 and the bonded bonding contacts across bondinginterface 2540, according to some implementations. It is understood thatin some examples, anodic bonding or fusion bonding, instead of hybridbonding, may be performed to bond silicon substrate 2502 and thinnedsilicon substrate 2512 (and components formed thereon) at bondinginterface 2532 without bonding contacts in the bonding layers. It isfurther understood that in some examples, silicon substrate 2522,instead of silicon substrate 2512, may be thinned and bonded withsilicon substrate 2502 in a similar face-to-back manner as describedabove.

Method 2700 proceeds to operation 2712, as illustrated in FIG. 27 , inwhich the first substrate or the third substrate is thinned. Asillustrated in FIG. 25F, silicon substrate 2522 (shown in FIG. 25E) isthinned to become a semiconductor layer 2542 having single crystallinesilicon. Silicon substrate 2522 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof. It is understood thatalthough not shown in FIG. 25F, in some examples, silicon substrate 2502may be thinned to become a semiconductor layer having single crystallinesilicon.

Method 2700 proceeds to operation 2714, as illustrated in FIG. 27 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned third substrate or above the array ofNAND memory strings. As illustrated in FIG. 25F, a pad-out interconnectlayer 2546 is formed on semiconductor layer 2542 (the thinned siliconsubstrate 2522). Pad-out interconnect layer 2546 can includeinterconnects, such as contact pads 2548, formed in one or more ILDlayers. Contact pads 2548 can include conductive materials including,but not limited to, W, Co, Cu, Al, doped silicon, silicides, or anycombination thereof. The ILD layers can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, low-k dielectrics, or any combination thereof. In someimplementations, after the bonding and thinning, contacts 2544 areformed, extending vertically through semiconductor layer 2542, forexample, by wet/dry etching followed by depositing dielectric materialsas spacers and conductive materials as conductors. Contacts 2544 cancouple contact pads 2548 in pad-out interconnect layer 2546 to theinterconnects in interconnect layer 2528. It is understood that in someexamples, contacts 2544 may be formed in silicon substrate 2522 beforethinning (the formation of semiconductor layer 2542, e.g., in FIG. 25C)and be exposed from the backside of silicon substrate 2522 (where thethinning occurs) after the thinning. It is further understood thatalthough not shown in FIG. 25F, in some examples, a pad-out interconnectlayer may be formed on the thinned silicon substrate 2502 above NANDmemory strings 2506, and contacts may be formed through the thinnedsilicon substrate 2502 to couple the pad-out interconnect layer andinterconnect layer 2508 across the thinned silicon substrate 2502.

FIGS. 28A and 28B illustrate schematic views of cross-sections of the 3Dmemory devices in FIGS. 9A and 9B, according to various aspects of thepresent disclosure. 3D memory devices 2800 and 2801 may be examples of3D memory devices 900 and 901 in FIGS. 9A and 9B. As shown in FIG. 28A,3D memory device 2800 can include stacked first, second, and thirdsemiconductor structures 102, 104, and 106. In some implementations,first semiconductor structure 102 on one side of 3D memory device 2800includes semiconductor layer 1002 and a memory cell array verticallybetween semiconductor layer 1002 and bonding interface 103. The memorycell array can include an array of NAND memory strings (e.g., NANDmemory strings 208 disclosed herein), and the sources of the array ofNAND memory strings can be in contact with semiconductor layer 1002(e.g., as shown in FIGS. 8A-8C). Semiconductor layer 1002 can includesemiconductor materials, such as single crystalline silicon (e.g., asilicon substrate or a thinned silicon substrate) or polysilicon (e.g.,a deposited layer), for example, depending on the types of channelstructures of the NAND memory strings (e.g., bottom plug channelstructure 812A, sidewall plug channel structure 812B, or bottom openchannel structure 812C).

In some implementations, second semiconductor structure 104 in theintermediate of 3D memory device 2800 includes a semiconductor layer1004 and some of the peripheral circuits of the memory cell array. Insome implementations, bonding interface 103 is disposed verticallybetween semiconductor layer 1004 and the peripheral circuits of secondsemiconductor structure 104. The transistors (e.g., planar transistors500 and 3D transistors 600) of the peripheral circuits can be in contactwith semiconductor layer 1004. Semiconductor layer 1004 can includesemiconductor materials, such as single crystalline silicon (e.g., alayer transferred from a silicon substrate or an SOI substrate). It isunderstood that in some examples, different from semiconductor layer1002 in first semiconductor structure 102, semiconductor layer 1004 onwhich the transistors are formed may include single crystalline silicon,but not polysilicon, due to the superior carrier mobility of singlecrystalline silicon that is desirable for transistors' performance.Bonding interface 103 between first and second semiconductor structures102 and 104 may result from transfer bonding. Through contacts (e.g.,ILVs/TSVs) across bonding interface 103 and through semiconductor layer1004 vertically between first and second semiconductor structures 102and 104 can make direct, short-distance (e.g., submicron-level)electrical connections between adjacent semiconductor structures 102 and104.

In some implementations, third semiconductor structure 106 on anotherside of 3D memory device 2800 includes a semiconductor layer 1006 andsome of the peripheral circuits of the memory cell array. In someimplementations, bonding interface 105 is disposed vertically betweensemiconductor layer 1006 and the peripheral circuits of thirdsemiconductor structure 106. The transistors (e.g., planar transistors500 and 3D transistors 600) of the peripheral circuits can be in contactwith semiconductor layer 1006. Semiconductor layer 1006 can includesemiconductor materials, such as single crystalline silicon (e.g., alayer transferred from a silicon substrate or an SOI substrate). It isunderstood that in some examples, different from semiconductor layer1002 in first semiconductor structure 102, semiconductor layer 1006 onwhich the transistors are formed may include single crystalline silicon,but not polysilicon, due to the superior carrier mobility of singlecrystalline silicon that is desirable for transistors' performance.Bonding interface 105 between third and second semiconductor structures106 and 104 may result from transfer bonding. Through contacts (e.g.,ILVs/TSVs) across bonding interface 105 and through semiconductor layer1006 vertically between third and second semiconductor structures 106and 104 can make direct, short-distance (e.g., submicron-level)electrical connections between adjacent semiconductor structures 106 and104.

It is understood that in some examples, first and second semiconductorstructures 102 and 104 may also include bonding layers 1008 and 1010,respectively, disposed on opposite sides of bonding interface 103, andthird and second semiconductor structures 106 and 104 may also includebonding layers 1014 and 1012, respectively, disposed on opposite sidesof bonding interface 105, as shown in FIG. 28B. In FIG. 28B, secondsemiconductor structure 104 of a 3D memory device 2801 can include twobonding layers 1010 and 1012 on two sides thereof. Bonding layer 1010can be disposed vertically between semiconductor layer 1004 and bondinginterface 103, and bonding layer 1012 can be disposed vertically betweenthe peripheral circuits of second semiconductor structure 104 andbonding interface 105. First semiconductor structure 102 of 3D memorydevice 2801 can include bonding layer 1008 disposed vertically betweenbonding interface 103 and semiconductor layer 1002. Third semiconductorstructure 106 of 3D memory device 2801 can include bonding layer 1014disposed vertically between bonding interface 105 and semiconductorlayer 1006. Each bonding layer 1008, 1010, 1012, or 1014 can includeconductive bonding contacts (not shown) and dielectrics electricallyisolating the bonding contacts. The bonding contacts of bonding layer1008 can be in contact with the bonding contacts of bonding layer 1010at bonding interface 103. As a result, bonding contacts across bondinginterface 103 in conjunction with through contacts (e.g., ILVs/TSVs)through semiconductor layer 1004 can make direct, short-distance (e.g.,micron-level) electrical connections between adjacent semiconductorstructures 102 and 104. Similarly, the bonding contacts of bonding layer1012 can be in contact with the bonding contacts of bonding layer 1014at bonding interface 105. As a result, bonding contacts across bondinginterface 105 in conjunction with through contacts (e.g., ILVs/TSVs)through semiconductor layer 1006 can make direct, short-distance (e.g.,micron-level) electrical connections between adjacent semiconductorstructures 106 and 104.

As shown in FIGS. 28A and 28B, since third and second semiconductorstructures 106 and 104 are bonded in a back-to-face manner (e.g.,semiconductor layers 1006 and 1004 being disposed on the bottom sides ofthird and second semiconductor structures 106 and 104, respectively, inFIGS. 28A and 28B), the transistors in third semiconductor structure 106and the transistors in second semiconductor structure 104 face towardthe same direction (e.g., the positive y-direction in FIGS. 28A and28B), according to some implementations. In some implementations,semiconductor layer 1004 is disposed vertically between the transistorsof the peripheral circuits in second semiconductor structure 104 andbonding interface 103, and semiconductor layer 1006 is disposedvertically between the transistors of the peripheral circuits in thirdsemiconductor structure 106 and bonding interface 105. Moreover, sincefirst and second semiconductor structures 102 and 104 are bonded in aface-to-back manner (e.g., semiconductor layers 1002 and 1004 beingdisposed on the bottom sides of first and second semiconductorstructures 102 and 104, respectively, in FIGS. 28A and 228 ), thetransistors of peripheral circuits in second and third semiconductorstructures 104 and 106 and the memory cell array in first semiconductorstructure 102 face toward the same direction (e.g., the positivey-direction in FIGS. 28A and 28B), according to some implementations. Itis understood that pad-out interconnect layer 902 in FIG. 9A or 9B isomitted from 3D memory devices 2800 and 2801 in FIGS. 28A and 28B forease of illustration and may be included in 3D memory devices 2800 and2801 as described above with respect to FIGS. 9A and 9B.

As described above, second and third semiconductor structures 104 and106 can have peripheral circuits having transistors with differentapplied voltages. For example, third semiconductor structure 106 may beone example of semiconductor structure 408 including LLV circuits 402(and LV circuits 404 in some examples) in FIG. 4B, and secondsemiconductor structure 104 may be one example of semiconductorstructure 410 including HV circuits 406 (and LV circuits 404 in someexamples) in FIG. 4B, or vice versa. Thus, in some implementations,semiconductor layers 1006 and 1004 in third and second semiconductorstructures 106 and 104 have different thicknesses to accommodate thetransistors with different applied voltages. In one example, secondsemiconductor structure 104 may include HV circuits 406 and thirdsemiconductor structure 106 may include LLV circuits 402, and thethickness of semiconductor layer 1004 in second semiconductor structure104 may be larger than the thickness of semiconductor layer 1006 inthird semiconductor structure 106. Moreover, in some implementations,the gate dielectrics of the transistors in third and secondsemiconductor structures 106 and 104 have different thicknesses as wellto accommodate the different applied voltages. In one example, secondsemiconductor structure 104 may include HV circuits 406 and thirdsemiconductor structure 106 may include LLV circuits 402, and thethickness of the gate dielectrics of the transistors in secondsemiconductor structure 104 may be larger (e.g., at least 5-fold) thanthe thickness of the gate dielectrics of the transistors in thirdsemiconductor structure 106.

FIGS. 29A and 29B illustrate side views of various examples of 3D memorydevices 2800 and 2801 in FIGS. 28A and 28B, according to various aspectsof the present disclosure. As shown in FIG. 29A, as one example of 3Dmemory devices 2800 and 2801 in FIGS. 28A and 28B, 3D memory device 2900is a bonded chip including first semiconductor structure 102, secondsemiconductor structure 104, and third semiconductor structure 106,which are stacked over one another in different planes in the verticaldirection (e.g., the y-direction in FIG. 29A), according to someimplementations. First and second semiconductor structures 102 and 104are bonded at bonding interface 103 therebetween, and second and thirdsemiconductor structures 104 and 106 are bonded at bonding interface 105therebetween, according to some implementations.

As shown in FIG. 29A, first semiconductor structure 102 can includesemiconductor layer 1002 having semiconductor materials. In someimplementations, semiconductor layer 1006 is a silicon substrate havingsingle crystalline silicon. First semiconductor structure 102 caninclude a memory cell array, such as an array of NAND memory strings 208on semiconductor layer 1002. The sources of NAND memory strings 208 canbe in contact with semiconductor layer 1002. In some implementations,NAND memory strings 208 are disposed vertically between bondinginterface 103 and semiconductor layer 1002. Each NAND memory string 208extends vertically through a plurality of pairs each including aconductive layer and a dielectric layer, according to someimplementations. The stacked and interleaved conductive layers anddielectric layers are also referred to herein as a stack structure,e.g., a memory stack 2927. Memory stack 2927 may be an example of memorystack 804 in FIGS. 8A-8C, and the conductive layer and dielectric layerin memory stack 2927 may be examples of gate conductive layers 806 anddielectric layer 808, respectively, in memory stack 804. The interleavedconductive layers and dielectric layers in memory stack 2927 alternatein the vertical direction, according to some implementations. Eachconductive layer can include a gate electrode (gate line) surrounded byan adhesive layer and a gate dielectric layer. The gate electrode of theconductive layer can extend laterally as a word line, ending at one ormore staircase structures of memory stack 2927. It is understood that insome examples, trench isolations and doped regions (not shown) may beformed in semiconductor layer 1002 as well.

In some implementations, each NAND memory string 208 is a “charge trap”type of NAND memory string including any suitable channel structuresdisclosed herein, such as bottom plug channel structure 812A, sidewallplug channel structure 812B, or bottom open channel structure 812C,described above in detail with respect to FIGS. 8A-8C. It is understoodthat NAND memory strings 208 are not limited to the “charge trap” typeof NAND memory strings and may be “floating gate” type of NAND memorystrings in other examples.

As shown in FIG. 29A, first semiconductor structure 102 can furtherinclude an interconnect layer 2928 above and in contact with NAND memorystrings 208 to transfer electrical signals to and from NAND memorystrings 208. Interconnect layer 2928 can include a plurality ofinterconnects, such as MEOL interconnects and BEOL interconnects. Insome implementations, the interconnects in interconnect layer 2928 alsoinclude local interconnects, such as bit line contacts and word linecontacts. Interconnect layer 2928 can further include one or more ILDlayers in which the lateral lines and vias can form. The interconnectsin interconnect layer 2928 can include conductive materials including,but not limited to 2928 W, Co, Cu, Al, silicides, or any combinationthereof. The ILD layers in interconnect layer 1128 can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof.

Second semiconductor structure 104 can be bonded on top of firstsemiconductor structure 102 in a back-to-face manner at bondinginterface 103. Second semiconductor structure 104 can includesemiconductor layer 1004 having semiconductor materials. In someimplementations, semiconductor layer 1004 is a layer of singlecrystalline silicon transferred from a silicon substrate or a SOIsubstrate and attached to the top surface of first semiconductorstructure 102 by transfer bonding. In some implementations, bondinginterface 103 is disposed vertically between interconnect layer 2928 andsemiconductor layer 1004 as a result of transfer bonding, whichtransfers semiconductor layer 1004 from another substrate and bondssemiconductor layer 1004 onto first semiconductor structure 102 asdescribed below in detail. In some implementations, bonding interface103 is the place at which interconnect layer 2928 and semiconductorlayer 1004 are met and bonded. In practice, bonding interface 103 can bea layer with a certain thickness that includes the top surface ofinterconnect layer 2928 of first semiconductor structure 102 and thebottom surface of semiconductor layer 1004 of second semiconductorstructure 104. In some implementations, dielectric layer(s) (e.g.,silicon oxide layer) are formed vertically between bonding interface 105and semiconductor layer 1004 and/or between bonding interface 105 andinterconnect layer 2928 to facilitate the transfer bonding ofsemiconductor layer 1004 onto interconnect layer 1112. Thus, it isunderstood that bonding interface 103 may include the surfaces of thedielectric layer(s) in some examples.

As shown in FIG. 29A, second semiconductor structure 104 can alsoinclude a device layer 2914 above and in contact with semiconductorlayer 1006. In some implementations, device layer 2914 includes a firstperipheral circuit 2916 and a second peripheral circuit 2918. Firstperipheral circuit 2916 can include HV circuits 406, such as drivingcircuits (e.g., string drivers 704 in row decoder/word line driver 308and drivers in column decoder/bit line driver 306), and secondperipheral circuit 2918 can include LV circuits 404, such as page buffercircuits (e.g., page buffer circuits 702 in page buffer 304) and logiccircuits (e.g., in control logic 312). In some implementations, firstperipheral circuit 2916 includes a plurality of transistors 2920 incontact with semiconductor layer 1004, and second peripheral circuit2918 includes a plurality of transistors 2922 in contact withsemiconductor layer 1006. Transistors 2920 and 2922 can include anytransistors disclosed herein, such as planar transistors 500 and 3Dtransistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 2920or 2922 includes a gate dielectric, and the thickness of the gatedielectric of transistor 2920 (e.g., in HV circuit 406) is larger thanthe thickness of the gate dielectric of transistor 2922 (e.g., in LVcircuit 404) due to the higher voltage applied to transistor 2920 thantransistor 2922. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 2920 and 2922) can be formedon or in semiconductor layer 1004 as well.

In some implementations, second semiconductor structure 104 furtherincludes an interconnect layer 2926 above device layer 2914 to transferelectrical signals to and from peripheral circuits 2916 and 2918. Asshown in FIG. 29A, interconnect layer 2926 can be vertically betweenbonding interface 105 and device layer 2914 (including transistors 2920and 2922 of peripheral circuits 2916 and 2918). Interconnect layer 2926can include a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. The interconnects in interconnect layer 2926 can becoupled to transistors 2920 and 2922 of peripheral circuits 2916 and2918 in device layer 2914. Interconnect layer 2926 can further includeone or more ILD layers in which the lateral lines and vias can form.That is, interconnect layer 2926 can include lateral lines and vias inmultiple ILD layers. In some implementations, the devices in devicelayer 2914 are coupled to one another through the interconnects ininterconnect layer 2926. For example, peripheral circuit 2916 may becoupled to peripheral circuit 2918 through interconnect layer 2926. Theinterconnects in interconnect layer 2926 can include conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof. The ILD layers in interconnect layer 2926 caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some implementations, the interconnects ininterconnect layer 2926 include W, which has a relatively high thermalbudget (compatible with high-temperature processes) and good quality(fewer detects, e.g., voids) among conductive metal materials.

As shown in FIG. 29A, second semiconductor structure 104 can furtherinclude one or more contacts 2924 extending vertically throughsemiconductor layer 1004. In some implementations, contact 2924 couplesthe interconnects in interconnect layer 2926 to the interconnects ininterconnect layer 2928 to make an electrical connection across bondinginterface 103 between second and first semiconductor structures 104 and102. Contact 2924 can include conductive materials including, but notlimited to, W, Co, Cu, Al, silicides, or any combination thereof. Insome implementations, contact 2924 includes W. In some implementations,contact 2924 includes a via surrounded by a dielectric spacer (e.g.,having silicon oxide) to electrically separate the via fromsemiconductor layer 1004. Depending on the thickness of semiconductorlayer 1004, contact 2924 can be an ILV having a depth in thesubmicron-level (e.g., between 10 nm and 1 μm), or a TSV having a depthin the micron- or tens micron-level (e.g., between 1 μm and 100 μm).

Third semiconductor structure 106 can be bonded on top of secondsemiconductor structure 104 in a back-to-face manner at bondinginterface 105. Third semiconductor structure 106 can includesemiconductor layer 1006 having semiconductor materials. In someimplementations, semiconductor layer 1006 is a layer of singlecrystalline silicon transferred from a silicon substrate or an SOIsubstrate and attached to the top surface of second semiconductorstructure 104 by transfer bonding. In some implementations, bondinginterface 105 is disposed vertically between interconnect layer 2926 andsemiconductor layer 1006 as a result of transfer bonding, whichtransfers semiconductor layer 1006 from another substrate and bondssemiconductor layer 1006 onto second semiconductor structure 104 asdescribed below in detail. In some implementations, bonding interface105 is the place at which interconnect layer 2926 and semiconductorlayer 1006 are met and bonded. In practice, bonding interface 105 can bea layer with a certain thickness that includes the top surface ofinterconnect layer 2926 of second semiconductor structure 104 and thebottom surface of semiconductor layer 1006 of third semiconductorstructure 106. In some implementations, dielectric layer(s) (e.g.,silicon oxide layer) are formed vertically between bonding interface 105and semiconductor layer 1006 and/or between bonding interface 105 andinterconnect layer 2926 to facilitate the transfer bonding ofsemiconductor layer 1006 onto interconnect layer 2926. Thus, it isunderstood that bonding interface 105 may include the surfaces of thedielectric layer(s) in some examples.

Third semiconductor structure 106 can include a device layer 2902 aboveand in contact with semiconductor layer 1006. In some implementations,device layer 2902 includes a third peripheral circuit 2904 and a fourthperipheral circuit 2906. Third peripheral circuit 2904 can include LLVcircuits 402, such as I/O circuits (e.g., in interface 316 and data bus318), and fourth peripheral circuit 2906 can include LV circuits 404,such as page buffer circuits (e.g., page buffer circuits 702 in pagebuffer 304) and logic circuits (e.g., in control logic 312). In someimplementations, third peripheral circuit 2904 includes a plurality oftransistors 2908, and fourth peripheral circuit 2906 includes aplurality of transistors 2910 as well. Transistors 2908 and 2910 caninclude any transistors disclosed herein, such as planar transistors 500and 3D transistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 2908or 2910 includes a gate dielectric, and the thickness of the gatedielectric of transistor 2908 (e.g., in LLV circuit 402) is smaller thanthe thickness of the gate dielectric of transistor 2910 (e.g., in LVcircuit 404) due to the lower voltage applied to transistor 2908 thantransistor 2910. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 2908 and 2910) can be formedon or in semiconductor layer 1006 as well.

Moreover, the different voltages applied to different transistors 2920,2922, 2908, and 2910 in second and third semiconductor structures 104and 106 can lead to differences of device dimensions between second andthird semiconductor structures 104 and 106. In some implementations, thethickness of the gate dielectric of transistor 2920 (e.g., in HV circuit406) is larger than the thickness of the gate dielectric of transistor2908 (e.g., in LLV circuit 402) due to the higher voltage applied totransistor 2920 than transistor 2908. In some implementations, thethickness of the gate dielectric of transistor 2922 (e.g., in LV circuit404) is the same as the thickness of the gate dielectric of transistor2910 (e.g., in LV circuit 404) due to the same voltage applied totransistor 2922 and transistor 2910. In some implementations, thethickness of semiconductor layer 1004 in which transistor 2920 (e.g., inHV circuit 406) is formed is larger than the thickness of semiconductorlayer 1006 in which transistor 2908 (e.g., in LLV circuit 402) is formeddue to the higher voltage applied to transistor 2920 than transistor2908.

As shown in FIG. 29A, third semiconductor structure 106 can furtherinclude an interconnect layer 2912 above device layer 2902 to transferelectrical signals to and from peripheral circuits 2904 and 2906. Asshown in FIG. 29A, device layer 1114 (including transistors 1120 and1122 of peripheral circuits 1116 and 1118) can be vertically betweenbonding interface 105 and interconnect layer 2912. Interconnect layer2912 can include a plurality of interconnects coupled to transistors2908 and 2910 of peripheral circuits 2904 and 2906 in device layer 2902.Interconnect layer 2912 can further include one or more ILD layers inwhich the interconnects can form. That is, interconnect layer 2912 caninclude lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 2902 are coupled to oneanother through the interconnects in interconnect layer 2912. Forexample, peripheral circuit 2904 may be coupled to peripheral circuit2906 through interconnect layer 2912. The interconnects in interconnectlayer 2912 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 1126 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof.

In some implementations, the interconnects in interconnect layer 2912include Cu, which has a relatively low resistivity (better electricalperformance) among conductive metal materials. As described below withrespect to the fabrication process, although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), since thefabrication of interconnect layer 2912 can occur after thehigh-temperature processes in forming device layers 1114 and 1102 insecond and third semiconductor structures 104 and 106, as well as afterthe high-temperature processes in forming first semiconductor structure102, the interconnects of interconnect layer 2912 having Cu can becomefeasible. In some implementations, the interconnects in interconnectlayer 2912 includes Cu as the conductive metal material, but not otherconductive metal materials, such as W.

As shown in FIG. 29A, third semiconductor structure 106 can furtherinclude one or more contacts 2925 extending vertically throughsemiconductor layer 1006. In some implementations, contact 2925 couplesthe interconnects in interconnect layer 2912 to the interconnects ininterconnect layer 2926 to make an electrical connection across bondinginterface 105 between second and third semiconductor structures 104 and106. Contact 2925 can include conductive materials including, but notlimited to, W, Co, Cu, Al, silicides, or any combination thereof. Insome implementations, contact 2925 includes Cu. For example, contact2925 may include Cu as the conductive metal material, but not otherconductive metal materials, such as W. In some implementations, contact2925 includes a via surrounded by a dielectric spacer (e.g., havingsilicon oxide) to electrically separate the via from semiconductor layer1006. Depending on the thickness of semiconductor layer 1006, contact2925 can be an ILV having a depth in the submicron-level (e.g., between10 nm and 1 μm), or a TSV having a depth in the micron- or tensmicron-level (e.g., between 1 μm and 100 μm).

As shown in FIG. 29A, third semiconductor structure 106 can furtherinclude a pad-out interconnect layer 902 above and in contact withinterconnect layer 2912. In some implementations, interconnect layer2912 is disposed vertically between pad-out interconnect layer 902 anddevice layer 2902 including transistors 2908 and 2910. Pad-outinterconnect layer 902 can include interconnects, e.g., contact pads2932, in one or more ILD layers. In some implementations, theinterconnects in pad-out interconnect layer 902 can transfer electricalsignals between 3D memory device 2900 and external devices, e.g., forpad-out purposes.

As a result, peripheral circuits 2904, 2906, 2916, and 2918 in third andsecond semiconductor structures 106 and 104 can be coupled to NANDmemory strings 208 in first semiconductor structure 102 through variousinterconnection structures, including interconnect layers 2912, 2926,and 2928, as well as contacts 2925 and 2924. Moreover, peripheralcircuits 2904, 2906, 2916, and 2918 and NAND memory strings 208 in 3Dmemory device 2900 can be further coupled to external devices throughpad-out interconnect layer 902.

It is understood that the material of semiconductor layer 1002 in firstsemiconductor structure 102 is not limited to single crystalline siliconas described above with respect to FIG. 29A and may be any othersuitable semiconductor materials. For example, as shown in FIG. 29B, a3D memory device 2901 may include semiconductor layer 1002 havingpolysilicon in first semiconductor structure 102. NAND memory strings208 of 3D memory device 2901 in contact with semiconductor layer 1002having polysilicon can include any suitable channel structures disclosedherein that are in contact with a polysilicon layer, such as bottom openchannel structure 812C. In some implementations, NAND memory strings 208of 3D memory device 2901 are “floating gate” type of NAND memorystrings, and semiconductor layer 1002 having polysilicon is in contactwith the “floating gate” type of NAND memory strings as the source platethereof.

It is also understood that the pad-out of 3D memory devices is notlimited to from third semiconductor structure 106 having peripheralcircuits 2904 and 2906 as shown in FIG. 29A (corresponding to FIG. 9A)and may be from first semiconductor structure 102 having NAND memorystrings 208 (corresponding to FIG. 9B). For example, as shown in FIG.29B, 3D memory device 2901 may include pad-out interconnect layer 902 infirst semiconductor structure 102. Pad-out interconnect layer 902 can bein contact with semiconductor layer 1002 of first semiconductorstructure 102 on which NAND memory strings 208 are formed. In someimplementations, first semiconductor structure 102 further includes oneor more contacts 2934 extending vertically through semiconductor layer1002. In some implementations, contact 2934 couples the interconnects ininterconnect layer 2928 in first semiconductor structure 102 to contactpads 2932 in pad-out interconnect layer 902 to make an electricalconnection through semiconductor layer 1002. Contact 2934 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, contact2934 includes W. In some implementations, contact 2934 includes a viasurrounded by a dielectric spacer (e.g., having silicon oxide) toelectrically separate the via from semiconductor layer 1002. Dependingon the thickness of semiconductor layer 1002, contact 2934 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm). It is understood that the details of the samecomponents (e.g., materials, fabrication process, functions, etc.) inboth 3D memory devices 2900 and 2901 are not repeated for ease ofdescription.

Although not shown in FIGS. 29A and 29B, it is understood that in someexamples, bonding interface 105 may result from hybrid bonding and thus,be disposed vertically between two bonding layers each including bondingcontacts in second and third semiconductor structures 104 and 106,respectively, as described above in detail. Similarly, in some examples,bonding interface 103 may result from hybrid bonding and thus, bedisposed vertically between two bonding layers each including bondingcontacts in second and first semiconductor structures 104 and 102,respectively, as described above in detail.

FIGS. 30A-30F illustrate a fabrication process for forming the 3D memorydevices in FIGS. 28A and 28B, according to some aspects of the presentdisclosure. FIG. 32 illustrates a flowchart of a method 3200 for formingthe 3D memory devices in FIGS. 28A and 28B, according to some aspects ofthe present disclosure. Examples of the 3D memory devices depicted inFIGS. 30A-30F and 32 include 3D memory devices 2900 and 2901 depicted inFIGS. 29A and 29B. FIGS. 30A-30F and 32 will be described together. Itis understood that the operations shown in method 3200 are notexhaustive and that other operations can be performed as well before,after, or between any of the illustrated operations. Further, some ofthe operations may be performed simultaneously, or in a different orderthan shown in FIG. 32 .

Referring to FIG. 32 , method 3200 starts at operation 3202, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 30A, a stack structure, such as a memory stack3026 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 3024. To form memory stack 3026, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 3024. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 3026 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 3026 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 3026 and silicon substrate 3024.

As illustrated in FIG. 30A, NAND memory strings 3028 are formed abovesilicon substrate 3024, each of which extends vertically through memorystack 3026 to be in contact with silicon substrate 3024. In someimplementations, fabrication processes to form NAND memory string 3028include forming a channel hole through memory stack 3026 (or thedielectric stack) and into silicon substrate 3024 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 3028 may vary depending on the typesof channel structures of NAND memory strings 3028 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 30A, an interconnect layer 3030 is formedabove memory stack 3026 and NAND memory strings 3028. Interconnect layer3030 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 3028. Insome implementations, interconnect layer 3030 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 3030 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 30A can be collectively referred to as interconnect layer 3030.

Method 3200 proceeds to operation 3204, as illustrated in FIG. 32 , inwhich a first semiconductor layer is formed above the array of NANDmemory strings. The first semiconductor layer can include singlecrystalline silicon. In some implementations, to form the firstsemiconductor layer, another substrate and the first substrate arebonded in a face-to-face manner, and the other substrate is thinned toleave the first semiconductor layer. The bonding can include transferbonding. The other substrate can be a silicon substrate having singlecrystalline silicon.

As illustrated in FIG. 30B, a semiconductor layer 3010, such as a singlecrystalline silicon layer, is formed above interconnect layer 3030 andNAND memory strings 3028. Semiconductor layer 3010 can be attached aboveinterconnect layer 3030 to form a bonding interface 3012 verticallybetween semiconductor layer 3010 and interconnect layer 3030. In someimplementations, to form semiconductor layer 3010, another siliconsubstrate (not shown in FIG. 30B) and silicon substrate 3024 are bondedin a face-to-face manner (having the components formed on siliconsubstrate 3024, such as NAND memory strings 3028, facing toward theother silicon substrate) using transfer bonding, thereby forming bondinginterface 3012. The other silicon substrate can then be thinned usingany suitable processes to leave semiconductor layer 3010 attached aboveinterconnect layer 3030. The details of various transfer bondingprocesses are described above with respect to FIGS. 48A-48D and FIGS.49A-49D and thus, are not repeated for ease of description.

Referring to FIG. 32 , method 3200 proceeds to operation 3206 in which afirst transistor is formed on the first semiconductor layer. Asillustrated in FIG. 30C, a plurality of transistors 3014 and 3016 areformed on semiconductor layer 3010 having single crystalline silicon.Transistors 3014 and 3016 can be formed by a plurality of processesincluding, but not limited to, photolithography, dry/wet etch, thin filmdeposition, thermal growth, implantation, CMP, and any other suitableprocesses. In some implementations, doped regions are formed insemiconductor layer 3010 by ion implantation and/or thermal diffusion,which function, for example, as wells and source/drain regions oftransistors 3014 and 3016. In some implementations, isolation regions(e.g., STIs) are also formed in semiconductor layer 3010 by wet/dry etchand thin film deposition. In some implementations, the thickness of gatedielectric of transistor 3014 is different from the thickness of gatedielectric of transistor 3016, for example, by depositing a thickersilicon oxide film in the region of transistor 3014 than the region oftransistor 3016, or by etching back part of the silicon oxide filmdeposited in the region of transistor 3016. It is understood that thedetails of fabricating transistors 3014 and 3016 may vary depending onthe types of the transistors (e.g., planar transistors 500 or 3Dtransistors 600 in FIGS. 5A, 5B, 6A, and 6B) and thus, are notelaborated for ease of description.

In some implementations, an interconnect layer 3020 is formed above thetransistor on the semiconductor layer. The interconnect layer caninclude a plurality of interconnects in one or more ILD layers. Asillustrated in FIG. 30C, an interconnect layer 3020 can be formed abovetransistors 3014 and 3016. Interconnect layer 3020 can includeinterconnects of MEOL and/or BEOL in a plurality of ILD layers to makeelectrical connections with transistors 3014 and 3016. In someimplementations, interconnect layer 3020 includes multiple ILD layersand interconnects therein formed in multiple processes. For example, theinterconnects in interconnect layer 3020 can include conductivematerials deposited by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 30C can be collectively referred to as interconnect layer 3020.

In some implementations, a contact through the semiconductor layer isformed. As illustrated in FIG. 30C, one or more contacts 3018 eachextending vertically through semiconductor layer 3010 is formed.Contacts 3018 can couple the interconnects in interconnect layers 3020and 3030. Contacts 3018 can be formed by first patterning contact holesthrough semiconductor layer 3010 using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor.

Method 3200 proceeds to operation 3208, as illustrated in FIG. 32 , inwhich a second semiconductor layer is formed above the first transistor.The second semiconductor layer can include single crystalline silicon.In some implementations, to form the second semiconductor layer, anothersubstrate and the first substrate are bonded in a face-to-face manner,and the other substrate is thinned to leave the second semiconductorlayer. The bonding can include transfer bonding. The other substrate canbe a silicon substrate having single crystalline silicon.

As illustrated in FIG. 30D, a semiconductor layer 3002, such as a singlecrystalline silicon layer, is formed above interconnect layer 3020 andtransistors 3014 and 3016. Semiconductor layer 3002 can be attachedabove interconnect layer 3020 to form a bonding interface 3034vertically between semiconductor layer 3002 and interconnect layer 3020.In some implementations, to form semiconductor layer 3002, anothersilicon substrate (not shown in FIG. 30D) and silicon substrate 3024 arebonded in a face-to-face manner (having the components formed on siliconsubstrate 3024, such as NAND memory strings 3028 and transistors 3014and 3016, facing toward the other silicon substrate) using transferbonding, thereby forming bonding interface 3034. The other siliconsubstrate can then be thinned using any suitable processes to leavesemiconductor layer 3002 attached above interconnect layer 3020. Thedetails of various transfer bonding processes are described above withrespect to FIGS. 48A-48D and FIGS. 49A-49D and thus, are not repeatedfor ease of description.

Referring to FIG. 32 , method 3200 proceeds to operation 3206 in which asecond transistor is formed on the second semiconductor layer. Asillustrated in FIG. 30E, a plurality of transistors 3004 and 3006 areformed on semiconductor layer 3002 having single crystalline silicon.Transistors 3004 and 3006 can be formed by a plurality of processesincluding, but not limited to, photolithography, dry/wet etch, thin filmdeposition, thermal growth, implantation, CMP, and any other suitableprocesses. In some implementations, doped regions are formed insemiconductor layer 3002 by ion implantation and/or thermal diffusion,which function, for example, as wells and source/drain regions oftransistors 3004 and 3006. In some implementations, isolation regions(e.g., STIs) are also formed in semiconductor layer 3002 by wet/dry etchand thin film deposition. In some implementations, the thickness of gatedielectric of transistor 3004 is different from the thickness of gatedielectric of transistor 3006, for example, by depositing a thickersilicon oxide film in the region of transistor 3004 than the region oftransistor 3006, or by etching back part of the silicon oxide filmdeposited in the region of transistor 3006. It is understood that thedetails of fabricating transistors 3004 and 3006 may vary depending onthe types of the transistors (e.g., planar transistors 500 or 3Dtransistors 600 in FIGS. 5A, 5B, 6A, and 6B) and thus, are notelaborated for ease of description.

In some implementations, an interconnect layer 3008 is formed above thetransistor on the semiconductor layer. The interconnect layer caninclude a plurality of interconnects in one or more ILD layers. Asillustrated in FIG. 30E, an interconnect layer 3008 can be formed abovetransistors 3004 and 3006. Interconnect layer 3008 can includeinterconnects of MEOL and/or BEOL in a plurality of ILD layers to makeelectrical connections with transistors 3004 and 3006. In someimplementations, interconnect layer 3008 includes multiple ILD layersand interconnects therein formed in multiple processes. For example, theinterconnects in interconnect layer 3008 can include conductivematerials deposited by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 30C can be collectively referred to as interconnect layer 3008.Different from interconnect layer 3020, in some implementations, theinterconnects in interconnect layer 3008 include Cu, which has arelatively low resistivity among conductive metal materials. It isunderstood that although Cu has a relatively low thermal budget(incompatible with high-temperature processes), using Cu as theconductive materials of the interconnects in interconnect layer 3008 maybecome feasible since there are no more high-temperature processes afterthe fabrication of interconnect layer 3008.

In some implementations, a contact through the semiconductor layer isformed. As illustrated in FIG. 30E, one or more contacts 3019 eachextending vertically through semiconductor layer 3002 is formed.Contacts 3019 can couple the interconnects in interconnect layers 3008and 3020. Contacts 3019 can be formed by first patterning contact holesthrough semiconductor layer 3002 using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a spacer (e.g., a silicon oxide layer) before depositing theconductor.

Method 3200 skips optional operation 3212 and proceeds to operation3214, as illustrated in FIG. 32 , in which a pad-out interconnect layeris formed. The pad-out interconnect layer can be formed above the secondtransistor. As illustrated in FIG. 30F, a pad-out interconnect layer3036 is formed above interconnect layer 3008 and transistors 3004 and3006 on semiconductor layer 3002. Pad-out interconnect layer 3036 caninclude interconnects, such as contact pads 3038, formed in one or moreILD layers. Contact pads 3038 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, doped silicon, silicides,or any combination thereof. The ILD layers can include dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof.

In some implementations, to form a pad-out interconnect layer on thefirst substrate, after operation 3210, method 3200 proceeds to optionaloperation 3212, as illustrated in FIG. 32 , in which the first substrateis thinned. It is understood that although not shown, in some examples,silicon substrate 3024 (shown in FIG. 30E) may be thinned to become asemiconductor layer having single crystalline silicon using processesincluding, but not limited to, wafer grinding, dry etch, wet etch, CMP,any other suitable processes, or any combination thereof. After thethinning, contacts may be formed extending vertically through thethinned silicon substrate 3024, for example, by wet/dry etching followedby depositing dielectric materials as spacers and conductive materialsas conductors. It is understood that in some examples, the contacts maybe formed in silicon substrate 3024 before thinning and be exposed fromthe backside of silicon substrate 3024 (where the thinning occurs) afterthe thinning.

Method 3200 proceeds to operation 3214, as illustrated in FIG. 32 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned first substrate. It is understoodthat although not shown, in some examples, a pad-out interconnect layerhaving contact pads may be formed on the thinned silicon substrate 3024.

FIGS. 31A-31F illustrate another fabrication process for forming the 3Dmemory devices in FIGS. 28A and 28B, according to some aspects of thepresent disclosure. FIG. 33 illustrates a flowchart of another method3300 for forming the 3D memory devices in FIGS. 28A and 28B, accordingto some aspects of the present disclosure. Examples of the 3D memorydevices depicted in FIGS. 31A-31F and 33 include 3D memory devices 2900and 2901 depicted in FIGS. 29A and 29B. FIGS. 31A-31F and 33 will bedescribed together. It is understood that the operations shown in method3300 are not exhaustive and that other operations can be performed aswell before, after, or between any of the illustrated operations.Further, some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 33 . For example, operation 3302,3304, and 3306 may be performed in parallel.

Referring to FIG. 33 , method 3300 starts at operation 3302, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 31A, a stack structure, such as a memory stack3104 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 3102. To form memory stack 3104, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 3102. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 3104 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 3104 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 3104 and silicon substrate 3102.

As illustrated in FIG. 31A, NAND memory strings 3106 are formed abovesilicon substrate 3102, each of which extends vertically through memorystack 3104 to be in contact with silicon substrate 3102. In someimplementations, fabrication processes to form NAND memory string 3106include forming a channel hole through memory stack 3104 (or thedielectric stack) and into silicon substrate 3102 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 3106 may vary depending on the typesof channel structures of NAND memory strings 3106 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 31A, an interconnect layer 3108 is formedabove memory stack 3104 and NAND memory strings 3106. Interconnect layer3108 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 3106. Insome implementations, interconnect layer 3108 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 3108 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 31A can be collectively referred to as interconnect layer 3108.

Method 3300 proceeds to operation 3304, as illustrated in FIG. 33 , inwhich a first transistor is formed on a second substrate. The secondsubstrate can be a silicon substrate having single crystalline silicon.As illustrated in FIG. 31B, a plurality of transistors 3114 and 3116 areformed on a silicon substrate 3112. Transistors 3114 and 3116 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 3112 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 3114 and 3116. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 3112 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 3114 isdifferent from the thickness of gate dielectric of transistor 3116, forexample, by depositing a thicker silicon oxide film in the region oftransistor 3114 than the region of transistor 3116, or by etching backpart of the silicon oxide film deposited in the region of transistor3116. It is understood that the details of fabricating transistors 3114and 3116 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 3118 is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 31B, an interconnect layer 3118 can be formed above transistors3114 and 3116. Interconnect layer 3118 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 3114 and 3116. In some implementations, interconnectlayer 3118 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 3118 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 31B can be collectively referred to as interconnectlayer 3118.

Method 3300 proceeds to operation 3306, as illustrated in FIG. 33 , inwhich a second transistor is formed on a third substrate. The thirdsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, any two or all of operations 3302, 3304, and3306 are performed in parallel to reduce process time.

As illustrated in FIG. 31C, a plurality of transistors 3124 and 3126 areformed on a silicon substrate 3122. Transistors 3124 and 3126 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 3122 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 3124 and 3126. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 3122 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 3124 isdifferent from the thickness of gate dielectric of transistor 3126, forexample, by depositing a thicker silicon oxide film in the region oftransistor 3124 than the region of transistor 3126, or by etching backpart of the silicon oxide film deposited in the region of transistor3126. It is understood that the details of fabricating transistors 3124and 3126 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 3128 is formed above thetransistor on the third substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 31C, an interconnect layer 3128 can be formed above transistors3124 and 3126. Interconnect layer 3128 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 3124 and 3126. In some implementations, interconnectlayer 3128 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 1928 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 31C can be collectively referred to as interconnectlayer 3128.

In some implementations, at least one of the second substrate or thethird substrate is thinned. As illustrated in FIG. 31D, siliconsubstrate 3112 (shown in FIG. 31B) is thinned to become a semiconductorlayer 3135 having single crystalline silicon. Similarly, as illustratedin FIG. 31E, silicon substrate 3122 (shown in FIG. 31C) is thinned tobecome a semiconductor layer 3123 having single crystalline silicon.Silicon substrate 3112 or 3122 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof. In some implementations,handle substrates (not shown) are attached to interconnect layers 3118and 3128, for example, using adhesive bonding, prior to the thinning toallow the subsequent backside processes on silicon substrates 3112 and3122, such as thinning, contact formation, and bonding.

In some implementations, a first contact through the thinned secondsubstrate and coupled to the interconnect layer is formed. In someimplementations, a second contact through the thinned third substrateand coupled to the interconnect layer is formed. As illustrated in FIG.31D, one or more contacts 3136 each extending vertically throughsemiconductor layer 3135 (i.e., the thinned silicon substrate 3112) areformed. Contacts 3136 can be coupled to the interconnects ininterconnect layer 3118. Similarly, as illustrated in FIG. 31E, one ormore contacts 3137 each extending vertically through semiconductor layer3123 (i.e., the thinned silicon substrate 3122) are formed. Contacts3137 can be coupled to the interconnects in interconnect layer 3128.Contact 3137 or 3136 can be formed by first patterning contact holesthrough semiconductor layer 3123 or 3135 using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor. It is understood that in some examples,contacts 3136 may be formed in silicon substrate 3112 before thinning(the formation of semiconductor layer 3135, e.g., in FIG. 31B) and beexposed from the backside of silicon substrate 3112 (where the thinningoccurs) after the thinning. Similarly, contacts 3137 may be formed insilicon substrate 3122 before thinning (the formation of semiconductorlayer 3123, e.g., in FIG. 31C) and be exposed from the backside ofsilicon substrate 3122 (where the thinning occurs) after the thinning.

Method 3300 proceeds to operation 3308, as illustrated in FIG. 33 , inwhich the first substrate and the second substrate are bonded in aface-to-back manner. As illustrated in FIG. 31D, silicon substrate 3102and components formed thereon (e.g., memory stack 3104 and NAND memorystrings 3106) is bonded to thinned silicon substrate 3112 (i.e.,semiconductor layer 3135) and components formed thereon (e.g.,transistors 3114 and 3116) in a face-to-back manner, i.e., the frontsideof silicon substrate 3102 facing toward the backside of thinned siliconsubstrate 3112, to form a bonding interface 3132. The bonding can beperformed using fusion bonding or anodic bonding depending on thematerials at bonding interface 3132, e.g., SiO₂—Si or SiO₂—SiO₂. As aresult of the bonding, contacts 3136 couple the interconnects ininterconnect layer 3118 to the interconnects in interconnect layer 3108.

Method 3300 proceeds to operation 3310, as illustrated in FIG. 33 , inwhich the second substrate and the third substrate are bonded in aface-to-back manner. As illustrated in FIG. 31E, thinned siliconsubstrate 3112 (i.e., semiconductor layer 3135) and components formedthereon (e.g., transistors 3114 and 3116) is bonded to thinned siliconsubstrate 3122 (i.e., semiconductor layer 3123) and components formedthereon (e.g., transistors 3124 and 3126) in a face-to-back manner,i.e., the frontside of thinned silicon substrate 3112 facing toward thebackside of thinned silicon substrate 3122, to form a bonding interface3140. The bonding can be performed using fusion bonding or anodicbonding depending on the materials at bonding interface 3140, e.g.,SiO₂—Si or SiO₂—SiO₂. As a result of the bonding, contacts 3137 couplethe interconnects in interconnect layer 3128 to the interconnects ininterconnect layer 3118. It is understood that the sequence of bondingsilicon substrates 3102, 3112, and 3222 may switch to any suitable orderin other examples.

Method 3300 skips optional operation 3312 and proceeds to operation3314, as illustrated in FIG. 33 , in which a pad-out interconnect layeris formed. The pad-out interconnect layer can be formed above the secondtransistor. As illustrated in FIG. 31F, a pad-out interconnect layer3146 is formed above interconnect layer 3128 and transistors 3124 and3126 on semiconductor layer 3123. Pad-out interconnect layer 3146 caninclude interconnects, such as contact pads 3148, formed in one or moreILD layers. Contact pads 3148 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, doped silicon, silicides,or any combination thereof. The ILD layers can include dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof.

In some implementations, to form a pad-out interconnect layer on thefirst substrate, after operation 3310, method 3300 proceeds to optionaloperation 3312, as illustrated in FIG. 33 , in which the first substrateis thinned. It is understood that although not shown, in some examples,silicon substrate 3102 (shown in FIG. 31E) may be thinned to become asemiconductor layer having single crystalline silicon using processesincluding, but not limited to, wafer grinding, dry etch, wet etch, CMP,any other suitable processes, or any combination thereof. After thethinning, contacts may be formed extending vertically through thethinned silicon substrate 3102, for example, by wet/dry etching followedby depositing dielectric materials as spacers and conductive materialsas conductors. It is understood that in some examples, the contacts maybe formed in silicon substrate 3102 before thinning and be exposed fromthe backside of silicon substrate 3102 (where the thinning occurs) afterthe thinning.

Method 3300 proceeds to operation 3314, as illustrated in FIG. 33 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned first substrate. It is understoodthat although not shown, in some examples, a pad-out interconnect layerhaving contact pads may be formed on the thinned silicon substrate 3102.

FIGS. 34A and 34B illustrate schematic views of cross-sections of 3Dmemory devices 3400 and 3401 having three stacked semiconductorstructures, according to various aspects of the present disclosure. 3Dmemory devices 3400 and 3401 may be examples of 3D memory device 101 inFIG. 1B in which first semiconductor structure 102 including the memorycell array is disposed vertically between second semiconductor structure104 including some of the peripheral circuits and third semiconductorstructure 106 including some of the peripheral circuits. In other words,as shown in FIGS. 34A and 34B, first semiconductor structure 102including the memory cell array of 3D memory devices 900 and 901 isdisposed in the intermediate of 3D memory devices 3400 and 3401, secondsemiconductor structure 104 including some of the peripheral circuits isdisposed on one side of 3D memory devices 3400 and 3401, and thirdsemiconductor structure 106 including some of the peripheral circuits isdisposed on another side of 3D memory devices 3400 and 3401 in thevertical direction, according to some implementations. Second and thirdsemiconductor structures 104 and 106 each including peripheral circuitscan be separated by first semiconductor structure 102 including thememory cell array in three stacked semiconductor structures 102, 104,and 106.

Moreover, as shown in FIGS. 34A and 34B, 3D memory device 3400 or 3401can further include a pad-out interconnect layer 902 for pad-outpurposes, i.e., interconnecting with external devices using contact padson which bonding wires can be soldered. In one example shown in FIG.34A, third semiconductor structure 106 including some of the peripheralcircuits on one side of 3D memory device 3400 may include pad-outinterconnect layer 902. In another example shown in FIG. 34B, secondsemiconductor structure 104 including some of the peripheral circuits onone side of 3D memory device 3401 may include pad-out interconnect layer902. In either example, 3D memory device 3400 or 3401 may be pad-outfrom one peripheral circuit side to reduce the interconnect distancebetween contact pads and the peripheral circuits, thereby decreasing theparasitic capacitance from the interconnects and improving theelectrical performance of 3D memory devices 3400 and 3401.

FIGS. 35A and 35B illustrate schematic views of cross-sections of 3Dmemory devices 3400 and 3401 in FIGS. 34A and 34B, according to someaspects of the present disclosure. 3D memory devices 3500 and 3501 maybe examples of 3D memory devices 3400 and 3401 in FIGS. 34A and 34B. Asshown in FIG. 35A, 3D memory device 3500 can include stacked first,second, and third semiconductor structures 102, 104, and 106. In someimplementations, first semiconductor structure 102 in the intermediateof 3D memory device 3500 includes semiconductor layer 1002, a bondinglayer 3502, and a memory cell array vertically between bonding layer3502 and semiconductor layer 1002. The memory cell array can include anarray of NAND memory strings (e.g., NAND memory strings 208 disclosedherein), and the sources of the array of NAND memory strings can be incontact with semiconductor layer 1002 (e.g., as shown in FIGS. 8A-8C).Semiconductor layer 1002 can include semiconductor materials, such assingle crystalline silicon (e.g., a silicon substrate or a thinnedsilicon substrate) or polysilicon (e.g., a deposited layer), forexample, depending on the types of channel structures of the NAND memorystrings (e.g., bottom plug channel structure 812A, sidewall plug channelstructure 812B, or bottom open channel structure 812C). Through contacts(e.g., ILVs/TSVs) can make direct, short-distance (e.g.,submicron-level) electrical connections through semiconductor layer1002. Bonding layer 3502 can include conductive bonding contacts (notshown) and dielectrics electrically isolating the bonding contacts,which can be used, for example, for hybrid bonding. In someimplementations, bonding layer 3502 is disposed vertically betweenbonding interface 3503 and the memory cell array in first semiconductorstructure 102.

In some implementations, second semiconductor structure 104 on one sideof 3D memory device 3500 includes a semiconductor layer 1004 and some ofthe peripheral circuits of the memory cell array. In someimplementations, semiconductor layer 1004 is disposed vertically betweenbonding interface 103 and the peripheral circuits of secondsemiconductor structure 104. The transistors (e.g., planar transistors500 and 3D transistors 600) of the peripheral circuits can be in contactwith semiconductor layer 1004. Semiconductor layer 1004 can includesemiconductor materials, such as single crystalline silicon (e.g., alayer transferred from a silicon substrate or an SOI substrate). It isunderstood that in some examples, different from semiconductor layer1002 in first semiconductor structure 102, semiconductor layer 1004 onwhich the transistors are formed may include single crystalline silicon,but not polysilicon, due to the superior carrier mobility of singlecrystalline silicon that is desirable for transistors' performance.Through contacts (e.g., ILVs/TSVs) can make direct, short-distance(e.g., submicron-level) electrical connections through semiconductorlayer 1004.

Bonding interface 103 is vertically between and in contact with bondinglayers 1008 and 1010, respectively, according to some implementations.Through contacts (e.g., ILVs/TSVs) through semiconductor layers 1002 and1004 and in contact with each other at bonding interface 103 can makedirect, short-distance (e.g., micron-level) electrical connectionsbetween adjacent semiconductor structures 102 and 104.

In some implementations, third semiconductor structure 106 on anotherside of 3D memory device 3500 includes a semiconductor layer 1006, abonding layer 1014, and some of the peripheral circuits of the memorycell array that are vertically between semiconductor layer 1006 andbonding interface 3503. The transistors (e.g., planar transistors 500and 3D transistors 600) of the peripheral circuits can be in contactwith semiconductor layer 1006. Semiconductor layer 1006 can includesemiconductor materials, such as single crystalline silicon (e.g., asilicon substrate or a thinned silicon substrate). It is understood thatin some examples, different from semiconductor layer 1002 in firstsemiconductor structure 102, semiconductor layer 1006 on which thetransistors are formed may include single crystalline silicon, but notpolysilicon, due to the superior carrier mobility of single crystallinesilicon that is desirable for transistors' performance. Bonding layer1014 can also include conductive bonding contacts (not shown) anddielectrics electrically isolating the bonding contacts, which can beused, for example, for hybrid bonding.

Bonding interface 3503 is vertically between and in contact with bondinglayers 3502 and 1014, respectively, according to some implementations.That is, bonding layers 3502 and 1014 can be disposed on opposite sidesof bonding interface 3503, and the bonding contacts of bonding layer3502 can be in contact with the bonding contacts of bonding layer 1014at bonding interface 3503. As a result, a large number (e.g., millions)of bonding contacts across bonding interface 3503 can make direct,short-distance (e.g., micron-level) electrical connections betweenadjacent semiconductor structures 102 and 106.

It is understood that in some examples, first and second semiconductorstructures 102 and 104 may also include bonding layers 1008 and 1010,respectively, disposed on opposite sides of bonding interface 103, asshown in FIG. 35B. In FIG. 35B, first semiconductor structure 102 of a3D memory device 3501 can include two bonding layers 1008 and 3502 ontwo sides thereof, and bonding layer 1008 can be disposed verticallybetween semiconductor layer 1002 and bonding interface 103. Secondsemiconductor structure 104 of 3D memory device 3501 can include bondinglayer 1010 disposed vertically between bonding interface 103 andsemiconductor layer 1004. Each bonding layer 1008 or 1010 can includeconductive bonding contacts (not shown) and dielectrics electricallyisolating the bonding contacts. The bonding contacts of bonding layer1008 can be in contact with the bonding contacts of bonding layer 1010at bonding interface 103. As a result, bonding contacts across bondinginterface 103 in conjunction with through contacts (e.g., ILVs/TSVs)through semiconductor layers 1002 and 1004 can make direct,short-distance (e.g., micron-level) electrical connections betweenadjacent semiconductor structures 104 and 102.

As shown in FIGS. 35A and 35B, since third and first semiconductorstructures 106 and 102 are bonded in a face-to-face manner (e.g.,semiconductor layer 1006 being disposed on the top side of thirdsemiconductor structure 106, while semiconductor layer 1002 beingdisposed on the bottom side of first semiconductor structure 102 inFIGS. 35A and 35B), the transistors in third semiconductor structure 106and the memory cell array in first semiconductor structure 102 facetoward each other, according to some implementations. In someimplementations, semiconductor layer 1004 is disposed vertically betweenthe transistors of the peripheral circuits in second semiconductorstructure 104 and bonding interface 103, and the transistors of theperipheral circuits in third semiconductor structure 106 are disposedvertically between bonding interface 105 and semiconductor layer 1006.Moreover, since first and second semiconductor structures 102 and 104are bonded in a back-to-back manner (e.g., semiconductor layer 1004being disposed on the top side of second semiconductor structure 104,while semiconductor layer 1002 being disposed on the bottom side offirst semiconductor structure 102 in FIGS. 35A and 35B), the transistorsof peripheral circuits in second semiconductor structure 104 and thememory cell array in first semiconductor structure 102 face away fromeach other, according to some implementations. It is understood thatpad-out interconnect layer 902 in FIGS. 9A and 9B is omitted from 3Dmemory device 3500 in FIG. 35 for ease of illustration and may beincluded in 3D memory device 3500 as described above with respect toFIGS. 9A and 9B.

As described above, second and third semiconductor structures 104 and106 can have peripheral circuits having transistors with differentapplied voltages. For example, second semiconductor structure 104 may beone example of semiconductor structure 408 including LLV circuits 402(and LV circuits 404 in some examples) in FIG. 4B, and thirdsemiconductor structure 106 may be one example of semiconductorstructure 410 including HV circuits 406 (and LV circuits 404 in someexamples) in FIG. 4B, or vice versa. Thus, in some implementations,semiconductor layers 1006 and 1004 in third and second semiconductorstructures 106 and 104 have different thicknesses to accommodate thetransistors with different applied voltages. In one example, thirdsemiconductor structure 106 may include HV circuits 406 and secondsemiconductor structure 104 may include LLV circuits 402, and thethickness of semiconductor layer 1006 in third semiconductor structure106 may be larger than the thickness of semiconductor layer 1004 insecond semiconductor structure 104. Moreover, in some implementations,the gate dielectrics of the transistors in third and secondsemiconductor structures 106 and 104 have different thicknesses as wellto accommodate the different applied voltages. In one example, thirdsemiconductor structure 106 may include HV circuits 406 and secondsemiconductor structure 104 may include LLV circuits 402, and thethickness of the gate dielectrics of the transistors in thirdsemiconductor structure 106 may be larger (e.g., at least 5-fold) thanthe thickness of the gate dielectrics of the transistors in secondsemiconductor structure 104.

FIGS. 36A and 36B illustrate side views of various examples of 3D memorydevices 3500 and 3501 in FIGS. 35A and 35B, according to various aspectsof the present disclosure. As shown in FIG. 36A, as one example of 3Dmemory devices 3500 and 3501 in FIGS. 35A and 35B, 3D memory device 3600is a bonded chip including first semiconductor structure 102, secondsemiconductor structure 104, and third semiconductor structure 106,which are stacked over one another in different planes in the verticaldirection (e.g., they-direction in FIG. 36A), according to someimplementations. First and second semiconductor structures 102 and 104are bonded at bonding interface 103 therebetween, and first and thirdsemiconductor structures 102 and 106 are bonded at bonding interface3503 therebetween, according to some implementations.

As shown in FIG. 36A, third semiconductor structure 106 can includesemiconductor layer 1006 having semiconductor materials. In someimplementations, semiconductor layer 1006 is a silicon substrate havingsingle crystalline silicon. Third semiconductor structure 106 can alsoinclude a device layer 3602 above and in contact with semiconductorlayer 1006. In some implementations, device layer 3602 includes a firstperipheral circuit 3604 and a second peripheral circuit 3606. Firstperipheral circuit 3604 can include HV circuits 406, such as drivingcircuits (e.g., string drivers 704 in row decoder/word line driver 308and drivers in column decoder/bit line driver 306), and secondperipheral circuit 3606 can include LV circuits 404, such as page buffercircuits (e.g., page buffer circuits 702 in page buffer 304) and logiccircuits (e.g., in control logic 312). In some implementations, firstperipheral circuit 3604 includes a plurality of transistors 3608 incontact with semiconductor layer 1006, and second peripheral circuit3606 includes a plurality of transistors 3610 in contact withsemiconductor layer 1006. Transistors 3608 and 3610 can include anytransistors disclosed herein, such as planar transistors 500 and 3Dtransistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 3608or 3610 includes a gate dielectric, and the thickness of the gatedielectric of transistor 3608 (e.g., in HV circuit 406) is larger thanthe thickness of the gate dielectric of transistor 3610 (e.g., in LVcircuit 404) due to the higher voltage applied to transistor 3608 thantransistor 3610. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 3608 and 3610) can be formedon or in semiconductor layer 1006 as well.

In some implementations, third semiconductor structure 106 furtherincludes an interconnect layer 3612 above device layer 3602 to transferelectrical signals to and from peripheral circuits 3606 and 3604. Asshown in FIG. 36A, interconnect layer 3612 can be disposed verticallybetween bonding interface 3503 and device layer 3602 (includingtransistors 3608 and 3610 of peripheral circuits 3604 and 3606).Interconnect layer 3612 can include a plurality of interconnects. Theinterconnects in interconnect layer 3612 can be coupled to transistors3608 and 3610 of peripheral circuits 3604 and 3606 in device layer 3602.Interconnect layer 3612 can further include one or more ILD layers inwhich the lateral lines and vias can form. That is, interconnect layer3612 can include lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 3602 are coupled to oneanother through the interconnects in interconnect layer 3612. Forexample, peripheral circuit 3604 may be coupled to peripheral circuit3606 through interconnect layer 3612. The interconnects in interconnectlayer 3612 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 3612 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof.

As shown in FIG. 36A, third semiconductor structure 106 can furtherinclude a bonding layer 1014 at bonding interface 3503 and above and incontact with interconnect layer 3612. Bonding layer 1014 can include aplurality of bonding contacts 1015 and dielectrics electricallyisolating bonding contacts 1015. Bonding contacts 1015 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, thebonding contacts of bonding layer 1014 include Cu. The remaining area ofbonding layer 1014 can be formed with dielectrics including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof. Bonding contacts 1015 andsurrounding dielectrics in bonding layer 1014 can be used for hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal (e.g., Cu-to-Cu) bonding and dielectric-dielectric(e.g., SiO₂-to-SiO₂) bonding simultaneously.

As shown in FIG. 36A, first semiconductor structure 102 can also includea bonding layer 3502 at bonding interface 3503, e.g., on the oppositeside of bonding interface 3503 with respect to bonding layer 1014 inthird semiconductor structure 106. Bonding layer 3502 can include aplurality of bonding contacts 3505 and dielectrics electricallyisolating bonding contacts 3505. Bonding contacts 3505 can includeconductive materials, such as Cu. The remaining area of bonding layer3502 can be formed with dielectric materials, such as silicon oxide.Bonding contacts 3505 and surrounding dielectrics in bonding layer 3502can be used for hybrid bonding. In some implementations, bondinginterface 3503 is the place at which bonding layers 3502 and 1014 aremet and bonded. In practice, bonding interface 3503 can be a layer witha certain thickness that includes the top surface of bonding layer 1014of third semiconductor structure 106 and the bottom surface of bondinglayer 3502 of first semiconductor structure 102.

As shown in FIG. 36A, first semiconductor structure 102 can furtherinclude an interconnect layer 3628 above and in contact with bondinglayer 3502 to transfer electrical signals. Interconnect layer 3628 caninclude a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. In some implementations, the interconnects ininterconnect layer 3628 also include local interconnects, such as bitline contacts and word line contacts. Interconnect layer 3628 canfurther include one or more ILD layers in which the lateral lines andvias can form. The interconnects in interconnect layer 3628 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. The ILD layers in interconnectlayer 3628 can include dielectric materials including, but not limitedto, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof.

As shown in FIG. 36A, first semiconductor structure 102 can furtherinclude a memory cell array, such as an array of NAND memory strings 208above and in contact with interconnect layer 3628. In someimplementations, interconnect layer 3628 is vertically between NANDmemory strings 208 and bonding interface 3503. Each NAND memory string208 extends vertically through a plurality of pairs each including aconductive layer and a dielectric layer, according to someimplementations. The stacked and interleaved conductive layers anddielectric layers are also referred to herein as a stack structure,e.g., a memory stack 3627. Memory stack 3627 may be an example of memorystack 804 in FIGS. 8A-8C, and the conductive layer and dielectric layerin memory stack 3627 may be examples of gate conductive layers 806 anddielectric layer 808, respectively, in memory stack 804. The interleavedconductive layers and dielectric layers in memory stack 3627 alternatein the vertical direction, according to some implementations. Eachconductive layer can include a gate electrode (gate line) surrounded byan adhesive layer and a gate dielectric layer. The gate electrode of theconductive layer can extend laterally as a word line, ending at one ormore staircase structures of memory stack 3627.

In some implementations, each NAND memory string 208 is a “charge trap”type of NAND memory string including any suitable channel structuresdisclosed herein, such as bottom plug channel structure 812A, sidewallplug channel structure 812B, or bottom open channel structure 812C,described above in detail with respect to FIGS. 8A-8C. It is understoodthat NAND memory strings 208 are not limited to the “charge trap” typeof NAND memory strings and may be “floating gate” type of NAND memorystrings in other examples.

As shown in FIG. 36A, first semiconductor structure 102 can furtherinclude semiconductor layer 1002 disposed above memory stack 3627 and incontact with the sources of NAND memory strings 208. In someimplementations, semiconductor layer 1002 is disposed vertically betweenbonding interface 103 and NAND memory strings 208. Semiconductor layer1002 can include semiconductor materials. In some implementations,semiconductor layer 1002 is a thinned silicon substrate having singlecrystalline silicon on which memory stack 3627 and NAND memory strings208 (e.g., including bottom plug channel structure 812A or sidewall plugchannel structure 812B) are formed. It is understood that in someexamples, trench isolations and doped regions (not shown) may be formedin semiconductor layer 1002 as well.

As shown in FIG. 36A, first semiconductor structure 102 can furtherinclude one or more contacts 3625 extending vertically throughsemiconductor layer 1002. In some implementations, contacts 3625 arecoupled to the interconnects in interconnect layer 3628. Contact 3625can include conductive materials including, but not limited to, W, Co,Cu, Al, silicides, or any combination thereof. In some implementations,contact 3625 includes W. In some implementations, contact 3625 includesa via surrounded by a dielectric spacer (e.g., having silicon oxide) toelectrically separate the via from semiconductor layer 1002. Dependingon the thickness of semiconductor layer 1002, contact 3625 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm).

Second semiconductor structure 104 can be bonded with firstsemiconductor structure 102 in a back-to-back manner at bondinginterface 103. Second semiconductor structure 104 can includesemiconductor layer 1004 having semiconductor materials. In someimplementations, bonding interface 103 is disposed vertically betweensemiconductor layer 1002 and semiconductor layer 1004 as a result ofanodic bonding or fusion bonding as described below in detail. In someimplementations, bonding interface 103 is the place at whichsemiconductor layer 1002 and semiconductor layer 1004 are met andbonded. In practice, bonding interface 103 can be a layer with a certainthickness that includes the top surface of semiconductor layer 1002 offirst semiconductor structure 102 and the bottom surface ofsemiconductor layer 1004 of second semiconductor structure 104. In someimplementations, dielectric layer(s) (e.g., silicon oxide layer) areformed vertically between bonding interface 103 and semiconductor layer1004 and/or between bonding interface 103 and semiconductor layer 1002to facilitate the fusion bonding or anodic bonding of semiconductorlayers 1002 and 1004. Thus, it is understood that bonding interface 103may include the surfaces of the dielectric layer(s) in some examples. Itis further understood that in some examples, bonding layers havingbonding contacts (e.g., Cu contacts) may be formed vertically betweenbonding interface 103 and semiconductor layer 1004 and between bondinginterface 103 and semiconductor layer 1002 to achieve hybrid bonding ofsemiconductor layers 1002 and 1004. In other words, a dielectric layer(e.g., silicon oxide layer) may be disposed vertically betweensemiconductor layer 1004 and semiconductor layer 1002 in some examples,which can serve as a shielding layer between the components formed onsemiconductor layer 1002 and the components formed on semiconductorlayer 1004, for example, for reducing the impact across bondinginterface 103 on the threshold voltage of transistors 3620 and 3622caused by memory stack 3627 and NAND memory strings 208.

Second semiconductor structure 104 can include a device layer 3614 aboveand in contact with semiconductor layer 1004. In some implementations,device layer 3614 includes a third peripheral circuit 3616 and a fourthperipheral circuit 3618. Third peripheral circuit 3616 can include LLVcircuits 402, such as I/O circuits (e.g., in interface 316 and data bus318), and fourth peripheral circuit 3618 can include LV circuits 404,such as page buffer circuits (e.g., page buffer circuits 702 in pagebuffer 304) and logic circuits (e.g., in control logic 312). In someimplementations, third peripheral circuit 3616 includes a plurality oftransistors 3620, and fourth peripheral circuit 3618 includes aplurality of transistors 3622 as well. Transistors 3620 and 3622 caninclude any transistors disclosed herein, such as planar transistors 500and 3D transistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 3620or 3622 includes a gate dielectric, and the thickness of the gatedielectric of transistor 3620 (e.g., in LLV circuit 402) is smaller thanthe thickness of the gate dielectric of transistor 3622 (e.g., in LVcircuit 404) due to the lower voltage applied to transistor 3620 thantransistor 3622. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 3620 and 3622) can be formedon or in semiconductor layer 1004 as well.

Moreover, the different voltages applied to different transistors 3620,3622, 3608, and 3610 in second and third semiconductor structures 104and 106 can lead to differences of device dimensions between second andthird semiconductor structures 104 and 106. In some implementations, thethickness of the gate dielectric of transistor 3608 (e.g., in HV circuit406) is larger than the thickness of the gate dielectric of transistor3620 (e.g., in LLV circuit 402) due to the higher voltage applied totransistor 3608 than transistor 3620. In some implementations, thethickness of the gate dielectric of transistor 3622 (e.g., in LV circuit404) is the same as the thickness of the gate dielectric of transistor3610 (e.g., in LV circuit 404) due to the same voltage applied totransistor 3622 and transistor 3610. In some implementations, thethickness of semiconductor layer 1006 in which transistor 3608 (e.g., inHV circuit 406) is formed is larger than the thickness of semiconductorlayer 1004 in which transistor 3620 (e.g., in LLV circuit 402) is formeddue to the higher voltage applied to transistor 3608 than transistor3620.

As shown in FIG. 36A, second semiconductor structure 104 can furtherinclude an interconnect layer 3626 above and in contact with devicelayer 3614 to transfer electrical signals to and from peripheralcircuits 3616 and 3618. As shown in FIG. 36A, device layer 1714(including transistors 1720 and 1722 of peripheral circuits 1716 and1718) can be vertically between bonding interface 103 and interconnectlayer 3626. Interconnect layer 3626 can include a plurality ofinterconnects coupled to transistors 3620 and 3622 of peripheralcircuits 3616 and 3618 in device layer 3614. Interconnect layer 3626 canfurther include one or more ILD layers in which the interconnects canform. That is, interconnect layer 3626 can include lateral lines andvias in multiple ILD layers. In some implementations, the devices indevice layer 3614 are coupled to one another through the interconnectsin interconnect layer 3626. For example, peripheral circuit 3616 may becoupled to peripheral circuit 3618 through interconnect layer 3626. Theinterconnects in interconnect layer 3626 can include conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof. The ILD layers in interconnect layer 3626 caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof.

In some implementations, the interconnects in interconnect layer 3626include Cu, which has a relatively low resistivity (better electricalperformance) among conductive metal materials. As described below withrespect to the fabrication process, although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), since thefabrication of interconnect layer 3626 can occur after thehigh-temperature processes in forming device layer 3614 in secondsemiconductor structure 104 and devices in first semiconductor structure102, as well as being separated from the high temperature processes informing third semiconductor structure 106, the interconnects ofinterconnect layer 3626 having Cu can become feasible.

As shown in FIG. 36A, second semiconductor structure 104 can furtherinclude one or more contacts 3624 extending vertically throughsemiconductor layer 1004. In some implementations, contacts 3624 arecoupled to the interconnects in interconnect layer 3626. In someimplementations, contact 3624 is in contact with contact 3625, such thatcontacts 3624 and 3625 couple the interconnects in interconnect layer3626 to the interconnects in interconnect layer 3628 to make anelectrical connection across bonding interface 103 between second andfirst semiconductor structures 104 and 102 and through semiconductorlayers 1004 and 1002. Contact 3624 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, silicides, or anycombination thereof. In some implementations, contact 3624 includes avia surrounded by a dielectric spacer (e.g., having silicon oxide) toelectrically separate the via from semiconductor layer 1004. Dependingon the thickness of semiconductor layer 1004, contact 3624 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm).

As shown in FIG. 36A, second semiconductor structure 104 can furtherinclude a pad-out interconnect layer 902 above and in contact withinterconnect layer 3626. In some implementations, device layer 3614having transistors 3620 and 3622 is disposed vertically between pad-outinterconnect layer 902 and semiconductor layer 1004. Pad-outinterconnect layer 902 can include interconnects, e.g., contact pads3632, in one or more ILD layers. Pad-out interconnect layer 902 andinterconnect layer 3626 can be formed on the same side of semiconductorlayer 1004. In some implementations, the interconnects in pad-outinterconnect layer 902 can transfer electrical signals between 3D memorydevice 3600 and external devices, e.g., for pad-out purposes.

As a result, peripheral circuits 3604, 3606, 3616, and 3618 in third andsecond semiconductor structures 106 and 104 can be coupled to NANDmemory strings 208 in first semiconductor structure 102 through variousinterconnection structures, including interconnect layers 3612, 3626,and 3628 and contacts 3624 and 3625. Moreover, peripheral circuits 3604,3606, 3616, and 3618 and NAND memory strings 208 in 3D memory device3600 can be further coupled to external devices through pad-outinterconnect layer 902.

It is understood that the pad-out of 3D memory devices is not limited tofrom second semiconductor structure 104 having transistors 3620 and 3622as shown in FIG. 36A (corresponding to FIG. 34B) and may be from thirdsemiconductor structure 106 having transistors 3608 and 3610(corresponding to FIG. 34A). For example, as shown in FIG. 36B, 3Dmemory device 3601 may include pad-out interconnect layer 902 in thirdsemiconductor structure 106. Pad-out interconnect layer 902 can be incontact with semiconductor layer 1006 of third semiconductor layer 1006on which transistors 3608 and 3610 are formed. In some implementations,third semiconductor structure 106 further includes one or more contacts3634 extending vertically through semiconductor layer 1006. In someimplementations, contact 3634 couples the interconnects in interconnectlayer 3612 in third semiconductor structure 106 to contact pads 3632 inpad-out interconnect layer 902 to make an electrical connection throughsemiconductor layer 1006. Contact 3634 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, silicides, or anycombination thereof. In some implementations, contact 3634 includes W.In some implementations, contact 3634 includes a via surrounded by adielectric spacer (e.g., having silicon oxide) to electrically separatethe via from semiconductor layer 1006. Depending on the thickness ofsemiconductor layer 1006, contact 3634 can be an ILV having a depth inthe submicron-level (e.g., between 10 nm and 1 μm), or a TSV having adepth in the micron- or tens micron-level (e.g., between 1 μm and 100μm).

It is further understood that the material of semiconductor layer 1002in first semiconductor structure 102 is not limited to singlecrystalline silicon as described above with respect to FIG. 36A and maybe any other suitable semiconductor materials. For example, as shown inFIG. 36B, 3D memory device 3601 may include semiconductor layer 1002having polysilicon in first semiconductor structure 102. NAND memorystrings 208 of 3D memory device 3601 in contact with semiconductor layer1002 having polysilicon can include any suitable channel structuresdisclosed herein that are in contact with a polysilicon layer, such asbottom open channel structure 812C. In some implementations, NAND memorystrings 208 of 3D memory device 3601 are “floating gate” type of NANDmemory strings, and semiconductor layer 1002 having polysilicon is incontact with the “floating gate” type of NAND memory strings as thesource plate thereof. It is understood that the details of the samecomponents (e.g., materials, fabrication process, functions, etc.) inboth 3D memory devices 3600 and 3601 are not repeated for ease ofdescription.

FIGS. 37A-37G illustrate a fabrication process for forming the 3D memorydevice in FIGS. 35A and 35B, according to some aspects of the presentdisclosure. FIG. 38 illustrates a flowchart of another method 3800 forforming the 3D memory devices in FIGS. 35A and 35B, according to someaspects of the present disclosure. Examples of the 3D memory devicesdepicted in FIGS. 37A-37G and 38 include 3D memory devices 3600 and 3601depicted in FIGS. 36A and 36B. FIGS. 37A-37G and 38 will be describedtogether. It is understood that the operations shown in method 3800 arenot exhaustive and that other operations can be performed as wellbefore, after, or between any of the illustrated operations. Further,some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 38 . For example, operation 3802,3804, and 3806 may be performed in parallel.

Referring to FIG. 38 , method 3800 starts at operation 3802, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 37A, a stack structure, such as a memory stack3704 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 3702. To form memory stack 3704, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 3702. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 3704 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 3704 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 3704 and silicon substrate 3702.

As illustrated in FIG. 37A, NAND memory strings 3706 are formed abovesilicon substrate 3702, each of which extends vertically through memorystack 3704 to be in contact with silicon substrate 3702. In someimplementations, fabrication processes to form NAND memory string 3706include forming a channel hole through memory stack 3704 (or thedielectric stack) and into silicon substrate 3702 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 3706 may vary depending on the typesof channel structures of NAND memory strings 3706 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 37A, an interconnect layer 3708 is formedabove memory stack 3704 and NAND memory strings 3706. Interconnect layer3708 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 3706. Insome implementations, interconnect layer 3708 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 3708 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 37A can be collectively referred to as interconnect layer 3708.

In some implementations, a first bonding layer is formed aboveinterconnect layer. The first bonding layer can include a plurality offirst bonding contacts. As illustrated in FIG. 37A, a bonding layer 3710is formed above interconnect layer 3708. Bonding layer 3710 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 3708 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 3708by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 3800 proceeds to operation 3804, as illustrated in FIG. 38 , inwhich a first transistor is formed on a second substrate. The secondsubstrate can be a silicon substrate having single crystalline silicon.As illustrated in FIG. 37B, a plurality of transistors 3714 and 3716 areformed on a silicon substrate 3712. Transistors 3714 and 3716 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 3712 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 3714 and 3716. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 3712 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 3714 isdifferent from the thickness of gate dielectric of transistor 3716, forexample, by depositing a thicker silicon oxide film in the region oftransistor 3714 than the region of transistor 3716, or by etching backpart of the silicon oxide film deposited in the region of transistor3716. It is understood that the details of fabricating transistors 3714and 3716 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer 3718 is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 37B, an interconnect layer 3718 can be formed above transistors3714 and 3716. Interconnect layer 3718 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 3714 and 3716. In some implementations, interconnectlayer 3718 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 3718 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 37B can be collectively referred to as interconnectlayer 3718.

In some implementations, a second bonding layer is formed aboveinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIG. 37B, a bonding layer3720 is formed above interconnect layer 3718. Bonding layer 3720 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 3718 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 3718by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 3800 proceeds to operation 3806, as illustrated in FIG. 38 , inwhich a second transistor is formed on a third substrate. The thirdsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, any two or all of operations 3802, 3804, and3806 are performed in parallel to reduce process time.

As illustrated in FIG. 37C, a plurality of transistors 3724 and 3726 areformed on a silicon substrate 3722. Transistors 3724 and 3726 can beformed by a plurality of processes including, but not limited to,photolithography, dry/wet etch, thin film deposition, thermal growth,implantation, CMP, and any other suitable processes. In someimplementations, doped regions are formed in silicon substrate 3722 byion implantation and/or thermal diffusion, which function, for example,as wells and source/drain regions of transistors 3724 and 3726. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 3722 by wet/dry etch and thin film deposition. In someimplementations, the thickness of gate dielectric of transistor 3724 isdifferent from the thickness of gate dielectric of transistor 3726, forexample, by depositing a thicker silicon oxide film in the region oftransistor 3724 than the region of transistor 3726, or by etching backpart of the silicon oxide film deposited in the region of transistor3726. It is understood that the details of fabricating transistors 3724and 3726 may vary depending on the types of the transistors (e.g.,planar transistors 500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and6B) and thus, are not elaborated for ease of description.

In some implementations, an interconnect layer is formed above thetransistor on the third substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 37C, an interconnect layer 3742 can be formed above transistors3724 and 3726. Interconnect layer 3742 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 3724 and 3726. In some implementations, interconnectlayer 3742 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 3742 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 37C can be collectively referred to as interconnectlayer 3742. In some implementations, the interconnects in interconnectlayer 3742 include Cu, which has a relatively low resistivity amongconductive metal materials. It is understood that although Cu has arelatively low thermal budget (incompatible with high-temperatureprocesses), using Cu as the conductive materials of the interconnects ininterconnect layer 3742 may become feasible since there are no morehigh-temperature processes after the fabrication of interconnect layer3742.

Method 3800 proceeds to operation 3808, as illustrated in FIG. 38 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner. The first bonding contact in the first bondinglayer can be in contact with the second bonding contact in the secondbonding layer at a first bonding interface after bonding the first andsecond substrates. The bonding can include hybrid bonding.

As illustrated in FIG. 37D, silicon substrate 3702 and components formedthereon (e.g., memory stack 3704 and NAND memory strings 3706 formedtherethrough) are flipped upside down. Bonding layer 3710 facing down isbonded with bonding layer 3720 facing up, i.e., in a face-to-facemanner, thereby forming a bonding interface 3732. That is, siliconsubstrate 3702 and components formed thereon can be bonded with siliconsubstrate 3712 and components formed thereon in a face-to-face manner,such that the bonding contacts in bonding layer 3710 are in contact withthe bonding contacts in bonding layer 3720 at bonding interface 3732.Transistors 3714 and 3716 and NAND memory strings 3706 can face towardeach other after the bonding. In some implementations, a treatmentprocess, e.g., plasma treatment, wet treatment and/or thermal treatment,is applied to bonding surfaces prior to bonding. Although not shown inFIG. 37D, it is understood that in some examples, silicon substrate 3712and components formed thereon (e.g., transistors 3714 and 3716) can beflipped upside down, and bonding layer 3720 facing down can be bondedwith bonding layer 3710 facing up, i.e., in a face-to-face manner,thereby forming bonding interface 3732 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 3732 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 3710 and the bondingcontacts in bonding layer 3720 are aligned and in contact with oneanother, such that memory stack 3704 and NAND memory strings 3706 formedtherethrough can be coupled to transistors 3714 and 3716 through thebonded bonding contacts across bonding interface 3732, according to someimplementations.

In some implementations, the first substrate is thinned. As illustratedin FIG. 37E, silicon substrate 3702 (shown in FIG. 37D) is thinned tobecome a semiconductor layer 3734 having single crystalline silicon.Silicon substrate 3702 can be thinned by processes including, but notlimited to, wafer grinding, dry etch, wet etch, CMP, any other suitableprocesses, or any combination thereof.

In some implementations, a first contact through the thinned firstsubstrate is formed. As illustrated in FIG. 37E, one or more contacts3736 each extending vertically through semiconductor layer 3734 (i.e.,the thinned silicon substrate 3702) are formed. Contacts 3736 can becoupled to the interconnects in interconnect layer 3708. Contact 3736can be formed by first patterning contact holes through semiconductorlayer 3734 using patterning process (e.g., photolithography and dry/wetetch of dielectric materials in the dielectric layer). The contact holescan be filled with a conductor (e.g., W or Cu). In some implementations,filling the contact holes includes depositing a spacer (e.g., a siliconoxide layer) before depositing the conductor. It is understood that insome examples, contacts 3736 may be formed in silicon substrate 3702before thinning (the formation of semiconductor layer 3734, e.g., inFIG. 37A) and be exposed from the backside of silicon substrate 3702(where the thinning occurs) after the thinning.

In some implementations, the third substrate is thinned. As illustratedin FIG. 37F, silicon substrate 3722 (shown in FIG. 37C) is thinned tobecome a semiconductor layer 3728 having single crystalline silicon.Silicon substrate 3722 can be thinned by processes including, but notlimited to, wafer grinding, dry etch, wet etch, CMP, any other suitableprocesses, or any combination thereof. In some implementations, as shownin FIG. 37F, a handle substrate 3743 is attached to interconnect layer3742, for example, using adhesive bonding, prior to the thinning toallow the subsequent backside processes on silicon substrate 3722, suchas thinning, contact formation, and bonding.

In some implementations, a second contact through the thinned thirdsubstrate is formed. As illustrated in FIG. 37F, one or more contacts3737 each extending vertically through semiconductor layer 3728 (i.e.,the thinned silicon substrate 3722) are formed. Contacts 3737 can becoupled to the interconnects in interconnect layer 3708. Contact 3736can be formed by first patterning contact holes through semiconductorlayer 3734 using patterning process (e.g., photolithography and dry/wetetch of dielectric materials in the dielectric layer). The contact holescan be filled with a conductor (e.g., W or Cu). In some implementations,filling the contact holes includes depositing a spacer (e.g., a siliconoxide layer) before depositing the conductor. It is understood that insome examples, contacts 3737 may be formed in silicon substrate 3722before thinning (the formation of semiconductor layer 3728, e.g., inFIG. 37C) and be exposed from the backside of silicon substrate 3722(where the thinning occurs) after the thinning.

Method 3800 proceeds to operation 3810, as illustrated in FIG. 38 , inwhich the first substrate and the third substrate are bonded in aback-to-back manner. As illustrated in FIG. 37F, thinned siliconsubstrate 3702 (i.e., semiconductor layer 3734) and components formedthereon (e.g., memory stack 3704 and NAND memory strings 3706) is bondedto thinned silicon substrate 3722 (i.e., semiconductor layer 3728) andcomponents formed thereon (e.g., transistors 3724 and 3726) in aface-to-back manner, i.e., the backside of thinned silicon substrate3702 facing toward the backside of thinned silicon substrate 3722, toform a bonding interface 3740. The bonding can be performed using fusionbonding or anodic bonding depending on the materials at bondinginterface 3132, e.g., SiO₂—Si or SiO₂—SiO₂. As a result of the bonding,contact 3736 is aligned and in contact with contact 3736 at bondinginterface 3740, and bonded contacts 3736 and 3737 couple theinterconnects in interconnect layer 3742 to the interconnects ininterconnect layer 3708, according to some implementations.

In some implementations, a third bonding layer is formed on a secondside of the thinned first substrate opposite to a first side on whichthe array of NAND memory strings is formed, and a fourth bonding layeris formed on a second side of the thinned third substrate opposite to afirst side on which the transistor is formed. The third bonding layercan include a plurality of third bonding contacts, and the fourthbonding layer can include a plurality of fourth bonding contacts.Although not shown in FIG. 37F, it is understood that the firstsubstrate and the third substrate may be bonded in a back-to-back mannerusing hybrid bonding, such that the third bonding contacts in the thirdbonding layer are aligned and in contact with the fourth bondingcontacts in the fourth bonding layer at bonding interface 3740 asdescribed above in detail. Although not shown, in some implementations,semiconductor layer 3734 having single crystalline silicon (i.e.,thinned silicon substrate 3702) is replaced with a semiconductor layerhaving a different material (e.g., a polysilicon layer) before formingthe third bonding layer, such that the third bonding layer is formed onthe replaced semiconductor layer (e.g., the polysilicon layer). As aresult, the third and fourth bonding layers can be in contact withsemiconductor layers with different materials, such as polysilicon andsingle crystalline silicon, respectively.

Method 3800 skips optional operation 3812 and proceeds to operation3814, as illustrated in FIG. 38 , in which a pad-out interconnect layeris formed. The pad-out interconnect layer can be formed above the secondtransistor. As illustrated in FIG. 37G, handle substrate 3743 (shown inFIG. 37F) is removed, and a pad-out interconnect layer 3746 is formedabove interconnect layer 3742 and transistors 3724 and 3726 onsemiconductor layer 3728. Pad-out interconnect layer 3746 can includeinterconnects, such as contact pads 3748, formed in one or more ILDlayers. Contact pads 3748 can include conductive materials including,but not limited to, W, Co, Cu, Al, doped silicon, silicides, or anycombination thereof. The ILD layers can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, low-k dielectrics, or any combination thereof.

In some implementations, to form a pad-out interconnect layer on thesecond substrate, after operation 3810, method 3800 proceeds to optionaloperation 3812, as illustrated in FIG. 38 , in which the secondsubstrate is thinned. It is understood that although not shown, in someexamples, silicon substrate 3702 (shown in FIG. 37F) may be thinned tobecome a semiconductor layer having single crystalline silicon usingprocesses including, but not limited to, wafer grinding, dry etch, wetetch, CMP, any other suitable processes, or any combination thereof.After the thinning, contacts may be formed extending vertically throughthe thinned silicon substrate 3712, for example, by wet/dry etchingfollowed by depositing dielectric materials as spacers and conductivematerials as conductors. It is understood that in some examples, thecontacts may be formed in silicon substrate 3712 before thinning and beexposed from the backside of silicon substrate 3712 (where the thinningoccurs) after the thinning.

Method 3800 proceeds to operation 3814, as illustrated in FIG. 38 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned second substrate. It is understoodthat although not shown, in some examples, a pad-out interconnect layerhaving contact pads may be formed on the thinned silicon substrate 3712.It is further understood that in some examples, the first substrate(e.g., silicon substrate 3702 or semiconductor layer 3734 afterthinning) may be removed and replaced with a semiconductor layer havingpolysilicon in a similar manner as described above with respect to FIGS.12G and 12H.

FIGS. 39A and 39B illustrate schematic views of cross-sections of 3Dmemory devices 3900 and 3901 having two stacked semiconductorstructures, according to various aspects of the present disclosure. 3Dmemory devices 3900 and 3901 may be examples of 3D memory device 120 inFIG. 1C in which first semiconductor structure 102 including the memorycell array is bonded to fourth semiconductor structure 108 including atleast two separate portions of the peripheral circuits of the memorycell array disposed in different planes. In other words, as shown inFIGS. 39A and 39B, first semiconductor structure 102 including thememory cell array of 3D memory devices 3900 and 3901 is disposed on oneside of 3D memory devices 3900 and 3901 in the vertical direction,according to some implementations.

In some implementations, first semiconductor structure 102 includes asemiconductor layer 1002, a bonding layer 1008, and a memory cell arrayvertically between semiconductor layer 1002 and bonding layer 1008. Thememory cell array can include an array of NAND memory strings (e.g.,NAND memory strings 208 disclosed herein), and the sources of the arrayof NAND memory strings can be in contact with semiconductor layer 1002(e.g., as shown in FIGS. 8A-8C). Semiconductor layer 1002 can includesemiconductor materials, such as single crystalline silicon (e.g., asilicon substrate or a thinned silicon substrate) or polysilicon (e.g.,a deposited layer), for example, depending on the types of channelstructures of the NAND memory strings (e.g., bottom plug channelstructure 812A, sidewall plug channel structure 812B, or bottom openchannel structure 812C). Bonding layer 1008 can include conductivebonding contacts (not shown) and dielectrics electrically isolating thebonding contacts, which can be used, for example, for hybrid bonding asdescribed below in detail.

In some implementations, fourth semiconductor structure 108 includes asemiconductor layer 3904, a bonding layer 1010, a first portion of theperipheral circuits of the memory cell array vertically between bondinglayer 1010 and a first side of semiconductor layer 3904, and a secondportion of the peripheral circuits of the memory cell array in contactwith a second side of semiconductor layer 3904 opposite to the firstside. That is, the transistors (e.g., planar transistors 500 and 3Dtransistors 600) of the first portion of the peripheral circuits and thetransistors (e.g., planar transistors 500 and 3D transistors 600) of thesecond portion of the peripheral circuits can be in contact withopposite sides of semiconductor layer 3904. Thus, the transistors of thetwo separate portions of the peripheral circuits are stacked over eachother in different planes across semiconductor layer 3904, according tosome implementations. It is understood that in some examples, differentfrom semiconductor layer 1002 in first semiconductor structure 102,semiconductor layer 3904 on which the transistors are formed may includesingle crystalline silicon, but not polysilicon, due to the superiorcarrier mobility of single crystalline silicon that is desirable fortransistors' performance. Through contacts (e.g., ILVs/TSVs) throughsemiconductor layer 3904 can make direct, short-distance (e.g.,submicron-level) electrical connections between the two portions of theperipheral circuits on opposite sides of semiconductor layer 3904.

Similar to bonding layer 1008 in first semiconductor structure 102,bonding layer 1010 in fourth semiconductor structure 108 can alsoinclude conductive bonding contacts (not shown) and dielectricselectrically isolating the bonding contacts. Bonding interface 103 isvertically between and in contact with bonding layers 1008 and 1010,respectively, according to some implementations. That is, bonding layers1008 and 1010 can be disposed on opposite sides of bonding interface103, and the bonding contacts of bonding layer 1008 can be in contactwith the bonding contacts of bonding layer 1010 at bonding interface103. As a result, a large number (e.g., millions) of bonding contactsacross bonding interface 103 can make direct, short-distance (e.g.,micron-level) electrical connections between adjacent semiconductorstructures 102 and 108.

Moreover, as shown in FIGS. 39A and 39B, 3D memory device 3900 or 3901can further include a pad-out interconnect layer 902 for pad-outpurposes, i.e., interconnecting with external devices using contact padson which bonding wires can be soldered. In one example shown in FIG.39A, fourth semiconductor structure 108 including peripheral circuitsmay include pad-out interconnect layer 902. In this example, 3D memorydevice 3900 may be pad-out from the peripheral circuit side to reducethe interconnect distance between contact pads and the peripheralcircuits, thereby decreasing the parasitic capacitance from theinterconnects and improving the electrical performance of 3D memorydevice 3900. In another example shown in FIG. 39B, first semiconductorstructure 102 including memory cell array may include pad-outinterconnect layer 902.

As shown in FIGS. 39A and 39B, 3D memory device 3900 or 3901 can includethe memory cell array, a first peripheral circuit including a firsttransistor, a second peripheral circuit include a second transistor, afirst semiconductor layer 3904 including a first side and a second side,and a second semiconductor layer 1002 including a third side and afourth side. The memory cell array, the first transistor, and the secondtransistor can be in contact with three of the first, second, third, andfourth sides. The second and third sides can be disposed between thefirst and fourth sides, and the first transistor and the memory cellarray can be in contact with the second and third sides, respectively.For example, as shown in FIGS. 39A and 39B, the memory cell array is incontact with the third side of second semiconductor layer 1002, thefirst transistor is in contact with the second side of firstsemiconductor layer 3904, and the second transistor is in contact withthe first side of first semiconductor layer 3904.

Moreover, as described below in detail, semiconductor layer 3904 can bea single silicon substrate (e.g., a thinned double side siliconsubstrate), and the peripheral circuits in fourth semiconductorstructure 108 can be formed on both sides (e.g., the front side and thebackside) of the single silicon substrate, thereby reducing the devicecost comparing with the architecture of using two silicon substrates andhaving the peripheral circuits formed on the front side of each siliconsubstrate.

FIGS. 40A and 40B illustrate side views of various examples of 3D memorydevices 3900 and 3901 in FIGS. 39A and 39B, according to various aspectsof the present disclosure. As shown in FIG. 40A, as one example of 3Dmemory devices 3900 and 3901 in FIGS. 39A and 39B, 3D memory device 4000is a bonded chip including first semiconductor structure 102 and fourthsemiconductor structure 108, which are stacked over each another indifferent planes in the vertical direction (e.g., the y-direction inFIG. 40A), according to some implementations. First and fourthsemiconductor structures 102 and 108 are bonded at bonding interface 103therebetween, and fourth semiconductor structure 108 includes twoseparate device layers 4002 and 4014 on opposite sides thereof in thevertical direction (e.g., the y-direction in FIG. 40A), according tosome implementations.

As shown in FIG. 40A, fourth semiconductor structure 108 can includesemiconductor layer 3904 having semiconductor materials. In someimplementations, semiconductor layer 3904 is a silicon substrate havingsingle crystalline silicon. Devices, such as transistors, can be formedon both sides of semiconductor layer 3904. In some implementations, thethickness of semiconductor layer 3904 is between 1 μm and 10 μm. Fourthsemiconductor structure 108 can also include a device layer 4002 aboveand in contact with a first side (e.g., toward the negative y-directionin FIG. 40A) of semiconductor layer 3904. In some implementations,device layer 4002 includes a first peripheral circuit 4004 and a secondperipheral circuit 4006. First peripheral circuit 4004 can include LLVcircuits 402, such as I/O circuits (e.g., in interface 316 and data bus318), and second peripheral circuit 4006 can include LV circuits 404,such as page buffer circuits (e.g., page buffer circuits 702 in pagebuffer 304) and logic circuits (e.g., in control logic 312). In someimplementations, first peripheral circuit 4004 includes a plurality oftransistors 4008 in contact with the first side of semiconductor layer3904, and second peripheral circuit 4006 includes a plurality oftransistors 4010 in contact with the first side of semiconductor layer1006. Transistors 4008 and 4010 can include any transistors disclosedherein, such as planar transistors 500 and 3D transistors 600. Asdescribed above in detail with respect to transistors 500 and 600, insome implementations, each transistor 4008 or 4010 includes a gatedielectric, and the thickness of the gate dielectric of transistor 4008(e.g., in LLV circuit 402) is smaller than the thickness of the gatedielectric of transistor 4010 (e.g., in LV circuit 404) due to the lowervoltage applied to transistor 4008 than transistor 4010. Trenchisolations (e.g., STIs) and doped regions (e.g., wells, sources, anddrains of transistors 4008 and 4010) can be formed on the first side ofsemiconductor layer 3904 as well.

In some implementations, fourth semiconductor structure 108 furtherincludes an interconnect layer 4012 above device layer 4002 to transferelectrical signals to and from peripheral circuits 4006 and 4004. Asshown in FIG. 40A, device layer 4002 (including transistors 4008 and4010 of peripheral circuits 4004 and 4006) can be disposed verticallybetween semiconductor layer 3904 and interconnect layer 4012.Interconnect layer 4012 can include a plurality of interconnects. Theinterconnects in interconnect layer 4012 can be coupled to transistors4008 and 4010 of peripheral circuits 4004 and 4006 in device layer 4002.Interconnect layer 4012 can further include one or more ILD layers inwhich the lateral lines and vias can form. That is, interconnect layer4012 can include lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 4002 are coupled to oneanother through the interconnects in interconnect layer 4012. Forexample, peripheral circuit 4004 may be coupled to peripheral circuit4006 through interconnect layer 4012. The interconnects in interconnectlayer 4012 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 4012 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof.

In some implementations, the interconnects in interconnect layer 4012include Cu, which has a relatively low resistivity (better electricalperformance) among conductive metal materials. As described below withrespect to the fabrication process, although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), since thefabrication of interconnect layer 4012 can occur after thehigh-temperature processes in forming device layers 4014 and 4002 infourth semiconductor structure 108, as well as being separated from thehigh-temperature processes in forming first semiconductor structure 102,the interconnects of interconnect layer 4012 having Cu can becomefeasible.

Fourth semiconductor structure 108 can also include another device layer4014 below and in contact with a second side (e.g., toward the positivey-direction in FIG. 40A) of semiconductor layer 3904 opposite to thefirst side. Device layers 4014 and 4002 can thus be disposed indifferent planes in the vertical direction, i.e., stacked over oneanother on opposite sides of semiconductor layer 3904 in fourthsemiconductor structure 108. In some implementations, device layer 4014includes a third peripheral circuit 4016 and a fourth peripheral circuit4018. Third peripheral circuit 4016 can include HV circuits 406, such asdriving circuits (e.g., string drivers 704 in row decoder/word linedriver 308 and drivers in column decoder/bit line driver 306), andfourth peripheral circuit 4018 can include LV circuits 404, such as pagebuffer circuits (e.g., page buffer circuits 702 in page buffer 304) andlogic circuits (e.g., in control logic 312). In some implementations,third peripheral circuit 4016 includes a plurality of transistors 4020,and fourth peripheral circuit 4018 includes a plurality of transistors4022 as well. Transistors 4020 and 4022 can include any transistorsdisclosed herein, such as planar transistors 500 and 3D transistors 600.As described above in detail with respect to transistors 500 and 600, insome implementations, each transistor 4020 or 4022 includes a gatedielectric, and the thickness of the gate dielectric of transistor 4020(e.g., in HV circuit 406) is larger than the thickness of the gatedielectric of transistor 4022 (e.g., in LV circuit 404) due to thehigher voltage applied to transistor 4020 than transistor 4022. In someimplementations, the thickness of the gate dielectric of transistor 4020(e.g., in HV circuit 406) is larger than the thickness of the gatedielectric of transistor 4008 (e.g., in LLV circuit 402) due to thehigher voltage applied to transistor 4020 than transistor 4008. In someimplementations, the thickness of the gate dielectric of transistor 4022(e.g., in LV circuit 404) is the same as the thickness of the gatedielectric of transistor 4010 (e.g., in LV circuit 404) due to the samevoltage applied to transistor 4022 and transistor 4010. Trenchisolations (e.g., STIs) and doped regions (e.g., wells, sources, anddrains of transistors 1720 and 1722) can be formed on the second side ofsemiconductor layer 3904 as well.

As shown in FIG. 40A, fourth semiconductor structure 108 can furtherinclude an interconnect layer 4026 below device layer 4014 to transferelectrical signals to and from peripheral circuits 4016 and 4018. Asshown in FIG. 40A, interconnect layer 4026 can be vertically betweenbonding interface 103 and device layer 4014 (including transistors 4020and 4022 of peripheral circuits 4016 and 4018). Interconnect layer 4026can include a plurality of interconnects coupled to transistors 4020 and4022 of peripheral circuits 4016 and 4018 in device layer 4014.Interconnect layer 4026 can further include one or more ILD layers inwhich the interconnects can form. That is, interconnect layer 4026 caninclude lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 4014 are coupled to oneanother through the interconnects in interconnect layer 4026. Forexample, peripheral circuit 4016 may be coupled to peripheral circuit4018 through interconnect layer 4026. The interconnects in interconnectlayer 4026 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 4026 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof. In some implementations,the interconnects in interconnect layer 4026 include W, which has arelatively high thermal budget (compatible with high-temperatureprocesses) and good quality (fewer detects, e.g., voids) amongconductive metal materials.

As shown in FIG. 40A, fourth semiconductor structure 108 can furtherinclude one or more contacts 4024 extending vertically throughsemiconductor layer 3904. In some implementations, contacts 4024 couplesthe interconnects in interconnect layer 4026 to the interconnects ininterconnect layer 4012 to make an electrical connection betweenopposite sides of semiconductor layer 3904. Contact 4024 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, contact4024 includes a via surrounded by a dielectric spacer (e.g., havingsilicon oxide) to electrically separate the via from semiconductor layer3904. Depending on the thickness of semiconductor layer 3904, contact4024 can be an ILV having a depth in the submicron-level (e.g., between10 nm and 1 μm), or a TSV having a depth in the micron- or tensmicron-level (e.g., between 1 μm and 100 μm).

As shown in FIG. 40A, fourth semiconductor structure 108 can furtherinclude a bonding layer 1010 at bonding interface 103 and below and incontact with interconnect layer 4026. Bonding layer 1010 can include aplurality of bonding contacts 1011 and dielectrics electricallyisolating bonding contacts 1011. Bonding contacts 1011 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, bondingcontacts 1011 of bonding layer 1010 include Cu. The remaining area ofbonding layer 1010 can be formed with dielectrics including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof. Bonding contacts 1011 andsurrounding dielectrics in bonding layer 1010 can be used for hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal (e.g., Cu-to-Cu) bonding and dielectric-dielectric(e.g., SiO₂-to-SiO₂) bonding simultaneously.

As shown in FIG. 40A, first semiconductor structure 102 can also includea bonding layer 1008 at bonding interface 103, e.g., on the oppositeside of bonding interface 103 with respect to bonding layer 1010 infourth semiconductor structure 108. Bonding layer 1008 can include aplurality of bonding contacts 1009 and dielectrics electricallyisolating bonding contacts 1009. Bonding contacts 1009 can includeconductive materials, such as Cu. The remaining area of bonding layer1008 can be formed with dielectric materials, such as silicon oxide.Bonding contacts 1009 and surrounding dielectrics in bonding layer 1008can be used for hybrid bonding. In some implementations, bondinginterface 103 is the place at which bonding layers 1008 and 1010 are metand bonded. In practice, bonding interface 103 can be a layer with acertain thickness that includes the top surface of bonding layer 1010 ofsecond semiconductor structure 104 and the bottom surface of bondinglayer 1008 of first semiconductor structure 102.

As shown in FIG. 40A, first semiconductor structure 102 can furtherinclude an interconnect layer 4028 above and in contact with bondinglayer 1008 to transfer electrical signals. Interconnect layer 4028 caninclude a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. In some implementations, the interconnects ininterconnect layer 4028 also include local interconnects, such as bitline contacts and word line contacts. Interconnect layer 4028 canfurther include one or more ILD layers in which the lateral lines andvias can form. The interconnects in interconnect layer 4028 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. The ILD layers in interconnectlayer 4028 can include dielectric materials including, but not limitedto, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof.

As shown in FIG. 40A, first semiconductor structure 102 can furtherinclude a memory cell array, such as an array of NAND memory strings 208below and in contact with interconnect layer 4028. In someimplementations, interconnect layer 4028 is vertically between NANDmemory strings 208 and bonding interface 103. Each NAND memory string208 extends vertically through a plurality of pairs each including aconductive layer and a dielectric layer, according to someimplementations. The stacked and interleaved conductive layers anddielectric layers are also referred to herein as a stack structure,e.g., a memory stack 4027. Memory stack 4027 may be an example of memorystack 804 in FIGS. 8A-8C, and the conductive layer and dielectric layerin memory stack 4027 may be examples of gate conductive layers 806 anddielectric layer 808, respectively, in memory stack 4027. Theinterleaved conductive layers and dielectric layers in memory stack 4027alternate in the vertical direction, according to some implementations.Each conductive layer can include a gate electrode (gate line)surrounded by an adhesive layer and a gate dielectric layer. The gateelectrode of the conductive layer can extend laterally as a word line,ending at one or more staircase structures of memory stack 4027.

In some implementations, each NAND memory string 208 is a “charge trap”type of NAND memory string including any suitable channel structuresdisclosed herein, such as bottom plug channel structure 812A, sidewallplug channel structure 812B, or bottom open channel structure 812C,described above in detail with respect to FIGS. 8A-8C. It is understoodthat NAND memory strings 208 are not limited to the “charge trap” typeof NAND memory strings and may be “floating gate” type of NAND memorystrings in other examples.

As shown in FIG. 40A, first semiconductor structure 102 can furtherinclude semiconductor layer 1002 disposed below memory stack 4027 and incontact with the sources of NAND memory strings 208. In someimplementations, NAND memory strings 208 are disposed vertically betweenbonding interface 103 and semiconductor layer 1002. Semiconductor layer1002 can include semiconductor materials. In some implementations,semiconductor layer 1002 is a thinned silicon substrate having singlecrystalline silicon on which memory stack 4027 and NAND memory strings208 (e.g., including bottom plug channel structure 812A or sidewall plugchannel structure 812B) are formed. It is understood that in someexamples, trench isolations and doped regions (not shown) may be formedin semiconductor layer 1002 as well.

As shown in FIG. 40A, fourth semiconductor structure 108 can furtherinclude a pad-out interconnect layer 902 above and in contact withinterconnect layer 4012. In some implementations, device layer 4002having transistors 4008 and 4010 is disposed vertically between pad-outinterconnect layer 902 and semiconductor layer 3904. Pad-outinterconnect layer 902 can include interconnects, e.g., contact pads4032, in one or more ILD layers. Pad-out interconnect layer 902 andinterconnect layer 4012 can be formed on the same side of semiconductorlayer 3904. In some implementations, the interconnects in pad-outinterconnect layer 902 can transfer electrical signals between 3D memorydevice 3900 and external devices, e.g., for pad-out purposes.

As a result, peripheral circuits 4004, 4006, 4016, and 4018 on differentsides of fourth semiconductor structure 108 can be coupled to NANDmemory strings 208 in first semiconductor structure 102 through variousinterconnection structures, including interconnect layers 4012, 4026,and 4028, bonding layers 1008 and 1010, as well as contacts 4024.Moreover, peripheral circuits 4004, 4006, 4016, and 4018 and NAND memorystrings 208 in 3D memory device 3900 can be further coupled to externaldevices through pad-out interconnect layer 902.

It is understood that the pad-out of 3D memory devices is not limited tofrom fourth semiconductor structure 108 having transistors 4008, 4010,4020, and 4022 as shown in FIG. 40A (corresponding to FIG. 39A) and maybe from first semiconductor structure 102 having NAND memory strings 208(corresponding to FIG. 39B). For example, as shown in FIG. 40B, 3Dmemory device 4001 may include pad-out interconnect layer 902 in firstsemiconductor structure 102. Pad-out interconnect layer 902 can be incontact with semiconductor layer 1002 of first semiconductor structure102 on which NAND memory strings 208 are formed. In someimplementations, first semiconductor structure 102 further includes oneor more contacts 4030 extending vertically through semiconductor layer1002. In some implementations, contact 4030 couples the interconnects ininterconnect layer 4028 in first semiconductor structure 102 to contactpads 4032 in pad-out interconnect layer 902 to make an electricalconnection through semiconductor layer 1002. Contact 4030 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, contact4030 includes a via surrounded by a dielectric spacer (e.g., havingsilicon oxide) to electrically separate the via from semiconductor layer1002. Depending on the thickness of semiconductor layer 1002, contact4030 can be an ILV having a depth in the submicron-level (e.g., between10 nm and 1 μm), or a TSV having a depth in the micron- or tensmicron-level (e.g., between 1 μm and 100 μm). In some implementations,in FIG. 40B, fourth semiconductor structure 108 of 3D memory device 4001further includes a passivation layer 4034, replacing pad-outinterconnect layer 902 in FIG. 40A. Passivation layer 4034 can includedielectric materials, such as silicon nitride and/or silicon oxide.

It is also understood that the material of semiconductor layer 1002 infirst semiconductor structure 102 is not limited to single crystallinesilicon as described above with respect to FIG. 40A and may be any othersuitable semiconductor materials. For example, as shown in FIG. 40B, 3Dmemory device 4001 may include semiconductor layer 1002 havingpolysilicon in first semiconductor structure 102. NAND memory strings208 of 3D memory device 4001 in contact with semiconductor layer 1002having polysilicon can include any suitable channel structures disclosedherein that are in contact with a polysilicon layer, such as bottom openchannel structure 812C. In some implementations, NAND memory strings 208of 3D memory device 4001 are “floating gate” type of NAND memorystrings, and semiconductor layer 1002 having polysilicon is in contactwith the “floating gate” type of NAND memory strings as the source platethereof. It is understood that the details of the same components (e.g.,materials, fabrication process, functions, etc.) in both 3D memorydevices 4000 and 4001 are not repeated for ease of description.

FIGS. 41A-41E illustrate a fabrication process for forming the 3D memorydevices in FIGS. 39A and 39B, according to some aspects of the presentdisclosure. FIGS. 42A-421 illustrate another fabrication process forforming the 3D memory devices in FIGS. 39A and 39B, according to someaspects of the present disclosure. FIG. 43 illustrates a flowchart of amethod 4300 for forming the 3D memory devices in FIGS. 39A and 39B,according to some aspects of the present disclosure. Examples of the 3Dmemory devices depicted in FIGS. 41A-41E, 42A-42F, and 43 include 3Dmemory devices 4000 and 4001 depicted in FIGS. 40A and 40B. FIGS.41A-41E, 42A-421, and 43 will be described together. It is understoodthat the operations shown in method 4300 are not exhaustive and thatother operations can be performed as well before, after, or between anyof the illustrated operations. Further, some of the operations may beperformed simultaneously, or in a different order than shown in FIG. 43. For example, operation 4302 and 4304 may be performed in parallel.

Referring to FIG. 43 , method 4300 starts at operation 4302, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIGS. 41A and 42E, a stack structure, such as a memorystack 4104 including interleaved conductive layers and dielectriclayers, is formed on a silicon substrate 4102. To form memory stack4104, in some implementations, a dielectric stack (not shown) includinginterleaved sacrificial layers (not shown) and the dielectric layers isformed on silicon substrate 4102. In some implementations, eachsacrificial layer includes a layer of silicon nitride, and eachdielectric layer includes a layer of silicon oxide. The interleavedsacrificial layers and dielectric layers can be formed by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. Memory stack 4104 can then be formed bya gate replacement process, e.g., replacing the sacrificial layers withthe conductive layers using wet/dry etch of the sacrificial layersselective to the dielectric layers and filling the resulting recesseswith the conductive layers. In some implementations, each conductivelayer includes a metal layer, such as a layer of W. It is understoodthat memory stack 4104 may be formed by alternatingly depositingconductive layers (e.g., doped polysilicon layers) and dielectric layers(e.g., silicon oxide layers) without the gate replacement process insome examples. In some implementations, a pad oxide layer includingsilicon oxide is formed between memory stack 4104 and silicon substrate4102.

As illustrated in FIGS. 41A and 42E, NAND memory strings 4106 are formedabove silicon substrate 4102, each of which extends vertically throughmemory stack 4104 to be in contact with silicon substrate 4102. In someimplementations, fabrication processes to form NAND memory string 4106include forming a channel hole through memory stack 4104 (or thedielectric stack) and into silicon substrate 4102 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 4106 may vary depending on the typesof channel structures of NAND memory strings 4106 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIGS. 41A and 42E, an interconnect layer 4108is formed above memory stack 4104 and NAND memory strings 4106.Interconnect layer 4108 can include interconnects of MEOL and/or BEOL ina plurality of ILD layers to make electrical connections with NANDmemory strings 4106. In some implementations, interconnect layer 4108includes multiple ILD layers and interconnects therein formed inmultiple processes. For example, the interconnects in interconnect layer4108 can include conductive materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD,electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIGS. 41A and 42E can be collectively referred to asinterconnect layer 4108.

In some implementations, a first bonding layer is formed aboveinterconnect layer. The first bonding layer can include a plurality offirst bonding contacts. As illustrated in FIGS. 41A and 42E, a bondinglayer 4110 is formed above interconnect layer 4108. Bonding layer 4110can include a plurality of bonding contacts surrounded by dielectrics.In some implementations, a dielectric layer is deposited on the topsurface of interconnect layer 4108 by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The bonding contacts can then be formed through thedielectric layer and in contact with the interconnects in interconnectlayer 4108 by first patterning contact holes through the dielectriclayer using patterning process (e.g., photolithography and dry/wet etchof dielectric materials in the dielectric layer). The contact holes canbe filled with a conductor (e.g., Cu). In some implementations, fillingthe contact holes includes depositing an adhesion (glue) layer, abarrier layer, and/or a seed layer before depositing the conductor.

Method 4300 proceeds to operation 4304, as illustrated in FIG. 43 , inwhich a first transistor is formed on a first side of a secondsubstrate. The second substrate can be a silicon substrate having singlecrystalline silicon. As illustrated in FIGS. 41B and 42A, a plurality oftransistors 4114 and 4116 are formed on one side of a silicon substrate4112. Transistors 4114 and 4116 can be formed by a plurality ofprocesses including, but not limited to, photolithography, dry/wet etch,thin film deposition, thermal growth, implantation, CMP, and any othersuitable processes. In some implementations, doped regions are formed insilicon substrate 4112 by ion implantation and/or thermal diffusion,which function, for example, as wells and source/drain regions oftransistors 4114 and 4116. In some implementations, isolation regions(e.g., STIs) are also formed in silicon substrate 4112 by wet/dry etchand thin film deposition. In some implementations, the thickness of gatedielectric of transistor 4114 is different from the thickness of gatedielectric of transistor 4116, for example, by depositing a thickersilicon oxide film in the region of transistor 4114 than the region oftransistor 4116, or by etching back part of the silicon oxide filmdeposited in the region of transistor 4116. It is understood that thedetails of fabricating transistors 4114 and 4116 may vary depending onthe types of the transistors (e.g., planar transistors 500 or 3Dtransistors 600 in FIGS. 5A, 5B, 6A, and 6B) and thus, are notelaborated for ease of description.

In some implementations, an interconnect layer is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIGS. 41B and 42A, an interconnect layer 4118 can be formed abovetransistors 4114 and 4116. Interconnect layer 4118 can includeinterconnects of MEOL and/or BEOL in a plurality of ILD layers to makeelectrical connections with transistors 4114 and 4116. In someimplementations, interconnect layer 4118 includes multiple ILD layersand interconnects therein formed in multiple processes. For example, theinterconnects in interconnect layer 4118 can include conductivematerials deposited by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIGS. 41B and 42A can be collectively referred to as interconnect layer4118. In some implementations, the interconnects in interconnect layer4118 include W, which has a relatively high thermal budget amongconductive metal materials to sustain later high-temperature processes.

In some implementations, a second bonding layer is formed above theinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIGS. 41B and 42A, a bondinglayer 4120 is formed above interconnect layer 4118. Bonding layer 4120can include a plurality of bonding contacts surrounded by dielectrics.In some implementations, a dielectric layer is deposited on the topsurface of interconnect layer 4118 by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The bonding contacts can then be formed through thedielectric layer and in contact with the interconnects in interconnectlayer 4118 by first patterning contact holes through the dielectriclayer using patterning process (e.g., photolithography and dry/wet etchof dielectric materials in the dielectric layer). The contact holes canbe filled with a conductor (e.g., Cu). In some implementations, fillingthe contact holes includes depositing an adhesion (glue) layer, abarrier layer, and/or a seed layer before depositing the conductor.

Method 4300 proceeds to operation 4306, as illustrated in FIG. 43 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner. The first bonding contact in the first bondinglayer can be in contact with the second bonding contact in the secondbonding layer at a bonding interface after bonding the first and secondsubstrates. The bonding can include hybrid bonding.

As illustrated in FIG. 41C, silicon substrate 4102 and components formedthereon (e.g., memory stack 4104 and NAND memory strings 4106) areflipped upside down. Bonding layer 4110 facing down is bonded withbonding layer 4120 facing up, i.e., in a face-to-face manner, therebyforming a bonding interface 4132. That is, silicon substrate 4102 andcomponents formed thereon can be bonded with silicon substrate 4112 andcomponents formed thereon in a face-to-face manner, such that thebonding contacts in bonding layer 4110 are in contact with the bondingcontacts in bonding layer 4120 at bonding interface 4132. In someimplementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 41C, it is understood that insome examples, silicon substrate 4112 and components formed thereon(e.g., transistors 4114 and 4116) can be flipped upside down, andbonding layer 4120 facing down can be bonded with bonding layer 4110facing up, i.e., in a face-to-face manner, thereby forming bondinginterface 4132 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 4132 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 4110 and the bondingcontacts in bonding layer 4120 are aligned and in contact with oneanother, such that memory stack 4104 and NAND memory strings 4106 formedtherethrough can be coupled to transistors 4114 and 4116 through thebonded bonding contacts across bonding interface 4132, according to someimplementations.

In some implementations, the second substrate is thinned after thebonding from the second side opposite to the first side. As illustratedin FIG. 41D, silicon substrate 4112 (shown in FIG. 41C) is thinned fromanother side opposite to the side on which transistors 4114 and 4116 areformed to become a semiconductor layer 4113 having single crystallinesilicon. Silicon substrate 4112 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof.

Method 4300 proceeds to operation 4308, as illustrated in FIG. 43 , inwhich a second transistor is formed on a second side of the secondsubstrate opposite to the first side. As illustrated in FIG. 41D, aplurality of transistors 4124 and 4126 are formed on the other side ofthinned silicon substrate 4112 (i.e., semiconductor layer 4113) oppositeto the side on which transistors 4114 and 4116 are formed. Transistors4124 and 4126 can be formed by a plurality of processes including, butnot limited to, photolithography, dry/wet etch, thin film deposition,thermal growth, implantation, CMP, and any other suitable processes. Insome implementations, doped regions are formed on the other side ofsemiconductor layer 4113 by ion implantation and/or thermal diffusion,which function, for example, as wells and source/drain regions oftransistors 4124 and 4126. In some implementations, isolation regions(e.g., STIs) are also formed on the other side of semiconductor layer4113 by wet/dry etch and thin film deposition. In some implementations,the thickness of gate dielectric of transistor 4124 is different fromthe thickness of gate dielectric of transistor 4126, for example, bydepositing a thicker silicon oxide film in the region of transistor 4124than the region of transistor 4126, or by etching back part of thesilicon oxide film deposited in the region of transistor 4126. It isunderstood that the details of fabricating transistors 4124 and 4126 mayvary depending on the types of the transistors (e.g., planar transistors500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and 6B) and thus, are notelaborated for ease of description.

In some implementations, an interconnect layer 4128 is formed above thetransistor. The interconnect layer can include a plurality ofinterconnects in one or more ILD layers. As illustrated in FIG. 41D, aninterconnect layer 4128 can be formed above transistors 4124 and 4126.Interconnect layer 4128 can include interconnects of MEOL and/or BEOL ina plurality of ILD layers to make electrical connections withtransistors 4124 and 4126. In some implementations, interconnect layer4128 includes multiple ILD layers and interconnects therein formed inmultiple processes. For example, the interconnects in interconnect layer4128 can include conductive materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD,electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 41D can be collectively referred to as interconnectlayer 4128.

Different from interconnect layer 4118, in some implementations, theinterconnects in interconnect layer 4128 include Cu, which has arelatively low resistivity among conductive metal materials. It isunderstood that although Cu has a relatively low thermal budget(incompatible with high-temperature processes), using Cu as theconductive materials of the interconnects in interconnect layer 4128 maybecome feasible since there are no more high-temperature processes afterthe fabrication of interconnect layer 4128.

In some implementations, a contact through the thinned second substrateis formed. As illustrated in FIG. 41D, one or more contacts 4136 eachextending vertically through semiconductor layer 4113 (i.e., the thinnedsilicon substrate 4112) are formed. Contacts 4136 can couple theinterconnects in interconnect layer 4118 and the interconnects ininterconnect layer 4128. Contact 4136 can be formed by first patterningcontact holes through semiconductor layer 4113 using patterning process(e.g., photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor.

Method 4300 skips optional operation 4310 and proceeds to operation4312, as illustrated in FIG. 43 , in which a pad-out interconnect layeris formed. The pad-out interconnect layer can be formed above the secondtransistor. As illustrated in FIG. 41E, a pad-out interconnect layer4140 is formed above interconnect layer 4128 and transistors 4126 and4124 on semiconductor layer 4113. Pad-out interconnect layer 4140 caninclude interconnects, such as contact pads 4138, formed in one or moreILD layers. Contact pads 4138 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, doped silicon, silicides,or any combination thereof. The ILD layers can include dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof. It isunderstood that although not shown in FIG. 41E, in some examples,silicon substrate 4102 may be thinned, and pad-out interconnect layer4140 may be formed on thinned silicon substrate 4102, instead of abovetransistors 4124 and 4126.

It is understood that in some examples, the sequence of operation 4306and 4308 in method 4300 may be switched. In some implementations, afteroperation 4304, method 4300 skips operation 4306 and proceeds tooperation 4308, as illustrated in FIG. 43 , in which a second transistoris formed on a second side of the second substrate opposite to the firstside.

In some implementations, the second substrate is thinned before thebonding from the second side opposite to the first side. As illustratedin FIG. 42C, silicon substrate 4112 (shown in FIG. 42B) is thinned fromanother side opposite to the side on which transistors 4114 and 4116 areformed to become semiconductor layer 4113 having single crystallinesilicon. Silicon substrate 4112 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof. In some implementations,as illustrated in FIG. 42B, a handle substrate 4201 is attached tobonding layer 4120, for example, using adhesive bonding, to allow thesubsequent backside processes on silicon substrates 4112, such asthinning, contact formation, and bonding.

As illustrated in FIG. 42D, transistors 4124 and 4126 are formed on theother side of thinned silicon substrate 4112 (i.e., semiconductor layer4113) opposite to the side on which transistors 4114 and 4116 areformed. Transistors 4124 and 4126 can be formed by a plurality ofprocesses including, but not limited to, photolithography, dry/wet etch,thin film deposition, thermal growth, implantation, CMP, and any othersuitable processes. In some implementations, doped regions are formed onthe other side of semiconductor layer 4113 by ion implantation and/orthermal diffusion, which function, for example, as wells andsource/drain regions of transistors 4124 and 4126. In someimplementations, isolation regions (e.g., STIs) are also formed on theother side of semiconductor layer 4113 by wet/dry etch and thin filmdeposition. In some implementations, the thickness of gate dielectric oftransistor 4124 is different from the thickness of gate dielectric oftransistor 4126, for example, by depositing a thicker silicon oxide filmin the region of transistor 4124 than the region of transistor 4126, orby etching back part of the silicon oxide film deposited in the regionof transistor 4126. It is understood that the details of fabricatingtransistors 4124 and 4126 may vary depending on the types of thetransistors (e.g., planar transistors 500 or 3D transistors 600 in FIGS.5A, 5B, 6A, and 6B) and thus, are not elaborated for ease ofdescription.

In some implementations, an interconnect layer 4128 is formed above thetransistor. The interconnect layer can include a plurality ofinterconnects in one or more ILD layers. As illustrated in FIG. 42D, aninterconnect layer 4128 can be formed above transistors 4124 and 4126.Interconnect layer 4128 can include interconnects of MEOL and/or BEOL ina plurality of ILD layers to make electrical connections withtransistors 4124 and 4126. In some implementations, interconnect layer4128 includes multiple ILD layers and interconnects therein formed inmultiple processes. For example, the interconnects in interconnect layer4128 can include conductive materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD,electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 42D can be collectively referred to as interconnectlayer 4128.

Different from interconnect layer 4118, in some implementations, theinterconnects in interconnect layer 4128 include Cu, which has arelatively low resistivity among conductive metal materials. It isunderstood that although Cu has a relatively low thermal budget(incompatible with high-temperature processes), using Cu as theconductive materials of the interconnects in interconnect layer 4128 maybecome feasible since there are no more high-temperature processes afterthe fabrication of interconnect layer 4128.

In some implementations, a contact through the thinned second substrateis formed. As illustrated in FIG. 42D, one or more contacts 4136 eachextending vertically through semiconductor layer 4113 (i.e., the thinnedsilicon substrate 4112) are formed after thinning silicon substrate3112. Contacts 4136 can couple the interconnects in interconnect layer4118 and the interconnects in interconnect layer 4128. Contact 4136 canbe formed after thinning silicon substrate 3112 by first patterningcontact holes through semiconductor layer 4113 using patterning process(e.g., photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor. It is understood that in some examples,contacts 4136 may be formed in silicon substrate 4112 before thinning(i.e., before the formation of semiconductor layer 4113, e.g., in FIG.42B) without fully penetrating through silicon substrate 4112 and beexposed from the backside of silicon substrate 4112 (where the thinningoccurs) after the thinning. In some examples, the contact hole and thespacer of contact 4136 may be sequentially formed in silicon substrate4112 before thinning and may be thinned along with silicon substrate4112 by the thinning process. The conductor of contact 4136 then may beformed through the thinned spacer after the thinning process.

After operation 4308, method 4300 returns to operation 4306, asillustrated in FIG. 43 , in which the first substrate and the secondsubstrate are bonded in a face-to-face manner. The first bonding contactin the first bonding layer can be in contact with the second bondingcontact in the second bonding layer at a bonding interface after bondingthe first and second substrates. The bonding can include hybrid bonding.

As illustrated in FIG. 42D, handle substrate 4201 (shown in FIG. 42C) isremoved to expose bonding layer 4120. In some implementations, anothersubstrate (not shown) is attached to interconnect layer 4128 to providesupport for the subsequent bonding process. As illustrated in FIG. 42E,silicon substrate 4102 and components formed thereon (e.g., memory stack4104 and NAND memory strings 4106) are flipped upside down. Bondinglayer 4110 facing down is bonded with bonding layer 4120 facing up,i.e., in a face-to-face manner, thereby forming a bonding interface4132. That is, silicon substrate 4102 and components formed thereon canbe bonded with the first side (on which transistors 4114 and 4116 areformed) of thinned silicon substrate 4112 (semiconductor layer 4113) andcomponents formed thereon in a face-to-face manner, such that thebonding contacts in bonding layer 4110 are in contact with the bondingcontacts in bonding layer 4120 at bonding interface 4132. In someimplementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 42E, it is understood that insome examples, thinned silicon substrate 4112 and components formedthereon (e.g., transistors 4114, 4116, 4124, and 4126) can be flippedupside down, and bonding layer 4120 facing down can be bonded withbonding layer 4110 facing up, i.e., in a face-to-face manner, therebyforming bonding interface 4132 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 4132 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 4110 and the bondingcontacts in bonding layer 4120 are aligned and in contact with oneanother, such that memory stack 4104 and NAND memory strings 4106 formedtherethrough can be coupled to transistors 4114, 4116, 4124, and 4126through the bonded bonding contacts across bonding interface 4132,according to some implementations. As illustrated in FIG. 42E, in someimplementations, after the bonding, a passivation layer 4242 is formedon interconnect layer 4128 by depositing dielectric materials, such assilicon nitride, using one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof.

Method 4300 proceeds to optional operation 4310, as illustrated in FIG.43 , in which the first substrate is thinned. As illustrated in FIG.42F, silicon substrate 4102 (shown in FIG. 42E) is thinned to become asemiconductor layer 4235 having single crystalline silicon. Siliconsubstrate 4102 can be thinned by processes including, but not limitedto, wafer grinding, dry etch, wet etch, CMP, any other suitableprocesses, or any combination thereof.

Method 4300 proceeds to operation 4312, as illustrated in FIG. 43 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed on the thinned first substrate. As illustrated inFIG. 42F, a pad-out interconnect layer 4208 is formed on semiconductorlayer 4235 (the thinned silicon substrate 4102). Pad-out interconnectlayer 4208 can include interconnects, such as contact pads 4238, formedin one or more ILD layers. Contact pads 4238 can include conductivematerials including, but not limited to, W, Co, Cu, Al, doped silicon,silicides, or any combination thereof. The ILD layers can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some implementations, after the bonding andthinning, contacts 4244 are formed, extending vertically throughsemiconductor layer 4235, for example, by wet/dry etching followed bydepositing dielectric materials as spacers and conductive materials asconductors. Contacts 4244 can couple contact pads 4238 in pad-outinterconnect layer 4208 to the interconnects in interconnect layer 4108.It is understood that in some examples, contacts 4244 may be formed insilicon substrate 4102 before thinning (the formation of semiconductorlayer 4235, e.g., in FIG. 42E) and be exposed from the backside ofsilicon substrate 4102 (where the thinning occurs) after the thinning.

It is understood that in some examples, the first substrate (e.g.,silicon substrate 4102 or semiconductor layer 4235 after thinning) maybe removed and replaced with a semiconductor layer having polysilicon ina similar manner as described above with respect to FIGS. 12G and 12H.

After operation 4308, as the first and second transistors are formed onboth sides of the second substrate, respectively, the first substratecan be bonded with either the first side or the second side of thesecond substrate at operation 4306. FIGS. 42D-42F show a process inwhich the first substrate is bonded with the first side of the secondsubstrate on which the first transistor is formed, e.g., bonding firstsubstrate 4102 and components thereon (e.g., NAND memory strings 4106)to one side of thinned second substrate 4112 (i.e., semiconductor layer4113) on which transistors 4114 and 4116 are formed. In someimplementations, the first substrate is bonded with the second side ofthe second substrate on which the second transistor is formed.

To bond the first substrate with the second side of the secondsubstrate, in some implementations, the second bonding layer is formedabove the interconnect layer above the second transistor, as opposed tothe interconnect layer above the first transistor. The second bondinglayer can include a plurality of second bonding contacts. As illustratedin FIG. 42G, bonding layer 4120 (e.g., shown in FIG. 42C) is not formedabove interconnect layer 4118, and handle substrate 4201 is attachedonto interconnect layer 4118, as opposed to bonding layer 4120. Instead,a bonding layer 4211 is formed above interconnect layer 4128. Bondinglayer 4211 can include a plurality of bonding contacts surrounded bydielectrics. In some implementations, a dielectric layer is deposited onthe top surface of interconnect layer 4128 by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. The bonding contacts can then be formed throughthe dielectric layer and in contact with the interconnects ininterconnect layer 4128 by first patterning contact holes through thedielectric layer using patterning process (e.g., photolithography anddry/wet etch of dielectric materials in the dielectric layer). Thecontact holes can be filled with a conductor (e.g., Cu). In someimplementations, filling the contact holes includes depositing anadhesion (glue) layer, a barrier layer, and/or a seed layer beforedepositing the conductor.

As shown in FIGS. 42B, 42C, and 42G, in some implementations, handlesubstrate 4201 is bonded to interconnect layer 4118 before thinningsilicon substrate 4112 and forming transistors 4124 and 4126 andinterconnect layer 4128 and bonding layer 4211 on the backside ofthinned silicon substrate 4112. That is, handle substrate 4201 canremain being bonded to interconnect layer 4118 without being removed andintroducing another handle substrate 4201 on the opposite side ofsemiconductor layer 4113 (i.e., thinned silicon substrate 4112), therebysimplifying the fabrication process and reducing the production cost.

In some implementations, the thickness of the gate dielectric oftransistor 4114 is larger than the thickness of the gate dielectric oftransistor 4126. For example, transistor 4114 may be one example of thetransistors forming HV circuits 406, and transistor 4126 may be oneexample of the transistors forming LLV circuits 402. That is,transistors 4114 of HV circuits 406 may be formed on the front side ofsilicon substrate 4112 before the formation of transistors 4126 of LLVcircuits 402 on the backside of silicon substrate 4112, which may reducethe impact of the formation of transistor 4114 on transistor 4126 in areversed order, thereby reducing the device defects of transistors 4126.

As illustrated in FIG. 42H, silicon substrate 4102 and components formedthereon (e.g., memory stack 4104 and NAND memory strings 4106) areflipped upside down. Bonding layer 4110 facing down is bonded withbonding layer 4211 facing up, i.e., in a face-to-face manner, therebyforming a bonding interface 4233. That is, silicon substrate 4102 andcomponents formed thereon can be bonded with the second side (on whichtransistors 4124 and 4126 are formed) of thinned silicon substrate 4112(semiconductor layer 4113) and components formed thereon in aface-to-face manner, such that the bonding contacts in bonding layer4110 are in contact with the bonding contacts in bonding layer 4211 atbonding interface 4233. In some implementations, a treatment process,e.g., plasma treatment, wet treatment and/or thermal treatment, isapplied to bonding surfaces prior to bonding. Although not shown in FIG.42H, it is understood that in some examples, thinned silicon substrate4112 and components formed thereon (e.g., transistors 4114, 4116, 4124,and 4126) can be flipped upside down, and bonding layer 4211 facing downcan be bonded with bonding layer 4110 facing up, i.e., in a face-to-facemanner, thereby forming bonding interface 4233 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 4233 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 4110 and the bondingcontacts in bonding layer 4211 are aligned and in contact with oneanother, such that memory stack 4104 and NAND memory strings 4106 formedtherethrough can be coupled to transistors 4114, 4116, 4124, and 4126through the bonded bonding contacts across bonding interface 4233,according to some implementations.

As illustrated in FIG. 421 , silicon substrate 4102 (shown in FIG. 42H)is thinned to become semiconductor layer 4235 having single crystallinesilicon. Silicon substrate 4102 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof.

As illustrated in FIG. 421 , pad-out interconnect layer 4208 is formedon semiconductor layer 4235 (the thinned silicon substrate 4102).Pad-out interconnect layer 4208 can include interconnects, such ascontact pads 4238, formed in one or more ILD layers. In someimplementations, after the bonding and thinning, contacts 4244 areformed, extending vertically through semiconductor layer 4235, forexample, by wet/dry etching followed by depositing dielectric materialsas spacers and conductive materials as conductors. Contacts 4244 cancouple contact pads 4238 in pad-out interconnect layer 4208 to theinterconnects in interconnect layer 4108. It is understood that in someexamples, contacts 4244 may be formed in silicon substrate 4102 beforethinning (the formation of semiconductor layer 4235, e.g., in FIG. 42E)and be exposed from the backside of silicon substrate 4102 (where thethinning occurs) after the thinning.

It is understood that in some examples, the first substrate (e.g.,silicon substrate 4102 or semiconductor layer 4235 after thinning) maybe removed and replaced with a semiconductor layer having polysilicon ina similar manner as described above with respect to FIGS. 12G and 12H.

FIGS. 44A and 44B illustrate schematic views of cross-sections of 3Dmemory devices 4400 and 4401 having two stacked semiconductor structures104 and 110, according to some aspects of the present disclosure. 3Dmemory devices 4400 and 4401 may be examples of 3D memory device 121 inFIG. 1D in which second semiconductor structure 104 including some ofthe peripheral circuits is bonded to a fifth semiconductor structure 110including a memory cell array and some of the peripheral circuits of thememory cell array disposed in different planes. In other words, as shownin FIGS. 44A and 44B, the memory cell array in fifth semiconductorstructure 110 is disposed in the intermediate of 3D memory devices 4400and 4401 in the vertical direction, according to some implementations.

In some implementations, second semiconductor structure 104 includes asemiconductor layer 1004, a bonding layer 1010, and some of theperipheral circuits vertically between semiconductor layer 1004 andbonding layer 1010. The transistors (e.g., planar transistors 500 and 3Dtransistors 600) of the peripheral circuits in second semiconductorstructure 104 can be in contact with semiconductor layer 1004.Semiconductor layer 1004 can include semiconductor materials. In someimplementations, semiconductor layer 1004 on which the transistors areformed includes single crystalline silicon, but not polysilicon, due tothe superior carrier mobility of single crystalline silicon that isdesirable for transistors' performance. Bonding layer 1010 can includeconductive bonding contacts (not shown) and dielectrics electricallyisolating the bonding contacts, which can be used, for example, forhybrid bonding as described below in detail.

In some implementations, fifth semiconductor structure 110 includes apad-out interconnect layer 902, a semiconductor layer 4404, a bondinglayer 4406, a memory cell array vertically between bonding layer 4406and a first side of semiconductor layer 4404, and some of the peripheralcircuits of the memory cell array vertically between pad-outinterconnect layer 902 and a second side of semiconductor layer 4404opposite to the first side. That is, the transistors of some of theperipheral circuits and the memory cell array can be in contact withopposite sides of semiconductor layer 4404. Thus, the transistors of thetwo separate portions of the peripheral circuits are stacked over eachother in different planes and separated by the memory cell array in thevertical direction, according to some implementations.

The memory cell array can include an array of NAND memory strings (e.g.,NAND memory strings 208 disclosed herein), and the sources of the arrayof NAND memory strings can be in contact with the first side ofsemiconductor layer 4404 (e.g., as shown in FIGS. 8A-8C). Thetransistors (e.g., planar transistors 500 and 3D transistors 600) of theperipheral circuits in fifth semiconductor structure 110 can be incontact with the second side of semiconductor layer 1004. Semiconductorlayer 4404 can include semiconductor materials, such as singlecrystalline silicon (e.g., a silicon substrate or a thinned siliconsubstrate). In some implementations, semiconductor layer 4404 on whichboth the transistors and the memory cell array are formed includessingle crystalline silicon, but not polysilicon, due to the superiorcarrier mobility of single crystalline silicon that is desirable fortransistors' performance.

Similar to bonding layer 1010 in second semiconductor structure 104,bonding layer 4406 in fifth semiconductor structure 110 can also includeconductive bonding contacts (not shown) and dielectrics electricallyisolating the bonding contacts. A bonding interface 4403 is verticallybetween and in contact with bonding layers 1010 and 4406, respectively,according to some implementations. That is, bonding layers 1010 and 4406can be disposed on opposite sides of bonding interface 4403, and thebonding contacts of bonding layer 4406 can be in contact with thebonding contacts of bonding layer 1010 at bonding interface 4403. As aresult, a large number (e.g., millions) of bonding contacts acrossbonding interface 103 can make direct, short-distance (e.g.,micron-level) electrical connections between adjacent semiconductorstructures 104 and 110.

As shown in FIGS. 44A and 44B, 3D memory devices 4400 and 4401 canfurther include a pad-out interconnect layer 902 for pad-out purposes,i.e., interconnecting with external devices using contact pads on whichbonding wires can be soldered. In one example shown in FIG. 44A, fifthsemiconductor structure 110 including some of the peripheral circuitsmay include pad-out interconnect layer 902. In another example shown inFIG. 44B, second semiconductor structure 104 including some of theperipheral circuits may include pad-out interconnect layer 902. Ineither example, 3D memory device 4400 or 4401 may be pad-out from one ofthe peripheral circuit sides to reduce the interconnect distance betweencontact pads and the peripheral circuits, thereby decreasing theparasitic capacitance from the interconnects and improving theelectrical performance of 3D memory device 4400 or 4401.

As shown in FIGS. 44A and 44B, 3D memory device 4400 or 4401 can includethe memory cell array, a first peripheral circuit including a firsttransistor, a second peripheral circuit include a second transistor, afirst semiconductor layer 1004 including a first side and a second side,and a second semiconductor layer 4404 including a third side and afourth side. The memory cell array, the first transistor, and the secondtransistor can be in contact with three of the first, second, third andfourth sides. The second and third sides can be disposed between thefirst and fourth sides, and the first transistor and the memory cellarray can be in contact with the second and third sides, respectively.For example, as shown in FIGS. 44A and 44B, the memory cell array is incontact with the third side of second semiconductor layer 4404, thefirst transistor is in contact with the second side of firstsemiconductor layer 1004, and the second transistor is in contact withthe fourth side of second semiconductor layer 4404.

FIGS. 45A and 45B illustrate side views of example of 3D memory devices4400 and 4401 in FIGS. 44A and 44B, according to various aspects of thepresent disclosure. As shown in FIG. 45A, as one example of 3D memorydevices 4400 and 4401 in FIGS. 44A and 44B, 3D memory device 4500 is abonded chip including second semiconductor structure 104 and fifthsemiconductor structure 110, which are stacked over one another indifferent planes in the vertical direction (e.g., they-direction in FIG.45A), according to some implementations. Fifth and second semiconductorstructures 110 and 104 are bonded at bonding interface 4403therebetween, and fifth semiconductor structure 110 includes two devicelayers 4514 and a memory stack 4527 (and NAND memory strings 208therethrough) on opposite sides thereof in the vertical direction (e.g.,the y-direction in FIG. 45A), according to some implementations.

As shown in FIG. 45A, second semiconductor structure 104 can includesemiconductor layer 1004 having semiconductor materials. In someimplementations, semiconductor layer 1004 is a silicon substrate havingsingle crystalline silicon. Second semiconductor structure 104 can alsoinclude a device layer 4502 above and in contact with semiconductorlayer 1004. In some implementations, device layer 4502 includes a firstperipheral circuit 4504 and a second peripheral circuit 4506. Firstperipheral circuit 4504 can include HV circuits 406, such as drivingcircuits (e.g., string drivers 704 in row decoder/word line driver 308and drivers in column decoder/bit line driver 306), and secondperipheral circuit 4506 can include LV circuits 404, such as page buffercircuits (e.g., page buffer circuits 702 in page buffer 304) and logiccircuits (e.g., in control logic 312). In some implementations, firstperipheral circuit 4504 includes a plurality of transistors 4508 incontact with semiconductor layer 1004, and second peripheral circuit4506 includes a plurality of transistors 4510 in contact withsemiconductor layer 1004. Transistors 4508 and 4510 can include anytransistors disclosed herein, such as planar transistors 500 and 3Dtransistors 600. As described above in detail with respect totransistors 500 and 600, in some implementations, each transistor 4508and 4510 includes a gate dielectric, and the thickness of the gatedielectric of transistor 4508 (e.g., in HV circuit 406) is larger thanthe thickness of the gate dielectric of transistor 4510 (e.g., in LVcircuit 404) due to the higher voltage applied to transistor 4508 thantransistor 4510. Trench isolations (e.g., STIs) and doped regions (e.g.,wells, sources, and drains of transistors 4508 and 4510) can be formedon or in semiconductor layer 1004 as well.

In some implementations, second semiconductor structure 104 furtherincludes an interconnect layer 4512 above device layer 4502 to transferelectrical signals to and from peripheral circuits 4506 and 4504. Asshown in FIG. 45A, interconnect layer 4512 can be disposed verticallybetween bonding interface 4403 and device layer 4502 (includingtransistors 4508 and 4510 of peripheral circuits 4504 and 4506).Interconnect layer 4512 can include a plurality of interconnects. Theinterconnects in interconnect layer 4512 can be coupled to transistors4508 and 4510 of peripheral circuits 4504 and 4506 in device layer 4502.Interconnect layer 4512 can further include one or more ILD layers inwhich the lateral lines and vias can form. That is, interconnect layer4512 can include lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 4502 are coupled to oneanother through the interconnects in interconnect layer 4512. Forexample, peripheral circuit 4504 may be coupled to peripheral circuit4506 through interconnect layer 4512. The interconnects in interconnectlayer 4512 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 4512 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof.

As shown in FIG. 45A, second semiconductor structure 104 can furtherinclude a bonding layer 1010 at bonding interface 4403 and above and incontact with interconnect layer 4512. Bonding layer 1010 can include aplurality of bonding contacts 1011 and dielectrics electricallyisolating the bonding contacts. Bonding contacts 1011 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In some implementations, bondingcontacts 1011 of bonding layer 1010 include Cu. The remaining area ofbonding layer 1010 can be formed with dielectrics including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof. Bonding contacts 1011 andsurrounding dielectrics in bonding layer 1010 can be used for hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal (e.g., Cu-to-Cu) bonding and dielectric-dielectric(e.g., SiO₂-to-SiO₂) bonding simultaneously.

As shown in FIG. 45A, fifth semiconductor structure 110 can also includea bonding layer 4406 at bonding interface 4403, e.g., on the oppositeside of bonding interface 4403 with respect to bonding layer 1010 insecond semiconductor structure 104. Bonding layer 4406 can include aplurality of bonding contacts 4407 and dielectrics electricallyisolating bonding contacts 4407. Bonding contacts 4407 can includeconductive materials, such as Cu. The remaining area of bonding layer4406 can be formed with dielectric materials, such as silicon oxide.Bonding contacts 4407 and surrounding dielectrics in bonding layer 4406can be used for hybrid bonding. In some implementations, bondinginterface 4403 is the place at which bonding layers 4406 and 1010 aremet and bonded. In practice, bonding interface 4403 can be a layer witha certain thickness that includes the top surface of bonding layer 1010of second semiconductor structure 104 and the bottom surface of bondinglayer 4406 of fifth semiconductor structure 110.

As shown in FIG. 45A, fifth semiconductor structure 110 can furtherinclude an interconnect layer 4528 above and in contact with bondinglayer 4406 to transfer electrical signals. Interconnect layer 4528 caninclude a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. In some implementations, the interconnects ininterconnect layer 4528 also include local interconnects, such as bitline contacts and word line contacts. Interconnect layer 4528 canfurther include one or more ILD layers in which the lateral lines andvias can form. The interconnects in interconnect layer 4528 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. The ILD layers in interconnectlayer 4528 can include dielectric materials including, but not limitedto, silicon oxide, silicon nitride, silicon oxynitride, low-kdielectrics, or any combination thereof.

As shown in FIG. 45A, fifth semiconductor structure 110 can furtherinclude a memory cell array, such as an array of NAND memory strings 208above and in contact with interconnect layer 4528. In someimplementations, interconnect layer 4528 is vertically between NANDmemory strings 208 and bonding interface 4403. Each NAND memory string208 extends vertically through a plurality of pairs each including aconductive layer and a dielectric layer, according to someimplementations. The stacked and interleaved conductive layers anddielectric layers are also referred to herein as a stack structure,e.g., a memory stack 4527. Memory stack 4527 may be an example of memorystack 804 in FIGS. 8A-8C, and the conductive layer and dielectric layerin memory stack 4527 may be examples of gate conductive layers 806 anddielectric layer 808, respectively, in memory stack 804. The interleavedconductive layers and dielectric layers in memory stack 4527 alternatein the vertical direction, according to some implementations. Eachconductive layer can include a gate electrode (gate line) surrounded byan adhesive layer and a gate dielectric layer. The gate electrode of theconductive layer can extend laterally as a word line, ending at one ormore staircase structures of memory stack 4527.

In some implementations, each NAND memory string 208 is a “charge trap”type of NAND memory string including any suitable channel structuresdisclosed herein, such as bottom plug channel structure 812A, sidewallplug channel structure 812B, or bottom open channel structure 812C,described above in detail with respect to FIGS. 8A-8C. It is understoodthat NAND memory strings 208 are not limited to the “charge trap” typeof NAND memory strings and may be “floating gate” type of NAND memorystrings in other examples.

As shown in FIG. 45A, fifth semiconductor structure 110 can furtherinclude semiconductor layer 4404 disposed above memory stack 4527 and incontact with the sources of NAND memory strings 208 on one side thereof.Semiconductor layer 1002 can include semiconductor materials. Devices,such as NAND memory strings 208 and transistors, can be formed on bothsides of semiconductor layer 4404. The sources of NAND memory strings208 can be in contact with a first side (e.g., toward the negativey-direction in FIG. 45A) of semiconductor layer 4404. In someimplementations, semiconductor layer 1002 is a thinned silicon substratehaving single crystalline silicon on which memory stack 3627 and NANDmemory strings 208 (e.g., including bottom plug channel structure 812Aor sidewall plug channel structure 812B) are formed on the first sidethereof. It is understood that in some examples, trench isolations anddoped regions (not shown) may be formed on one side of semiconductorlayer 4404 as well.

As shown in FIG. 45A, fifth semiconductor structure 110 can also includeanother device layer 4514 above and in contact with a second side (e.g.,toward the positive y-direction in FIG. 45A) of semiconductor layer 4404opposite to the first side. Device layer 4514 and memory stack 4527 andNAND memory strings 208 can thus be disposed in different planes in thevertical direction, i.e., stacked over one another on opposite sides ofsemiconductor layer 4404 in fifth semiconductor structure 110. Further,device layers 4514 and 4502 can also be disposed in different planes inthe vertical direction, i.e., stacked over one another, and separated bysemiconductor layer 4404 and memory stack 4527 and NAND memory strings208 in the vertical direction. In some implementations, device layer4514 includes a first peripheral circuit 4516 and a second peripheralcircuit 4518. First peripheral circuit 4516 can include LLV circuits402, such as I/O circuits (e.g., in interface 316 and data bus 318), andsecond peripheral circuit 4518 can include LV circuits 404, such as pagebuffer circuits (e.g., page buffer circuits 702 in page buffer 304) andlogic circuits (e.g., in control logic 312). In some implementations,first peripheral circuit 4516 includes a plurality of transistors 4520in contact with the second side of semiconductor layer 4404, and secondperipheral circuit 4518 includes a plurality of transistors 4522 incontact with the second side of semiconductor layer 4404. Transistors4520 and 4522 can include any transistors disclosed herein, such asplanar transistors 500 and 3D transistors 600. As described above indetail with respect to transistors 500 and 600, in some implementations,each transistor 4520 or 4522 includes a gate dielectric, and thethickness of the gate dielectric of transistor 4520 (e.g., in LLVcircuit 402) is smaller than the thickness of the gate dielectric oftransistor 4522 (e.g., in LV circuit 404) due to the lower voltageapplied to transistor 4520 than transistor 4522. Trench isolations(e.g., STIs) and doped regions (e.g., wells, sources, and drains oftransistors 4520 and 4522) can be formed on the second side ofsemiconductor layer 3904 as well.

Moreover, the different voltages applied to different transistors 4520,4522, 4508, and 4510 in fifth and second semiconductor structures 110and 104 can lead to differences of device dimensions between fifth andsecond semiconductor structures 110 and 104. In some implementations,the thickness of the gate dielectric of transistor 4508 (e.g., in HVcircuit 406) is larger than the thickness of the gate dielectric oftransistor 4520 (e.g., in LLV circuit 402) due to the higher voltageapplied to transistor 4508 than transistor 4520. In someimplementations, the thickness of the gate dielectric of transistor 4522(e.g., in LV circuit 404) is the same as the thickness of the gatedielectric of transistor 4510 (e.g., in LV circuit 404) due to the samevoltage applied to transistor 4522 and transistor 4510. In someimplementations, the thickness of semiconductor layer 1004 in whichtransistor 4508 (e.g., in HV circuit 406) is formed is larger than thethickness of semiconductor layer 4404 in which transistor 4520 (e.g., inLLV circuit 402) is formed due to the higher voltage applied totransistor 4508 than transistor 4520.

In some implementations, fifth semiconductor structure 110 furtherincludes an interconnect layer 4526 above device layer 4514 to transferelectrical signals to and from peripheral circuits 4516 and 4518. Asshown in FIG. 45A, device layer 4514 (including transistors 4520 and4522 of peripheral circuits 4516 and 4518) can be disposed verticallybetween semiconductor layer 4404 and interconnect layer 4526.Interconnect layer 4526 can include a plurality of interconnects. Theinterconnects in interconnect layer 4012 can be coupled to transistors4520 and 4522 of peripheral circuits 4518 and 4518 in device layer 4514.Interconnect layer 4526 can further include one or more ILD layers inwhich the lateral lines and vias can form. That is, interconnect layer4526 can include lateral lines and vias in multiple ILD layers. In someimplementations, the devices in device layer 4514 are coupled to oneanother through the interconnects in interconnect layer 4526. Forexample, peripheral circuit 4516 may be coupled to peripheral circuit4518 through interconnect layer 4526. The interconnects in interconnectlayer 4526 can include conductive materials including, but not limitedto, W, Co, Cu, Al, silicides, or any combination thereof. The ILD layersin interconnect layer 4526 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof.

In some implementations, the interconnects in interconnect layer 4526include Cu, which has a relatively low resistivity (better electricalperformance) among conductive metal materials. As described below withrespect to the fabrication process, although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), since thefabrication of interconnect layer 4526 can occur after thehigh-temperature processes in forming device layer 4514 and memory stack4527 and NAND memory strings 208 in fifth semiconductor structure 110,as well as being separated from the high-temperature processes informing second semiconductor structure 104, the interconnects ofinterconnect layer 4526 having Cu can become feasible.

As shown in FIG. 45A, fifth semiconductor structure 110 can furtherinclude one or more contacts 4524 extending vertically throughsemiconductor layer 4404. In some implementations, contacts 4524 couplethe interconnects in interconnect layer 4526 and the interconnects ininterconnect layer 4528. Contact 4524 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, silicides, or anycombination thereof. In some implementations, contact 4524 includes avia surrounded by a dielectric spacer (e.g., having silicon oxide) toelectrically separate the via from semiconductor layer 4404. Dependingon the thickness of semiconductor layer 4404, contact 4524 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm).

As shown in FIG. 45A, fifth semiconductor structure 110 can furtherinclude a pad-out interconnect layer 902 above and in contact withinterconnect layer 4526. In some implementations, device layer 4514having transistors 4520 and 4522 is disposed vertically between pad-outinterconnect layer 902 and semiconductor layer 4404. Pad-outinterconnect layer 902 can include interconnects, e.g., contact pads4532, in one or more ILD layers. Pad-out interconnect layer 902 andinterconnect layer 4526 can be formed on the same side of semiconductorlayer 4404. In some implementations, the interconnects in pad-outinterconnect layer 902 can transfer electrical signals between 3D memorydevice 4500 and external devices, e.g., for pad-out purposes.

As a result, peripheral circuits 4516 and 4518 and NAND memory strings208 on different sides of semiconductor layer 4404 in fifthsemiconductor structure 110 can be coupled to peripheral circuits 4504and 4506 in second semiconductor structure 104 through variousinterconnection structures, including interconnect layers 4512, 4526,and 4528, bonding layers 1010 and 4406, and contacts 4524. Moreover,peripheral circuits 4504, 4506, 4516, and 4518 and NAND memory strings208 in 3D memory device 4500 can be further coupled to external devicesthrough pad-out interconnect layer 902.

It is understood that the pad-out of 3D memory devices is not limited tofrom fifth semiconductor structure 110 having transistors 4520 and 4522as shown in FIG. 45A (corresponding to FIG. 44A) and may be from secondsemiconductor structure 104 having transistors 4508 and 4510(corresponding to FIG. 44B) as described above in detail. It is alsounderstood that in some examples, since transistors 4520 and 4522 areformed on semiconductor layer 4404, semiconductor layer 4404 may includesingle crystalline silicon, but not polysilicon, due to the superiorcarrier mobility of single crystalline silicon that is desirable fortransistors' performance. In those examples, the channel structures ofNAND memory string 208, which are in contact with semiconductor layer4404 as well, may include channel structures that are suitable to beformed on single crystalline silicon, but not polysilicon, such asbottom plug channel structure 812A and sidewall plug channel structure812B, described above in detail with respect to FIGS. 8A and 8B.

It is also understood that in some examples, a dielectric layer (e.g.,silicon oxide layer) may be formed in semiconductor layer 4404. Forexample, as shown in FIG. 45B, semiconductor layer 4404 in a 3D memorydevice 4501 may include a dielectric layer 4550 (e.g., a silicon oxidelayer). Dielectric layer 4550 can extend laterally and be disposedvertically between device layer 4514 and memory stack 4527 and NANDmemory strings 208, which can serve as a shielding layer between thecomponents formed on opposite sides of semiconductor layer 4404, forexample, for reducing the impact across semiconductor layer 4404 on thethreshold voltages of transistors 4520 and 4522 caused by memory stack4527 and NAND memory strings 208. As shown in FIG. 45B, semiconductorlayer 4404 may include multiple sublayers 4552 and 4554 on oppositesides of dielectric layer 4550. In some implementations, sublayers 4552and 4554 are two single crystalline silicon sublayers on opposite sidesof dielectric layer 4550 (e.g., semiconductor layer 4404 being an SOIsubstrate). In some implementations, sublayers 4554 and 4552 are asingle crystalline silicon sublayer and a polysilicon sublayer,respectively, on opposite sides of dielectric layer 4550 (e.g., bysequentially depositing a silicon oxide layer and a polysilicon layer ona silicon substrate or by transfer bonding). For example, sublayer 4554may be a single crystalline silicon sublayer, sublayer 4552 may be apolysilicon sublayer, NAND memory strings 208 may be in contact withsublayer 4552, and transistors 4520 and 4522 may be in contact withsublayer 4554.

FIGS. 46A-46G illustrate a fabrication process for forming the 3D memorydevices in FIGS. 44A and 44B, according to some aspects of the presentdisclosure. FIG. 47 illustrates a flowchart of a method 4700 for formingthe 3D memory devices in FIGS. 44A and 44B, according to some aspects ofthe present disclosure. Examples of the 3D memory devices depicted inFIGS. 46A-46G and 47 include 3D memory devices 4500 and 4501 depicted inFIGS. 45A and 45B. FIGS. 46A-46G and 47 will be described together. Itis understood that the operations shown in method 4700 are notexhaustive and that other operations can be performed as well before,after, or between any of the illustrated operations. Further, some ofthe operations may be performed simultaneously, or in a different orderthan shown in FIG. 47 . For example, operation 4702 and 4704 may beperformed in parallel.

Referring to FIG. 47 , method 4700 starts at operation 4702, in which anarray of NAND memory strings is formed on a first substrate. The firstsubstrate can be a silicon substrate having single crystalline silicon.In some implementations, to form the array of NAND memory strings, amemory stack is formed on the first substrate.

As illustrated in FIG. 46A, a stack structure, such as a memory stack4604 including interleaved conductive layers and dielectric layers, isformed on a silicon substrate 4602. To form memory stack 4604, in someimplementations, a dielectric stack (not shown) including interleavedsacrificial layers (not shown) and the dielectric layers is formed onsilicon substrate 4602. In some implementations, each sacrificial layerincludes a layer of silicon nitride, and each dielectric layer includesa layer of silicon oxide. The interleaved sacrificial layers anddielectric layers can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. Memory stack 4604 can then be formed by a gatereplacement process, e.g., replacing the sacrificial layers with theconductive layers using wet/dry etch of the sacrificial layers selectiveto the dielectric layers and filling the resulting recesses with theconductive layers. In some implementations, each conductive layerincludes a metal layer, such as a layer of W. It is understood thatmemory stack 4604 may be formed by alternatingly depositing conductivelayers (e.g., doped polysilicon layers) and dielectric layers (e.g.,silicon oxide layers) without the gate replacement process in someexamples. In some implementations, a pad oxide layer including siliconoxide is formed between memory stack 4604 and silicon substrate 4102.

As illustrated in FIG. 41A, NAND memory strings 4606 are formed abovesilicon substrate 4602, each of which extends vertically through memorystack 4604 to be in contact with silicon substrate 4602. In someimplementations, fabrication processes to form NAND memory string 4606include forming a channel hole through memory stack 4604 (or thedielectric stack) and into silicon substrate 4602 using dry etching/andor wet etching, such as DRIE, followed by subsequently filling thechannel hole with a plurality of layers, such as a memory film (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer, using thin film deposition processes such as ALD,CVD, PVD, or any combination thereof. It is understood that the detailsof fabricating NAND memory strings 4606 may vary depending on the typesof channel structures of NAND memory strings 4606 (e.g., bottom plugchannel structure 812A, sidewall plug channel structure 812B, or bottomopen channel structure 812C in FIGS. 8A-8C) and thus, are not elaboratedfor ease of description.

In some implementations, an interconnect layer is formed above the arrayof NAND memory strings on the first substrate. The interconnect layercan include a first plurality of interconnects in one or more ILDlayers. As illustrated in FIG. 41A, an interconnect layer 4608 is formedabove memory stack 4604 and NAND memory strings 4606. Interconnect layer4608 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with NAND memory strings 4606. Insome implementations, interconnect layer 4608 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layer 4608 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form interconnects can also include photolithography, CMP, wet/dryetch, or any other suitable processes. The ILD layers can includedielectric materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof. The ILD layers and interconnects illustrated inFIG. 46A can be collectively referred to as interconnect layer 4608.

In some implementations, a first bonding layer is formed aboveinterconnect layer. The first bonding layer can include a plurality offirst bonding contacts. As illustrated in FIG. 46A, a bonding layer 4610is formed above interconnect layer 4608. Bonding layer 4610 can includea plurality of bonding contacts surrounded by dielectrics. In someimplementations, a dielectric layer is deposited on the top surface ofinterconnect layer 4608 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 4608by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 4700 proceeds to operation 4704, as illustrated in FIG. 47 , inwhich a first transistor is formed on a first side of a secondsubstrate. The second substrate can be a silicon substrate having singlecrystalline silicon. As illustrated in FIG. 46B, a plurality oftransistors 4614 and 4616 are formed on one side of a silicon substrate4612. Transistors 4614 and 4616 can be formed by a plurality ofprocesses including, but not limited to, photolithography, dry/wet etch,thin film deposition, thermal growth, implantation, CMP, and any othersuitable processes. In some implementations, doped regions are formed insilicon substrate 4612 by ion implantation and/or thermal diffusion,which function, for example, as wells and source/drain regions oftransistors 4614 and 4616. In some implementations, isolation regions(e.g., STIs) are also formed in silicon substrate 4612 by wet/dry etchand thin film deposition. In some implementations, the thickness of gatedielectric of transistor 4614 is different from the thickness of gatedielectric of transistor 4616, for example, by depositing a thickersilicon oxide film in the region of transistor 4614 than the region oftransistor 4616, or by etching back part of the silicon oxide filmdeposited in the region of transistor 4616. It is understood that thedetails of fabricating transistors 4614 and 4616 may vary depending onthe types of the transistors (e.g., planar transistors 500 or 3Dtransistors 600 in FIGS. 5A, 5B, 6A, and 6B) and thus, are notelaborated for ease of description.

In some implementations, an interconnect layer is formed above thetransistor on the second substrate. The interconnect layer can include aplurality of interconnects in one or more ILD layers. As illustrated inFIG. 41B, an interconnect layer 4618 can be formed above transistors4614 and 4616. Interconnect layer 4618 can include interconnects of MEOLand/or BEOL in a plurality of ILD layers to make electrical connectionswith transistors 4614 and 4616. In some implementations, interconnectlayer 4618 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayer 4618 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 46B can be collectively referred to as interconnectlayer 4618.

In some implementations, a second bonding layer is formed aboveinterconnect layer. The second bonding layer can include a plurality ofsecond bonding contacts. As illustrated in FIG. 46B, a bonding layer4620 is formed above interconnect layer 4618. Bonding layer 4620 caninclude a plurality of bonding contacts surrounded by dielectrics. Insome implementations, a dielectric layer is deposited on the top surfaceof interconnect layer 4618 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The bonding contacts can then be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 4618by first patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., Cu). In some implementations, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Method 4700 proceeds to operation 4706, as illustrated in FIG. 47 , inwhich the first substrate and the second substrate are bonded in aface-to-face manner. The first bonding contact in the first bondinglayer can be in contact with the second bonding contact in the secondbonding layer at a bonding interface after bonding the first and secondsubstrates. The bonding can include hybrid bonding.

As illustrated in FIG. 46C, silicon substrate 4602 and components formedthereon (e.g., memory stack 4604 and NAND memory strings 4606) areflipped upside down. Bonding layer 4610 facing down is bonded withbonding layer 4620 facing up, i.e., in a face-to-face manner, therebyforming a bonding interface 4632. That is, silicon substrate 4602 andcomponents formed thereon can be bonded with silicon substrate 4612 andcomponents formed thereon in a face-to-face manner, such that thebonding contacts in bonding layer 4610 are in contact with the bondingcontacts in bonding layer 4620 at bonding interface 4632. In someimplementations, a treatment process, e.g., plasma treatment, wettreatment and/or thermal treatment, is applied to bonding surfaces priorto bonding. Although not shown in FIG. 46C, it is understood that insome examples, silicon substrate 4612 and components formed thereon(e.g., transistors 4614 and 4616) can be flipped upside down, andbonding layer 4620 facing down can be bonded with bonding layer 4610facing up, i.e., in a face-to-face manner, thereby forming bondinginterface 4632 as well.

As a result of the bonding, e.g., hybrid bonding, the bonding contactson opposite sides of bonding interface 4632 can be inter-mixed. Afterthe bonding, the bonding contacts in bonding layer 4610 and the bondingcontacts in bonding layer 4620 are aligned and in contact with oneanother, such that memory stack 4604 and NAND memory strings 4606 formedtherethrough can be coupled to transistors 4614 and 4616 through thebonded bonding contacts across bonding interface 4632, according to someimplementations.

In some implementations, the first substrate is thinned after thebonding from the second side opposite to the first side. As illustratedin FIG. 46D, silicon substrate 4602 (shown in FIG. 46C) is thinned fromanother side opposite to the side on which transistors 4614 and 4616 areformed to become a semiconductor layer 4634 having single crystallinesilicon. Silicon substrate 4602 can be thinned by processes including,but not limited to, wafer grinding, dry etch, wet etch, CMP, any othersuitable processes, or any combination thereof.

Method 4700 proceeds to operation 4708, as illustrated in FIG. 43 , inwhich a second transistor is formed on a second side of the firstsubstrate opposite to the first side. As illustrated in FIG. 46D, aplurality of transistors 4624 and 4626 are formed on the other side ofthinned silicon substrate 4602 (i.e., semiconductor layer 4634) oppositeto the side on which transistors 4614 and 4616 are formed. Transistors4624 and 4626 can be formed by a plurality of processes including, butnot limited to, photolithography, dry/wet etch, thin film deposition,thermal growth, implantation, CMP, and any other suitable processes. Insome implementations, doped regions are formed on the other side ofsemiconductor layer 4634 by ion implantation and/or thermal diffusion,which function, for example, as wells and source/drain regions oftransistors 4624 and 4626. In some implementations, isolation regions(e.g., STIs) are also formed on the other side of semiconductor layer4634 by wet/dry etch and thin film deposition. In some implementations,the thickness of gate dielectric of transistor 4624 is different fromthe thickness of gate dielectric of transistor 4626, for example, bydepositing a thicker silicon oxide film in the region of transistor 4624than the region of transistor 4626, or by etching back part of thesilicon oxide film deposited in the region of transistor 4626. It isunderstood that the details of fabricating transistors 4624 and 4626 mayvary depending on the types of the transistors (e.g., planar transistors500 or 3D transistors 600 in FIGS. 5A, 5B, 6A, and 6B) and thus, are notelaborated for ease of description.

In some implementations, an interconnect layer is formed above thetransistor. The interconnect layer can include a plurality ofinterconnects in one or more ILD layers. As illustrated in FIG. 46D, aninterconnect layer 4642 can be formed above transistors 4624 and 4626.Interconnect layer 4642 can include interconnects of MEOL and/or BEOL ina plurality of ILD layers to make electrical connections withtransistors 4624 and 4626. In some implementations, interconnect layer4642 includes multiple ILD layers and interconnects therein formed inmultiple processes. For example, the interconnects in interconnect layer4642 can include conductive materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD,electroplating, electroless plating, or any combination thereof.Fabrication processes to form interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 46D can be collectively referred to as interconnectlayer 4642.

In some implementations, the interconnects in interconnect layer 4642include Cu, which has a relatively low resistivity among conductivemetal materials. It is understood that although Cu has a relatively lowthermal budget (incompatible with high-temperature processes), using Cuas the conductive materials of the interconnects in interconnect layer4642 may become feasible since there are no more high-temperatureprocesses after the fabrication of interconnect layer 4642.

In some implementations, a contact through the thinned first substrateis formed. As illustrated in FIG. 46D, one or more contacts 4636 eachextending vertically through semiconductor layer 4634 (i.e., the thinnedsilicon substrate 4602) are formed. Contacts 4636 can couple theinterconnects in interconnect layer 4608 and the interconnects ininterconnect layer 4642. Contact 4636 can be formed by first patterningcontact holes through semiconductor layer 4634 using patterning process(e.g., photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., W or Cu). In some implementations, filling the contact holesincludes depositing a spacer (e.g., a silicon oxide layer) beforedepositing the conductor.

Method 4700 proceeds to operation 4710, as illustrated in FIG. 47 , inwhich a pad-out interconnect layer is formed. The pad-out interconnectlayer can be formed above the second transistor. As illustrated in FIG.46E, a pad-out interconnect layer 4646 is formed above interconnectlayer 4642 and transistors 4626 and 4624 on semiconductor layer 4634.Pad-out interconnect layer 4646 can include interconnects, such ascontact pads 4648, formed in one or more ILD layers. Contact pads 4648can include conductive materials including, but not limited to, W, Co,Cu, Al, doped silicon, silicides, or any combination thereof. The ILDlayers can include dielectric materials including, but not limited to,silicon oxide, silicon nitride, silicon oxynitride, low-k dielectrics,or any combination thereof.

It is understood that in some examples, the sequence of operation 4706and 4708 in method 4700 may be switched. In some implementations, afteroperation 4704, method 4700 skips operation 4706 and proceeds tooperation 4708, as illustrated in FIG. 47 , in which a second transistoris formed on a second side of the first substrate opposite to the firstside. After operation 4708, method 4700 returns to operation 4706, asillustrated in FIG. 47 , in which the first substrate and the secondsubstrate are bonded in a face-to-face manner.

In some implementations, to form 3D memory device 4501 in FIG. 45B,after bonding the first and second substrates in a face-to-face mannerat operation 4706, a semiconductor layer including a dielectric layervertically between two semiconductor sublayers is formed to replace thefirst substrate, such that at operation 4708, the second transistor isformed on the semiconductor layer, as opposed to the first substrate. Asillustrated in FIG. 46F, silicon substrate 4602 (shown in FIG. 46C) isreplaced by a semiconductor layer 4660 having a first sublayer 4635, adielectric layer 4637, and a second sublayer 4639. In someimplementations, sublayer 4635 is formed by thinning silicon substrate4602 and thus have the same material as silicon substrate 4602, i.e.,single crystalline silicon. In some implementations, sublayer 4635 isformed by removing silicon substrate 4602 and depositing another layerof semiconductor material, such as polysilicon, in contact with thesources of NAND memory strings 4606. Dielectric layer 4637 can be formedby depositing a layer of dielectric material, such as silicon oxide, onsublayer 4635 or by oxidizing part of sublayer 4635 (e.g., having singlecrystalline silicon). Sublayer 4639 can be formed on dielectric layer4637 using transfer bonding as described above in detail. It isunderstood that in some examples, dielectric layer 4637 and sublayer4639 may be transferred together and bonded onto sublayer 4635 bytransfer bonding. As illustrated in FIG. 46G, transistors 4624 and 4626can be formed on sublayer 4639 of semiconductor layer 4660 using thesimilar processes as described above in detail. Contacts 4636 can beformed to extend vertically through sublayers 4639, dielectric layer4637, and sublayer 4635 of semiconductor layer 4660 to be coupled to theinterconnects of interconnect layer 4608.

FIG. 50 illustrates a block diagram of a system 5000 having a memorydevice, according to some aspects of the present disclosure. System 5000can be a mobile phone, a desktop computer, a laptop computer, a tablet,a vehicle computer, a gaming console, a printer, a positioning device, awearable electronic device, a smart sensor, a virtual reality (VR)device, an argument reality (AR) device, or any other suitableelectronic devices having storage therein. As shown in FIG. 50 , system5000 can include a host 5008 and a memory system 5002 having one or morememory devices 5004 and a memory controller 5006. Host 5008 can be aprocessor of an electronic device, such as a central processing unit(CPU), or a system-on-chip (SoC), such as an application processor (AP).Host 5008 can be configured to send or receive the data to or frommemory devices 5004.

Memory device 5004 can be any memory devices disclosed herein, such as3D memory devices 100, 101, 120, and 121. In some implementations, eachmemory device 5004 includes an array of memory cells, a first peripheralcircuit of the array of memory cells, and a second peripheral circuit ofthe array of memory cells, which are stacked over one another indifferent planes, as described above in detail.

Memory controller 5006 is coupled to memory device 5004 and host 5008and is configured to control memory device 5004, according to someimplementations. Memory controller 5006 can manage the data stored inmemory device 5004 and communicate with host 5008. In someimplementations, memory controller 5006 is designed for operating in alow duty-cycle environment like secure digital (SD) cards, compact Flash(CF) cards, universal serial bus (USB) Flash drives, or other media foruse in electronic devices, such as personal computers, digital cameras,mobile phones, etc. In some implementations, memory controller 5006 isdesigned for operating in a high duty-cycle environment SSDs or embeddedmulti-media-cards (eMMCs) used as data storage for mobile devices, suchas smartphones, tablets, laptop computers, etc., and enterprise storagearrays. Memory controller 5006 can be configured to control operationsof memory device 5004, such as read, erase, and program operations. Insome implementations, memory controller 5006 is configured to controlthe array of memory cells through the first peripheral circuit and thesecond peripheral circuit. Memory controller 5006 can also be configuredto manage various functions with respect to the data stored or to bestored in memory device 5004 including, but not limited to bad-blockmanagement, garbage collection, logical-to-physical address conversion,wear leveling, etc. In some implementations, memory controller 5006 isfurther configured to process error correction codes (ECCs) with respectto the data read from or written to memory device 5004. Any othersuitable functions may be performed by memory controller 5006 as well,for example, formatting memory device 5004. Memory controller 5006 cancommunicate with an external device (e.g., host 5008) according to aparticular communication protocol. For example, memory controller 5006may communicate with the external device through at least one of variousinterface protocols, such as a USB protocol, an MMC protocol, aperipheral component interconnection (PCI) protocol, a PCI-express(PCI-E) protocol, an advanced technology attachment (ATA) protocol, aserial-ATA protocol, a parallel-ATA protocol, a small computer smallinterface (SCSI) protocol, an enhanced small disk interface (ESDI)protocol, an integrated drive electronics (IDE) protocol, a Firewireprotocol, etc.

Memory controller 5006 and one or more memory devices 5004 can beintegrated into various types of storage devices, for example, beincluded in the same package, such as a universal Flash storage (UFS)package or an eMMC package. That is, memory system 5002 can beimplemented and packaged into different types of end electronicproducts. In one example as shown in FIG. 51A, memory controller 5006and a single memory device 5004 may be integrated into a memory card5102. Memory card 5102 can include a PC card (PCMCIA, personal computermemory card international association), a CF card, a smart media (SM)card, a memory stick, a multimedia card (MMC, RS-MMC, MMCmicro), an SDcard (SD, miniSD, microSD, SDHC), a UFS, etc. Memory card 5102 canfurther include a memory card connector 5104 coupling memory card 5102with a host (e.g., host 5008 in FIG. 50 ). In another example as shownin FIG. 51B, memory controller 5006 and multiple memory devices 5004 maybe integrated into an SSD 5106. SSD 5106 can further include an SSDconnector 5108 coupling SSD 5106 with a host (e.g., host 5008 in FIG. 50). In some implementations, the storage capacity and/or the operationspeed of SSD 5106 is greater than those of memory card 5102.

According to one aspect of the present disclosure, a 3D memory deviceincludes a first semiconductor structure, a second semiconductorstructure, and a bonding interface between the first semiconductorstructure and the second semiconductor structure. The firstsemiconductor structure includes an array of memory cells and a firstsemiconductor layer in contact with sources of the array of NAND memorystrings. The second semiconductor structure includes a secondsemiconductor layer, a first peripheral circuit of the array of memorycells including a first transistor in contact with a first side of thesecond semiconductor layer, and a second peripheral circuit of the arrayof NAND memory strings including a second transistor in contact with asecond side of the second semiconductor layer opposite to the firstside.

In some implementations, the first semiconductor layer includes singlecrystalline silicon.

In some implementations, the first semiconductor layer includespolysilicon.

In some implementations, the second semiconductor structure furtherincludes a handle substrate on a side of the second semiconductorstructure away from the first semiconductor structure.

In some implementations, the first peripheral circuit is between thebonding interface and the second semiconductor layer.

In some implementations, the first transistor includes a first gatedielectric, the second transistor includes a second gate dielectric, anda thickness of the first gate dielectric is greater than a thickness ofthe second gate dielectric.

In some implementations, a difference between the thicknesses of thefirst and second gate dielectrics is at least 5-fold.

In some implementations, the second semiconductor structure furtherincludes a third peripheral circuit of the array of memory cells, andthe third peripheral circuit includes a third transistor in contact withthe first side of the second semiconductor layer and including a thirdgate dielectric. In some implementations, the second semiconductorstructure further includes a fourth peripheral circuit of the array ofmemory cells, and the fourth peripheral circuit including a fourthtransistor in contact with the second side of the second semiconductorlayer including a fourth gate dielectric. In some implementations, thethird and fourth gate dielectrics have a same thickness.

In some implementations, the thickness of the third and fourth gatedielectrics is between the thicknesses of the first and second gatedielectrics.

In some implementations, the third and fourth peripheral circuitsinclude at least one of a page buffer circuit or a logic circuit.

In some implementations, the second semiconductor structure furtherincludes a first interconnect layer including a first interconnectcoupled to the first transistor and between the bonding interface andthe first peripheral circuit. In some implementations, the secondsemiconductor structure further includes a second interconnect layerincluding a second interconnect coupled to the second transistor suchthat the second peripheral circuit is between the second semiconductorlayer and the second interconnect layer.

In some implementations, the second interconnect includes copper, andthe first interconnect includes tungsten.

In some implementations, the second semiconductor structure furtherincludes a contact through the second semiconductor layer.

In some implementations, the second semiconductor structure furtherincludes a pad-out interconnect layer such that the second peripheralcircuit is between the pad-out interconnect layer and the secondsemiconductor layer.

In some implementations, the first semiconductor structure furtherincludes a pad-out interconnect layer in contact with the firstsemiconductor layer.

In some implementations, the second peripheral circuit includes an I/Ocircuit, and the first peripheral circuit includes a driving circuit.

In some implementations, the 3D memory device further includes a firstvoltage source coupled to the first peripheral circuit and configured toprovide a first voltage to the first peripheral circuit, and a secondvoltage source coupled to the second peripheral circuit and configuredto provide a second voltage to the second peripheral circuit. In someimplementations, the first voltage is greater than the second voltage.

In some implementations, the first semiconductor structure furtherincludes a first bonding layer at the bonding interface and including afirst bonding contact, the second semiconductor structure furtherincludes a second bonding layer at the bonding interface and including asecond bonding contact, and the first bonding contact is in contact withthe second bonding contact at the bonding interface.

In some implementations, the array of NAND memory strings is between thebonding interface and the first semiconductor layer.

According to another aspect of the present disclosure, a system includesa memory device configured to store data. The memory device includes afirst semiconductor structure, a second semiconductor structure, and abonding interface between the first semiconductor structure and thesecond semiconductor structure. The first semiconductor structureincludes an array of memory cells and a first semiconductor layer incontact with sources of the array of NAND memory strings. The secondsemiconductor structure includes a second semiconductor layer, a firstperipheral circuit of the array of memory cells including a firsttransistor in contact with a first side of the second semiconductorlayer, and a second peripheral circuit of the array of NAND memorystrings including a second transistor in contact with a second side ofthe second semiconductor layer opposite to the first side. The systemalso includes a memory controller coupled to the memory device andconfigured to control the array of memory cells through the firstperipheral circuit and the second peripheral circuit.

According to still another aspect of the present disclosure, a methodfor forming a 3D memory device is disclosed. An array of NAND memorystrings is formed on a first substrate. A first transistor is formed ona first side of a second substrate. The first substrate and secondsubstrate are bonded. A second transistor is formed on a second side ofthe second substrate opposite to the first side.

In some implementations, the array of NAND memory strings is coupled tothe first transistor after bonding the first and second substrates.

In some implementations, a pad-out interconnect layer is formed abovethe second transistor after bonding the first and second substrates.

In some implementations, the first substrate is thinned after bondingthe first and second substrates, and a pad-out interconnect layer isformed above the array of NAND memory strings.

In some implementations, bonding the first and second substratesincludes hybrid bonding.

In some implementations, a first bonding layer is formed above the arrayof NAND memory strings on the first substrate, and the first bondinglayer includes a first bonding contact. In some implementations, asecond bonding layer is formed above the first transistor on the secondsubstrate, and the second bonding layer includes a second bondingcontact. The first bonding contact is in contact with the second bondingcontact at a bonding interface after bonding the first and secondsubstrates.

In some implementations, the second substrate is thinned before formingthe second transistor, and a contact is formed through the thinnedsecond substrate.

In some implementations, to form the first transistor, a first gatedielectric is formed, to form the second transistor, a second gatedielectric is formed, and a thickness of the first gate dielectric isgreater than a thickness of the second gate dielectric.

In some implementations, to form the second transistor, the secondtransistor is formed on the second side of the second substrate afterbonding the first and second substrates.

In some implementations, to form the second transistor, the secondtransistor is formed on the second side of the second substrate prior tobonding the first and second substrates.

The foregoing description of the specific implementations can be readilymodified and/or adapted for various applications. Therefore, suchadaptations and modifications are intended to be within the meaning andrange of equivalents of the disclosed implementations, based on theteaching and guidance presented herein.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary implementations, but should bedefined only in accordance with the following claims and theirequivalents.

What is claimed is:
 1. A three-dimensional (3D) memory device,comprising: a first semiconductor structure comprising: an array of NANDmemory strings; and a first semiconductor layer in contact with sourcesof the array of NAND memory strings; a second semiconductor structurecomprising: a second semiconductor layer; a first peripheral circuit ofthe array of NAND memory strings, the first peripheral circuitcomprising a first transistor in contact with a first side of the secondsemiconductor layer; and a second peripheral circuit of the array ofNAND memory strings, the second peripheral circuit comprising a secondtransistor in contact with a second side of the second semiconductorlayer opposite to the first side; and a bonding interface between thefirst semiconductor structure and the second semiconductor structure. 2.The 3D memory device of claim 1, wherein the first semiconductor layercomprises single crystalline silicon.
 3. The 3D memory device of claim1, wherein the first semiconductor layer comprises polysilicon.
 4. The3D memory device of claim 1, wherein the first peripheral circuit isbetween the bonding interface and the second semiconductor layer.
 5. The3D memory device of claim 4, wherein the first transistor comprises afirst gate dielectric; the second transistor comprises a second gatedielectric; and a thickness of the first gate dielectric is greater thana thickness of the second gate dielectric.
 6. The 3D memory device ofclaim 5, wherein a difference between the thicknesses of the first andsecond gate dielectrics is at least 5-fold.
 7. The 3D memory device ofclaim 5, wherein the second semiconductor structure further comprises: athird peripheral circuit of the array of NAND memory strings, the thirdperipheral circuit comprising a third transistor in contact with thefirst side of the second semiconductor layer, the third transistorcomprising a third gate dielectric; and a fourth peripheral circuit ofthe array of NAND memory strings, the fourth peripheral circuitcomprising a fourth transistor in contact with the second side of thesecond semiconductor layer, the fourth transistor comprising a fourthgate dielectric; and the third and fourth gate dielectrics have a samethickness.
 8. The 3D memory device of claim 7, wherein the thickness ofthe third and fourth gate dielectrics is between the thicknesses of thefirst and second gate dielectrics.
 9. The 3D memory device of claim 7,wherein the third and fourth peripheral circuits comprise at least oneof a page buffer circuit or a logic circuit.
 10. The 3D memory device ofclaim 1, wherein the second semiconductor structure further comprises: afirst interconnect layer between the bonding interface and the firstperipheral circuit, the first interconnect layer comprising a firstinterconnect coupled to the first transistor; and a second interconnectlayer such that the second peripheral circuit is between the secondsemiconductor layer and the second interconnect layer, the secondinterconnect layer comprising a second interconnect coupled to thesecond transistor.
 11. The 3D memory device of claim 10, wherein thesecond interconnect comprises copper, and the first interconnectcomprises tungsten.
 12. The 3D memory device of claim 1, wherein thesecond semiconductor structure further comprises a contact through thesecond semiconductor layer.
 13. The 3D memory device of claim 1, whereinthe second semiconductor structure further comprises a pad-outinterconnect layer such that the second peripheral circuit is betweenthe pad-out interconnect layer and the second semiconductor layer. 14.The 3D memory device of claim 1, wherein the first semiconductorstructure further comprises a pad-out interconnect layer in contact withthe first semiconductor layer.
 15. The 3D memory device of claim 1,wherein the second peripheral circuit comprises an input/output (I/O)circuit, and the first peripheral circuit comprises a driving circuit.16. The 3D memory device of claim 1, further comprising: a first voltagesource coupled to the first peripheral circuit and configured to providea first voltage to the first peripheral circuit; and a second voltagesource coupled to the second peripheral circuit and configured toprovide a second voltage to the second peripheral circuit, wherein thefirst voltage is greater than the second voltage.
 17. The 3D memorydevice of claim 1, wherein the first semiconductor structure furthercomprises a first bonding layer at the bonding interface and comprisinga first bonding contact; the second semiconductor structure furthercomprises a second bonding layer at the bonding interface and comprisinga second bonding contact; and the first bonding contact is in contactwith the second bonding contact at the bonding interface.
 18. The 3Dmemory device of claim 1, wherein the array of NAND memory strings isbetween the bonding interface and the first semiconductor layer.
 19. Asystem, comprising: a memory device configured to store data, andcomprising: a first semiconductor structure comprising: an array of NANDmemory strings; and a first semiconductor layer in contact with sourcesof the array of NAND memory strings; a second semiconductor structurecomprising: a second semiconductor layer; a first peripheral circuit ofthe array of NAND memory strings, the first peripheral circuitcomprising a first transistor in contact with a first side of the secondsemiconductor layer; and a second peripheral circuit of the array ofNAND memory strings, the second peripheral circuit comprising a secondtransistor in contact with a second side of the second semiconductorlayer opposite to the first side; and a bonding interface between thefirst semiconductor structure and the second semiconductor structure;and a memory controller coupled to the memory device and configured tocontrol the array of NAND memory strings through the first peripheralcircuit and the second peripheral circuit.
 20. A method for forming athree-dimensional (3D) memory device, comprising: forming an array ofNAND memory strings on a first substrate; forming a first transistor ona first side of a second substrate; bonding the first substrate andsecond substrate; and forming a second transistor on a second side ofthe second substrate opposite to the first side.